Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2006
12/21/2006WO2006083383A3 Low temperature grown insulated gate phemt device
12/21/2006WO2006036985A3 Shallow source mosfet
12/21/2006WO2006033838A3 Poly-silicon-germanium gate stack and method for forming the same
12/21/2006WO2005089477A3 Direct cooling of leds
12/21/2006WO2005057622A3 Structure and method for iii-nitride device isolation
12/21/2006WO2005055281A3 Flexible electronics using ion implantation to adhere polymer substrate to single crystal silicon substrate
12/21/2006WO2005041366A3 Quantum dot structures
12/21/2006WO2005027192A3 Structure and method of making strained channel cmos transistors having lattice-mismatched epitaxial extension and source and drain regions
12/21/2006US20060286788 Method for making a wire nanostructure in a semiconductor film
12/21/2006US20060286787 Method of manufacturing semiconductor device and semiconductor device
12/21/2006US20060286786 Method and apparatus for increase strain effect in a transistor channel
12/21/2006US20060286780 Method for forming silicon thin-film on flexible metal substrate
12/21/2006US20060286766 Isolation structures for preventing photons and carriers from reaching active areas and methods of formation
12/21/2006US20060286757 Semiconductor product and method for forming a semiconductor product
12/21/2006US20060286755 Method for fabricating transistor with thinned channel
12/21/2006US20060286751 Semiconductor device and method for manufacturing the same
12/21/2006US20060286740 A method for forming a device having multiple silicide types
12/21/2006US20060286734 MIM/MIS structure with praseodymium titanate or praseodymium oxide as insulator material
12/21/2006US20060286732 Power semiconductor device
12/21/2006US20060286726 Forming interconnects
12/21/2006US20060286724 Substrate backgate for trigate fet
12/21/2006US20060286723 Electrode structure, fabrication method thereof and pdp utilizing the same
12/21/2006US20060286707 Substrate contact for a capped MEMS and method of making the substrate contact at the wafer level
12/21/2006US20060286704 Pattern forming method, device, method of manufacture thereof, electro-optical apparatus, and electronic apparatus
12/21/2006US20060286698 Electro-optical device, method of manufacturing the same, and electronic apparatus
12/21/2006US20060286695 Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type iii-v group compound semiconductor layer, method for growing semiconductor layer, and method for growing layer
12/21/2006US20060286688 Integrated circuitry and method for manufacturing the same
12/21/2006US20060285049 Liquid crystal display and thin film transistor panel therefor
12/21/2006US20060285045 Liquid Crystal Display Device Having Particular Drain Lines and Orientation Control Window
12/21/2006US20060285027 Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same
12/21/2006US20060284320 Electronic component and semiconductor device, method of fabricating the same, circuit board mounted with the same, and electronic appliance comprising the circuit board
12/21/2006US20060284285 Manufacturing method for a semiconductor device, semiconductor device, circuit substrate and electronic device
12/21/2006US20060284284 Epitaxial semiconductor layer and method
12/21/2006US20060284283 Semiconductor device and manufacturing method thereof
12/21/2006US20060284282 Heterjunction bipolar transistor with tunnelling mis emitter junction
12/21/2006US20060284281 Three dimensional, 2R memory having a 4F2 cell size RRAM and method of making the same
12/21/2006US20060284280 Electrodes, inner layers, capacitors, electronic devices and methods of making thereof
12/21/2006US20060284279 Thin film fuse phase change RAM and manufacturing method
12/21/2006US20060284278 Area diode formation in SOI application
12/21/2006US20060284277 Semiconductor device including bit line formed using damascene technique and method of fabricating the same
12/21/2006US20060284272 Gate structure and method for preparing the same
12/21/2006US20060284271 Metal gate device with reduced oxidation of a high-k gate dielectric
12/21/2006US20060284270 Semiconductor device and method for manufacturing the same
12/21/2006US20060284269 Method for forming raised structures by controlled selective epitaxial growth of facet using spacer
12/21/2006US20060284268 Semiconductor integrated circuit device
12/21/2006US20060284267 Flash memory and fabrication method thereof
12/21/2006US20060284266 High voltage N-channel LDMOS devices built in a deep submicron CMOS process
12/21/2006US20060284265 High voltage N-channel LDMOS devices built in a deep submicron CMOS process
12/21/2006US20060284264 Semiconductor device and manufacturing method thereof
