H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2006
12/19/2006	US7151301 Sensitivity enhanced biomolecule field effect transistor
12/19/2006	US7151299 Semiconductor device and its manufacturing method
12/19/2006	US7151297 Insulated gate semiconductor device
12/19/2006	US7151296 High voltage lateral diffused MOSFET device
12/19/2006	US7151295 Non-volatile semiconductor memory device and process of manufacturing the same
12/19/2006	US7151294 High density stepped, non-planar flash memory
12/19/2006	US7151293 SONOS memory with inversion bit-lines
12/19/2006	US7151292 Dielectric memory cell structure with counter doped channel region
12/19/2006	US7151290 Semiconductor memory device and method of manufacturing the same
12/19/2006	US7151289 Ferroelectric capacitor and semiconductor device having a ferroelectric capacitor
12/19/2006	US7151288 Semiconductor device and method of manufacturing the same
12/19/2006	US7151284 Structures for light emitting devices with integrated multilayer mirrors
12/19/2006	US7151281 Light-emitting diode structure with electrostatic discharge protection
12/19/2006	US7151280 Semiconductor device
12/19/2006	US7151279 Thin film transistor array panel and manufacturing method thereof
12/19/2006	US7151278 Pulse output circuit, shift register, and display device
12/19/2006	US7151277 Selective etching of silicon carbide films
12/19/2006	US7151275 Reducing the contact resistance in organic field-effect transistors with palladium contacts by using nitriles and isonitriles
12/19/2006	US7151274 Dual panel type organic electroluminescent device
12/19/2006	US7151273 Silver-selenide/chalcogenide glass stack for resistance variable memory
12/19/2006	US7151059 MOS transistor and method of manufacture
12/19/2006	US7151055 Technique for forming a gate electrode by using a hard mask
12/19/2006	US7151054 Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
12/19/2006	US7151047 Stable, water-soluble quantum dot, method of preparation and conjugates thereof
12/19/2006	US7151046 Semiconductor thin film decomposing method, decomposed semiconductor thin film, decomposed semiconductor thin film evaluation method, thin film transistor made of decomposed semiconductor thin film, and image display device having circuit constituted of thin film transistors
12/19/2006	US7151044 Thin film transistor type display device, method of manufacturing thin film element, thin film transistor circuit board, electro-optical device, and electronic apparatus
12/19/2006	US7151038 Semiconductor device having an integral resistance element
12/19/2006	US7151037 Processes of forming stacked resistor constructions
12/19/2006	US7151035 Semiconductor device and manufacturing method thereof
12/19/2006	US7151033 Method for manufacturing a semiconductor device having a low junction leakage current
12/19/2006	US7151032 Methods of fabricating semiconductor devices
12/19/2006	US7151030 Horizontal memory devices with vertical gates
12/19/2006	US7151029 Memory device and method of making the same
12/19/2006	US7151023 Metal gate MOSFET by full semiconductor metal alloy conversion
12/19/2006	US7151021 Bi-directional read/program non-volatile floating gate memory cell and array thereof, and method of formation
12/19/2006	US7151019 Method of manufacturing a semiconductor device with different lattice properties
12/19/2006	US7151016 Method of manufacturing a semiconductor device that includes a hydrogen concentration depth profile
12/19/2006	US7151015 Semiconductor device and manufacturing method thereof
12/19/2006	US7151001 Fabrication method of self-aligned ferroelectric gate transistor using buffer layer of high etching selectivity
12/19/2006	US7150910 Nanocrystal structures
12/14/2006	WO2006132711A1 Methods for manufacturing integrated circuits
12/14/2006	WO2006132704A2 High voltage igbt semiconductor device and method of manufacture
12/14/2006	WO2006132659A2 Nanowire heterostructures
12/14/2006	WO2006132439A1 Thin film transistor having channel comprising zinc oxide and manufacturing method thereof
12/14/2006	WO2006132419A1 Field effect transistor
12/14/2006	WO2006132418A1 Field effect transistor
12/14/2006	WO2006132284A1 Trench-type mosfet and method for manufacturing same
12/14/2006	WO2006132269A1 Trench mosfet and method for manufacturing same
12/14/2006	WO2006132172A1 Fin type field effect transistor, semiconductor device and production method thereof
12/14/2006	WO2006132158A1 Nonvolatile semiconductor storage device and method for manufacturing same
