H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2006
12/21/2006	US20060284171 Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
12/21/2006	US20060284170 Transparent Light-Emitting Component
12/21/2006	US20060284168 Light emitting device
12/21/2006	US20060284167 Multilayered substrate obtained via wafer bonding for power applications
12/21/2006	US20060284166 Polymer transistor
12/21/2006	US20060284165 Silicon-based backward diodes for zero-biased square law detection and detector arrays of same
12/21/2006	US20060284162 Programmable optical component for spatially controlling the intensity of beam of radiation
12/21/2006	US20060284161 Light source module and vehicle lamp
12/21/2006	US20060284159 Phase change memory device and method for manufacturing the same
12/21/2006	US20060284158 Self-aligned, embedded phase change ram and manufacturing method
12/21/2006	US20060284157 Thin film plate phase change RAM circuit and manufacturing method
12/21/2006	US20060284156 Phase change memory cell defined by imprint lithography
12/21/2006	US20060284155 Switching device
12/21/2006	DE19903028B4 MOS-Halbleiteranordnung MOS semiconductor device
12/21/2006	DE10334841B4 Herstellungsverfahren für einen Grabenkondensator mit einem Isolationskragen, der über einen vergrabenen Kontakt einseitig mit einem Substrat elektrisch verbunden ist, insbesondere für eine Halbleiterspeicherzelle Manufacturing method for a grave capacitor with an insulation collar, which is electrically connected through a buried contact on one side with a substrate, in particular for a semiconductor memory cell
12/21/2006	DE10230715B4 Verfahren zur Herstellung eines Vertikaltransistors A method for producing a vertical transistor
12/21/2006	DE102006028342A1 Semiconductor device e.g. insulated gate bipolar transistor, manufacture for e.g. microwave oven, involves providing device structure in main surface of substrate by optimizing silicon concentration and thickness of electrode
12/21/2006	DE102005043916B3 Power semiconductor component and production process has semiconductor body with drift zone, transition and a two-section dielectric layer between the drift zone and a field electrode
12/21/2006	DE102005027366A1 Monolithisch integrierte Halbleiteranordnung mit einem Leistungsbauelement und Verfahren zur Herstellung einer monolithisch integrierten Halbleiteranordnung Monolithic integrated semiconductor arrangement having a power component and method for manufacturing a monolithically integrated semiconductor arrangement
12/21/2006	DE102005026528A1 Halbleiterbauteil mit Medienkanal und Verfahren zur Herstellung desselben Of the same semiconductor device with media channel and methods for preparing
12/20/2006	EP1734586A1 Method for manufacturing semiconductor device
12/20/2006	EP1734568A2 Method of fabricating an insulated transistor having a strained channel
12/20/2006	EP1734400A1 Liquid crystal display device
12/20/2006	EP1733435A1 Semiconductor device having channel including zinc-indium oxide
12/20/2006	EP1733434A1 Semiconductor device having channel comprising multicomponent metal oxide
12/20/2006	EP1733433A1 Semiconductor device having channel comprising a mixture of binary oxides
12/20/2006	EP1733432A1 Semiconductor device having channel fabricated from multicomponent oxide
12/20/2006	EP1733431A1 Trench semiconductor device and method of manufacturing it
12/20/2006	EP1733430A1 A bipolar junction transistor having a high germanium concentration in a silicon-germanium layer and a method for forming the bipolar junction transistor
12/20/2006	EP1733429A1 Limiter and semiconductor device using the same
12/20/2006	EP1733414A2 Cold atom system with atom chip wall
12/20/2006	EP1733077A2 Nanocrystal doped matrixes
12/20/2006	EP1488284B1 Photomask and method for photolithographic patterning of a substrate by use of phase shifted assist features
12/20/2006	EP1328970B1 Method for producing a dmos transistor
12/20/2006	EP1266054B1 Graded thin films
12/20/2006	CN2849683Y Silicon capacitance pressure sensitive device packing structure
12/20/2006	CN1883058A Semiconductor element and manufacturing method for the same
12/20/2006	CN1883054A NROM flash memory devices on ultrathin silicon
12/20/2006	CN1883053A Strained semiconductor devices
12/20/2006	CN1883052A Diamond n-type semiconductor, manufacturing method thereof, semiconductor element, and electron emitting element
12/20/2006	CN1883051A IGBT cathode design with improved safe operating area capability
12/20/2006	CN1883047A Apparatus and method for split gate NROM memory
12/20/2006	CN1883046A Charge-trapping memory device and methods for operating and manufacturing the cell
