H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2006
11/23/2006	US20060261331 Semiconductor device
11/23/2006	US20060261329 Organic electroluminescence devices
11/23/2006	US20060261328 Blue light-emitting compounds, processes of preparing the same, and luminescent element including the same
11/23/2006	US20060261327 Semiconductor device having a semiconductor-on-insulator configuration and a superlattice
11/23/2006	US20060261326 Semiconductor device with different lattice properties
11/23/2006	US20060261324 Photonic crystal optical circuit and method for controlling the same
11/23/2006	US20060261323 Vertical nitride based semiconductor light emitting device having improved light extraction efficiency
11/23/2006	US20060261322 Flat panel display
11/23/2006	US20060261219 Highway-rail grade crossing controller with out of service mode
11/23/2006	US20060260674 Nano ic
11/23/2006	US20060260669 Discotic liquid crystal based electronic device using interdigit structure electrode
11/23/2006	US20060260398 Method and apparatus for measuring frequency characteristics of acceleration sensor
11/23/2006	DE19747159B4 Halbleiterbauteil mit MOS-Gatesteuerung und Verfahren zu seiner Herstellung A semiconductor device comprising MOS gated and process for its preparation
11/23/2006	DE19610283B4 Verfahren zum Herstellen einer Flüssigkristallanzeigevorrichtung mit Speicherkondensatoren erhöhter Kapazität und Flüssigkristallvorrichtung A method of manufacturing a liquid crystal display device with increased capacity and storage capacitors liquid crystal device
11/23/2006	DE10255866B4 Verfahren und Strukturen zur Erhöhung der Strukturdichte und der Speicherkapazität in einem Halbleiterwafer Methods and structures to increase the structural density and the memory capacity in a semiconductor wafer
11/23/2006	DE10230674B4 Halbleiterkondensator und damit aufgebauter MOSFET Semiconductor capacitor and thus constructed MOSFET
11/23/2006	DE102006019602A1 Leiterplatte Circuit board
11/23/2006	DE102005023479A1 Thyristor with semiconductor body having different amplifying factors in inner and outer regions has p and n base and emitter transistor structure and a laterally dependent amplification factor
11/23/2006	DE102005023361A1 Feldeffekttransistor Field-effect transistor
11/23/2006	DE102005021302A1 Charge carrier life adjusting method for use in e.g. thyristor, involves heating one of areas of semiconductor body with laser light by irradiating one of surfaces of semiconductor body to heal defects in surface
11/23/2006	CA2607885A1 Through-wafer interconnection
11/22/2006	EP1724822A1 Semiconductor substrate and manufacturing method thereof
11/22/2006	EP1724818A2 Method for forming fully silicided gates and devices obtained thereby
11/22/2006	EP1724790A1 Thin-film transistor and thin-film transistor substrate and production methods for them and liquid crystal display unit using these and related device and method, and, sputtering target and transparent conductive film formed by using this and transparent electrode and related device and method
11/22/2006	EP1724028A1 Thin film of condensed polycyclc aromatic compound, and method for preparing thin film of condensed polycyclc aromatic compound
11/22/2006	EP1723680A1 Pn diode based on silicon carbide and method for the production thereof
11/22/2006	EP1723679A1 Semiconductor device having channel including gallium oxide
11/22/2006	EP1723678A1 Semiconductor device having channel including multicomponent oxide
11/22/2006	EP1723677A1 Semiconductor device having channel including multicomponent oxide
11/22/2006	EP1723676A2 Nano-enabled memory devices and anisotropic charge carrying arrays
11/22/2006	EP1723675A2 Adaptive voltage control for performance and energy optimization
11/22/2006	EP1723673A2 Method of making a semiconductor device, and semiconductor device made thereby
11/22/2006	EP1723672A1 Semi-conductor element comprising an integrated Zener diode and method for the production thereof
11/22/2006	EP1723668A1 Method of fabricating a strained finfet channel
11/22/2006	EP1723399A2 Qwip with tunable spectral response
11/22/2006	EP1639653A4 Self-aligned conductive lines for fet-based magnetic random access memory devices and method of forming the same
11/22/2006	EP1393359A4 Rector having a movable shuter
11/22/2006	EP1350290B1 Silicon wafer with embedded optoelectronic material for monolithic oeic
11/22/2006	EP1320886A4 Dram fabricated on a silicon-on-insulator (soi) substrate having bi-level digit lines
11/22/2006	EP1290723B1 Method for forming patterns
11/22/2006	EP0966756B1 Ion implantation process
11/22/2006	EP0832498B1 Method of manufacturing a power integrated circuit device
11/22/2006	CN1868070A Group-III nitride semiconductor device
11/22/2006	CN1868069A Recess channel flash architecture for reduced short channel effect
