H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2006
11/16/2006	US20060256251 Polycrystalline liquid crystal display device and method of fabricating the same
11/16/2006	US20060256250 Display device manufacturing method and display device
11/16/2006	US20060256059 Integrated displays using nanowire transistors
11/16/2006	US20060256047 Transistor circuit, display panel and electronic apparatus
11/16/2006	US20060256046 Light Emitting Device, Method of Driving a Light Emitting Device, Element Substrate, and Electronic Equipment
11/16/2006	US20060255478 Electronic component comprising a semiconductor chip and a plastic housing, and method for producing the same
11/16/2006	US20060255470 ZrAlxOy DIELECTRIC LAYERS
11/16/2006	US20060255427 Integrated circuit comprising at least one capacitor and process for forming the capacitor
11/16/2006	US20060255426 Semiconductor device with shallow trench isolation and its manufacture method
11/16/2006	US20060255425 Low crosstalk substrate for mixed-signal integrated circuits
11/16/2006	US20060255424 Utilizing a protective plug to maintain the integrity of the FTP shrink hinge
11/16/2006	US20060255423 Silicon carbide junction barrier schottky diodes with supressed minority carrier injection
11/16/2006	US20060255422 Systems and methods for biasing high fill-factor sensor arrays and the like
11/16/2006	US20060255415 Structure and method of making a field effect transistor having an asymmetrically stressed channel region
11/16/2006	US20060255414 Method and apparatus for fabricating a carbon nanotube transistor having unipolar characteristics
11/16/2006	US20060255413 Highly integrated semiconductor device with silicide layer that secures contact margin and method of manufacturing the same
11/16/2006	US20060255412 Enhanced access devices using selective epitaxial silicon over the channel region during the formation of a semiconductor device and systems including same
11/16/2006	US20060255410 FinFET TRANSISTOR AND CIRCUIT
11/16/2006	US20060255405 Fully-depleted SOI MOSFET device and process for fabricating the same
11/16/2006	US20060255404 Semiconductor resistance element and fabrication method thereof
11/16/2006	US20060255403 Compound semiconductor switch circuit device
11/16/2006	US20060255402 Elimination of gate oxide weak spot in deep trench
11/16/2006	US20060255401 Increasing breakdown voltage in semiconductor devices with vertical series capacitive structures
11/16/2006	US20060255400 One-transistor composite-gate memory
11/16/2006	US20060255399 Nonvolatile memory device having a plurality of trapping films
11/16/2006	US20060255398 Ultra-violet protected tamper resistant embedded EEPROM
11/16/2006	US20060255397 Ultra high density flash memory
11/16/2006	US20060255396 Nonvolatile semiconductor memory and manufacturing method for the same
11/16/2006	US20060255395 Switching element
11/16/2006	US20060255394 Flash memory device and method of manufacturing the same
11/16/2006	US20060255393 N well implants to separate blocks in a flash memory device
11/16/2006	US20060255392 Transistor including metal-insulator transition material and method of manufacturing the same
11/16/2006	US20060255391 Method of forming a reliable high performance capacitor using an isotropic etching process
11/16/2006	US20060255390 Semiconductor device and method of manufacturing the same
11/16/2006	US20060255389 Semiconductor device with decoupling capacitor and method of fabricating the same
11/16/2006	US20060255388 Trench capacitors with buried isolation layer and methods for manufacturing the same
11/16/2006	US20060255387 Integrated circuit having laterally dielectrically isolated active regions above an electrically contacted buried material, and method for producing the same
11/16/2006	US20060255386 Method for manufacturing a semiconductor device having a hard mask coupled to a discharge plug
11/16/2006	US20060255385 Memory device of the one-time-programmable type, and programming method for same
11/16/2006	US20060255384 Memory device and method of manufacturing the same
11/16/2006	US20060255383 Spin-Polarization Devices Using Rare Earth-Transition Metal Alloys
11/16/2006	US20060255379 Stable diodes for low and high frequency applications
11/16/2006	US20060255378 Semiconductor device
11/16/2006	US20060255377 Field effect transistor with novel field-plate structure
11/16/2006	US20060255376 Integrated circuit and method for manufacturing an integrated circuit
11/16/2006	US20060255374 Manufacturing process and structure of power junction field effect transistor
11/16/2006	US20060255373 Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure
11/16/2006	US20060255370 Method of manufacturing semiconductor device and semiconductor device
11/16/2006	US20060255369 High-voltage semiconductor device and method of manufacturing the same
11/16/2006	US20060255368 Single electron transistor having memory function and method of manufacturing the same
11/16/2006	US20060255367 Compound semiconductor epitaxial substrate
11/16/2006	US20060255366 Nitride-based transistors with a protective layer and a low-damage recess
11/16/2006	US20060255365 Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
