Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2007
11/22/2007US20070267690 DMOSFET with current injection
11/22/2007US20070267689 One-transistor composite-gate memory
11/22/2007US20070267688 SONOS memory device having nano-sized trap elements
11/22/2007US20070267687 Bandgap engineered split gate memory
11/22/2007US20070267686 System and method for reducing process-induced charging
11/22/2007US20070267685 Nonvolatile semiconductor memory and method of manufacturing the same
11/22/2007US20070267684 Non-volatile memory integrated circuit device and method of fabricating the same
11/22/2007US20070267683 Nonvolatile memory cell of a circuit integrated in a semiconductor chip, method for producing the same, and application of a nonvolatile memory cell
11/22/2007US20070267682 Semiconductor device and method of manufacturing same
11/22/2007US20070267681 Semiconductor device and method of manufacturing the same
11/22/2007US20070267680 Semiconductor integrated circuit device
11/22/2007US20070267679 Nonvolatile memory devices including floating gates formed of silicon nano-crystals and methods of manufacturing the same
11/22/2007US20070267678 MOS devices with corner spacers
11/22/2007US20070267677 Single poly non-volatile memory device with inversion diffusion regions and methods for operating the same
11/22/2007US20070267676 Fin field effect transistor and method for forming the same
11/22/2007US20070267675 Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same
11/22/2007US20070267674 1T MIM memory for embedded ram application in soc
11/22/2007US20070267673 Adjustable on-chip sub-capacitor design
11/22/2007US20070267672 Semiconductor device and method for manufacturing same
11/22/2007US20070267671 Trench capacitor having lateral extensions in only one direction and related methods
11/22/2007US20070267670 Integrated Circuit With A Trench Capacitor Structure And Method Of Manufacture
11/22/2007US20070267669 Phase-changeable memory device and method of manufacturing the same
11/22/2007US20070267667 Programmable resistive memory cell with a programmable resistance layer
11/22/2007US20070267664 Semiconductor device and method of manufacturing the same
11/22/2007US20070267663 Semiconductor device having improved insulated gate bipolar transistor and method for manufacturing the same
11/22/2007US20070267662 N-channel TFT and OLED display apparatus and electronic device using the same
11/22/2007US20070267660 Method and apparatus for forming a semiconductor substrate with a layer structure of activated dopants
11/22/2007US20070267655 Semiconductor device having MIS structure and its manufacture method
11/22/2007US20070267652 Field-effect transistor
11/22/2007US20070267635 Thin film transistor
11/22/2007US20070267634 Hybrid strained orientated substrates and devices
11/22/2007US20070267633 Flat panel display device and method for fabricating same
11/22/2007US20070267630 Method of manufacturing organic thin film transistor and organic thin film transistor
11/22/2007US20070267629 Laser irradiation device and method of fabricating oled using the same
11/22/2007US20070267627 Organic memory device and fabrication method thereof
11/22/2007US20070267626 Semiconductor structure
11/22/2007US20070267624 Multi-functional chalcogenide electronic devices having gain
11/22/2007US20070267623 Multi-functional electronic devices
11/22/2007US20070267619 Memory using tunneling field effect transistors
11/22/2007US20070267618 Memory device
11/22/2007US20070267286 Increasing an electrical resistance of a resistor by oxidation or nitridization
11/22/2007US20070266784 Chip scale atomic gyroscope
11/22/2007DE112005003290T5 Polymerverbindung und Vorrichtung unter Verwendung derselben Polymer compound and device using the same
11/22/2007DE10223699B4 MOS-Transistoreinrichtung vom Trenchtyp MOS transistor device of the trench type
11/22/2007DE102007021000A1 Halbleiteranordnungen und Verfahren zur Herstellung derselben Semiconductor devices and methods of manufacturing the same
11/22/2007DE102006061594A1 Flüssigkristallanzeigevorrichtung und Herstellungsverfahren A liquid crystal display device and manufacturing method
11/22/2007DE102006055068A1 Halbleitervorrichtung mit verbessertem Bipolartransistor mit isoliertem Gate und Verfahren zu ihrer Herstellung A semiconductor device with an improved insulated gate bipolar transistor, and methods for their preparation
11/22/2007DE102006023731A1 Semiconductor structure, has low trench passing into semiconductor substrate and electrically insulating buried layer, and low impedance contact formed in low trench of insulation trench for contacting buried layer
