H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2006
12/28/2006	US20060289905 Semiconductor device
12/28/2006	US20060289904 Semiconductor device and method of manufacturing the same
12/28/2006	US20060289903 Method of forming metal/high-k gate stacks with high mobility
12/28/2006	US20060289902 Method for forming raised structures by controlled selective epitaxial growth of facet using spacer
12/28/2006	US20060289901 Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
12/28/2006	US20060289894 Semiconductor device
12/28/2006	US20060289893 Display device and driving apparatus having reduced pixel electrode discharge time upon power cut-off
12/28/2006	US20060289889 Display device and manufacturing method thereof
12/28/2006	US20060289874 Silicon carbide devices with hybrid well regions
12/28/2006	US20060289872 Wiring substrate, electronic device, electro-optical device, and electronic apparatus
12/28/2006	US20060289871 Thin film transistor substrate and method of manufacturing the same
12/28/2006	US20060289870 Thin film transistor substrate and production method thereof
12/28/2006	US20060289869 Semi-transparent TFT array substrate, and semi-transparent liquid crystal display
12/28/2006	US20060289868 Flat panel display and method for driving the same
12/28/2006	US20060289867 Liquid crystal display device capable of reducing leakage current, and fabrication method thereof
12/28/2006	US20060289866 Electro-optic display and manufacturing method thereof
12/28/2006	US20060289865 Method of manufacturing a semiconductor device
12/28/2006	US20060289864 High impedance antifuse
12/28/2006	US20060289860 Semiconductor layer
12/28/2006	US20060289859 Method for forming a stacked structure of an insulating layer and an organic semiconductor layer, organic field effect transistor and method for making same
12/28/2006	US20060289857 Organic light emitting display capable of showing images on double sides thereof
12/28/2006	US20060289856 Semiconductor device and production method thereof
12/28/2006	US20060289855 Quantum dot based optoelectronic device and method of making same
12/28/2006	US20060289850 Phase change memory and phase change recording medium
12/28/2006	US20060289849 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
12/28/2006	US20060289848 Reducing oxidation of phase change memory electrodes
12/28/2006	US20060289847 Reducing the time to program a phase change memory to the set state
12/28/2006	US20060288937 Laser assisted material deposition
12/28/2006	DE112004002634T5 Prozess für eine flache Grabenisolation und Struktur Process for a flat grave isolation and structure
12/28/2006	DE10393853T5 Trench-MIS-Bauteil mit einem implantierten Drain-Drift-Bereich und einem dicken Bodenoxid und Verfahren zur Herstellung desselben Of the same trench MIS device having an implanted drain-drift region and a thick bottom oxide and A process for preparing
12/28/2006	DE10393852T5 Trench-MOSFET mit implantiertem Drain-Drift-Bereich und Verfahren zur Herstellung desselben Of the same trench MOSFET with implanted drain-drift region and methods for preparing
12/28/2006	DE10308888B4 Anordnung von Kondensatoren zur Erhöhung der Speicherkapazität in einem Halbleitersubstrat und Verfahren zur Herstellung einer Anordnung Array of capacitors to increase the memory capacity in a semiconductor substrate and process for manufacturing an arrangement
12/28/2006	DE102006025342A1 Halbleitervorrichtung mit isoliertem Gate und Herstellungsverfahren dafür A semiconductor device comprising insulated gate and production method thereof
12/28/2006	DE102005051573A1 Electronic device with metal-insulator-metal (MIM) or metal-insulator-semiconductor (MIS) structure, has layer of succession of MIM or MIS materials that includes insulator layer containing or consisting of praseodymium titanate
12/28/2006	DE102005028919A1 Verfahren zum Herstellen eines elektronischen Bauelementes und elektronisches Bauelement A method of manufacturing an electronic component and electronic component
12/28/2006	DE102005028905A1 Transistor component for complementary MOS logic circuit, has substrate connecting contact arranged in substrate connecting region for conductively connecting substrate connecting region to supply voltage lead
12/28/2006	DE102005028224A1 Trench transistor, e.g. magnetoresistive transistor, for e.g. memory chip, has mesa region between marginal trenches, and marginal electrode structure set to potential lying between drain and source potentials, or to source potential
12/28/2006	DE102005027456A1 Photodiode mit verringertem Dunkelstrom und Verfahren zur Herstellung Photodiode having a reduced dark current and processes for preparing
12/28/2006	DE102005027447A1 Increasing edge blocking capability of power semiconductor element involves providing with semiconductor body, which exhibits volume range and adjacent boundary region thereon in lateral direction
12/28/2006	DE102004025082B4 Elektrisch und durch Strahlung zündbarer Thyristor und Verfahren zu dessen Kontaktierung And electrically ignitable thyristor by radiation and method of contacting
