Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2007
11/28/2007EP1860661A1 Floating gate memory cell reading and writing technique
11/28/2007EP1859485A1 Nanometric mos transistor with maximized ratio between on-state current and off-state current
11/28/2007EP1859484A2 Group iii nitride field effect transistors (fets) capable of withstanding high temperature reverse bias test conditions
11/28/2007EP1859476A1 Methods of forming pluralities of capacitors
11/28/2007EP1859475A2 Method of fabrication of ai/ge bonding in a wafer packaging environment and a product produced therefrom
11/28/2007EP1395872B1 Method of manufacture of an active plate
11/28/2007EP1021835B1 Method of manufacturing a bipolar power transistor
11/28/2007CN200983367Y Voltage-controlled semiconductor structure and resistor
11/28/2007CN101080821A Organic thin-film transistor and method for manufacturing same
11/28/2007CN101080820A Scrambling method to reduce wordline coupling noise
11/28/2007CN101080815A Semiconductor device and method of manufacturing it
11/28/2007CN101080814A Semiconductor device and method for manufacturing same
11/28/2007CN101080811A Self-forming metal silicide gate for CMOS devices
11/28/2007CN101080808A Semiconductor substrate, semiconductor device and method of manufacturing a semiconductor substrate
11/28/2007CN101079469A MgO dual-potential magnetic tunnel structure with quanta effect and its purpose
11/28/2007CN101079450A Fin channel dual-bar multi-function field effect transistor and its making method
11/28/2007CN101079449A Semiconductor device and method of manufacturing same
11/28/2007CN101079448A Single poly, multi-bit non-volatile memory device and methods for operating the same
11/28/2007CN101079447A Semiconductor element, IC and semiconductor element making method
11/28/2007CN101079446A Horizontal dispersion oxide semiconductor of heterogeneous bar multi-step field electrode board
11/28/2007CN101079445A Semiconductor device and method of manufacturing the same
11/28/2007CN101079444A Semiconductor memory device having a recess-type control gate electrode and method of fabricating the semiconductor memory device
11/28/2007CN101079443A Semiconductor device and its making method
11/28/2007CN101079442A Field-effect transistor
11/28/2007CN101079441A Semiconductor device and its forming method
11/28/2007CN101079440A 介电层与薄膜晶体管 Dielectric layer and a thin film transistor
11/28/2007CN101079435A Solid-state imaging device and method of manufacturing the same
11/28/2007CN101079434A 3D dual fin channel dual-bar multi-function field effect transistor and its making method
11/28/2007CN101079433A Strained insulated silicon
11/28/2007CN101079432A 显示装置 Display device
11/28/2007CN101079431A Semiconductor device and active matrix display device
11/28/2007CN101079427A Semiconductor device and a method of manufacturing the same
11/28/2007CN101079426A Structure and method of sub-gate AND architectures employing bandgap engineered SONOS devices
11/28/2007CN101079419A Method and structure for reducing contact resistance
11/28/2007CN101079397A Method of fabricating semiconductor device
11/28/2007CN101079387A Device package and methods for the fabrication and testing thereof
11/28/2007CN101079381A Sectional field effect transistor making method
11/28/2007CN101079380A Semiconductor structure and its making method
11/28/2007CN100352077C Electrochemical device
11/28/2007CN100352063C Semiconductor device and its manufacturing method
11/28/2007CN100352062C Grid structure from material with high dielectric constant and preparing technique
11/28/2007CN100352061C Method for manufacturing semiconductor device
11/28/2007CN100352059C 半导体集成电路装置 The semiconductor integrated circuit device
11/28/2007CN100352058C Semiconductor device
11/28/2007CN100352054C Polysilicon boundary step resetter
11/28/2007CN100352035C Boron-doped titanium nitride layer for high aspect artio semiconductor devices
11/28/2007CN100352022C Semiconductor device and a method of manufacturing the same
11/28/2007CN100352021C Method for producing multi-bit memory cell
11/28/2007CN100352020C Method of manufacture of finfet devices with T-shaped fins and devices manufactured thereby
