Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2007
11/08/2007US20070257333 Seeded growth process for preparing aluminum nitride single crystals
11/08/2007US20070257332 Bipolar transistor and a method of manufacturing the same
11/08/2007US20070257331 Anti-fuse memory cell
11/08/2007US20070257330 Semiconductor device
11/08/2007US20070257327 Semiconductor devices and methods of manufacture thereof
11/08/2007US20070257326 Integrated circuit structure and method of manufacturing a memory cell
11/08/2007US20070257323 Stacked contact structure and method of fabricating the same
11/08/2007US20070257322 Hybrid Transistor Structure and a Method for Making the Same
11/08/2007US20070257321 Semiconductor structure and fabrication thereof
11/08/2007US20070257320 Semiconductor device and manufacturing method thereof
11/08/2007US20070257318 Method of Manufacturing Semiconductor Integrated Circuit Device, and Semiconductor Integrated Circuit Device Manufactured by the Method
11/08/2007US20070257316 Semiconductor device
11/08/2007US20070257313 Semiconductor memory device including an SOI substrate
11/08/2007US20070257312 Semiconductor-on-insulator (soi) substrates and semiconductor devices using void spaces
11/08/2007US20070257309 PMOS transistor of semiconductor device, semiconductor device comprising the same, and method for manufacturing the same
11/08/2007US20070257308 Modifying work function in PMOS devices by counter-doping
11/08/2007US20070257307 NAND non-volatile two-bit memory and fabrication method
11/08/2007US20070257306 Semiconductor memory device and method for producing the same
11/08/2007US20070257305 Nonvolatile semiconductor memory device and manufacturing method thereof
11/08/2007US20070257304 Semiconductor device and method of manufacturing the same
11/08/2007US20070257303 Transistor and method for forming the same
11/08/2007US20070257302 Semiconductor device having a gate contact structure capable of reducing interfacial resistance and method of forming the same
11/08/2007US20070257301 Multi-gate fet with multi-layer channel
11/08/2007US20070257300 Structures and Methods of a Bistable Resistive Random Access Memory
11/08/2007US20070257299 NOR Flash Memory and Fabrication Process
11/08/2007US20070257298 Memory cell with reduced size and standby current
11/08/2007US20070257297 Memory device having nanocrystals and methods of manufacturing the same
11/08/2007US20070257296 Semiconductor device and method for manufacturing the same
11/08/2007US20070257295 Semiconductor memory device
11/08/2007US20070257293 Semiconductor memory device and method for production of the semiconductor memory device
11/08/2007US20070257292 Wireless Chip
11/08/2007US20070257291 Semiconductor memory cell and array using punch-through to program and read same
11/08/2007US20070257290 Memory structure and memory device
11/08/2007US20070257289 Liquid crystal display device and fabricating method thereof
11/08/2007US20070257288 Alignment mark for semiconductor device, and semiconductor device
11/08/2007US20070257287 Assemblies Comprising Magnetic Elements And Magnetic Barrier Or Shielding At Least Partially Around The Magnetic Elements
11/08/2007US20070257277 Semiconductor Device and Method for Manufacturing the Same
11/08/2007US20070257275 Imaging Method Utilizing Thyristor-Based Pixel Elements
11/08/2007US20070257269 Light emitting device and method for manufacturing the same
11/08/2007US20070257267 LED Extractor Composed of High Index Glass
11/08/2007US20070257266 Led package with converging optical element
11/08/2007US20070257263 Display device
11/08/2007US20070257262 Thin film transistor substrate and method for fabricating the same
11/08/2007US20070257261 Method for forming metal wiring, method for manufacturing active matrix substrate, device, electro-optical device, and electronic appratus
11/08/2007US20070257260 Multi-Channel Thin Film Transistor Structure
11/08/2007US20070257259 Input display with embedded photo sensor
11/08/2007US20070257258 Semiconductor evaluation device and evaluation method using the same
11/08/2007US20070257257 Nonvolatile memory device including amorphous alloy metal oxide layer and method of manufacturing the same
11/08/2007US20070257256 Photosensing thin film transistor
11/08/2007US20070257255 Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor
11/08/2007US20070257254 Organic light emitting display device
11/08/2007US20070257253 Organic light emitting display device and method of fabricating the same
11/08/2007US20070257252 Circuit structure with a double-gate organic thin film transistor device and application thereof
11/08/2007US20070257250 Organic electroluminescent device and fabrication methods thereof
11/08/2007US20070257248 Semiconductor device and electronic appliance using the same
