H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2006
11/30/2006	US20060267141 Semiconductor device and manufacturing method thereof
11/30/2006	US20060267140 Electrode layer for capacitors, method of manufacturing the electrode layer, unit sensor using the electrode layer, and tactile sensor using the unit sensor
11/30/2006	US20060267139 Method of manufacturing a semiconductor device
11/30/2006	US20060267138 Semiconductor device
11/30/2006	US20060267137 Method and structure to prevent circuit network charging during fabrication of integrated circuits
11/30/2006	US20060267136 Integrated circuit (ic) with on-chip programmable fuses
11/30/2006	US20060267135 Circuit arrangement placed on a substrate and method for producing the same
11/30/2006	US20060267134 Deep trench isolation structures and methods of formation thereof
11/30/2006	US20060267133 Integrated circuit with improved signal noise isolation and method for improving signal noise isolation
11/30/2006	US20060267132 Guard rings with local coupling capacitance
11/30/2006	US20060267131 Isolation trench
11/30/2006	US20060267130 Semiconductor Device Including Shallow Trench Isolation (STI) Regions with a Superlattice Therebetween
11/30/2006	US20060267129 Semiconductor device having rectifying action
11/30/2006	US20060267125 Sensor semiconductor device and method for fabricating the same
11/30/2006	US20060267122 Detector arrangement, method for the detection of electrical charge carriers and use of an ono field effect transistor of r detection of an electrical charge
11/30/2006	US20060267120 Liquid crystal display apparatus and manufacturing method thereof
11/30/2006	US20060267119 Refractory metal-based electrodes for work function setting in semiconductor devices
11/30/2006	US20060267118 Semiconductor device and method of manufacturing the same
11/30/2006	US20060267117 Nickel silicide method and structure
11/30/2006	US20060267116 Semiconductor device and manufacturing of the same
11/30/2006	US20060267115 Semiconductor device and method of manufacturing the same
11/30/2006	US20060267114 Semiconductor device and method for manufacturing the same
11/30/2006	US20060267113 Semiconductor device structure and method therefor
11/30/2006	US20060267112 Semiconductor device and manufacturing method of the same
11/30/2006	US20060267111 Double-gate FETs (Field Effect Transistors)
11/30/2006	US20060267110 Multi-Transistor Layout Capable Of Saving Area
11/30/2006	US20060267109 Semiconductor device using MEMS technology
11/30/2006	US20060267108 Leakage power reduction in CMOS circuits
11/30/2006	US20060267107 Ultra-uniform silicide system in integrated circuit technology
11/30/2006	US20060267106 Novel semiconductor device with improved channel strain effect
11/30/2006	US20060267105 Semiconductor device including insulated gate type transistor and insulated gate type capacitance, and method of manufacturing the same
11/30/2006	US20060267104 Thyristor with integrated resistance and method for producing it
11/30/2006	US20060267103 Semiconductor device, method for fabricating the semiconductor device and method for designing the semiconductor device
11/30/2006	US20060267101 Electrostatic Discharge Protection Networks For Triple Well Semiconductor Devices
11/30/2006	US20060267097 Method for forming a MOS transistor and structure thereof
11/30/2006	US20060267096 Method of designing semiconductor device, semiconductor device and recording medium
11/30/2006	US20060267092 High power semiconductor device capable of preventing parasitical bipolar transistor from turning on
11/30/2006	US20060267091 IGBT or like semiconductor device of high voltage-withstanding capability
11/30/2006	US20060267090 Trenched-gate field effect transistors and methods of forming the same
11/30/2006	US20060267089 Semiconductor device and method of manufacture
11/30/2006	US20060267088 Structure and method for forming a minimum pitch trench-gate FET with heavy body region
11/30/2006	US20060267087 Multi-silicide system in integrated circuit technology
11/30/2006	US20060267086 Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells
11/30/2006	US20060267085 Trech-type vertical semiconductor device having gate electrode buried in rounded hump opening
11/30/2006	US20060267084 Semiconductor memory device
11/30/2006	US20060267083 Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step
11/30/2006	US20060267082 Semiconductor memory component
11/30/2006	US20060267080 Non-volatile memory and method of controlling the same
11/30/2006	US20060267079 Memory array including isolation between memory cell and dummy cell portions
11/30/2006	US20060267078 Charge-trapping memory device
11/30/2006	US20060267077 Semiconductor memory element, semiconductor memory device and method of fabricating the same