11/28/2007CN100352017C Semiconductor device and method for manufacturing semiconductor device
11/28/2007CN100352016C Semiconductor device and its manufacturing method
11/28/2007CN100352010C Method of manufacturing a semiconductor device
11/28/2007CN100352005C Crystallization apparatus and crystallization method
11/28/2007CN100352003C Semiconductor device, electro-optical device, integrated circuit and electronic equipment
11/28/2007CN100351994C FinFET SRAM cell using invested FinFET thin film transistors
11/28/2007CN100351887C Active matrix display device
11/28/2007CN100351694C LCD device and method for manufacturing same
11/28/2007CN100351693C Electro-optical device, electronic apparatus, and method of manufacturing electro-optical device
11/28/2007CN100351692C Pattern forming method and method for producing liquid crystal display using the method
11/28/2007CN100351691C Conductive element of thin membrane transistor in planar displaying device
11/28/2007CN100351690C Liquid crystal display device
11/28/2007CN100351689C Thin film transistor array panel
11/28/2007CN100351631C Acceleration transducer
11/28/2007CN100351425C In-line deposition processes for circuit fabrication
11/27/2007US7302671 Integrated circuit logic with self compensating shapes
11/27/2007US7302378 Electrostatic discharge protection device modeling method and electrostatic discharge simulation method
11/27/2007US7301847 Method and device for a main board commonly associated with DDR2 or DDR1
11/27/2007US7301809 Nonvolatile semiconductor memory
11/27/2007US7301802 Circuit arrays having cells with combinations of transistors and nanotube switching elements
11/27/2007US7301692 Micro mirror and method for fabricating the same
11/27/2007US7301599 Two step maskless exposure of gate and data pads
11/27/2007US7301598 Electro-optical device and electronic apparatus
11/27/2007US7301597 Array substrate for a liquid crystal display device and manufacturing method of the same
11/27/2007US7301517 Liquid-crystal display apparatus capable of reducing line crawling
11/27/2007US7301275 Organic EL display device including a step alleviation in light emitting area
11/27/2007US7301243 High-reliable semiconductor device using hermetic sealing of electrodes
11/27/2007US7301240 Semiconductor device
11/27/2007US7301239 Wiring structure to minimize stress induced void formation
11/27/2007US7301238 Structure and method of forming an enlarged head on a plug to eliminate the enclosure requirement
11/27/2007US7301229 Electrostatic discharge (ESD) protection for integrated circuit packages
11/27/2007US7301221 Controlling diffusion in doped semiconductor regions
11/27/2007US7301220 Semiconductor device and method of forming a semiconductor device
11/27/2007US7301219 Electrically erasable programmable read only memory (EEPROM) cell and method for making the same
11/27/2007US7301218 Parallel capacitor of semiconductor device
11/27/2007US7301217 Decoupling capacitor design
11/27/2007US7301216 Fuse structure
11/27/2007US7301213 Acoustic sensor
11/27/2007US7301212 MEMS microphone
11/27/2007US7301211 Method of forming an oxide film
11/27/2007US7301210 Method and structure to process thick and thin fins and variable fin to fin spacing
11/27/2007US7301209 Semiconductor device
11/27/2007US7301208 Semiconductor device and method for fabricating the same
11/27/2007US7301207 Semiconductor device capable of threshold voltage adjustment by applying an external voltage
11/27/2007US7301204 SOI component with increased dielectric strength and improved heat dissipation
11/27/2007US7301203 Superjunction semiconductor device
11/27/2007US7301202 Semiconductor device and method of manufacturing the same
11/27/2007US7301201 High voltage device having polysilicon region in trench and fabricating method thereof
11/27/2007US7301200 Trench FET with self aligned source and contact
11/27/2007US7301199 Nanoscale wires and related devices
11/27/2007US7301198 Semiconductor device having logic circuitry and memory circuitry on the same substrate, and its use in portable electronic equipment and IC card
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