H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2006
12/07/2006	US20060273404 TFT charge storage memory cell having high-mobility corrugated channel
12/07/2006	US20060273403 Semiconductor device having a diode for a rectifier circuit
12/07/2006	US20060273402 Semiconductor device and method of manufacture
12/07/2006	US20060273401 Manufacturing method of CMOS type semiconductor device, and CMOS type semiconductor device
12/07/2006	US20060273400 High voltage analog switch ICS and ultrasound imaging systems using same
12/07/2006	US20060273394 Semiconductor device and method of manufacturing same
12/07/2006	US20060273393 Structure and method of making field effect transistor having multiple conduction states
12/07/2006	US20060273392 Semiconductor device and method of manufacturing the same
12/07/2006	US20060273391 CMOS devices for low power integrated circuits
12/07/2006	US20060273390 Gate contact and runners for high density trench MOSFET
12/07/2006	US20060273389 Vertical FET with nanowire channels and a silicided bottom contact
12/07/2006	US20060273388 Semiconductor device and method for manufacturing the same
12/07/2006	US20060273386 Trench-gate field effect transistors and methods of forming the same
12/07/2006	US20060273385 Trenched MOSFET device with contact trenches filled with tungsten plugs
12/07/2006	US20060273384 Structure for avalanche improvement of ultra high density trench MOSFET
12/07/2006	US20060273383 High density hybrid MOSFET device
12/07/2006	US20060273382 High density trench MOSFET with low gate resistance and reduced source contact space
12/07/2006	US20060273381 Transistor and method for fabricating the same
12/07/2006	US20060273380 Source contact and metal scheme for high density trench MOSFET
12/07/2006	US20060273379 MOSFET using gate work function engineering for switching applications
12/07/2006	US20060273378 Bidirectional split gate nand flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing
12/07/2006	US20060273377 Nonvolatile memory device and method of manufacturing the same
12/07/2006	US20060273376 Method of manufacturing devices comprising conductive nano-dots, and devices comprising same
12/07/2006	US20060273375 Transistor with nanocrystalline silicon gate structure
12/07/2006	US20060273374 Semiconductor device and manufacturing method thereof
12/07/2006	US20060273373 Semiconductor device
12/07/2006	US20060273370 NROM flash memory with vertical transistors and surrounding gates
12/07/2006	US20060273369 Capacitor for semiconductor device and method of forming the same
12/07/2006	US20060273368 Semiconductor device having capacitor with upper electrode of conductive oxide and its manufacture method
12/07/2006	US20060273367 Semiconductor device and manufacturing method therefor
12/07/2006	US20060273366 Methods of manufacturing ferroelectric capacitors and semiconductor devices
12/07/2006	US20060273365 Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device
12/07/2006	US20060273357 Semiconductor device and manufacturing method thereof
12/07/2006	US20060273355 CMOS image sensor and method for manufacturing the same
12/07/2006	US20060273354 Pixel of image sensor and method for fabricating the same
12/07/2006	US20060273353 CMOS active pixel sensor shared amplifier pixel with reduced sense node capacitance
12/07/2006	US20060273352 CMOS imager pixel designs
12/07/2006	US20060273351 Vertical type semiconductor device and method for manufacturing the same
12/07/2006	US20060273346 Edge structure with voltage breakdown in the linear region
12/07/2006	US20060273345 Method of manufacturing liquid crystal display, liquid crystal display, and aging system
12/07/2006	US20060273344 Semiconductor devices having transistors with different gate structures and methods of fabricating the same
12/07/2006	US20060273340 LED package and method using the same
12/07/2006	US20060273339 Contacting Scheme for Large and Small Area Semiconductor Light Emitting Flip Chip Devices
12/07/2006	US20060273336 Light emitting diode and manufacturing method thereof
12/07/2006	US20060273333 Light emitting diode and method of fabricating thereof
12/07/2006	US20060273329 Semiconductor device
12/07/2006	US20060273322 Silicon layer with high resistance and fabricating method thereof
12/07/2006	US20060273321 CMOS image sensor and method for fabricating the same
12/07/2006	US20060273320 Method of manufacturing semiconductor device
12/07/2006	US20060273319 Integrated circuit device and manufacturing method thereof
12/07/2006	US20060273318 Displaying device with photocurrent-reducing structure and method of manufacturing the same
12/07/2006	US20060273317 Semiconductor Device and Method of Fabricating the Same