11/30/2006	US20060267076 Non-volatile semiconductor memory device
11/30/2006	US20060267075 Multi-state memory cell
11/30/2006	US20060267074 Method for fabricating semiconductor device and semiconductor device
11/30/2006	US20060267073 Semiconductor memory cell and semiconductor memory device
11/30/2006	US20060267072 Scalable high density non-volatile memory cells in a contactless memory array
11/30/2006	US20060267071 Low-cost, low-voltage single-layer polycrystalline EEPROM memory cell integration into BiCMOS technology
11/30/2006	US20060267070 Gate coupling in floating-gate memory cells
11/30/2006	US20060267069 Nonvolatile semiconductor memory
11/30/2006	US20060267068 Semiconductor device and method for manufacturing semiconductor device
11/30/2006	US20060267067 Semiconductor memory device and method of manufacturing the same
11/30/2006	US20060267066 High dielectric constant transition metal oxide materials
11/30/2006	US20060267065 Semiconductor device using a conductive film and method of manufacturing the same
11/30/2006	US20060267064 Semiconductor memory device
11/30/2006	US20060267063 Catheter grip
11/30/2006	US20060267062 Double sided container process used during the manufacture of a semiconductor device
11/30/2006	US20060267061 Mosfet having channel in bulk semiconductor and source/drain on insulator, and method of fabrication
11/30/2006	US20060267060 Semiconductor memory device and method for fabricating the same
11/30/2006	US20060267059 Peripheral circuit architecture for array memory
11/30/2006	US20060267058 Magnetic storage element storing data by magnetoresistive effect
11/30/2006	US20060267057 Ferroelectric memory device and manufacturing method thereof
11/30/2006	US20060267056 Magnetic random access memory with stacked toggle memory cells having oppositely-directed easy-axis biasing
11/30/2006	US20060267051 Metal oxide sensors and method of forming
11/30/2006	US20060267050 Method for driving active display
11/30/2006	US20060267045 Negative resistance field-effect element
11/30/2006	US20060267044 DMOS transistor with a poly-filled deep trench for improved performance
11/30/2006	US20060267041 High-brightness light-emitting diode
11/30/2006	US20060267028 LED luminaire
11/30/2006	US20060267021 Power devices and methods of manufacture
11/30/2006	US20060267020 Method of manufacturing a semiconductor device utilizing melt recrystallization of a semiconductor layer
11/30/2006	US20060267018 Thin film circuit
11/30/2006	US20060267017 Semi-conductor-on-insulator structure, semiconductor devices using the same and method of manufacturing the same
11/30/2006	US20060267015 Thin film transistor, production method thereof and liquid crystal display device
11/30/2006	US20060267014 Signal line for display device and thin film transistor array panel including the signal line
11/30/2006	US20060267013 Pixel sensor having doped isolation structure sidewall
11/30/2006	US20060267012 Thin-film transistor and method of fabricating the same
11/30/2006	US20060267007 Devices incorporating heavily defected semiconductor layers
11/30/2006	US20060267006 Electrode substrate, thin film transistor, display device and their production
11/30/2006	US20060267005 Transistor, circuit board, display and electronic equipment
11/30/2006	US20060267003 Organic thin film transistor (OTFT), its method of fabrication, and flat panel display including OTFT
11/30/2006	US20060267002 Organic thin film transistor, flat panel display apparatus having the same, method of producing the organic thin film transistor and shadow mask used in the method
11/30/2006	US20060267001 Emission layer and organic light emitting diode using the same
11/30/2006	US20060267000 Containing a benzene ring bonded to at least two acetylenic groups and an optionally fused cyclopentadienone, (dioxo)thiophene, pyridazine, or pyranone ring, e.g., 4-(3,5-bis(Phenylethynyl)phenyl)-2,3,5-triphenylcyclopentadienone; low dielectric constant insulating layers in microelectronic devices
11/30/2006	US20060266999 Interconnectable nanoscale computational stages
11/30/2006	US20060266995 Transistor structures and transistors with a germanium-containing channels
11/30/2006	US20060266994 Electron emission device
11/30/2006	US20060266990 Lateral phase change memory and method therefor
11/30/2006	DE19925880B4 Avalanchefeste MOS-Transistorstruktur Avalanche Solid MOS transistor structure
11/30/2006	DE19810579B4 Integrierte Halbleiterschaltungsvorrichtung A semiconductor integrated circuit device
11/30/2006	DE112004002401T5 Herstellung abrupter Übergänge in Bauelementen unter Anwendung des Dotierstoffschneepflugeffektes beim Silizidwachstum Producing abrupt transitions in devices using the Dotierstoffschneepflugeffektes the Silizidwachstum

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