11/08/2007US20070257247 Information reproducing system using information storage medium
11/08/2007US20070257246 Electric Device with Nanowires Comprising a Phase Change Material
11/08/2007US20070256291 Electronic devices with small functional elements supported on a carrier
11/08/2007DE112006000229T5 Nicht-planare MOS-Struktur mit einer Strained-Channel-Region Non-planar MOS structure including a strained channel region
11/08/2007DE102006023598B3 Semiconductor component has semiconductor body of conduction type in active area and peripheral area, peripheral area has reduced surface field semiconductor layer extending outward laterally from active area
11/08/2007DE102006020870A1 Semiconductor component, has trench transistors e.g. field-effect transistor, arranged in areas, where middle breakdown voltage of transistors in one of areas is different from middle breakdown voltage of trench transistors in another area
11/08/2007DE102006020636A1 Electronic component e.g. power semiconductor module, transporting/packing container, has molded body forming tub and another molded body forming cavities for respective components, where each cavity has wall, base and support devices
11/08/2007DE102006019934A1 Verfahren zur Bildung eines Feldeffekttransistors A method of forming a field effect transistor
11/08/2007DE102006012739B3 Leistungstransistor und Leistungshalbleiterbauteil Power transistor and power semiconductor component
11/08/2007DE102005028935B4 Bauelement mit variabler Kapazität, welches eine hohe Genauigkeit aufweist Component with variable capacity, which has a high accuracy
11/08/2007DE102004012555B4 Verfahren zur Ausbildung einer integrierten Schaltung mit Grabenisolation A method of forming an integrated circuit with grave insulation
11/08/2007CA2644660A1 High efficiency and/or high power density wide bandgap transistors
11/08/2007CA2636313A1 Semiconductor device and manufacturing method therefor
11/07/2007EP1852922A2 Mono-, oligo- and poly-bis(thienyl)arylenes and their use as charge transport materials
11/07/2007EP1852916A1 High voltage transistor
11/07/2007EP1852911A1 Semiconductor device
11/07/2007EP1852909A1 Process for integrating a non-volatile memory cell into a HV CMOS process
11/07/2007EP1852904A1 Dielectric film and method for forming the same
11/07/2007EP1852895A1 Diamond substrate and method for fabricating the same
11/07/2007EP1851804A2 Power electronic device of multi-drain type integrated on a semiconductor substrate and relative manufacturing process
11/07/2007EP1851797A1 Device and method for fabricating double-sided soi wafer scale package with through via connections
11/07/2007EP1851793A1 Method of fabrication a shallow trench isolation structure with oxide sidewall spacers
11/07/2007EP1735838A4 Optical devices featuring textured semiconductor layers
11/07/2007EP1665278A4 Nanotube-based switching elements with multiple controls and circuits made from same
11/07/2007EP1565931B1 Strained finfet cmos device structures
11/07/2007EP1287553A4 Chip scale surface mounted device and process of manufacture
11/07/2007EP1192668A4 Semiconductor device for low voltage protection with low capacitance
11/07/2007EP1190450B1 Electrostatic discharge protection of integrated circuits
11/07/2007EP1051745B1 A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating
11/07/2007EP1040517B1 Semiconductor component and manufacturing method for semiconductor component
11/07/2007CN200972861Y Low voltage transient curb diode chip
11/07/2007CN101069286A Variable capacitor single-electron device
11/07/2007CN101069279A Semiconductor device and its manufacturing method
11/07/2007CN101069278A Method for enhancing field oxide and integrated circuit with enhanced field oxide
11/07/2007CN101069275A Fine particles depositing device and method, and preparing method for light emitting element
11/07/2007CN101069274A Semiconductor device manufacturing method, semiconductor device, plasma nitriding treatment method, control program and computer storage medium
11/07/2007CN101069222A 显示装置 Display device
11/07/2007CN101068032A Semiconductor strain gauge and the manufacturing method
11/07/2007CN101068031A 半导体器件 Semiconductor devices
11/07/2007CN101068030A Semiconductor device and method of manufacturing the same
11/07/2007CN101068029A Double-fin type channel double-grid multifunction field effect transistor and producing method thereof
11/07/2007CN101068028A Semiconductor structure and metal oxide semiconductor element production method
11/07/2007CN101068019A Nonvolatile semiconductor memory device
11/07/2007CN101068004A Semiconductor device and its production method
11/07/2007CN100347917C 发光设备 Light-emitting devices
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