12/07/2006	US20060273316 Array substrate having enhanced aperture ratio, method of manufacturing the same and display apparatus having the same
12/07/2006	US20060273315 Liquid crystal display device and fabrication method thereof
12/07/2006	US20060273314 Display device with improved pixel light emission and manufacturing method of the same
12/07/2006	US20060273313 IC packaging technique
12/07/2006	US20060273312 Electronic element
12/07/2006	US20060273311 Organic semiconductor material, organic semiconductor thin film and organic semiconductor device
12/07/2006	US20060273310 Light-Emitting Component with an Arrangement of Electrodes
12/07/2006	US20060273309 Workpiece including electronic components and conductive members
12/07/2006	US20060273308 Electronic device including conductive members between a first workpiece and second workpiece
12/07/2006	US20060273307 Electronic device including a first workpiece, a second workpiece, and a conductive member substantially directly bonded to the first and second workpieces
12/07/2006	US20060273305 Printing conductive patterns using LEP
12/07/2006	US20060273303 Organic thin film transistors with multilayer electrodes
12/07/2006	US20060273302 Barrier layer for an organic electronic device
12/07/2006	US20060273301 High speed electron tunneling devices
12/07/2006	US20060273300 III-V Group GaN-based compound semiconductor device
12/07/2006	US20060273299 Method for making a semiconductor device including a dopant blocking superlattice
12/07/2006	US20060273298 Rewriteable memory cell comprising a transistor and resistance-switching material in series
12/07/2006	US20060273288 electron accepting group such as naphthoquinone or 1,4-dihydro-1,4-dioxo-2,3-Naphthalenedicarbonitrile, that is bound to the polymer to induce or enhance the charge carrier mobility or electroconductivity of said polymers, used in optical, electrooptical or electronic apparatus
12/07/2006	US20060272422 Pressure sensor device
12/07/2006	DE112004002653T5 Halbleitervorrichtungs-Modulstruktur The semiconductor device module structure
12/07/2006	DE102006019931A1 Trench-Gate-Halbleitervorrichtung Trench-gate semiconductor device
12/07/2006	DE10024518B4 Integriertes Halbleiterschaltelement und Herstellungsverfahren Integrated semiconductor switching element and methods of manufacture
12/07/2006	CA2609042A1 Light emitting nanowires for macroelectronics
12/07/2006	CA2549107A1 Organic thin film transistors with multilayer electrodes
12/06/2006	EP1729356A1 Switching device
12/06/2006	EP1728279A2 Trench-gate transistors and their manufacture
12/06/2006	EP1728274A2 Method for forming a semiconductor device having a notched control electrode and structure thereof
12/06/2006	EP1728273A1 Transistor with adapted source, drain and channel materials and integrated circuit comprising same
12/06/2006	EP1728271A1 Laser irradiation method and laser irradiation apparatus
12/06/2006	EP1728270A1 Method of manufacturing a semiconductor device and semiconductor device obtained with such a method
12/06/2006	EP1728269A1 Method for making a field-effect transistor with diamond-like carbon channel and resulting transistor
12/06/2006	EP1504474A4 Trench mosfet with field relief feature
12/06/2006	EP1155460A4 Quantum well thermoelectric material on very thin substrate
12/06/2006	CN2845173Y High voltage MOS element structure
12/06/2006	CN1875497A Conductive thin film and thin-film transistor
12/06/2006	CN1875496A 垂直有机场效应晶体管 Vertical organic field effect transistor
12/06/2006	CN1875489A Method for producing a vertical field effect transistor and vertical field effect transistor
12/06/2006	CN1875488A Liquid crystal display device, its manufacturing method, and liquid crystal television receiver
12/06/2006	CN1875485A Structure and programming of laser fuse
12/06/2006	CN1875482A Method of fabricating a finfet
12/06/2006	CN1875475A An advanced technique for forming transistors having raised drain and source regions with different height
12/06/2006	CN1875468A Method of making nonvolatile transistor pairs with shared control gate
12/06/2006	CN1875463A Method for integrating a high-k gate dielectric in a transistor fabrication process
12/06/2006	CN1875459A A device and method for inhibiting oxidation of contact plugs in ferroelectric capacitor devices
12/06/2006	CN1875456A Confined spacers for double gate transistor semiconductor fabrication process
12/06/2006	CN1874630A Electro-optical device
12/06/2006	CN1874060A Method for manufacturing antenna and method for manufacturing semiconductor device
12/06/2006	CN1874026A 电光装置和电子装置 Electro-optical devices and electronic devices

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