H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2006
11/30/2006	DE10352404B4 Matrixsubstrat für eine Flüssigkristallanzeigevorrichtung und Verfahren zu dessen Herstellung Matrix substrate for a liquid crystal display device and process for its preparation
11/30/2006	DE102005023460A1 MOSFET e.g. lightly doped drain-MOSFET, operating method for e.g. memory circuit, involves applying breakdown voltage between gate electrode and channel area for penetrating gate dielectric material
11/30/2006	DE102004045773B4 Halbleiterbauelement mit dielektrischer Schichtfolge und Herstellungsverfahren A semiconductor device comprising a dielectric layer sequence and production method
11/30/2006	DE10153110B4 Speicherzelle Memory cell
11/30/2006	DE10060828B4 Halbleiterbauelement in Drain-up-Konfiguration A semiconductor device in drain-up configuration
11/30/2006	DE10005772B4 Trench-MOSFET Trench MOSFET
11/30/2006	CA2609602A1 Semiconductor device comprising a superlattice dielectric interface layer
11/30/2006	CA2609585A1 Semiconductor device including a superlattice having at least one group of substantially undoped layer
11/30/2006	CA2609537A1 Method for preparing nanocrystalline silicon in sio2 and freestanding silicon nanoparticles
11/30/2006	CA2570558A1 High electron mobility transistor, field-effect transistor, epitaxial substrate, method of manufacturing epitaxial substrate, and method of manufacturing group iii nitride transistor
11/29/2006	EP1727220A2 Conductive structure based on poly-3,4-alkenedioxythiophene (PEDOT) and polystyrenesulfonic acid (PSS)
11/29/2006	EP1727209A2 Schottky barrier diode and method of producing the same
11/29/2006	EP1727208A1 Integrated circuit and method of manufacturing of this integrated circuit
11/29/2006	EP1726188A1 Highly efficient organic light-emitting device using substrate or electrode having nanosized half-spherical convex and method for preparing
11/29/2006	EP1726044A1 Trench field effect transistor and method of making it
11/29/2006	EP1726043A2 Self-aligned silicon carbide semiconductor devices and methods of making the same
11/29/2006	EP1725495A1 Flip chip bonded micro-electro-mechanical system (mems) device
11/29/2006	EP1725344A2 System, method and apparatus for self-cleaning dry etch
11/29/2006	EP1065730B1 Compression contacted semiconductor device
11/29/2006	CN2842739Y High-pressure metal-oxide semiconductor element
11/29/2006	CN2842736Y Metal-oxide semiconductor field-effect transistor with isolation structure
11/29/2006	CN1871878A Electrode device for organic device, electronic device having electrode device for organic device, and method of forming electrode device for organic device
11/29/2006	CN1871712A Bifet including a fet having increased linearity and manufacturability
11/29/2006	CN1871711A Display device, method for manufacturing same, and television receiver
11/29/2006	CN1871710A Power surface mount light emitting die package
11/29/2006	CN1871707A 肖特基势垒集成电路 Schottky barrier IC
11/29/2006	CN1871705A Semiconductor apparatus
11/29/2006	CN1871699A Method for manufacturing compound semiconductor substrate
11/29/2006	CN1871690A Method of manufacturing semiconductor device
11/29/2006	CN1871378A Deposition method for nanostructure materials
11/29/2006	CN1870316A Organic thin film transistor (OTFT), its method of fabrication, and flat panel display including OTFT
11/29/2006	CN1870301A 氮化镓半导体器件 GaN semiconductor devices
11/29/2006	CN1870300A Junction field effect transistor and method for manufacturing same
11/29/2006	CN1870299A Non-volatility floating gate memory based on nano-heterogeneous structure
11/29/2006	CN1870298A Preparation method of NROM flash control grid and flash unit
11/29/2006	CN1870297A Flash storage cell structure and its preparation method
11/29/2006	CN1870296A Thin film transistor and liquid crystal display device using the same
11/29/2006	CN1870295A Semiconductor device and its manufacturing method
11/29/2006	CN1870294A Semiconductor structure and method of forming same
11/29/2006	CN1870293A Semiconductor device and method for fabricating the same
11/29/2006	CN1870292A Heterojunction semiconductor device and method for manufacturing same
11/29/2006	CN1870291A Hetero-junction bipolar transistor and manufacturing method of the same
11/29/2006	CN1870290A Transistor structure and electronics device
11/29/2006	CN1870289A Material laminate
11/29/2006	CN1870276A Semiconductor device and manufacturing method of the same
11/29/2006	CN1870271A Semiconductor device having cell transistor with recess channel structure and method of manufacturing the same