12/21/2006US20060284263 Semiconductor device and fabrication method thereof
12/21/2006US20060284262 Semiconductor wafer having different impurity concentrations in respective regions
12/21/2006US20060284261 Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods
12/21/2006US20060284260 Vertical diode formation in SOI application
12/21/2006US20060284259 Semiconductor device and method of manufacturing the same
12/21/2006US20060284248 Semiconductor device and method of fabricating the same
12/21/2006US20060284247 Novel method for integrating silicon CMOS and AlGaN/GaN wideband amplifiers on engineered substrates
12/21/2006US20060284246 Memory utilizing oxide nanolaminates
12/21/2006US20060284245 Sonos memory device having curved surface and method for fabricating the same
12/21/2006US20060284244 Erasable non-volatile memory device using hole trapping in high-k dielectrics
12/21/2006US20060284243 Electrically erasable programmable read only memory (EEPROM) cell and method for making the same
12/21/2006US20060284242 Non-volatile memory device having floating gate and methods forming the same
12/21/2006US20060284241 Nanocrystal non-volatile memory device and method of fabricating the same
12/21/2006US20060284240 Structure of a non-volatile memory device and operation method
12/21/2006US20060284239 Flash cell using a piezoelectric effect
12/21/2006US20060284238 Non-volatile two-transistor programmable logic cell and array layout
12/21/2006US20060284237 Phase change memory cells having a cell diode and a bottom electrode self-aligned with each other and methods of fabricating the same
12/21/2006US20060284236 Back-side trapped non-volatile memory device
12/21/2006US20060284235 Low power flash memory devices
12/21/2006US20060284234 Structure of a non-volatile memory device and operation method
12/21/2006US20060284233 Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof
12/21/2006US20060284232 Semiconductor device having a capacitor and a fabrication method thereof
12/21/2006US20060284230 Vertical organic field effect transistor
12/21/2006US20060284229 Semiconductor device with a bit line contact plug and method of fabricating the same
12/21/2006US20060284228 Semiconductor device and method for fabricating the same
12/21/2006US20060284227 Capacitor device having low dependency of capacitance value change upon voltage
12/21/2006US20060284226 Semiconductor devices including a topmost metal layer with at least one opening and their methods of fabrication
12/21/2006US20060284225 Memory cell array and method of forming the same
12/21/2006US20060284224 Ferroelectric memory device and method of manufacturing the same
12/21/2006US20060284221 Semiconductor device and electronic device
12/21/2006US20060284220 Semiconductor device and manufacturing method of the semiconductor device
12/21/2006US20060284219 Semiconductor integrated circuit device method of fabricating the same
12/21/2006US20060284218 Nanoelectonic devices based on nanowire networks
12/21/2006US20060284217 Silicon carbide semiconductor device
12/21/2006US20060284215 Solid-state imaging device and method of manufacturing said solid-state imaging device
12/21/2006US20060284214 Thin film fuse phase change cell with thermal isolation layer and manufacturing method
12/21/2006US20060284213 Semiconductor device and method for fabricating the same
12/21/2006US20060284210 Capacitorless dram on bulk silicon
12/21/2006US20060284205 Flip-chip light-emitting device with micro-reflector
12/21/2006US20060284184 Display device
12/21/2006US20060284183 Semiconductor device and manufacturing method thereof
12/21/2006US20060284182 Liquid crystal display
12/21/2006US20060284181 Fabricating method for thin film transistor substrate and thin film transistor substrate using the same
12/21/2006US20060284180 Semiconductor device, EL display device, liquid crystal display device, and calculating device
12/21/2006US20060284179 Silicon thin film transistor and method of manufacturing the same
12/21/2006US20060284178 Active-matrix addressing substrate and method of fabricating the same
12/21/2006US20060284177 Image sensor with compact pixel layout
12/21/2006US20060284176 Switching device for a pixel electrode and methods for fabricating the same
12/21/2006US20060284175 Thin-film semiconductor substrate, method of manufacturing thin-film semiconductor substrate, method of crystallization, apparatus for crystallization, thin-film semiconductor device, and method of manufacturing thin-film semiconductor device
12/21/2006US20060284173 Method to test shallow trench isolation fill capability
12/21/2006US20060284172 Thin film transistor having oxide semiconductor layer and manufacturing method thereof