H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2006
12/05/2006	US7144775 Low-voltage single-layer polysilicon eeprom memory cell
12/05/2006	US7144771 Methods of forming electronic devices including dielectric layers with different densities of titanium
12/05/2006	US7144770 Memory cell and method for fabricating it
12/05/2006	US7144766 Method of manufacturing semiconductor integrated circuit device having polymetal gate electrode
12/05/2006	US7144765 Semiconductor device with Schottky electrode including lanthanum and boron, and manufacturing method thereof
12/05/2006	US7144764 Method of manufacturing semiconductor device having trench isolation
12/05/2006	US7144754 Device having resin package and method of producing the same
12/05/2006	US7143651 Pressure sensor
12/03/2006	CA2548705A1 Outside plant cable pair protector
11/2006
11/30/2006	WO2006128102A2 Self-repair and enhancement of nanostructures by liquification under guiding conditions
11/30/2006	WO2006127914A2 Trench-gate field effect transistors and methods of forming the same
11/30/2006	WO2006127846A2 Nickel silicide method and structure
11/30/2006	WO2006127696A2 Process for fabricating an integrated circuit package
11/30/2006	WO2006127589A1 Nanoparticles in a flash memory using chaperonin proteins
11/30/2006	WO2006127465A1 Integration process for fabricating stressed transistor structure
11/30/2006	WO2006127291A2 Method for making a semiconductor device including a superlattice having at least one group of substantially undoped layers
11/30/2006	WO2006127269A2 Semiconductor device including a superlattice having at least one group of substantially undoped layer
11/30/2006	WO2006127227A2 Gallium nitride based structures including substrates and manufacturing methods thereof
11/30/2006	WO2006127225A2 Semiconductor device comprising a superlattice dielectric interface layer
11/30/2006	WO2006127215A1 Method for making a semiconductor device comprising a superlattice dielectric interface layer
11/30/2006	WO2006127200A1 Low-cost, low-voltage single-layer polycrystalline epprom memory cell integration into bicmos technology
11/30/2006	WO2006127093A2 Methods of fabricating silicon carbide devices having a smooth surface of the channel regions
11/30/2006	WO2006127047A2 High current electrical switch and method
11/30/2006	WO2006126998A1 Trench metal oxide semiconductor field effect transistor
11/30/2006	WO2006126728A1 Semiconductor device
11/30/2006	WO2006126726A1 Semiconductor device and method for manufacturing same
11/30/2006	WO2006126460A1 Active matrix substrate, display device, and pixel defect correcting method
11/30/2006	WO2006126423A1 Thin film transistor substrate, liquid crystal display device provided with such thin film transistor substrate and method for manufacturing thin film transistor substrate
11/30/2006	WO2006126363A1 Electrode for organic transistor, organic transistor, and semiconductor device
11/30/2006	WO2006126323A1 Semiconductor device, method for manufacturing such semiconductor device, and liquid crystal display device
11/30/2006	WO2006126319A1 High-electron-mobility transistor, field-effect transistor, epitaxial substrate, method for manufacturing epitaxial substrate, and method for manufacturing group iii nitride transistor
11/30/2006	WO2006126253A1 Gyroscope
11/30/2006	WO2006126164A2 Edge termination for semiconductor device
11/30/2006	WO2006125330A1 Cathode cell design
11/30/2006	WO2006125313A1 Method for preparing nanocrystalline silicon in sio2 and freestanding silicon nanoparticles
11/30/2006	WO2006125272A1 Resonant defect enhancement of current transport in semiconducting superlattices
11/30/2006	WO2006094040A3 A method for pattern metalization of substrates
11/30/2006	WO2006081304A3 Boron-doped diamond semiconductor
11/30/2006	WO2006057645A3 Enhancement of electron and hole mobilities in 110 under biaxial compressive strain
11/30/2006	WO2006033923A3 Enhanced resurf hvpmos device with stacked hetero-doping rim and gradual drift region
11/30/2006	WO2005104240A8 Magneto-electric field effect transistor for spintronic applications
11/30/2006	US20060271897 Semiconductor device
11/30/2006	US20060271896 Semiconductor device
11/30/2006	US20060270249 Semiconductor device and method of fabricating the same
11/30/2006	US20060270236 Semiconductor device and manufacturing method thereof
11/30/2006	US20060270227 Hillock reduction in copper films
11/30/2006	US20060270205 Methods of fabricating a semiconductor device having a metal gate pattern
11/30/2006	US20060270204 Methods of fabricating a semiconductor device having a metal gate pattern
11/30/2006	US20060270198 Polycrystalline silicon film containing Ni
