Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2007
11/29/2007WO2007030349A3 Mems device and method of fabrication
11/29/2007WO2006135420A3 Method for simultaneous fabrication of a nanocrystal and non-nanocrystal device
11/29/2007WO2006078298A3 Spin-coatable liquid for formation of high purity nanotube films
11/29/2007WO2006025901A3 Device for subtracting or adding charge in a charge-coupled device
11/29/2007WO2005109501A3 ESD PROTECTION STRUCTURE WITH SiGe BJT DEVICES
11/29/2007WO2003071605A3 Semiconductor devices formed of iii-nitride compounds, lithium-niobate-tantalate, and silicon carbide
11/29/2007US20070276606 Full Spectrum Phosphor Blends for White Light Generation with Led Chips
11/29/2007US20070275508 Memory device with high dielectric constant gate dielectrics and metal floating gates
11/29/2007US20070275487 Free-standing electrostatically-doped carbon nanotube device and method for making same
11/29/2007US20070274126 Method And Apparatus For Hot Carrier Programmed One Time Programmable (Otp) Memory
11/29/2007US20070273813 Liquid crystal display and method of manufacturing the same
11/29/2007US20070273799 Liquid crystal display apparatus
11/29/2007US20070273476 Thin Semiconductor Device And Operation Method Of Thin Semiconductor Device
11/29/2007US20070273393 Capacitive sensor
11/29/2007US20070273275 Alloy type semiconductor nanocrystals and method for preparing the same
11/29/2007US20070273047 Printed wiring board and manufacturing method thereof
11/29/2007US20070273027 Method of forming dual damascene pattern
11/29/2007US20070273007 Bipolar-Transistor And Method For The Production Of A Bipolar-Transistor
11/29/2007US20070273006 Bipolar method and structure having improved bvceo/rcs trade-off made with depletable collector columns
11/29/2007US20070273005 Mim type capacitor
11/29/2007US20070273004 Like integrated circuit devices with different depth
11/29/2007US20070273003 Semiconductor device and manufacturing method thereof
11/29/2007US20070273002 Semiconductor Memory Devices Having Fuses and Methods of Fabricating the Same
11/29/2007US20070273001 System on chip and method for manufacturing the same
11/29/2007US20070273000 Trench widening without merging
11/29/2007US20070272999 Voltage Sustaining Layer with Opposite-Doped Islands for Semiconductor Power Devices
11/29/2007US20070272992 Method for fabricating condenser microphone and condenser microphone
11/29/2007US20070272991 Method And Device For Alternately Contacting Two Wafers
11/29/2007US20070272990 Diffusion tube, dopant source for a diffusion process and diffusion method using the diffusion tube and the dopant source
11/29/2007US20070272989 Semiconductor device and method for manufacturing the same
11/29/2007US20070272988 Voltage regulating apparatus
11/29/2007US20070272987 Non-volatile electrical phase change memory device comprising interfacial control layer and method for the preparation thereof
11/29/2007US20070272986 Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology
11/29/2007US20070272985 Stagger memory cell array
11/29/2007US20070272984 Semiconductor device manufacturing method and semiconductor device
11/29/2007US20070272981 CMOS image sensor and method for fabricating the same
11/29/2007US20070272980 Semiconductor device with vertical current flow and low substrate resistance and manufacturing process thereof
11/29/2007US20070272979 Semiconductor device
11/29/2007US20070272978 Semiconductor device including a vertical gate zone, and method for producing the same
11/29/2007US20070272977 Power semiconductor device
11/29/2007US20070272976 Power semiconductor module
11/29/2007US20070272974 Twin-gate non-volatile memory cell and method of operating the same
11/29/2007US20070272973 Semiconductor memory devices including recess-type control gate electrodes and methods of fabricating the semiconductor memory devices
11/29/2007US20070272972 Semiconductor memory device and manufacturing method thereof
11/29/2007US20070272971 Non-Volatile Memory Device and Method of Fabricating the Same
11/29/2007US20070272970 Non-volatile memory
11/29/2007US20070272969 Field-effect transistor
11/29/2007US20070272968 Semiconductor device and a method of manufacturing the same
11/29/2007US20070272967 Method for Modulating the Effective Work Function
11/29/2007US20070272966 Nonvolatile semiconductor memory device and method of fabricating the same
11/29/2007US20070272965 Method for producing a dielectric interlayer and storage capacitor with such a dielectric interlayer
11/29/2007US20070272964 Semiconductor device and method of manufacturing the same
11/29/2007US20070272963 Semiconductor device and method for fabricating the same
11/29/2007US20070272962 Semiconductor Device with L-Shaped Spacer and Method of Manufacturing the Same
11/29/2007US20070272960 Ferroelectric memory transistor with conductive oxide gate structure