12/28/2006	CA2585736A1 Asymetric layout structures for transistors and methods of fabricating the same
12/27/2006	EP1737046A1 Light emitting display and thin film transistor
12/27/2006	EP1737045A1 Substrate with organic thin film, transistor using same, and methods for producing those
12/27/2006	EP1737044A1 Amorphous oxide and thin film transistor
12/27/2006	EP1737043A2 Insulated gate-type semiconductor device and manufacturing method of the same
12/27/2006	EP1737042A1 Voltage-controlled semiconductor device
12/27/2006	EP1737041A1 Parameter adjuster
12/27/2006	EP1737040A1 Solid-state image sensing device and its driving method
12/27/2006	EP1737033A1 Nonvolatile semiconductor storage element having high charge holding characteristics and method for fabricating the same
12/27/2006	EP1737028A2 Field effect transistor and method of manufacturing a field effect transistor
12/27/2006	EP1736760A2 Nanosensors
12/27/2006	EP1736476A1 Novel compound and organic electronic device using such compound
12/27/2006	EP1736352A1 Hydraulically operated automobile
12/27/2006	EP1735844A1 Micro-reflectors on a substrate for high-density led array
12/27/2006	EP1735839A2 Field-effect device having a metal-insulator-semiconductor high-voltage structure and method of making the same
12/27/2006	EP1735838A2 Optical devices featuring textured semiconductor layers
12/27/2006	EP1735837A2 Method of separating layers of material
12/27/2006	EP1735836A2 Qwip with electron launcher for reducing dielectric relaxation effect in low background conditions
12/27/2006	EP1661158B1 Device threshold control of front-gate silicon-on-insulator mosfet using a self-aligned back-gate
12/27/2006	EP1434978B1 Micromechanical component (on pressure sensor membrane) comprising a bellows-type structure for temperature shifts
12/27/2006	EP1114461B1 Semiconductor circuit
12/27/2006	CN2852196Y LCD and its substrate
12/27/2006	CN2852189Y 液晶显示模组 LCD Module
12/27/2006	CN2852184Y Plane display device
12/27/2006	CN1886839A High voltage and low on-resistance LDMOS transistor having equalized capacitance
12/27/2006	CN1886838A Formation of abrupt junctions in devices by using silicide growth dopant snowplow effect
12/27/2006	CN1886837A Trench insulated gate field effect transistor
12/27/2006	CN1886836A Trench insulated gate field effect transistor
12/27/2006	CN1886835A Trench insulated gate field effect transistor
12/27/2006	CN1886827A Highly efficient gallium nitride based light emitting diodes via surface roughening
12/27/2006	CN1886826A Dynamic Schottky barrier MOSFET device and method of manufacture
12/27/2006	CN1886770A Thin film transistor integrated circuit device, active matrix display device, and manufacturing method of the same
12/27/2006	CN1885584A Pressure perceptive type non-contact switch
12/27/2006	CN1885565A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
12/27/2006	CN1885564A Thermal dissipation structures for FinFETs and manufacturing method thereof
12/27/2006	CN1885563A Dual gate transistor
12/27/2006	CN1885562A Field effect transistor and making method thereof
12/27/2006	CN1885561A Insulated gate semiconductor device, protection circuit and their manufacturing method
12/27/2006	CN1885560A Method to control flatband/threshold voltage in high-k metal gated stacks and structures thereof
12/27/2006	CN1885559A Semiconductor device and method for forming the same
12/27/2006	CN1885558A 半导体装置 Semiconductor device
12/27/2006	CN1885557A Semiconductor element and method for forming semiconductor element
12/27/2006	CN1885556A Semiconductor device and production method thereof
12/27/2006	CN1885555A Hetero-junction bipolar transistor and manufacturing method thereof
12/27/2006	CN1885554A Method for manufacturing electronic component and electronic component
12/27/2006	CN1885552A Light emission display device and thin film transistor
12/27/2006	CN1885546A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/27/2006	CN1885512A Thin film transistor and method for manufacturing the same
12/27/2006	CN1885511A Thin film transistor substrate and method of manufacturing the same
12/27/2006	CN1885509A Fabricating method for thin film transistor substrate and thin film transistor substrate using the same
12/27/2006	CN1885507A Method of producing a semiconductor device
12/27/2006	CN1885140A Liquid crystal display device and method of manufacturing the same
12/27/2006	CN1885139A Thin film transistor display making method
12/27/2006	CN1885109A Liquid crystal display panel cutting system and method and liquid crystal display device fabricating method using the same
12/27/2006	CN1885099A Double mode driven transmissive and reflective liquid crystal display device
12/27/2006	CN1884038A Semiconductor composite device and method of manufacturing the same
12/27/2006	CN1292496C Pattern formation of device
12/27/2006	CN1292489C Semiconductor device and manufacturing method thereof
12/27/2006	CN1292488C Transistor device and producing method thereof
12/27/2006	CN1292487C Organic LED device and mfg. method thereof

1 ... 1153 1154 1155 1156 1157 1158 1159 1160 1161 1162 1163 1164 1165 1166 1167 1168 1169 1170 1171 1172 1173 ... 2182