| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 11/09/2006 | US20060249776 Memory cell, device, system and method for forming same |
| 11/09/2006 | US20060249775 Semiconductor device with contact and method of fabricating the same |
| 11/09/2006 | US20060249774 Capacitor with flexible bus |
| 11/09/2006 | US20060249773 Semiconductor device having high dielectric constant material film and fabrication method for the same |
| 11/09/2006 | US20060249772 Memory circuitry |
| 11/09/2006 | US20060249771 Non-volatile semiconductor memory and method of manufacturing the same |
| 11/09/2006 | US20060249769 Semiconductor memory device and method for fabricating a semiconductor memory device |
| 11/09/2006 | US20060249768 Semiconductor device and method of manufacturing the same |
| 11/09/2006 | US20060249761 Semiconductor material for electronic device and semiconductor element using same |
| 11/09/2006 | US20060249760 High-voltage transistor of semiconductor device and method of forming the same |
| 11/09/2006 | US20060249759 Buried guard ring and radiation hardened isolation structures and fabrication methods |
| 11/09/2006 | US20060249758 Electric multilayer component |
| 11/09/2006 | US20060249756 Method of manufacturing semiconductor device having trench isolation |
| 11/09/2006 | US20060249750 Gallium nitride material devices including an electrode-defining layer and methods of forming the same |
| 11/09/2006 | US20060249748 Gallium nitride material structures including substrates and methods associated with the same |
| 11/09/2006 | US20060249747 High-sensitivity, high-resolution detector devices and arrays |
| 11/09/2006 | US20060249735 TFT mask ROM and method for making same |
| 11/09/2006 | US20060249734 Image display device and method of manufacturing the same |
| 11/09/2006 | US20060249733 Semiconductor device and method for fabricating the same |
| 11/09/2006 | US20060249732 Manufacturing method of display apparatus |
| 11/09/2006 | US20060249731 Method and apparatus for dark current and blooming suppression in 4T CMOS imager pixel |
| 11/09/2006 | US20060249730 Semiconductor device and its manufacturing method |
| 11/09/2006 | US20060249728 Switching device using superlattice without any dielectric barriers |
| 11/09/2006 | US20060249726 Semiconductor devices including nano tubes and methods of operating and fabricating the same |
| 11/09/2006 | US20060249724 Method and structure for Peltier-controlled phase change memory |
| 11/09/2006 | DE4407248B4 EEPROM-Flash-Speicherzelle und Verfahren zum Bilden einer EEPROM-Flash-Speicherzelle EEPROM flash memory cell and method for forming an EEPROM flash memory cell |
| 11/09/2006 | DE112004002611T5 Amorpher Ätzstopp zum anisotropen Ätzen von Substraten Amorphous etch stop for the anisotropic etching of substrates |
| 11/09/2006 | DE102005023668B3 Semiconductor component e.g. metal oxide semiconductor field effect transistor (MOSFET) has middle region surrounded by boundary region whose straight line section has smaller breakdown voltage than curved edge section |
| 11/09/2006 | DE10129289B4 Halbleitervorrichtung mit einer Diode für eine Eingangsschutzschaltung einer MOS-Vorrichtung und Verfahren zu deren Herstellung A semiconductor device comprising a diode for input protection circuit of a MOS device and process for their preparation |
| 11/09/2006 | CA2572792A1 Group iii nitride semiconductor device and epitaxial substrate |
| 11/08/2006 | EP1720201A1 Semiconductor device |
| 11/08/2006 | EP1719823A1 Ion implantation system and ion implantation system |
| 11/08/2006 | EP1719749A1 Polyacene compound and organic semiconductor thin film |
| 11/08/2006 | EP1719219A2 Strain compensating structure to reduce oxide-induced defects in semiconductor devices |
| 11/08/2006 | EP1719187A1 Low capacitance esd-protection structure under a bond pad |
| 11/08/2006 | EP1719186A2 Semiconductor device having thermal spacers |
| 11/08/2006 | EP1719185A1 Multi-state memory cell with asymmetric charge trapping |
| 11/08/2006 | EP1719184A2 High voltage pmos transistor |
| 11/08/2006 | EP1719183A2 Ldmos transistor and method of making the same |
| 11/08/2006 | EP1719182A2 Composite quantum dot structures |
| 11/08/2006 | EP1719181A1 Gradient deposition of low-k cvd materials |
| 11/08/2006 | EP1719174A2 Protective diode for protecting semiconductor switching circuits from electrostatic discharges |
| 11/08/2006 | EP1719171A1 Semiconductor structure |
| 11/08/2006 | EP1719169A1 Manufacturing method of semiconductor device, and ic card, ic tag, rfid, transponder, bill, securities, passport, electronic apparatus, bag, and garment |
| 11/08/2006 | EP1719165A1 Semiconductor device |
| 11/08/2006 | EP1719164A1 Semiconductor device and method of manufacturing a semiconductor device |
| 11/08/2006 | EP1719163A1 Replacement gate flow facilitating high yield and incorporation of etch stop layers and/or stressed films |
