Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2007
11/21/2007CN100350626C Semiconductor device with trench structure
11/21/2007CN100350625C Imbedded grating semiconductor devices
11/21/2007CN100350618C 半导体装置 Semiconductor device
11/21/2007CN100350617C Semiconductor element and semiconductor device using said element
11/21/2007CN100350615C Semiconductor device and method of fabricating the same
11/21/2007CN100350614C Electrodes for RRAM memory cells
11/21/2007CN100350613C Programmable memory address and decode circuits with ultra thin vertical body transistors
11/21/2007CN100350612C Non-volatile memory cell and fabrication method thereof
11/21/2007CN100350606C Voltage variable material for direct application and devices employing same
11/21/2007CN100350577C Gallium-indium-nitride-arsenide based epitaxial wafer and hetero-field effect transistor using the same, and its manufacturing method
11/21/2007CN100350576C Method of manufacturing an electronic device comprising a thin film transistor
11/21/2007CN100350575C Vertical dual gate field effect transistor
11/21/2007CN100350564C Semiconductor chip with asymmetric edge contour and manufacturing method thereof
11/21/2007CN100350561C Method for fabricating SIGE substrate materials on metastable insulator and substrate materials
11/21/2007CN100350553C Method for forming polycrystalline silicon film
11/21/2007CN100350503C Method for reducing coupling effect between nonvolatile memory storage cell
11/21/2007CN100350499C Magnetic RAM
11/21/2007CN100350445C Semiconductor device and its drive method
11/21/2007CN100350442C Display driver, display device, and portable electronic apparatus
11/21/2007CN100350319C Liquid crystal display panel and fabricating method thereof
11/21/2007CN100350318C 半导体器件 Semiconductor devices
11/21/2007CN100350310C Coloured liquid crystal display device
11/21/2007CN100350303C LCD device
11/20/2007US7298652 Non-volatile memory and semiconductor device
11/20/2007US7298647 Operating techniques for reducing program and read disturbs of a non-volatile memory
11/20/2007US7298638 Operating an electronic device having a vertical gain cell that includes vertical MOS transistors
11/20/2007US7298431 Liquid crystal display device and fabricating method thereof
11/20/2007US7298355 Display device
11/20/2007US7298163 TFT array inspection device
11/20/2007US7298052 Micro chip-scale-package system
11/20/2007US7298051 Semiconductor element and manufacturing method thereof
11/20/2007US7298047 Electronic circuit device
11/20/2007US7298029 Semiconductor devices and manufacturing method therefor
11/20/2007US7298023 Electronic device with organic insulator
11/20/2007US7298021 Electronic device and method for manufacturing the same
11/20/2007US7298020 Semiconductor device and method of manufacturing the same
11/20/2007US7298019 Capacitor of semiconductor device and method of manufacturing the same
11/20/2007US7298017 Actuation using lithium/metal alloys and actuator device
11/20/2007US7298016 Electromechanical memory array using nanotube ribbons and method for making same
11/20/2007US7298015 Three-dimensional structure element and method of manufacturing the element, optical switch, and micro device
11/20/2007US7298013 Compound used to form a self-assembled monolayer, layer structure, semiconductor component having a layer structure, and method for producing a layer structure
11/20/2007US7298012 Shallow junction semiconductor
11/20/2007US7298011 Semiconductor device with recessed L-shaped spacer and method of fabricating the same
11/20/2007US7298007 SRAM formation using shadow implantation
11/20/2007US7298006 Nonvolatile semiconductor memory device including improved gate electrode
11/20/2007US7298005 Nonvolatile semiconductor memory and fabrication method for the same
11/20/2007US7298004 Charge-trapping memory cell and method for production
11/20/2007US7298003 Nonvolatile memory device having STI structure
11/20/2007US7298001 Three-dimensional capacitor structure
11/20/2007US7298000 Conductive container structures having a dielectric cap
11/20/2007US7297999 Semiconductor device with capacitors and its manufacture method
11/20/2007US7297998 Semiconductor devices having a buried and enlarged contact hole and methods of fabricating the same
11/20/2007US7297997 Semiconductor memory device with dual storage node and fabricating and operating methods thereof