11/29/2006	CN1870268A Semiconductor integrated circuit device and electronic card using it
11/29/2006	CN1870267A Semiconductor device and manufacturing of the same
11/29/2006	CN1870266A Semiconductor integrated circuit device and electronic card using it
11/29/2006	CN1870265A Semiconductor integrated circuit device and electronic card using it
11/29/2006	CN1870250A Method of forming film pattern, active matrix substrate, electro-optic device, and electronic apparatus
11/29/2006	CN1870249A Charge-trapping memory device and method for production
11/29/2006	CN1870245A Method of forming dual gate variable VT device
11/29/2006	CN1870235A Organic tft, method of manufacturing the same and flat panel display device having the same
11/29/2006	CN1870232A Manufacturing process of semiconductor device and semiconductor device
11/29/2006	CN1870224A Metal alloy system suitable for ohmic contacting of high speed gallium-arsenide base device
11/29/2006	CN1870221A Method for forming group-III nitride semiconductor layer and semiconductor device
11/29/2006	CN1869810A Method of correcting defect of graytone mask
11/29/2006	CN1869798A Liquid crystal display and method of manufacturing of a tft array panel of the same
11/29/2006	CN1869796A 液晶显示装置 The liquid crystal display device
11/29/2006	CN1869793A Method for forming thin film transistor in liquid crystal display
11/29/2006	CN1869772A 液晶显示器件 Liquid crystal display device
11/29/2006	CN1287470C 半导体器件 Semiconductor devices
11/29/2006	CN1287469C Transistor and its maufacturing method, electro-optic device, semiconductor device and electronic equipment
11/29/2006	CN1287468C Thin film transistor and method for producing thin film transistor
11/29/2006	CN1287467C Double-grid high-voltage P-type MOS transistor
11/29/2006	CN1287466C Charge transfer component
11/29/2006	CN1287465C Semiconductor device and its producing method
11/29/2006	CN1287459C Memory device utilizing carbon nanotubes and method of fabricating the memory device
11/29/2006	CN1287456C Semiconductor device and its manufacturing method
11/29/2006	CN1287455C Semiconductor integrated circuit device and electronic card using same
11/29/2006	CN1287433C Tri-gate devices and method of fabrication
11/29/2006	CN1287429C Method for manufacturing semiconductor device
11/29/2006	CN1287425C Capping layer for improved silicide formation in narrow semiconductor structures
11/29/2006	CN1287397C Granular queueing body, its manufacturing method and device using such queueing body
11/29/2006	CN1287340C Flat panel display
11/29/2006	CN1287214C Electrooptical device and electronic appliance
11/29/2006	CN1287213C Electrooptical device
11/29/2006	CN1287212C Photoelectric device and its driving device, driving method and electronic apparatus
11/29/2006	CN1287211C Inner switching mode liquid crystal display device and producing method thereof
11/29/2006	CN1287210C Manufacturing method for reflective liquid-crystal displaying device and peripheral circuit manufacturing method
11/29/2006	CN1287209C Liquid crystal display device
11/29/2006	CN1287195C Circuit and method for generating top rack wave of panel display
11/29/2006	CN1287194C Array substrate for LCD device and mfg method thereof
11/29/2006	CN1287134C Semiconductor pressure sensor with diaphragm
11/29/2006	CN1286666C Methods of fabricating patterned layers on a substrate
11/28/2006	US7142781 Self-luminous device and electric machine using the same
11/28/2006	US7142458 Nonvolatile semiconductor memory device and control method thereof
11/28/2006	US7142457 Non-volatile semiconductor memory device
11/28/2006	US7142451 Nonvolatile semiconductor memory apparatus and method of producing the same
11/28/2006	US7142351 Electro-magnetophoresis display
11/28/2006	US7142297 Method for simulating the movement of particles
11/28/2006	US7142274 Liquid crystal display device and method of fabricating the same
11/28/2006	US7142273 Liquid crystal display panel with a laminating structure containing a semiconductor layer located under the seal
11/28/2006	US7142261 Liquid crystal display having compensation capacitor
11/28/2006	US7142201 Display device and method of manufacturing the same
11/28/2006	US7141934 Element substrate and light emitting device
11/28/2006	US7141923 Field emission display in which a field emission device is applied to a flat display
11/28/2006	US7141884 Module with a built-in semiconductor and method for producing the same
11/28/2006	US7141882 Semiconductor wafer device having separated conductive patterns in peripheral area and its manufacture method

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