H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2006
11/02/2006	US20060246650 Recessed clamping diode fabrication in trench devices
11/02/2006	US20060246648 Alignment key structure in a semiconductor device and method of forming the same
11/02/2006	US20060246646 MOS device and a process for manufacturing MOS devices using a dual-polysilicon layer technology with side contact
11/02/2006	US20060246645 A MOS Transistor with a Three-Step Source/Drain Implant
11/02/2006	US20060246638 Semiconductor Device and Method of Manufacturing the Same
11/02/2006	US20060246636 Semiconductor device and method of manufacturing the same
11/02/2006	US20060246632 Thin film transistor, thin film transistor subsrate, electronic apparatus and process for producing polycrystalline semiconductor thin film
11/02/2006	US20060246625 Method for fabricating a semiconductor device having a heat radiation layer
11/02/2006	US20060246620 Organic semiconductor device and its manufacturing method
11/02/2006	US20060246605 Methods for Fabricating Reduced Floating Body Effect Static Random Access Memory Cells
11/02/2006	US20060246550 Construction of antibody using mrl/lpr mouse
11/02/2006	US20060245263 Nonvolatile semiconductor memory
11/02/2006	US20060245256 Split gate flash memory cell with ballistic injection
11/02/2006	US20060245245 Non-volatile memory cell using high-k material and inter-gate programming
11/02/2006	US20060244886 Process of surface treatment, surface treating device, surface treated plate, and electro-optic device, and electronic equipment
11/02/2006	US20060244852 Image sensors
11/02/2006	US20060244155 Conductive ball mounting apparatus
11/02/2006	US20060244153 Wiring substrate and radiation detector using the same
11/02/2006	US20060244112 Packaging of electronic chips with air-bridge structures
11/02/2006	US20060244108 Capacitive techniques to reduce noise in high speed interconnections
11/02/2006	US20060244107 Semiconductor device, manufacturing method, and electronic device
11/02/2006	US20060244106 Fin semiconductor device and method for fabricating the same
11/02/2006	US20060244105 Strained semiconductor by full wafer bonding
11/02/2006	US20060244104 Trench gate type insulated gate bipolar transistor
11/02/2006	US20060244102 Semiconductor device including a stacked capacitor
11/02/2006	US20060244101 Semiconductor apparatus and physical quantity sensing apparatus
11/02/2006	US20060244100 Atomic layer deposited zirconium silicon oxide films
11/02/2006	US20060244099 Split-channel antifuse array architecture
11/02/2006	US20060244098 Semiconductor device and method of manufacturing a semiconductor device
11/02/2006	US20060244097 Forming a semiconductor structure in manufacturing a semiconductor device using one or more epitaxial growth processes
11/02/2006	US20060244096 Semiconductor wafer and processing method for same
11/02/2006	US20060244095 Method of forming a shallow trench isolation structure with reduced leakage current in a semiconductor device
11/02/2006	US20060244094 Semiconductor device and method of manufacturing the same
11/02/2006	US20060244093 Sti formation in semiconductor device including soi and bulk silicon regions
11/02/2006	US20060244092 Semiconductor constructions
11/02/2006	US20060244086 Transparent amorphous carbon structure in semiconductor devices
11/02/2006	US20060244085 Method for forming a chamber in an electronic device and device formed thereby
11/02/2006	US20060244084 Semiconductor devices having polymetal gate electrodes and methods of manufacturing the same
11/02/2006	US20060244083 Semiconductor device and method for manufacturing semiconductor device
11/02/2006	US20060244082 Atomic layer desposition of a ruthenium layer to a lanthanide oxide dielectric layer
11/02/2006	US20060244081 Semiconductor device and method of forming the same
11/02/2006	US20060244080 Profile confinement to improve transistor performance
11/02/2006	US20060244079 MOS transistor including multi-work function metal nitride gate electrode, COMS integrated circuit device including same, and related methods of manufacture
11/02/2006	US20060244078 Etching method and etching device
11/02/2006	US20060244077 ASYMMETRIC FIELD EFFECT TRANSISTORS (FETs)
11/02/2006	US20060244076 Semiconductor storage device and method of fabricating the same
11/02/2006	US20060244075 FIELD EFFECT TRANSISTORS (FETs) WITH MULTIPLE AND/OR STAIRCASE SILICIDE
11/02/2006	US20060244074 Hybrid-strained sidewall spacer for CMOS process
11/02/2006	US20060244073 FABRICATION OF AN EEPROM CELL WITH SiGe SOURCE/DRAIN REGIONS
