Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2007
10/11/2007US20070234585 Aligning apparatus
10/11/2007DE112005002852T5 Passivierungsstruktur mit Spannungsausgleichschleifen Passivation with voltage compensation loops
10/11/2007DE102007012986A1 Vertikaler Halbleiterleistungsschalter, elektronisches Bauelement und Verfahren zu dessen Herstellung Vertical semiconductor power switch, electronic component and method for its production
10/11/2007DE102007011247A1 Halbleiteranordnungen und Verfahren zur Herstellung derselben Semiconductor devices and methods of manufacturing the same
10/11/2007DE102007008389A1 Excess temperature recognizing circuit arrangement for power transistor, has temperature sensor with parasitic diode structure, and unit evaluating current supplied to diode and temperature dependent voltage drop at diode
10/11/2007DE102006025958B3 Semiconductor component e.g. crystal diode, for use in semiconductor power electronics, has three sets of semiconductor zones, where one set of zones is arranged at distance from each other
10/11/2007DE102006015132A1 Semiconductor structure for use in smart power technology product, has deep trench isolation with meander-shaped course formed in control of bays such that one of diffusion areas is arranged in one of bays
10/11/2007DE102006015131A1 Semiconductor structure, has buried layer formed in parts of semiconductor substrate, and trench isolation arranged and electrically isolating sinker contact from adjacent areas of epilayer
10/11/2007DE102006015077A1 Technik zur Bereitstellung von Verspannungsquellen in Transistoren in unmittelbarer Nähe zu einem Kanalgebiet durch Vertiefen von Drain- und Source-Gebieten Technique for providing tension springs in transistors in close proximity to a channel region by recessing drain and source regions
10/11/2007DE102006015075A1 Technik zur Bereitstellung von Verspannungsquellen in MOS-Transistoren in unmittelbarer Nähe zu einem Kanalgebiet Technique for providing tension springs in MOS transistors in the immediate vicinity of a channel region
10/11/2007DE102006014580A1 Vertical high volt semiconductor device`s e.g. thyristor, lip, has lateral semiconductor device provided in boundary region adjacent to cell field to contribute to current load-carrying capacity when high volt semiconductor device is on
10/11/2007DE102005061263B4 Halbleiterwafersubstrat für Leistungshalbleiterbauelemente sowie Verfahren zur Herstellung desselben The same semiconductor wafer substrate for power semiconductor devices and methods for preparing
10/11/2007DE102005058435B4 Halbleiterbauelement mit einem Channelstopper und Verfahren zur Erzeugung eines Channelstoppers A semiconductor device comprising a channel stopper and method for generating a channel stopper
10/11/2007DE102004017166B4 Verfahren zur Herstellung von Bipolar-Transistoren A process for the production of bipolar transistors
10/10/2007EP1843470A1 Power system inhibit method and device and structure therefor
10/10/2007EP1843404A2 Zinc oxide films containing p-type dopant and process for preparing same
10/10/2007EP1843397A1 Semiconductor device
10/10/2007EP1843390A1 Semiconductor device provided with mis structure and method for manufacturing the same
10/10/2007EP1842240A2 TiC AS A THERMALLY STABLE p-METAL CARBIDE ON HIGH k SiO2 GATE STACKS
10/10/2007EP1842239A2 Structure and method to optimize strain in cmosfets
10/10/2007EP1842238A2 Semiconductor devices
10/10/2007EP1842237A2 Electronic device and process for forming same
10/10/2007EP1842236A2 Process for high voltage superjunction termination
10/10/2007EP1842235A1 Dual silicide process to improve device performance
10/10/2007EP1842229A1 Bipolar transistor and method of fabricating the same
10/10/2007EP1656701A4 Semiconductor device and method
10/10/2007EP1547131A4 Large-diameter sic wafer and manufacturing method thereof
10/10/2007EP1379884B1 Sensor
10/10/2007EP1243029B1 Bipolar transistor with upper heterojunction collector and method for making the same
10/10/2007EP1224700A4 Lateral rf mos device with improved breakdown voltage
10/10/2007CN101053085A Thin film semiconductor devices and methods of making
10/10/2007CN101053084A Electronic circuit board and its manufacturing method
10/10/2007CN101053083A Semiconductor device manufacturing method and plasma oxidation method
10/10/2007CN101053082A Electronic device including a self-assembled monolayer, and a method of fabricating the same
10/10/2007CN101053075A Diamond semiconductor element and method for manufacturing same
10/10/2007CN101053064A Method for developing strain layer
10/10/2007CN101053005A Active matrix substrate, display device, and pixel defect correcting method
10/10/2007CN101051671A Transistor, pixel electrode substrate, electro-optic device, electronic apparatus, and process for manufacturing semiconductor element
10/10/2007CN101051655A Schottky part and semiconductor making process for making same
10/10/2007CN101051654A Semiconductor resistance and semiconductor making process for making same
