H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2006
12/28/2006	WO2006137146A1 Field effect transistor and fabrication method thereof
12/28/2006	WO2006136979A2 Semiconductor device with high breakdown voltage and manufacturing method
12/28/2006	WO2006096813A3 Low k dielectric cvd film formation process with in-situ imbedded nanolayers to improve mechanical properties
12/28/2006	WO2006076044A3 Nanostructure-based transistor
12/28/2006	WO2005112123A3 Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
12/28/2006	WO2005104743A3 Adaptive gate drive for switching devices of inverter
12/28/2006	WO2005101516A3 Sequentially charged nanocrystal light emitting device
12/28/2006	US20060292879 Method for peeling off semiconductor element and method for manufacturing semiconductor device
12/28/2006	US20060292846 Material management in substrate processing
12/28/2006	US20060292842 Self-aligned gate and method
12/28/2006	US20060292839 Contacts fabric using heterostructure of metal/semiconductor nanorods and fabrication method thereof
12/28/2006	US20060292835 Element fabrication substrate
12/28/2006	US20060292824 Methods for bonding and micro-electronic devices produced according to such methods
12/28/2006	US20060292820 Isolation layers for semiconductor devices including first and second sub-trenches and methods of forming the same
12/28/2006	US20060292819 Semiconductor device and method for fabricating a semiconductor device
12/28/2006	US20060292816 Semiconductor device and method for fabricating the same
12/28/2006	US20060292812 Integrated circuit devices including insulating support layers and related methods and structures
12/28/2006	US20060292805 Semiconductor device
12/28/2006	US20060292802 Semiconductor Device and Method for Forming the Same
12/28/2006	US20060292799 Memory embedded semiconductor device and method for fabricating the same
12/28/2006	US20060292798 Flash memory device and method for manufacturing the same
12/28/2006	US20060292792 Method for the manufacture of a non-volatile memory device and memory device thus obtained
12/28/2006	US20060292790 Dual work function gate electrodes using doped polysilicon and a metal silicon germanium compound
12/28/2006	US20060292789 Structure and method for collar self-aligned to buried plate
12/28/2006	US20060292787 Semiconductor processing methods, and semiconductor constructions
12/28/2006	US20060292786 Semiconductor constructions, and methods of forming semiconductor constructions
12/28/2006	US20060292783 CMOS transistor and method of manufacturing the same
12/28/2006	US20060292781 Finfets, nonvolatile memory devices including finfets, and methods of forming the same
12/28/2006	US20060292780 Field-effect transistor and method for producing a field-effect transistor
12/28/2006	US20060292767 Storage devices formed on partially isolated semiconductor substrate islands
12/28/2006	US20060292766 Storage devices formed on partially isolated semiconductor substrate islands
12/28/2006	US20060292764 Method of manufacturing a vertical MOS transistor
12/28/2006	US20060292761 Method for fabricating semiconductor device
12/28/2006	US20060292760 Method of fabricating a thin film transistor for an array panel
12/28/2006	US20060292755 Tunable antifuse element and method of manufacture
12/28/2006	US20060292754 Antifuse element and method of manufacture
12/28/2006	US20060292746 Stacked die in die BGA package
12/28/2006	US20060292745 Stacked die in die BGA package
12/28/2006	US20060292744 Three dimensional device integration method and integrated device
12/28/2006	US20060292743 Stacked die in die BGA package
12/28/2006	US20060292732 Methods of flip-chip image sensor package fabrication
12/28/2006	US20060292729 Semiconductor device and manufacturing method thereof
12/28/2006	US20060292704 Magnetostactic wave device based on thin metal films, method for making same and application to devices for processing microwave signals
12/28/2006	US20060291135 Micro-electro-mechanical system (MEMS) variable capacitor apparatuses, systems and related methods
12/28/2006	US20060291134 Micro-electro-mechanical system (MEMS) variable capacitor apparatuses, systems and related methods
12/28/2006	US20060290799 CCD type solid-state imaging apparatus and manufacturing method for the same
12/28/2006	US20060290689 Semiconductor half-bridge module with low inductance
12/28/2006	US20060290431 Semiconductor device
12/28/2006	US20060290380 Semiconductor Device
12/28/2006	US20060289969 Laser assisted material deposition
