H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2006
12/14/2006	US20060278938 Low-power multiple-channel fully depleted quantum well CMOSFETs
12/14/2006	US20060278937 Semiconductor device and manufacturing method of the same
12/14/2006	US20060278936 Semiconductor device and fabrication method therefor
12/14/2006	US20060278935 Recessed transistors and methods of forming the same
12/14/2006	US20060278934 Semiconductor device and method of manufacturing semiconductor device
12/14/2006	US20060278933 Semiconductor device and manufacturing method thereof
12/14/2006	US20060278932 Secure electrically programmable fuse
12/14/2006	US20060278931 Electrostatic protection device for semiconductor circuit
12/14/2006	US20060278925 Power semiconductor device
12/14/2006	US20060278924 High-voltage mos device
12/14/2006	US20060278923 Integrated circuit and method for manufacturing an integrated circuit
12/14/2006	US20060278922 Trench transistor with increased avalanche strength
12/14/2006	US20060278921 Vertical MOSFET transistor, in particular operating as a selector in nonvolatile memory devices
12/14/2006	US20060278919 Semiconductor device and method for semiconductor device
12/14/2006	US20060278918 Semiconductor device and method for fabricating the same
12/14/2006	US20060278917 Floating gate structures
12/14/2006	US20060278916 Non-volatile semiconductor memory device having a two-layer gate electrode transistor and method of manufacturing the device
12/14/2006	US20060278915 FinFET split gate EEPROM structure and method of its fabrication
12/14/2006	US20060278914 Semiconductor device
12/14/2006	US20060278913 Non-volatile memory cells without diffusion junctions
12/14/2006	US20060278912 Selective polysilicon stud growth
12/14/2006	US20060278911 Relaxed-pitch method of aligning active area to digit line
12/14/2006	US20060278910 Vertical transistor, memory cell, device, system and method of forming same
12/14/2006	US20060278909 Mis transistor and cmos transistor
12/14/2006	US20060278908 Write line design in MRAM
12/14/2006	US20060278907 Semiconductor element, semiconductor sensor and semiconductor memory element
12/14/2006	US20060278905 CMOS pixel with dual gate PMOS
12/14/2006	US20060278903 Semiconductor device with electrostrictive layer in semiconductor layer and method of manufacturing the same
12/14/2006	US20060278902 Nano structure electrode design
12/14/2006	US20060278901 In-chip structures and methods for removing heat from integrated circuits
12/14/2006	US20060278900 Phase change memory device having an adhesion layer and manufacturing process thereof
12/14/2006	US20060278899 Phase change RAM device and method for manufacturing the same
12/14/2006	US20060278897 Multispectral Energy/Power Meter For Laser Sources
12/14/2006	US20060278896 Solid-state image sensing device
12/14/2006	US20060278895 Reprogrammable fuse structure and method
12/14/2006	US20060278893 A hybrid bypolar-mos trench gate semiconductor device
12/14/2006	US20060278892 Gallium nitride based high-electron mobility devices
12/14/2006	US20060278889 Power rectifier and manufacturing method thereof
12/14/2006	US20060278884 Substrate-free flip chip light emitting diode and manufacturing method thereof
12/14/2006	US20060278878 Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and processes for production thereof
12/14/2006	US20060278877 Thin film transistor array panel and method of manufacturing the same
12/14/2006	US20060278876 Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
12/14/2006	US20060278875 Semiconductor device and manufacturing method thereof
12/14/2006	US20060278874 Liquid crystal display device
12/14/2006	US20060278873 Liquid crystal display apparatus
12/14/2006	US20060278872 Switching device for a pixel electrode and methods for fabricating the same
12/14/2006	US20060278870 Semiconductor device having a second level of metallization formed over a first level with minimal damage to the first level and method
12/14/2006	US20060278869 Photoelectric conversion layer, photoelectric conversion device and imaging device, and method for applying electric field thereto
12/14/2006	US20060278868 Functional molecular element, method for producing functional molecular element, and functional molecular device
12/14/2006	US20060278867 Living synthesis of conducting polymers including regioregular polymers, polythiophenes, and block copolymers
12/14/2006	US20060278866 Nanotube optoelectronic memory devices
12/14/2006	US20060278864 Light-emitting device
12/14/2006	US20060278863 Phase change ram device and method for fabricating the same
12/14/2006	DE112004002641T5 Verfahren zur Herstellung eines verformten FinFET-Kanals A process for producing a strained FinFET channel