10/10/2007CN101051653A Single gate non-volatile flash memory cell
10/10/2007CN101051652A Semiconductor device and a method of manufacturing the same
10/10/2007CN101051651A Abnormal juntion dual-pole transistor and its making method
10/10/2007CN101051650A Multiple step grating structure and its producing method
10/10/2007CN101051641A Semiconductor device and a method of manufacturing the same
10/10/2007CN101051638A Semiconductor part
10/10/2007CN101051137A Method for producing liquid crystal display
10/10/2007CN101051134A Liquid crystal display device, semiconductor device, and electronic appliance
10/10/2007CN101051126A Panel for liquid crystal display
10/10/2007CN101051125A Liquid crystal display panel and its driving circuit and driving method
10/10/2007CN101051038A Method of detecting bio-molecues using the same field effect transistor on the gate sensing surface
10/10/2007CN101051037A Method of detecting bio-molecules using field effect transistor
10/10/2007CN100342553C Electrical devices and a method of manufacturing the same
10/10/2007CN100342552C Thin film transistor and manufacturing method thereof
10/10/2007CN100342551C Semiconductor device and method for mfg. same
10/10/2007CN100342550C Structure of double-grid metal oxide semiconductor transistor and producig method thereof
10/10/2007CN100342549C Structure of partial SOI power apparatus and implementing method
10/10/2007CN100342548C Operatable grating contact of SOI
10/10/2007CN100342547C High-breakdown voltage transistor with high electronic mobility
10/10/2007CN100342546C Charge-coupled device and its mfg. method
10/10/2007CN100342545C Trench DMOS device with improved drain contact
10/10/2007CN100342544C High voltage power MOSFET includes doped columns
10/10/2007CN100342542C Solid camera element and its mfg. method
10/10/2007CN100342535C Turn-on-efficient bipolar structures with deep N-well for on-chip ESD protection
10/10/2007CN100342523C Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers
10/10/2007CN100342507C Structures and methods for making strained mosfets
10/10/2007CN100342506C High operation voltage double spreading drain MOS device using twice ion injection
10/10/2007CN100342505C Method for fabricating a high voltage power MOSFET having a voltage sustaining region that includes doped columns formed by rapid diffusion
10/10/2007CN100342500C Method for forming dielectric film
10/10/2007CN100342494C Strained si based layer made by UHV-CVD, and devices therein
10/10/2007CN100342484C Semiconductor device and mfg method thereof
10/10/2007CN100342279C Substrate for a liquid crystal display device and fabricating method thereof
10/10/2007CN100342277C Array substrate for in plane switching mode liquid crystal display device and method for manufacturing the same
10/09/2007US7281136 LSI design method and verification method
10/09/2007US7280404 Nonvolatile semiconductor memory device that erases stored data after a predetermined time period without the use of a timer circuit
10/09/2007US7280399 Semiconductor device
10/09/2007US7280395 Methods for neutralizing holes in tunnel oxides of floating-gate memory cells and devices
10/09/2007US7280394 Field effect devices having a drain controlled via a nanotube switching element
10/09/2007US7280382 Apparatus and methods for optically-coupled memory systems
10/09/2007US7280381 Apparatus and methods for optically-coupled memory systems
10/09/2007US7280329 Integrated circuit device having input/output electrostatic discharge protection cell equipped with electrostatic discharge protection element and power clamp
10/09/2007US7280102 Light sensitive display
10/09/2007US7279954 On-chip temperature detection device
10/09/2007US7279796 Microelectronic die having a thermoelectric module
10/09/2007US7279792 Semiconductor device and method of manufacturing same
10/09/2007US7279787 Microelectronic complex having clustered conductive members
10/09/2007US7279776 Method of manufacturing semiconductor device and semiconductor device
10/09/2007US7279774 Bulk substrates in FinFETs with trench insulation surrounding FIN pairs having FINs separated by recess hole shallower than trench
10/09/2007US7279772 Edge intensive antifuse and method for making the same
10/09/2007US7279771 Wiring board mounting a capacitor
10/09/2007US7279770 Isolation techniques for reducing dark current in CMOS image sensors
10/09/2007US7279769 Semiconductor device and manufacturing method thereof
10/09/2007US7279762 Magnetoresistive memory device assemblies, and methods of forming magnetoresistive memory device assemblies
10/09/2007US7279760 Nanotube relay device
10/09/2007US7279759 Membrane sensor
10/09/2007US7279758 N-channel MOSFETs comprising dual stressors, and methods for forming the same
10/09/2007US7279757 Double-sided extended drain field effect transistor
10/09/2007US7279755 SRAM cell with improved layout designs
10/09/2007US7279754 Semiconductor memory device and a method of manufacturing the same
10/09/2007US7279753 Floating base bipolar ESD devices
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