12/28/2006	US20060289968 Conductive interconnect structures and formation methods using supercritical fluids
12/28/2006	US20060289967 Through-wafer vias and surface metallization for coupling thereto
12/28/2006	US20060289965 Thin film transistor array panel and manufacturing method thereof
12/28/2006	US20060289964 Spacecraft regulation unit with decentralized bus capacitance
12/28/2006	US20060289963 Compound semiconductor device
12/28/2006	US20060289962 An isolation region for use in a semiconductor device
12/28/2006	US20060289960 Structure improvement of depletion region in p-i-n photodiode
12/28/2006	US20060289959 Yield improvement in silicon-germanium epitaxial growth
12/28/2006	US20060289955 Semiconductor composite device and method of manufacturing the same
12/28/2006	US20060289953 Semiconductor device and manufacturing method of the same
12/28/2006	US20060289952 Method of composite gate formation
12/28/2006	US20060289951 Method of composite gate formation
12/28/2006	US20060289950 Method of composite gate formation
12/28/2006	US20060289949 Method of composite gate formation
12/28/2006	US20060289948 Method to control flatband/threshold voltage in high-k metal gated stacks and structures thereof
12/28/2006	US20060289947 Semiconductor device and its manufacturing method
12/28/2006	US20060289946 Method and apparatus for maintaining topographical uniformity of a semiconductor memory array
12/28/2006	US20060289945 Semiconductor memory device
12/28/2006	US20060289944 Nonvolatile memory devices having a fin shaped active region and methods of fabricating the same
12/28/2006	US20060289943 Memory
12/28/2006	US20060289942 Memory cell, semiconductor memory device, and method of manufacturing the same
12/28/2006	US20060289941 Transistor component
12/28/2006	US20060289940 Fin FET CMOS device, method of manufacturing the same, and memory including fin FET CMOS device
12/28/2006	US20060289939 Array substrate and display device having the same
12/28/2006	US20060289938 Non-volatile memory devices and related methods
12/28/2006	US20060289937 System for ESD protection with extra headroom in relatively low supply voltage integrated circuits
12/28/2006	US20060289933 Field effect transistor and method for producing a field effect transistor
12/28/2006	US20060289932 Semiconductor memory device having power decoupling capacitor
12/28/2006	US20060289931 Recessed gate structures including blocking members, methods of forming the same, semiconductor devices having the recessed gate structures and methods of forming the semiconductor devices
12/28/2006	US20060289930 Semiconductor device and method of fabricating the same
12/28/2006	US20060289929 Structure and method for forming laterally extending dielectric layer in a trench-gate FET
12/28/2006	US20060289928 Insulated gate type semiconductor device and manufacturing method thereof
12/28/2006	US20060289927 Non-volatile memory with hole trapping barrier
12/28/2006	US20060289926 Semiconductor device and method of manufacturing the same
12/28/2006	US20060289925 Non-volatile memory, manufacturing method and operating method thereof
12/28/2006	US20060289924 Low power electrically alterable nonvolatile memory cells and arrays
12/28/2006	US20060289923 Oxide epitaxial isolation
12/28/2006	US20060289922 Non-volatile semiconductor memory device
12/28/2006	US20060289921 Method of manufacturing a capacitor for semiconductor device
12/28/2006	US20060289920 Composite gate structure in an integrated circuit
12/28/2006	US20060289919 Two-sided surround access transistor for a 4.5F2 DRAM cell
12/28/2006	US20060289918 Low resistance peripheral local interconnect contacts with selective wet strip of titanium
12/28/2006	US20060289917 Semiconductor device, RF-IC and manufacturing method of the same
12/28/2006	US20060289915 Semiconductor device
12/28/2006	US20060289914 Semiconductor constructions, memory cells, DRAM arrays, electronic systems; methods of forming semiconductor constructions; and methods of forming DRAM arrays
12/28/2006	US20060289913 Pattern definition of MRAM device using chemical mechanical polishing
12/28/2006	US20060289909 Self-aligned low-k gate cap
12/28/2006	US20060289908 Field effect device with a channel with a switchable conductivity
12/28/2006	US20060289907 Metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions and methods of fabricating the same
12/28/2006	US20060289906 Semiconductor device including a capacitance

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