11/30/2006	US20060270197 Compound semiconductor material and method for forming an active layer of a thin film transistor device
11/30/2006	US20060270193 Semiconductor substrate, method for fabricating the same, and method for fabricating semiconductor device
11/30/2006	US20060270192 Semiconductor substrate and device with deuterated buried layer
11/30/2006	US20060270186 Semiconductor device having plural bird's beaks of different sizes and manufacturing method thereof
11/30/2006	US20060270183 Isolation structure and method of forming the same
11/30/2006	US20060270182 Manufacturing process of semiconductor device and semiconductor device
11/30/2006	US20060270180 Methods of Forming Phase-Changeable Memory Devices
11/30/2006	US20060270171 MOS transistor device structure combining Si-trench and field plate structures for high voltage device
11/30/2006	US20060270168 End of range (eor) secondary defect engineering using chemical vapor deposition (cvd) substitutional carbon doping
11/30/2006	US20060270165 Multi-layered spacer for lightly-doped drain MOSFETS
11/30/2006	US20060270162 High voltage metal-oxide-semiconductor transistor devices and method of making the same
11/30/2006	US20060270160 Vertical transistor with horizontal gate layers
11/30/2006	US20060270158 Non-volatile memory and method of manufacturing floating gate
11/30/2006	US20060270156 Non-volatile memory devices and methods of forming the same
11/30/2006	US20060270155 Semiconductor device having diffusion barrier layer containing chrome and method for fabricating the same
11/30/2006	US20060270154 Semiconductor device having cell transistor with recess channel structure and method of manufacturing the same
11/30/2006	US20060270146 Contact structure for a stack DRAM storage capacitor
11/30/2006	US20060270145 Capacitive array
11/30/2006	US20060270144 Memory cells with vertical transistor and capacitor and fabrication methods thereof
11/30/2006	US20060270139 Methods for Transistor Formation Using Selective Gate Implantation
11/30/2006	US20060270138 Transistors having a recessed channel region and methods of fabricating the same
11/30/2006	US20060270136 High performance strained cmos devices
11/30/2006	US20060270134 High-voltage metal-oxide-semiconductor devices and method of making the same
11/30/2006	US20060270130 Semiconductor device and method for manufacturing the same
11/30/2006	US20060270128 Method of manufacturing semiconductor device
11/30/2006	US20060270127 Method of forming dual gate variable VT device
11/30/2006	US20060270126 Semiconductor device and method of manufacturing the same
11/30/2006	US20060270123 Semiconductor device and method of manufacturing the same
11/30/2006	US20060270120 IT-CCD and manufacturing method thereof
11/30/2006	US20060270101 Patterned functionalized silicon surfaces
11/30/2006	US20060270100 Low temperature melt-processing of organic-inorganic hybrid
11/30/2006	US20060270095 Substrate, electronic component, and manufacturing method of these
11/30/2006	US20060270090 Electrostatic discharge protection of thin-film resonators
11/30/2006	US20060270088 Micromechanical component and method for production thereof
11/30/2006	US20060270086 Carrier confinement in light-emitting group IV semiconductor devices
11/30/2006	US20060270082 Method of forming film pattern, active matrix substrate, electro-optic device, and electronic apparatus
11/30/2006	US20060270079 Method and circuit structure employing a photo-imaged solder mask
11/30/2006	US20060268647 Semiconductor device
11/30/2006	US20060268608 Data storage system
11/30/2006	US20060268584 Electronic circuit control element with tap element
11/30/2006	US20060268212 TFT active marix liquid crystal display devices
11/30/2006	US20060267887 Active matrix substrate, electro-optical device, and electronic device
11/30/2006	US20060267211 Manufacturing method of composite sheet material using ultrafast laser pulses
11/30/2006	US20060267160 Electro-optical device, method of manufacturing the same, and electronic apparatus
11/30/2006	US20060267152 Strained Si/SiGe/SOI islands and processes of making same
11/30/2006	US20060267151 Light-emitting group IV semiconductor devices
11/30/2006	US20060267150 Metal-insulator varactor devices
11/30/2006	US20060267149 Bipolar junction transistors and method of manufacturing the same
11/30/2006	US20060267148 Solid-state high power device and method
11/30/2006	US20060267144 Trench type buried on-chip precision programmable resistor
11/30/2006	US20060267143 Semiconductor integrated circuit device and manufacturing method thereof

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