Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2006
11/15/2006CN1864269A SOI-LDMOS device
11/15/2006CN1864268A Heterjunction bipolar transistor with tunnelling mis emitter junction
11/15/2006CN1864267A Biopolar transistor with a low saturation voltage
11/15/2006CN1864266A Spher-supported thin film phosphor electroluminescent devices
11/15/2006CN1864262A Electronically programmable antifuse and circuits made therewith
11/15/2006CN1864253A 非易失性存储装置 Nonvolatile memory device
11/15/2006CN1864115A Power system inhibit method and device and structure therefor
11/15/2006CN1863954A System and process for producing nanowire composites and electronic substrates therefrom
11/15/2006CN1863689A Hydraulically operated automobile
11/15/2006CN1862838A Vertical diode, matrix position sensitive apparatus and manufacturing method of the same
11/15/2006CN1862837A Memory cells and memory arrays
11/15/2006CN1862836A Flash-speicherbauelement und verfahren zur herstellung desselben
11/15/2006CN1862835A Thin film transistor (tft) and flat panel display including the tft
11/15/2006CN1862834A Zinc oxide based film transistor and chip preparing process
11/15/2006CN1862833A 半导体器件 Semiconductor devices
11/15/2006CN1862832A High-voltage semiconductor device and method of manufacturing the same
11/15/2006CN1862831A Transistor including metal-insulator transition material and method of manufacturing the same
11/15/2006CN1862830A Power semiconductor device with L shaped source
11/15/2006CN1862829A Power semiconductor device with buried grid bus and mfg. method thereof
11/15/2006CN1862828A Transistor structure with breakdown protection
11/15/2006CN1862827A High-dielectric coefficient grid dielectric material titanium aluminate film and preparing method thereof
11/15/2006CN1862826A Dispositif a semiconducteur a separation dielectrique et procede de fabrication
11/15/2006CN1862822A Embedded silicon germanium using a double buried oxide silicon-on-insulator wafer
11/15/2006CN1862821A Semiconductor device and method for manufacturing the same
11/15/2006CN1862789A Multi-layered thin films, thin film transistor array panel including the same, and method of manufacturing the panel
11/15/2006CN1862773A Semiconductor device manufacturing method
11/15/2006CN1862772A Verfahren zur bildung einer gate-oxidschicht f¿˜r eine hochspannungsregion eines flash-speicherbauelements
11/15/2006CN1862764A Trench capacitors with buried isolation layer and methods for manufacturing the same
11/15/2006CN1285127C Film semiconductor device and method for manufacturing said device
11/15/2006CN1285121C Method for manufacturing flash memory device
11/15/2006CN1285117C Method for manufacturing flash memory device
11/15/2006CN1285101C Method for producing relaxed SiGe Substrate
11/14/2006USRE39393 Device for reading an image having a common semiconductor layer
11/14/2006US7136797 Method of and apparatus for automatically correcting device model, and computer product
11/14/2006US7136306 Single bit nonvolatile memory cell and methods for programming and erasing thereof
11/14/2006US7136302 Integrated circuit memory device and method
11/14/2006US7136301 Semiconductor memory device and driving method thereof
11/14/2006US7136268 Tunable ESD trigger and power clamp circuit
11/14/2006US7136212 Molecular architecture for molecular electro-optical transistor and switch
11/14/2006US7136130 Liquid crystal display device
11/14/2006US7136127 Method of manufacturing device, device, and electronic apparatus
11/14/2006US7136120 Liquid crystal display device and method of fabricating the same
11/14/2006US7136117 Electro-optical device and electronic apparatus
11/14/2006US7136116 Liquid crystal display with control electrodes for preventing lateral leak of electric field
11/14/2006US7135780 Semiconductor substrate for build-up packages
11/14/2006US7135774 Heat resistant ohmic electrode and method of manufacturing the same
11/14/2006US7135773 Integrated circuit chip utilizing carbon nanotube composite interconnection vias
11/14/2006US7135772 Nitride semiconductor laser
11/14/2006US7135771 Self alignment features for an electronic assembly
