Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2007
10/30/2007US7288790 Thin film transistor array panel and manufacturing method thereof
10/30/2007US7288789 Semiconductor device having thin film transistor and light-shielding film
10/30/2007US7288787 Thin-film transistor, method for manufacturing thin-film transistor, and display using thin-film transistors
10/30/2007US7288785 Substrate and method for measuring the electro-physiological properties of cell membranes
10/30/2007US7288784 Structure for amorphous carbon based non-volatile memory
10/30/2007US7288781 Programmable structure, an array including the structure, and methods of forming the same
10/30/2007US7288663 Process for preparing linear organic oligomers
10/30/2007US7288617 Conjugated polymers containing spirobifluorene units and fluorene units, and the use thereof
10/30/2007US7288477 Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device
10/30/2007US7288470 Semiconductor device comprising buried channel region and method for manufacturing the same
10/30/2007US7288468 Luminescent efficiency of semiconductor nanocrystals by surface treatment
10/30/2007US7288457 Method for making semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions
10/30/2007US7288455 Method of forming non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors
10/30/2007US7288446 Single and double-gate pseudo-FET devices for semiconductor materials evaluation
10/30/2007US7288445 Double gated transistor and method of fabrication
10/30/2007US7288444 Thin film transistor and method of manufacturing the same
10/30/2007US7288443 Structures and methods for manufacturing p-type MOSFET with graded embedded silicon-germanium source-drain and/or extension
10/30/2007US7288442 Method for manufacturing contact structures of wirings
10/30/2007US7288432 Electronic devices with small functional elements supported on a carrier
10/30/2007US7288429 Image sensor with vertically integrated thin-film photodiode
10/30/2007US7288424 Integrated driver process flow
10/30/2007US7288420 Method for manufacturing an electro-optical device
10/30/2007US7288294 Method of crystallizing amorphous silicon using nanoparticles
10/30/2007US7288152 Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same
10/30/2007US7287328 Methods for distributed electrode injection
10/25/2007WO2007121010A2 Transistor and method with dual layer passivation
10/25/2007WO2007120983A1 Quantum dot switching device
10/25/2007WO2007120769A2 Low inductance bond-wireless co-package for high power density devices, especially for igbts and diodes
10/25/2007WO2007120493A1 Nanofin tunneling transistors
10/25/2007WO2007120492A1 Nanowire transistor with surrounding gate
10/25/2007WO2007120345A2 Charge balance insulated gate bipolar transistor
10/25/2007WO2007120301A2 Electronic device with a multi-gated electrode structure and a process for forming the electronic device
10/25/2007WO2007120292A2 Integrated circuit using finfets and having a static random access memory (sram)
10/25/2007WO2007120255A2 Semiconductor nanocrystal heterostructures
10/25/2007WO2007120010A1 Semiconductor device and method of manufacturing the same
10/25/2007WO2007119795A1 Electronic device, electronic device manufacturing method and organic el display apparatus
10/25/2007WO2007119748A1 Magnetic random access memory and method for manufacturing the same
10/25/2007WO2007119727A1 Electro-optic device, and tft substrate for current control and method for manufacturing the same
10/25/2007WO2007119703A1 Method for producing crystalline organic semiconductor thin film, organic semiconductor thin film, electronic device, and thin film transistor
10/25/2007WO2007119490A1 Transistor element, its manufacturing method, light emitting element, and display
10/25/2007WO2007119442A1 Organic transistor improved in charge mobility and its manufacturing method
10/25/2007WO2007119441A1 Power ic device and method for manufacturing same
10/25/2007WO2007119389A1 Semiconductor device
10/25/2007WO2007119386A1 Field effect transistor using oxide film for channel and method of manufacturing the same
10/25/2007WO2007119321A2 Light-emitting device using oxide semiconductor thin-film transistor and image display apparatus using the same
10/25/2007WO2007119265A1 Stress-applied semiconductor device and method for manufacturing same
10/25/2007WO2007047762A3 Pressure responsive sensor
10/25/2007WO2007037929A3 Electronic device with a gate electrode having at least two portions and a process for forming the electronic device
10/25/2007WO2007032197A3 Semiconductor device and method of manufacturing the same
10/25/2007WO2006138361A3 Method and apparatus for improved esd performance