11/29/2007US20070272959 Ferroelectric memory cell and manufacturing method thereof
11/29/2007US20070272957 Gallium nitride material devices and associated methods
11/29/2007US20070272956 Nonvolatile semiconductor memory
11/29/2007US20070272955 Reliable Contacts
11/29/2007US20070272954 FIN-FET device structure formed employing bulk semiconductor substrate
11/29/2007US20070272953 Power semiconductor component with charge compensation structure and method for producing the same
11/29/2007US20070272952 Electronic devices including a semiconductor layer
11/29/2007US20070272951 Nanoscopic wire-based devices and arrays
11/29/2007US20070272948 Inverter with dual-gate organic thin-film transistor
11/29/2007US20070272946 Silicon germanium emitter
11/29/2007US20070272945 Field-effect transistor
11/29/2007US20070272944 Semiconductor member, manufacturing method thereof, and semiconductor device
11/29/2007US20070272942 Semiconductor device and method of manufacturing the same
11/29/2007US20070272941 Method For Producing III Group Element Nitride Crystal, Production Apparatus For Use Therein, And Semiconductor Element Produced Thereby
11/29/2007US20070272937 Nitride semiconductor light emitting device
11/29/2007US20070272936 Nitride based light emitting device
11/29/2007US20070272932 Light-emitting diode with improved ultraviolet light protection
11/29/2007US20070272929 Diamond N-Type Semiconductor, Method of Manufacturing the Same, Semiconductor Device, and Electron Emitting Device
11/29/2007US20070272928 Thin film transistor, array substrate having the thin film transistor and method of manufacturing the array substrate
11/29/2007US20070272927 Thin film transistor, method of manufacturing the thin film transistor, active matrix type display device, and method of manufacturing the active matrix type display device
11/29/2007US20070272926 Tft lcd array substrate and manufacturing method thereof
11/29/2007US20070272925 Semiconductor Device Having Multi-Gate Structure and Method of Manufacturing the Same
11/29/2007US20070272922 ZnO thin film transistor and method of forming the same
11/29/2007US20070272919 Stressed organic semiconductor devices
11/29/2007US20070272918 Organic photosensitive devices using subphthalocyanine compounds
11/29/2007US20070272916 Flash memory with deep quantum well and high-K dielectric
11/29/2007US20070272914 Group-iii nitride vertical-rods substrate
11/29/2007US20070272759 Limiter and semiconductor device using the same
11/29/2007US20070272653 Method for Orientation Treatment of Electronic Functional Material and Thin Film Transistor
11/29/2007US20070272016 Acceleration sensor
11/29/2007DE112006000175T5 Graben Schottky-Sperrschichtdiode mit unterschiedlicher Oxiddicke Trench Schottky barrier diode with different oxide thickness
11/29/2007DE10206057B4 Nichtflüchtiges Speicherbauelement und Verfahren zu seiner Herstellung A non-volatile memory device and method for its preparation
11/29/2007DE102006058324A1 Feldeffekttransistor Field-effect transistor
11/29/2007DE102006034678B3 Power semiconductor device e.g. insulated gate bipolar transistor device, has semiconductor element with drift distance between zone and substrate range, and zone sections with trench structures that are filled with semiconductor material
11/29/2007DE102006024850A1 Halbleiterbauelement und Gleichrichteranordnung Semiconductor device and rectifier arrangement
11/29/2007DE102006024504A1 Insulated-gate bipolar transistor power semiconductor component for frequency converter module, has dopant zone with higher impurity concentration arranged distant from base of trench structure and in space charge area of p-n junction
11/29/2007DE102006002065B4 Kompensationsbauelement mit reduziertem und einstellbarem Einschaltwiderstand Compensation component with reduced on-resistance and adjustable
11/29/2007DE102004011234B4 Verfahren zur Verringerung der Zündempfindlichkeit eines Thyristors A method for reducing the ignitability of a thyristor
11/29/2007DE10122839B4 Verfahren zum Vereinzeln von Halbleiterstrukturen sowie zum Vereinzeln vorbereitetes Halbleitersubstrat A method for separating semiconductor structures, as well as for separating prepared semiconductor substrate
11/29/2007DE10005536B4 Sensor mit eingebauten Schaltungen Sensor with integrated circuits
11/29/2007CA2654256A1 A cmos linear voltage/current dual-mode imager
11/29/2007CA2651670A1 Semiconductor devices including self aligned refractory contacts and methods of fabricating the same
11/29/2007CA2622750A1 N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor
11/28/2007EP1860687A2 SONOS memory device
11/28/2007EP1860686A2 Semiconductor memory device having a recess-type control gate electrode and method of fabricating the semiconductor memory device
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