11/22/2006	CN1868068A Fully depleted silicon-on-insulator CMOS logic
11/22/2006	CN1868067A Transistor having three electrically isolated electrodes and method of formation
11/22/2006	CN1868066A Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
11/22/2006	CN1868065A Integrated circuit package having an inductance loop formed from a multi-loop configuration
11/22/2006	CN1868061A Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same
11/22/2006	CN1868046A Semiconductor device and method of manufacturing such a semiconductor device
11/22/2006	CN1868045A Schottky-barrier MOSFET manufacturing method using isotropic etch process
11/22/2006	CN1868002A Nanotube-based switching elements with multiple controls and circuits made from same
11/22/2006	CN1866545A Air tunnel floating gate memory cell and method for making the same
11/22/2006	CN1866544A Nonvolatile semiconductor memory device
11/22/2006	CN1866543A 薄膜晶体管 Thin film transistor
11/22/2006	CN1866542A MOS field effect transistor with isolating structure and making method thereof
11/22/2006	CN1866541A Field effect transistor and method for manufacturing same
11/22/2006	CN1866540A Semiconductor device and manufacturing method thereof
11/22/2006	CN1866539A 集成电路元件及其形成方法 Integrated circuit device and method of forming the
11/22/2006	CN1866538A 半导体衬底及其制造方法 A semiconductor substrate and manufacturing method thereof
11/22/2006	CN1866528A Stress inducing spacers
11/22/2006	CN1866526A Nonvolatile semiconductor storage device
11/22/2006	CN1866519A Bank structure, wiring pattern forming method, device, electro-optical device, and electronic apparatus
11/22/2006	CN1866482A Thin film transistor and making method thereof
11/22/2006	CN1866479A Power junction field effect transistor structure and making method thereof
11/22/2006	CN1866478A Power junction field effect transistor structure and making method thereof
11/22/2006	CN1866401A Semiconductor memory device using only single-channel transistor to apply voltage to selected word line
11/22/2006	CN1866117A Liquid crystal display apparatus and method
11/22/2006	CN1866099A Display panel and method of manufacturing the same, and transflective liquid crystal display with the same
11/22/2006	CN1866092A Liquid crystal display device and fabrication method thereof
11/22/2006	CN1286187C Trench Schottky rectifier
11/22/2006	CN1286186C Switch transistor energy waste reducing method and insulator device on transverse thin film silicon
11/22/2006	CN1286185C Vertical metal-oxide-semiconductor transistor
11/22/2006	CN1286184C Silicon carbide metal-semiconductor field effect transistors and methods of fabricating silicon carbide metal-semiconductor field effect transistors
11/22/2006	CN1286183C Multi-threshold MIS integrated circuit device and circuit designing method
11/22/2006	CN1286182C Highly-integrated semiconductor memory and process for preparation of the memory
11/22/2006	CN1286179C Nonvolatile semiconductor storing device and its manufacturing mehod
11/22/2006	CN1286174C Electrostatic charging protective circuit
11/22/2006	CN1286163C Semiconductor storage device and its manufacturing method
11/22/2006	CN1286157C Semiconductor device and method for fabricating the same
11/22/2006	CN1286156C Method for mfg. semiconductor device
11/22/2006	CN1286153C Dielectric layer method for etching wafer
11/22/2006	CN1286149C Contacts to semiconductor fin devices and manufacturing method thereof
11/22/2006	CN1286148C Electrooptic apparatus and its mfg. method, and electronic apparatus
11/22/2006	CN1286118C Semiconductor storage device
11/22/2006	CN1286079C Panel display for small scale mode application
11/21/2006	US7139202 Semiconductor storage device, mobile electronic apparatus, and method for controlling the semiconductor storage device
11/21/2006	US7139193 Non-volatile memory with two adjacent memory cells sharing same word line
11/21/2006	US7139056 Liquid crystal display device having particular orientation control window
11/21/2006	US7139045 Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same
11/21/2006	US7139043 Thin film transistor array panel
11/21/2006	US7138987 Protection circuit for input and output of liquid crystal display
11/21/2006	US7138846 Field effect transistor switch circuit
11/21/2006	US7138832 Nanotube-based switching elements and logic circuits
11/21/2006	US7138817 Method and apparatus for testing defective portion of semiconductor device
11/21/2006	US7138748 Method of enlarging a travel of piezoelectric sensor and MEMS switch employing the same
11/21/2006	US7138723 Deformable semiconductor device
11/21/2006	US7138721 Memory module
11/21/2006	US7138718 Multilevel interconnect structure with low-k dielectric
11/21/2006	US7138717 HDP-based ILD capping layer

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