10/25/2007WO2006091802A3 Norbornene-type polymers, compositions thereof and lithographic processes using such compositions
10/25/2007US20070249170 Process for improving critical dimension uniformity of integrated circuit arrays
10/25/2007US20070249142 Semiconductor devices and method of manufacturing them
10/25/2007US20070249138 Buried dielectric slab structure for CMOS imager
10/25/2007US20070249125 Flash memory device with stacked dielectric structure including zirconium oxide and method for fabricating the same
10/25/2007US20070249124 DMOS device of small dimensions and manufacturing process thereof
10/25/2007US20070249122 Array substrate for liquid crystal display device using organic semiconductor material and method of fabricating the same
10/25/2007US20070249120 Nonvolatile semiconductor memory device
10/25/2007US20070249118 Semiconductor device and method of manufacturing the same
10/25/2007US20070249116 Transitioning the state of phase change material by annealing
10/25/2007US20070249115 Dynamic memory cell structures
10/25/2007US20070249110 Nonvolatile memory device, method of fabricating the same, and organic lighting emitting diode display device including the same
10/25/2007US20070249108 Thin film transistor having ldd structure
10/25/2007US20070249105 Liquid crystal display, thin film transistor array panel for liquid crystal display and manufacturing method thereof
10/25/2007US20070249087 Electronic devices containing acene-thiophene copolymers with silylethynyl groups
10/25/2007US20070249086 Phase change memory
10/25/2007US20070249084 Active matrix display device and method of manufacturing the same
10/25/2007US20070249081 Non-planar surface structures and process for microelectromechanical systems
10/25/2007US20070249076 Organic electroluminescent device, method of manufacturing the same, and electronic apparatus
10/25/2007US20070249075 Led package and method for producing the same
10/25/2007US20070248898 Targets for alignment of semiconductor masks
10/25/2007US20070248818 Single-Crystal Semiconductor Layer with Heteroatomic Macronetwork
10/25/2007US20070247904 Nano-enabled memory devices and anisotropic charge carrying arrays
10/25/2007US20070247213 Apparatus and Method for Improving Drive-Strength and Leakage of Deep Submicron MOS Transistors
10/25/2007US20070246821 Utra-thin substrate package technology
10/25/2007US20070246801 Varactor
10/25/2007US20070246799 Semiconductor device
10/25/2007US20070246796 Semiconductor device with improved contact fuse
10/25/2007US20070246795 Dual depth shallow trench isolation and methods to form same
10/25/2007US20070246794 Integrated circuit including power diode
10/25/2007US20070246793 Electronic device including a semiconductor layer and another layer adjacent to an opening within the semiconductor layer and a process of forming the same
10/25/2007US20070246792 Method for fabricating back end of the line structures with liner and seed materials
10/25/2007US20070246786 Doping of SiC structures and methods associated with same
10/25/2007US20070246784 Unipolar nanotube transistor using a carrier-trapping material
10/25/2007US20070246783 Methods of manufacturing semiconductor devices and semiconductor devices manufactured using such a method
10/25/2007US20070246782 Memory cell having sidewall spacer for improved homogeneity
10/25/2007US20070246781 Mos semiconductor device and method of fabricating the same
10/25/2007US20070246780 Semiconductor device and a method of manufacturing the same
10/25/2007US20070246779 Dual gate oxide structure in semiconductor device and method thereof
10/25/2007US20070246777 Electronic appliance including transistor having ldd region
10/25/2007US20070246773 Drive circuit and drain extended transistor for use therein
10/25/2007US20070246772 MOSFET power package
10/25/2007US20070246771 Lateral double-diffused metal oxide semiconductor (LDMOS) device with an enhanced drift region that has an improved Ron area product
10/25/2007US20070246770 Semiconductor device and method of manufacturing the same
10/25/2007US20070246769 Semiconductor device including adjacent two interconnection lines having different distances therebetween
10/25/2007US20070246768 Nonvolatile memory device and method of fabricating the same
10/25/2007US20070246767 Semiconductor device formed on a SOI substrate
10/25/2007US20070246766 Phase change memory elements using self-aligned phase change material layers and methods of making and using same
10/25/2007US20070246765 Semiconductor memory device and method for production
10/25/2007US20070246764 Low-temperature metal-induced crystallization of silicon-germanium films
1 ... 1030 1031 1032 1033 1034 1035 1036 1037 1038 1039 1040 1041 1042 1043 1044 1045 1046 1047 1048 1049 1050 ... 2182