12/20/2006	CN1883041A Self aligned damascene gate
12/20/2006	CN1883040A Method for improving transistor performance through reducing the salicide interface resistance
12/20/2006	CN1881620A Semiconductor device and a manufacturing method for the same
12/20/2006	CN1881619A 半导体器件 Semiconductor devices
12/20/2006	CN1881618A 便携式信息终端 A portable information terminal
12/20/2006	CN1881617A Display device and method for manufacturing same
12/20/2006	CN1881616A Method for using MOSFET as antifuse
12/20/2006	CN1881615A Electrically erasable programmable read only memory (eeprom) cell and method for making the same
12/20/2006	CN1881614A Mosfet-type semiconductor device, and method of manufacturing the same
12/20/2006	CN1881613A High-voltage mos device
12/20/2006	CN1881612A Semiconductor device with trench structure and method for manufacturing same
12/20/2006	CN1881611A Semiconductor device with trench structure and method for manufacturing same
12/20/2006	CN1881610A 半导体器件 Semiconductor devices
12/20/2006	CN1881607A Semiconductor device and manufacturing method thereof
12/20/2006	CN1881596A Semiconductor device and a method of manufacturing the same
12/20/2006	CN1881595A Semiconductor device and its manufacturing method
12/20/2006	CN1881594A Semiconductor device and its manufacturing method
12/20/2006	CN1881592A Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices
12/20/2006	CN1881568A Semiconductor device and its production method
12/20/2006	CN1881563A Semiconductor structure and method for forming semiconductor transistor
12/20/2006	CN1881547A Silicon wafer for igbt and method for producing same
12/20/2006	CN1881546A Semiconductor device with trench structure and its manufacture method
12/20/2006	CN1881537A Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method
12/20/2006	CN1881470A Memory cells and identification method and memory array and detection method thereof
12/20/2006	CN1881055A Liquid display device and bad pixel repairing method
12/20/2006	CN1881054A Pixel structure and patching method thereof
12/20/2006	CN1881015A Liquid crystal display panel and fabricating method thereof
12/20/2006	CN1291500C Semiconductor device and producing method thereof
12/20/2006	CN1291499C Intermediate product for dual-gate logic device and its making method
12/20/2006	CN1291496C Configuration in power MOSFET
12/20/2006	CN1291492C Semiconductor switch circuit device and making method therefor
12/20/2006	CN1291491C Semiconductor unit and method for making the same
12/20/2006	CN1291489C Power amplifier with radiator
12/20/2006	CN1291484C Semiconductor device and method for fabricating the same
12/20/2006	CN1291483C Trench Schottky barrier diode
12/20/2006	CN1291477C Method for improving electrical property quality of inner connecting line structure
12/20/2006	CN1291461C Dielectric film, semiconductor device and manufacture methods thereof
12/20/2006	CN1291457C Method for producing semiconductor diode electrode
12/20/2006	CN1291452C Polysilicon crystallization method, thin film transistor and manufacture method of liquid crystal display thereof
12/20/2006	CN1291450C Semiconductor producing method and equipment
12/20/2006	CN1291363C Display apparatus using bidirectional two-terminal element and display apparatus manufacturing method
12/20/2006	CN1291276C Method for fabricating thin film transistors
12/20/2006	CN1291273C Electrooptical device and electronic appliance
12/20/2006	CN1291270C Method for preparing semi-transparent and semi-reflective thin-film transistor liquid-crystal display
12/20/2006	CN1291266C 图像显示装置 The image display apparatus
12/19/2006	US7151693 Method of writing data to a non-volatile semiconductor memory
12/19/2006	US7151686 Semiconductor memory device and electric device with the same
12/19/2006	US7151685 Semiconductor memory device capable of realizing a chip with high operation reliability and high yield
12/19/2006	US7151659 Gapped-plate capacitor
12/19/2006	US7151587 Liquid crystal display device and method of fabricating the same
12/19/2006	US7151579 Thin film transistor array substrate and repairing method of the same
12/19/2006	US7151401 Semiconductor apparatus
12/19/2006	US7151319 Semiconductor device
12/19/2006	US7151318 Semiconductor component and method for contacting said semiconductor component
12/19/2006	US7151304 Method to reduce switch threshold of soft magnetic films
12/19/2006	US7151303 Fully-depleted (FD) (SOI) MOSFET access transistor
12/19/2006	US7151302 Method and apparatus for maintaining topographical uniformity of a semiconductor memory array

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