| 11/08/2006 | EP1719162A2 Method of making a semiconductor device using treated photoresist |
| 11/08/2006 | EP1719155A2 Semiconductor device and method using nanotube contacts |
| 11/08/2006 | EP1718562A2 Novel nanostructures and method for selective preparation |
| 11/08/2006 | EP1464077B1 Method for producing a capacitor |
| 11/08/2006 | EP1264350B1 Vertical high-voltage semiconductor component |
| 11/08/2006 | EP1025593A4 Semiconductor with tunnel hole contact sources |
| 11/08/2006 | CN2836242Y Integrated high-voltage VDMOS transistor structure |
| 11/08/2006 | CN2836241Y Integrated high-voltage P-type LDMOS transistor structure |
| 11/08/2006 | CN1860615A A hybrid bypolar-MOS trench gate semiconductor device |
| 11/08/2006 | CN1860614A Lateral thin-film soi device having a field plate with isolated metallic regions |
| 11/08/2006 | CN1860602A High performance strained cmos devices |
| 11/08/2006 | CN1860590A Method of room temperature covalent bonding |
| 11/08/2006 | CN1858915A Thin film transistor and its forming method |
| 11/08/2006 | CN1858914A Cmos-bildsensoren und verfahren zum herstellen derselben |
| 11/08/2006 | CN1858913A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 11/08/2006 | CN1858912A Image sensors for reducing flicker and methods of manufacturing the same |
| 11/08/2006 | CN1858639A Liquid crystal display device and method for fabricating the same |
| 11/08/2006 | CN1284300C Probabilistic calculation element, drive method thereof, and recognition device using the same |
| 11/08/2006 | CN1284247C Liquid crystal display device and manufacturing method thereof |
| 11/08/2006 | CN1284246C High withstand voltage field effect type semiconductor device |
| 11/08/2006 | CN1284245C CMOS transistor inverter with multiple grid transistor |
| 11/08/2006 | CN1284241C Active matrix display device |
| 11/08/2006 | CN1284229C Method for manufacturing semiconductor device |
| 11/08/2006 | CN1284217C Method for making semiconductor device |
| 11/08/2006 | CN1284216C EFT structure with elongation strain channel layer and mfg. method thereof |
| 11/08/2006 | CN1284214C Method for enhanced oxidation of MOS transistor gate corners |
| 11/08/2006 | CN1284208C Semiconductor device and producing method thereof |
| 11/08/2006 | CN1284043C Defect correcting method of gray mask |
| 11/08/2006 | CN1284037C Array panel of liquid crystal display device and its manufacture method |
| 11/08/2006 | CN1284036C Array base plate of liquid crystal display device and its manufacturing method |
| 11/07/2006 | US7133316 Program/erase method for P-channel charge trapping memory device |
| 11/07/2006 | US7133315 Write once read only memory employing charge trapping in insulators |
| 11/07/2006 | US7133314 Non-volatile semiconductor memory device with reduced chip real estate area for transfer transistors |
| 11/07/2006 | US7133313 Operation scheme with charge balancing for charge trapping non-volatile memory |
| 11/07/2006 | US7133113 Method of manufacturing a LCD using a photoresist with varying thickness |
| 11/07/2006 | US7133105 Array substrate for liquid crystal display device and method of fabricating the same |
| 11/07/2006 | US7133101 Liquid crystal display |
| 11/07/2006 | US7133100 Method for treating surface of organic insulating film using helium plasma and method of fabricating thin film transistor substrate using the same |
| 11/07/2006 | US7133093 Liquid crystal display device having particular number of the light emitting elements in the backlight for the color display |
| 11/07/2006 | US7133087 Array substrate of liquid crystal display and fabricating method thereof |
| 11/07/2006 | US7133086 Image display and manufacturing method of the same including a thin film transistor and a storage capacitor |
| 11/07/2006 | US7133072 Image processing apparatus having an image correction circuit and its processing method |
| 11/07/2006 | US7132751 Memory cell using silicon carbide |
| 11/07/2006 | US7132747 Multilayer integrated circuit for RF communication and method for assembly thereof |
| 11/07/2006 | US7132739 Encapsulated stack of dice and support therefor |
| 11/07/2006 | US7132736 Devices having compliant wafer-level packages with pillars and methods of fabrication |
| 11/07/2006 | US7132731 Semiconductor component and assembly having female conductive members |
| 11/07/2006 | US7132730 Bulk nitride mono-crystal including substrate for epitaxy |
| 11/07/2006 | US7132729 Semiconductor device and method of manufacturing same |
| 11/07/2006 | US7132728 Non-volatile memory devices including fuse covered field regions |
| 11/07/2006 | US7132727 Layout technique for C3MOS inductive broadbanding |
| 11/07/2006 | US7132726 Integrated semiconductor circuit having a logic and power metallization without intermetal dielectric |
| 11/07/2006 | US7132725 Semiconductor device |