Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2007
10/18/2007US20070242548 Programmable Semiconductor Device
10/18/2007US20070241748 Field imager
10/18/2007US20070241463 Electrode, manufacturing method of the same, and semiconductor device having the same
10/18/2007US20070241428 Transistor structure with minimized parasitics and method of fabricating the same
10/18/2007US20070241427 Mesa-type bipolar transistor
10/18/2007US20070241425 Three-dimensional capacitor structure
10/18/2007US20070241424 Vertical parallel plate capacitor using spacer shaped electrodes and method for fabrication thereof
10/18/2007US20070241423 Methods and apparatus for integrated circuit having multiple dies with at least one on chip capacitor
10/18/2007US20070241422 Seal-Ring Structure for System-Level ESD Protection
10/18/2007US20070241421 Semiconductor structure and method of manufacture
10/18/2007US20070241420 Semiconductor device and method for fabricating same
10/18/2007US20070241419 Transistor and method with dual layer passivation
10/18/2007US20070241415 Micro-electro mechanical system device using silicon on insulator wafer and method of manufacturing the same
10/18/2007US20070241414 Semiconductor Device and Manufacturing Process Therefor
10/18/2007US20070241411 Structures and methods for forming sram cells with self-aligned contacts
10/18/2007US20070241410 Magnetic memory device and method for fabricating the same
10/18/2007US20070241407 Electrostatic discharge protection device and method of fabricating the same
10/18/2007US20070241404 Semiconductor device and manufacturing method thereof
10/18/2007US20070241403 Integrated circuit with different channel materials for P and N channel transistors and method therefor
10/18/2007US20070241397 Semiconductor apparatus and method of manufacturing the same
10/18/2007US20070241396 Semiconductor apparatus and method of manufacturing the same
10/18/2007US20070241395 High density memory array having increased channel widths
10/18/2007US20070241394 Insulated Gate Semiconductor Device
10/18/2007US20070241393 Low inductance bond-wireless co-package for high power density devices, especially for IGBTs and diodes
10/18/2007US20070241392 Non-volatile flash memory structure and method for operating the same
10/18/2007US20070241391 Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration
10/18/2007US20070241390 Semiconductor device and method for manufacturing the same
10/18/2007US20070241389 Semiconductor device
10/18/2007US20070241388 Semiconductor device
10/18/2007US20070241387 Nonvolatile semiconductor memory device
10/18/2007US20070241386 Method for reducing topography of non-volatile memory and resulting memory cells
10/18/2007US20070241385 Phase change memory device for optimized current consumption efficiency and operation speed and method of manufacturing the same
10/18/2007US20070241384 Methods and apparatus for non-volatile semiconductor memory devices
10/18/2007US20070241383 Single-gate non-volatile memory and operation method thereof
10/18/2007US20070241381 Methods for Fabricating Semiconductor Devices
10/18/2007US20070241380 Semiconductor storage device
10/18/2007US20070241379 Compositions for thin-film capacitance device, high-dielectric constant insulating film, thin-film capacitance device and thin-film multilayer capacitor
10/18/2007US20070241378 Method for forming bit line contacts and bit lines during the formation of a semiconductor device, and devices and systems including the bit lines and bit line contacts
10/18/2007US20070241373 Semiconductor Device and Its Manufacturing Method
10/18/2007US20070241371 Memory device and manufacturing method
10/18/2007US20070241367 Ultra Scalable High Speed Heterojunction Vertical n-Channel Misfets and Methods Thereof
10/18/2007US20070241366 Field effect transistor with shifted gate
10/18/2007US20070241365 Semiconductor integrated circuit device
10/18/2007US20070241359 LED package and method for producing the same
10/18/2007US20070241358 LED package and method for producing the same
10/18/2007US20070241340 Micro-mirror based display device having an improved light source
10/18/2007US20070241337 Nitride semiconductor device
10/18/2007US20070241336 Thin film transistor
10/18/2007US20070241334 Thin film transistor, method of manufacturing the thin film transistor, and display device
10/18/2007US20070241332 Liquid crystal display device
10/18/2007US20070241331 Electroluminescent device and methods for fabricating the same
10/18/2007US20070241327 Fabrication methods of a ZnO thin film structure and a ZnO thin film transistor, and a ZnO thin film structure and a ZnO thin film transistor