11/20/2007US7297995 Transparent metal shielded isolation for image sensors
11/20/2007US7297994 Semiconductor device having a retrograde dopant profile in a channel region
11/20/2007US7297993 Bipolar transistor and fabrication method of the same
11/20/2007US7297992 Method and structure for integration of phosphorous emitter in an NPN device in a BiCMOS process
11/20/2007US7297991 Bipolar junction transistor and fabricating method
11/20/2007US7297990 Si/SiGe interband tunneling diode structures including SiGe diffusion barriers
11/20/2007US7297989 Diboride single crystal substrate, semiconductor device using this and its manufacturing method
11/20/2007US7297988 Flip chip type nitride semiconductor light emitting device
11/20/2007US7297985 Display device and display unit using the same
11/20/2007US7297983 Method for fabricating an integrated circuit on a semiconductor substrate
11/20/2007US7297982 Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them
11/20/2007US7297981 Electro-optical device having a light-shielding film comprising alternating layers of silicide and nitrided silicide
11/20/2007US7297980 Flat panel display device with polycrystalline silicon thin film transistor
11/20/2007US7297979 Thin film transistor array panel for a display
11/20/2007US7297978 Semiconductor thin film and semiconductor device
11/20/2007US7297977 Semiconductor device
11/20/2007US7297976 Optoelectronic transmitter integrated circuit and method of fabricating the same using selective growth process
11/20/2007US7297975 Non-volatile, resistive memory cell based on metal oxide nanoparticles, process for manufacturing the same and memory cell arrangement of the same
11/20/2007US7297634 Method and apparatus for semiconductor device and semiconductor memory device
11/20/2007US7297630 Methods of fabricating via hole and trench
11/20/2007US7297621 Flexible carbon-based ohmic contacts for organic transistors
11/20/2007US7297617 Method for controlling diffusion in semiconductor regions
11/20/2007US7297612 Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes
11/20/2007US7297606 Metal-oxide-semiconductor device including a buried lightly-doped drain region
11/20/2007US7297605 Source/drain extension implant process for use with short time anneals
11/20/2007US7297604 Semiconductor device having dual isolation structure and method of fabricating the same
11/20/2007US7297602 Conductive metal oxide gate ferroelectric memory transistor
11/20/2007US7297601 Method for reduced N+ diffusion in strained Si on SiGe substrate
11/20/2007US7297600 Methods of forming fin field effect transistors using oxidation barrier layers
11/20/2007US7297595 Non-volatile memory device and fabricating method thereof
11/20/2007US7297594 Non-volatile semiconductor memory device and method of manufacturing the same
11/20/2007US7297590 Method for fabricating an integrated pin diode and associated circuit arrangement
11/20/2007US7297585 Method of manufacturing semiconductor device having impurity region under isolation region
11/20/2007US7297583 Method of making strained channel CMOS transistors having lattice-mismatched epitaxial
11/20/2007US7297582 Method of forming high voltage N-LDMOS transistors having shallow trench isolation region with drain extensions
11/20/2007US7297581 SRAM formation using shadow implantation
11/20/2007US7297580 Methods of fabricating transistors having buried p-type layers beneath the source region
11/20/2007US7297579 Semiconductor device and manufacturing method thereof
11/20/2007US7297578 Method for producing a field effect transistor
11/20/2007US7297559 Method of fabricating memory and memory
11/20/2007US7297361 In-line deposition processes for circuit fabrication
11/20/2007US7296471 Acceleration sensor
11/15/2007WO2007131119A1 Semiconductor device having a semiconductor-on-insulator configuration and a superlattice and associated methods
11/15/2007WO2007131117A1 Semiconductor device including a floating gate memory cell with a superlattice channel and associated methods
11/15/2007WO2007131046A2 Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques
11/15/2007WO2007130973A1 Semiconductor device including a dopant blocking superlattice and associated methods
11/15/2007WO2007130925A2 Body-tied mosfet device with strained active area
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