11/02/2006	US20060244072 Device for Electrostatic Discharge Protection and Method of Manufacturing the Same
11/02/2006	US20060244070 Semiconductor storage device and portable electronic equipment
11/02/2006	US20060244066 Contacts to semiconductor fin devices
11/02/2006	US20060244065 Semiconductor device and manufacturing method thereof
11/02/2006	US20060244064 Semiconductor device for limiting leakage current
11/02/2006	US20060244060 Metal-semiconductor contact, semiconductor component, integrated circuit arrangement and method
11/02/2006	US20060244059 Power MOS electronic device and corresponding realizing method
11/02/2006	US20060244058 Electronically scannable multiplexing device
11/02/2006	US20060244057 Multiple oxide thicknesses for merged memory and logic applications
11/02/2006	US20060244056 Semiconductor device
11/02/2006	US20060244055 Transistor structure of memory device and method for fabricating the same
11/02/2006	US20060244053 Trench gate type semiconductor device
11/02/2006	US20060244052 Short-channel schottky-barrier MOSFET device and manufacturing method
11/02/2006	US20060244051 Semiconductor manufacturing method and semiconductor device
11/02/2006	US20060244050 Semiconductor device and method of fabricating the same
11/02/2006	US20060244049 Semiconductor memory device, method for controlling the same, and mobile electronic device
11/02/2006	US20060244048 Method for reducing single bit data loss in a memory circuit
11/02/2006	US20060244047 Memory and logic devices using electronically scannable multiplexing devices
11/02/2006	US20060244046 Non-Volatile Semiconductor Memory Device
11/02/2006	US20060244045 MOS Transistor Gates with Doped Silicide and Methods for Making the Same
11/02/2006	US20060244044 Method for reducing single bit data loss in a memory circuit
11/02/2006	US20060244043 Nonvolatile memory solution using single-poly pFlash technology
11/02/2006	US20060244042 Split gate type nonvolatile memory device and method of fabricating the same
11/02/2006	US20060244041 Programmable nonvolatile memory and semiconductor integrated circuit device
11/02/2006	US20060244040 Semiconductor memory device and manufacturing method thereof
11/02/2006	US20060244039 Metal-poly integrated capacitor structure
11/02/2006	US20060244038 Split gate flash memory cell with ballistic injection
11/02/2006	US20060244037 Semiconductor device and fabrication method thereof
11/02/2006	US20060244036 One time programmable EPROM fabrication in STI CMOS technology
11/02/2006	US20060244035 Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for CMOS
11/02/2006	US20060244034 Low-dielectric films, and manufacturion method thereof, and electronic component using it
11/02/2006	US20060244033 Capacitor, semiconductor device having the same, and method of manufacturing the semiconductor device
11/02/2006	US20060244032 Semiconductor process for removing defects due to edge chips of a semiconductor wafer and semiconductor device fabricated thereby
11/02/2006	US20060244031 Memory cell structure and semiconductor memory device
11/02/2006	US20060244030 Conductive container structures having a dielectric cap
11/02/2006	US20060244029 Double trench for isolation of semiconductor devices
11/02/2006	US20060244028 Conductive niobium oxide gate MOSFET
11/02/2006	US20060244027 MIS capacitor and method of formation
11/02/2006	US20060244026 Semiconductor substrate cleaning
11/02/2006	US20060244025 Semiconductor memory device and method for manufacturing the same
11/02/2006	US20060244024 Memory cell array and method of manufacturing the same
11/02/2006	US20060244023 Ferroelectric memory device and method of manufacturing the same
11/02/2006	US20060244022 Semiconductor device and method of manufacturing the same
11/02/2006	US20060244021 Adiabatic rotational switching memory element including a ferromagnetic decoupling layer
11/02/2006	US20060244019 Semiconductor device and method of fabricating the same
11/02/2006	US20060244018 Semiconductor device and method of manufacture thereof
11/02/2006	US20060244017 Gallium-nitride based light emitting diode structure and fabrication thereof
11/02/2006	US20060244014 Nonvolatile memory device and method of forming same
11/02/2006	US20060244011 Binary group III-nitride based high electron mobility transistors and methods of fabricating same
11/02/2006	US20060244010 Aluminum free group III-nitride based high electron mobility transistors and methods of fabricating same
11/02/2006	US20060244009 High electron mobility transistor (HEMT) structure with refractory gate metal

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