12/14/2006	DE112004002310T5 Trench-Metalloxid-Halbleiter-Feldeffekttransisstor mit geschlossenen Zellen Trench metal-oxide-semiconductor Feldeffekttransisstor closed cell
12/14/2006	DE112004002107T5 Selbstjustiertes Damaszener-Gate Self Tuned Damascus Gate
12/14/2006	DE10355273B4 Magnetische Speichervorichtungen mit wahlfreiem Zugang (MRAM) mit nicht parallelen Haupt- und Bezugs-Magnetwiderständen Magnetic Speichervorichtungen random access memory (MRAM) with non-parallel main and reference magnetic resistors
12/14/2006	DE10336397B4 Vorrichtung zum Speichern digitaler Daten An apparatus for storing digital data
12/14/2006	DE102005024943A1 Silicon-on-insulator-insulated gate bipolar transistor, has insulation structure designed between body sections that are electrically insulated from each other, where current is generated in operating state, and structure has hollow space
12/14/2006	DE10101825B4 Verfahren zur Herstellung eines Halbleiter-Bauelements mit einer T-förmigen Kontaktelektrode A process for producing a semiconductor device having a T-shaped contact electrode
12/13/2006	EP1732133A2 Semiconductor device and method for fabricating the same
12/13/2006	EP1732125A2 Method for forming a semiconductor memory device with buried contacts
12/13/2006	EP1732115A1 Tft sheet and method for manufacturing same
12/13/2006	EP1732114A2 Silicon wafer for IGBT and method for producing same
12/13/2006	EP1732112A1 Method for manufacturing semiconductor device
12/13/2006	EP1732109A2 Mask formation over an integrated electronic circuit
12/13/2006	EP1730951A1 Radiation tolerant ccd structure
12/13/2006	EP1730919A1 Accelerated tcp (transport control protocol) stack processing
12/13/2006	EP1730796A1 Method for producing electronic components and electronic components produce by said method
12/13/2006	EP1730786A1 Enhancing strained device performance by use of multi narrow section layout
12/13/2006	EP1730785A2 Bipolar-transistor and method for the production of a bipolar-transistor
12/13/2006	EP1730784A2 Methods for packaging a light emitting device and packaged light emitting devices
12/13/2006	EP1730783A2 Blue light emitting semiconductor nanocrystal materials
12/13/2006	EP1730337A2 Inorganic nanowires
12/13/2006	EP1520293B1 Method for the production of a short channel field effect transistor
12/13/2006	EP1419519A4 Coupled quantum dot and quantum well semiconductor device and method of making the same
12/13/2006	EP1307750B1 Micromechanical component
12/13/2006	EP1221179A4 Strongly textured atomic ridges and dots
12/13/2006	EP1216397B1 Microfabricated tuning fork gyroscope and associated three-axis inertial measurement system to sense out-of-plane rotation
12/13/2006	EP1000439B1 Method of forming side dielectrically isolated semiconductor devices
12/13/2006	EP0976148B1 Method for nitriding the gate oxide layer of a semiconductor device
12/13/2006	EP0858110B1 Separating method, method for transferring thin film device, and liquid crystal display device manufactured by using the transferring method
12/13/2006	CN2847534Y III-V family compound semiconductor P type ohmic electrode
12/13/2006	CN1879235A Method for orientation treatment of electronic functional material and thin film transistor
12/13/2006	CN1879224A Low-power multiple-channel fully depleted quantum well CMOSFETS
12/13/2006	CN1879223A Thin film transistor and process for fabricating the same
12/13/2006	CN1879222A Trench gate field effect devices
12/13/2006	CN1879221A Bipolar junction transistor with improved extrinsic base region and method of fabrication
12/13/2006	CN1879219A Semiconductor memory device with increased node capacitance
12/13/2006	CN1879216A Bipolar and CMOS integration with reduced contact height
12/13/2006	CN1879210A Method for forming non-amorphous, ultra-thin semiconductor devices using sacrificial implantation layer
12/13/2006	CN1879209A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
12/13/2006	CN1879207A Reduction of boron diffusivity in pFETS
12/13/2006	CN1879206A Contoured insulator layer of silicon-on-insulator wafers and process of manufacture
12/13/2006	CN1879177A NROM flash memory with self-aligned structural charge separation
12/13/2006	CN1879175A Programming method based on the behaviour of non-volatile memory cenlls
12/13/2006	CN1879141A Pixel circuit, display apparatus, and method for driving pixel circuit
12/13/2006	CN1879054A Thin film transistor array panel and method of manufacturing the same
12/13/2006	CN1877877A Nitride semiconductor substrate and method of producing same
12/13/2006	CN1877863A Organic thin film transistors with multilayer electrodes

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