11/14/2006US7135767 Integrated circuit substrate material and method
11/14/2006US7135757 Bipolar transistor
11/14/2006US7135756 Array of cells including a selection bipolar transistor and fabrication method thereof
11/14/2006US7135755 Integrated semiconductor device providing for preventing the action of parasitic transistors
11/14/2006US7135753 Structure and method for III-nitride monolithic power IC
11/14/2006US7135752 Dielectric isolation type semiconductor device and method for manufacturing the same
11/14/2006US7135751 High breakdown voltage junction terminating structure
11/14/2006US7135749 Pressure sensor
11/14/2006US7135748 Integrated circuit with multi-length output transistor segment
11/14/2006US7135747 Semiconductor devices having thermal spacers
11/14/2006US7135746 SRAM cells having landing pad in contact with upper and lower cell gate patterns and methods of forming the same
11/14/2006US7135745 Fin thyristor-based semiconductor device
11/14/2006US7135744 Semiconductor device having self-aligned contact hole and method of fabricating the same
11/14/2006US7135743 Electrostatic discharge protection device with complementary dual drain implant
11/14/2006US7135742 Insulated gate type semiconductor device and method for fabricating same
11/14/2006US7135741 Method of manufacturing a semiconductor device
11/14/2006US7135740 High voltage FET switch with conductivity modulation
11/14/2006US7135739 Vertical-type metal insulator semiconductor field effect transistor device, and production method for manufacturing such transistor device
11/14/2006US7135738 Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology
11/14/2006US7135737 Non-volatile flash memory device
11/14/2006US7135736 Semiconductor device
11/14/2006US7135735 Semiconductor device
11/14/2006US7135734 Graded composition metal oxide tunnel barrier interpoly insulators
11/14/2006US7135733 Capacitor for integration with copper damascene processes and a method of manufacture therefore
11/14/2006US7135732 Semiconductor device
11/14/2006US7135731 Vertical DRAM and fabrication method thereof
11/14/2006US7135730 Bias-independent capacitor based on superposition of nonlinear capacitors for analog/RF circuit applications
11/14/2006US7135729 Semiconductor memory device including multi-layer gate structure
11/14/2006US7135728 Large-area nanoenabled macroelectronic substrates and uses therefor
11/14/2006US7135726 Semiconductor memory and its production process
11/14/2006US7135724 Structure and method for making strained channel field effect transistor using sacrificial spacer
11/14/2006US7135723 Integrated circuit with a test circuit
11/14/2006US7135721 Heterojunction bipolar transistor having reduced driving voltage requirements
11/14/2006US7135720 Gallium nitride material transistors and methods associated with the same
11/14/2006US7135718 Diode device and transistor device
11/14/2006US7135717 Semiconductor switches and switching circuits for microwave
11/14/2006US7135716 Gallium nitride-based semiconductor light-emitting device
11/14/2006US7135715 Co-doping for fermi level control in semi-insulating Group III nitrides
11/14/2006US7135714 Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element
11/14/2006US7135712 Electroluminescent device
11/14/2006US7135711 Electroluminescent body
11/14/2006US7135710 Semiconductor light-emitting device
11/14/2006US7135707 Semiconductor device having insulated gate electrode
11/14/2006US7135706 Image sensor and method of manufacturing the same
11/14/2006US7135705 High aperture LCD with insulating color filters overlapping bus lines on active substrate
11/14/2006US7135702 Organic semiconductor structure, manufacturing method of the same, and organic semiconductor device
11/14/2006US7135701 Adiabatic quantum computation with superconducting qubits
11/14/2006US7135699 Method and apparatus for growth of single-crystal rare-earth oxides, nitrides, and phosphides
11/14/2006US7135698 Multi-spectral infrared super-pixel photodetector and imager
11/14/2006US7135697 Spin readout and initialization in semiconductor quantum dots
11/14/2006US7135421 Atomic layer-deposited hafnium aluminum oxide