11/22/2007DE102005031836B4 Halbleiterleistungsmodul mit SiC-Leistungsdioden und Verfahren zur Herstellung desselben The semiconductor power module of the same with SiC power diode and methods for preparing
11/22/2007DE10058031B4 Verfahren zur Bildung leicht dotierter Halogebiete und Erweiterungsgebiete in einem Halbleiterbauelement A method of forming lightly doped regions Halo and extension regions in a semiconductor device
11/22/2007DE10026742B4 In beide Richtungen sperrendes Halbleiterschaltelement In both directions blocking semiconductor switching element
11/21/2007EP1858088A1 Nitride semiconductor device and method of growing nitride semiconductor crystal layer
11/21/2007EP1858085A2 Semiconductor device
11/21/2007EP1858084A2 Method of manufacturing quantum dots in a semiconductor device
11/21/2007EP1858073A1 Semiconductor integrated circuit, semiconductor integrated circuit control method, and signal transmission circuit
11/21/2007EP1858066A2 Semiconductor devices
11/21/2007EP1857488A1 Highly heat-resistant synthetic polymer compound and high withstand voltage semiconductor device
11/21/2007EP1856745A2 Systems and methods for producing white-light light emitting diodes
11/21/2007EP1856743A2 Power mos device
11/21/2007EP1856742A2 Carbon nanotube resonator transistor and method of making the same
11/21/2007EP1856741A1 Electrostatically regulated atomic scale electroconductivity device
11/21/2007EP1856740A1 Enhanced pfet using shear stress
11/21/2007EP1856735A2 Low k dielectric cvd film formation process with in-situ imbedded nanolayers to improve mechanical properties
11/21/2007EP1856731A1 Integrated circuit and method for its manufacture
11/21/2007EP1856725A1 Self-forming metal silicide gate for cmos devices
11/21/2007EP1856719A2 Boron-doped diamond semiconductor
11/21/2007EP1747588B1 Illuminable gaas switching component with a transparent housing, and microwave circuit therewith
11/21/2007EP1692724A4 Semiconductor memory device with increased node capacitance
11/21/2007EP1514304B1 Method for the production of an nrom memory cell arrangement
11/21/2007EP1446355A4 Family of discretely sized silicon nanoparticles and method for producing the same
11/21/2007EP1374291B1 Deposition method over mixed substrates using trisilane
11/21/2007CN200979885Y A power device with anti-explosion device
11/21/2007CN200979882Y A plane power device with single silicon and double metal layers
11/21/2007CN101076896A Method for forming substrate in bicmos technology
11/21/2007CN101076894A Semiconductor device and manufacturing method therefor
11/21/2007CN101076891A Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure
11/21/2007CN101076887A Electronic tag chip
11/21/2007CN101076882A Bidirectional field-effect transistor and matrix converter
11/21/2007CN101075643A Nonvolatile memory unit and method for operating the same
11/21/2007CN101075642A Thin film transistor, method of manufacturing the thin film transistor, and display substrate having the thin film transistor
11/21/2007CN101075641A N tunnel film transistor and display device and electronic component using the same transistor
11/21/2007CN101075640A Glass baseplate surface metal-layer structure and its production
11/21/2007CN101075639A Semiconductor device and fabricating method thereof
11/21/2007CN101075638A Semiconductor device and method for fabricating the same
11/21/2007CN101075637A Field effect transistor based on borate-carbon-nitrogen nano-material and its production
11/21/2007CN101075636A Ferroelectric field effect transistor based on semiconductor nano-material and its production
11/21/2007CN101075622A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
11/21/2007CN101075621A Semiconductor device and its manufacturing method
11/21/2007CN101075616A Wire-type semiconductor device and method of fabricating the same
11/21/2007CN101075581A Integrated field-effect transistor and schottky component and manufacturing method thereof
11/21/2007CN101075573A Insulator with silica structure and manufacturing method thereof
11/21/2007CN101075563A Structure and method for forming semiconductor component
11/21/2007CN101075555A System for displaying image and method for laser annealing cryogenic polycrystalline silicon
11/21/2007CN101075051A Liquid crystal display device and semiconductor device
11/21/2007CN101075029A Liquid-crystal display panel
11/21/2007CN100350638C Nitride semiconductor and fabrication method thereof
11/21/2007CN100350632C Semiconductor display device
11/21/2007CN100350629C Semiconductor element and multicrystalline silicon thin film transistor there of and its producing method
11/21/2007CN100350628C Semiconductor element and display device using same
11/21/2007CN100350627C Semiconductor device and its mfg. method
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