10/18/2007US20070241326 Organic light emitting diode display and manufacturing method thereof
10/18/2007US20070241325 Schottky Gate Organic Field Effect Transistor and Fabrication Method of the Same
10/18/2007US20070241323 Trench-edge-defect-free recrystallization by edge-angle-optimized solid phase epitaxy: method and applications to hybrid orientation substrates
10/18/2007US20070241321 Light-emitting diode structure
10/18/2007US20070241320 Thin Film Electron Source
10/18/2007US20070241319 Phase change memory device having carbon nano tube lower electrode material and method of manufacturing the same
10/18/2007US20070241303 Thermally conductive composition and method for preparing the same
10/18/2007US20070241199 Semiconductor Device and Communication System
10/18/2007DE102007017002A1 SiC-Halbleiteranordnung und Verfahren zum Herstellen derselben SiC semiconductor device and method of manufacturing the same
10/18/2007DE102006017668A1 Verfahren zur Herstellung von Leistungshalbleiterbauteilen und Verwendung von Farbstoffen A process for the production of power semiconductor components and use of dyes
10/18/2007DE102006016049A1 Power semiconductor component, has charge carrier recombination zone with high temperature resistance in such a manner that recombination zone withstands locally when subjected to metallization process and/or soldering process
10/18/2007DE102005051573B4 MIM/MIS-Struktur mit Praseodymtitanat als Isolatormaterial MIM / MIS structure with Praseodymtitanat as an insulator material
10/18/2007DE102004028709B4 Vertikaldoppelkanal-Silicon-on-Insulator-Transistor und Verfahren zu seiner Herstellung Vertical double-channel silicon-on-insulator transistor and method for its preparation
10/17/2007EP1845561A2 Semiconductor device including a heterojunction diode and manufacturing method thereof
10/17/2007EP1844498A2 Method of fabricating a fet
10/17/2007EP1844493A1 Method for producing integrated circuits provided with silicon- germanium hetero-bipolar transistors
10/17/2007EP1738415A4 Pressure sensor device and method
10/17/2007EP1114460B1 Semiconductor chip with surface coating
10/17/2007EP1103074A4 Mosfet having self-aligned gate and buried shield and method of making same
10/17/2007EP0988651A4 Lateral diffused mos transistor with trench source contact
10/17/2007CN200962427Y Hetero-diameter fork semiconductor part
10/17/2007CN200962426Y Circle tray semiconductor part
10/17/2007CN200962425Y Overlapping fork semiconductor part
10/17/2007CN200962424Y Cathode fork semiconductor part
10/17/2007CN101057340A Semiconductor device and methods for the production thereof
10/17/2007CN101057339A 无定形氧化物和场效应晶体管 Amorphous oxide, and field-effect transistors
10/17/2007CN101057338A Field effect transistor employing an amorphous oxide
10/17/2007CN101057337A Passivation structure with voltage equalizing loops
10/17/2007CN101057336A Semiconductor devices and method of manufacturing them
10/17/2007CN101057335A Integrated high voltage power device having an edge termination of enhanced effectiveness
10/17/2007CN101057333A Light emitting device
10/17/2007CN101057329A 半导体器件 Semiconductor devices
10/17/2007CN101057325A Lead free alloys for column/ball grid arrays, organic interposers and passive component assembly
10/17/2007CN101057322A Dram transistor with a gate buried in the substrate and method of forming thereof
10/17/2007CN101055895A CaTiO3 structure La-Mn oxide/zinc oxide heterogeneous p-n junction and its making method
10/17/2007CN101055894A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
10/17/2007CN101055893A Nonvolatile semiconductor memory device and method of manufacturing the same
10/17/2007CN101055892A Thin film transistor and its making method
10/17/2007CN101055891A Wall embedded grid structure and its making method
10/17/2007CN101055880A Nonvolatile semiconductor memory device
10/17/2007CN101055879A Pixel structure, thin film transistor array base board and LCD panel
10/17/2007CN101055875A Nonvolatile semiconductor memory device and manufacturing method thereof
10/17/2007CN101055873A 半导体器件及其形成方法 Semiconductor device and method for forming
10/17/2007CN101055872A Semiconductor structure and its making method
10/17/2007CN101055853A Non-volatile semiconductor memory device and its making method
10/17/2007CN101055851A CMOS and its forming method
10/17/2007CN101055838A Method of fabricating a semiconductor device
10/17/2007CN101055384A 像素结构及其液晶显示面板 Pixel structure and LCD panel
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