11/16/2006	US20060255364 Heterojunction transistors including energy barriers and related methods
11/16/2006	US20060255361 Temperature measurement device of power semiconductor device
11/16/2006	US20060255360 Semiconductor device having multiple lateral channels and method of forming the same
11/16/2006	US20060255358 Electrode structures for LEDs with increased active area
11/16/2006	US20060255357 Light emitting element mounting frame and light emitting device
11/16/2006	US20060255355 Radiation emitting semiconductor component with luminescent conversion element
11/16/2006	US20060255354 Semiconductor device and method for manufacturing the same
11/16/2006	US20060255350 Semiconductor device and method for fabricating the same
11/16/2006	US20060255344 Field emission device, display adopting the same and method of manufacturing the same
11/16/2006	US20060255339 Single-crystalline gallium nitride substrate
11/16/2006	US20060255338 Thin film transistor and the manufacturing method thereof
11/16/2006	US20060255337 Multi-domain member for a display device
11/16/2006	US20060255335 Method for manufacturing semiconductor element, semiconductor element, and semiconductor device
11/16/2006	US20060255334 Novel organic polymer semiconductor compounds, methods of forming organic polymer semiconductor thin film using the same, and organic thin film transistors using the same
11/16/2006	US20060255333 Method of forming a controlled distribution of nano-particles on a surface
11/16/2006	US20060255331 Strained silicon forming method with reduction of threading dislocation density
11/16/2006	US20060255330 Embedded silicon germanium using a double buried oxide silicon-on-insulator wafer
11/16/2006	US20060255329 Memory cell, memory device and method for the production thereof
11/16/2006	US20060255310 Composite oxide having n-type thermoelectric characteristics
11/16/2006	US20060254910 P channel filed effect transistor and sensor using the same
11/16/2006	US20060254497 Semiconductor thin film decomposing method, decomposed semiconductor thin film, decomposed semiconductor thin film evaluation method, thin film transistor made of decomposed semiconductor thin film, and image display device having circuit constituted of thin film transistors
11/16/2006	DE4320060B4 Verfahren zur Herstellung eines Halbleiterspeicherzellenkondensators A method for fabricating a semiconductor memory cell capacitor
11/16/2006	DE112004002608T5 Leistungshalbleitervorrichtungen und Herstellungsverfahren Power semiconductor devices and manufacturing processes
11/16/2006	DE10321494B4 Herstellungsverfahren für eine Halbleiterstruktur Manufacturing method of a semiconductor structure
11/16/2006	DE102006019950A1 Halbleitervorrichtung mit dielektrischer Trennung und Herstellungsverfahren derselben A semiconductor device with dielectric isolation and production method thereof
11/16/2006	DE102005023026A1 Vertical power transistor with plate capacitor structure for use in, e.g., clocked switch power packages, has edge plate attached at front side between edge and edge connector, and laminated on field plate to form plate capacitor structure
11/16/2006	DE102005022391A1 Semiconductor component, e.g. power metal oxide semiconductor field effect transistor (MOSFET) includes insulator layer formed by laminating oxide layer and oxynitride layer
11/16/2006	DE102005022129A1 Field effect transistor, e.g. complementary MOSFET, for system-on-chip circuit arrangement, has n-well region with doped region between drain and source regions such that region with resistance is formed between channel and doped regions
11/16/2006	DE102005021932A1 Verfahren zur Herstellung integrierter Schaltkreise A process for the production of integrated circuits
11/16/2006	DE102004034397B4 Bildsensormodul mit einem Waferebenenpaket Image sensor module with a wafer-level package
11/15/2006	EP1722423A2 Stable diodes for low and high frequency applications
11/15/2006	EP1722406A1 Plasma processing method and computer storing medium
11/15/2006	EP1722404A2 Low work function metal alloy
11/15/2006	EP1722403A2 Fabrication method for a thin film smiconductor device
11/15/2006	EP1722268A1 Flat panel display and method of manufacturing the same
11/15/2006	EP1721866A1 MEMS device having a trilayered beam and related methods
11/15/2006	EP1721344A2 Method of manufacturing a superjunction device
11/15/2006	EP1721338A2 Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse material
11/15/2006	EP1721337A1 Integrated circuit with a very small-sized reading diode
11/15/2006	EP1721336A2 Twin eeprom memory transistors with subsurface stepped floating gates
11/15/2006	EP1417712B1 Integrated arrays of modulators and lasers on electronics
11/15/2006	EP1234335B1 Method of manufacturing a semiconductor device using a halo implantation
11/15/2006	EP1143618B1 Overcurrent control circuit of power semiconductor device
11/15/2006	EP1114444B1 Semiconductor processing method and gate stack
11/15/2006	CN1864275A Split poly-SiGe/poly-Si alloy gate stack
11/15/2006	CN1864271A Fowler-nordheim block alterable EEPROM memory cell
11/15/2006	CN1864270A Insulated-gate semiconductor device and its manufacturing method

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