12/14/2006	WO2006132050A1 Method for producing zinc oxide-protein complex
12/14/2006	WO2006131615A1 Channel transistor based on germanium encased by a gate electrode and method for producing this transistor
12/14/2006	WO2006131251A1 Mixture for doping semiconductors
12/14/2006	WO2006107564A3 Semiconductor power deviceand corrisponding manufacturing process
12/14/2006	WO2006107404A3 Semiconductor devices having improved field plates
12/14/2006	WO2006101769A3 Method of fabrication of ai/ge bonding in a wafer packaging environment and a product produced therefrom
12/14/2006	WO2006094241A3 Thin-film device comprising an oxide semiconductor and method of selective annealing a blanket coated oxide semiconductor layer
12/14/2006	WO2006091250A3 Joining of dissimilar materials
12/14/2006	WO2006083546A3 In situ formed halo region in a transistor device
12/14/2006	WO2006036447A3 A compact scr device and method for integrated circuits
12/14/2006	WO2006026055A3 Mos varactor using isolation well
12/14/2006	WO2005089484A3 Integrated circuit metal silicide method
12/14/2006	WO2005067683A8 Inorganic nanowires
12/14/2006	WO2005067524A3 Nanocrystal doped matrixes
12/14/2006	US20060281332 Structure for a semiconductor arrangement and a method of manufacturing a semiconductor arrangement
12/14/2006	US20060281319 Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor device
12/14/2006	US20060281318 Method of Manufacturing Semiconductor Device
12/14/2006	US20060281317 A first conductive layer of a high-melting point metal is in contact with an insulating layer by droplet discharge; a second conductive layer of silver, gold, copper, or indium tin oxide in contact with the first conductive layer,has improved adhesiveness with the insulating layer; antipeeling agents
12/14/2006	US20060281316 Semiconductor device and method of manufacturing the same
12/14/2006	US20060281304 Semiconductor device and method of manufacturing the same
12/14/2006	US20060281283 Silicon epitaxial wafer, and silicon epitaxial wafer manufacturing method
12/14/2006	US20060281279 Structure and method for III-nitride monolithic power IC
12/14/2006	US20060281273 Semiconductor device and manufacturing method of the semiconductor device
12/14/2006	US20060281265 Selective nitridation of gate oxides
12/14/2006	US20060281264 Semiconductor device and method for fabricating the same
12/14/2006	US20060281262 Integrated semiconductor nonvolatile storage device
12/14/2006	US20060281259 Semiconductor device and method of fabricating the same
12/14/2006	US20060281258 Magnetic tunnel junction device and writing/reading method for said device
12/14/2006	US20060281252 Metal interconnect for capacitor
12/14/2006	US20060281247 Non-volitale semiconductor memory
12/14/2006	US20060281244 Nonvolatile semiconductor memory device and method of manufacturing the same
12/14/2006	US20060281242 Semiconductor device and fabrication method therefor
12/14/2006	US20060281236 Method and apparatus for improving stability of a 6T CMOS SRAM cell
12/14/2006	US20060281235 Process for fabricating a thin film semiconductor device, thin film semiconductor device, and liquid crystal display
12/14/2006	US20060281215 Solid-state imaging device and method for manufacturing the same
12/14/2006	US20060281213 Actuator Coupling System and a Pipetting Module Comprising Such a Coupling System
12/14/2006	US20060281121 Computing with biomolecules
12/14/2006	US20060279682 Liquid crystal display and thin film transistor panel therefor
12/14/2006	US20060279503 Thin-film transistor circuit and a semiconductor display using the same
12/14/2006	US20060279447 Analog/digital converting device
12/14/2006	US20060279000 Pre-solder structure on semiconductor package substrate and method for fabricating the same
12/14/2006	US20060278960 Y branch circuit and method for manufacturing the same
12/14/2006	US20060278955 Optoelectronic system and method for its manufacture
12/14/2006	US20060278953 Semiconductor memory device
12/14/2006	US20060278952 Semiconductor device and fabrication process thereof
12/14/2006	US20060278950 Semiconductor device having first and second insulation separation regions
12/14/2006	US20060278942 Antistiction MEMS substrate and method of manufacture
12/14/2006	US20060278941 Semiconductor device with a high-k gate dielectric and a metal gate electrode
12/14/2006	US20060278940 Semiconductor device and manufacturing method thereof
12/14/2006	US20060278939 PMOS depletable drain extension made from NMOS dual depletable drain extensions

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