H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2007
10/25/2007	US20070246763 Trench step channel cell transistor and manufacture method thereof
10/25/2007	US20070246762 Semiconductor device including a TCAM having a storage element formed
10/25/2007	US20070246761 Electrical lapping guides made from tunneling magnetoresistive (tmr) material
10/25/2007	US20070246755 Method for fabricating recessed gate mos transistor device
10/25/2007	US20070246754 Semiconductor Device and Method for Manufacture
10/25/2007	US20070246753 Metal gated ultra short MOSFET devices
10/25/2007	US20070246752 Semiconductor device structures with reduced junction capacitance and drain induced barrier lowering and methods for fabricating such device structures and for fabricating a semiconductor-on-insulator substrate
10/25/2007	US20070246751 Spacer structure and fabrication method thereof
10/25/2007	US20070246750 Control of body potential of partially-depleted field-effect transistors
10/25/2007	US20070246749 Solution of power consumption reduction for inverter covered by metal case
10/25/2007	US20070246748 Phase change memory cell with limited switchable volume
10/25/2007	US20070246747 Image display apparatus
10/25/2007	US20070246742 Method of Manufacturing a Strained Semiconductor Layer, Method of Manufacturing a Semiconductor Device and Semiconductor Substrate Suitable for Use in Such a Method
10/25/2007	US20070246741 Stress relaxation for top of transistor gate
10/25/2007	US20070246740 Transistor with increased esd robustness and related layout method thereof
10/25/2007	US20070246739 Semiconductor device and method of manufacturing the same
10/25/2007	US20070246738 Semiconductor device and method of manufacturing the same
10/25/2007	US20070246737 Electrostatic discharge protection apparatus for integrated circuits
10/25/2007	US20070246725 Semiconductor display device
10/25/2007	US20070246723 Method for forming film pattern, method for manufacturing active matrix substrate, device, electro-optical device and electronic apparatus
10/25/2007	US20070246721 Semiconductor component having a curved mirror and method for producing a semiconductor component having a curved semiconductor body
10/25/2007	US20070246710 Semiconductor Device and Method of Manufacturing Same
10/25/2007	US20070246709 Thin film semiconductor device
10/25/2007	US20070246708 Semiconductor device
10/25/2007	US20070246707 Thin film transistor liquid crystal display array substrate and manufacturing method thereof
10/25/2007	US20070246706 Electronic circuit with repetitive patterns formed by shadow mask vapor deposition and a method of manufacturing an electronic circuit element
10/25/2007	US20070246702 Fabrication of Active Areas of Different Natures Directly Onto an Insulator: Application to the Single or Double Gate Mos Transistor
10/25/2007	US20070246701 Generating Multiple Bandgaps Using Multiple Epitaxial Layers
10/25/2007	US20070246700 Light Emitting Device and Method of Manufacturing the Same
10/25/2007	US20070246699 Phase change memory cell with vacuum spacer
10/25/2007	DE112004003004T5 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
10/25/2007	DE10345186B4 Verfahren zur Herstellung eines Metall-Oxid-Halbleiter Feldeffekttransistors und Metall-Oxid-Halbleiter Feldeffekttransistor A method for producing a metal-oxide-semiconductor field-effect transistor and metal oxide semiconductor field effect transistor
10/25/2007	DE102007017833A1 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation
10/25/2007	DE102007015942A1 Siliziumcarbid-Halbleitervorrichtung und Herstellungsverfahren derselben Silicon carbide semiconductor device and manufacturing method thereof
10/25/2007	DE102007007807A1 Halbleiterelement Semiconductor element
10/25/2007	DE102006018765A1 Leistungshalbleiterbauelement, Leistungshalbleiterbauteil sowie Verfahren zu deren Herstellung Power semiconductor device, power semiconductor device and process for their preparation
10/25/2007	DE102006009226A1 Transistor mit einer erhöhten Schwellwertstabilität ohne Durchlassstrombeeinträchtigung Transistor with an increased Schwellwertstabilität without let-through current impairment
10/25/2007	DE102005022575B4 Nichtflüchtiges Halbleiterspeicherbauelement mit floatender Gateelektrode Nonvolatile semiconductor memory device having a floating gate electrode
10/25/2007	DE102004026100B4 ESD-Schutzstrukturen für Halbleiterbauelemente ESD protection structures for semiconductor devices
10/25/2007	CA2647105A1 Quantum dot switching device
10/24/2007	EP1848041A1 Amorphous silicon thin film transistor and organic light-emitting display having the same
10/24/2007	EP1848040A1 Semiconductor element
10/24/2007	EP1848039A2 Complementary mis device
10/24/2007	EP1847850A2 Hydrophone assembly
10/24/2007	EP1847544A1 Novel condensed polycyclic aromatic compound and use thereof
10/24/2007	EP1846955A2 High-performance fet devices and methods
10/24/2007	EP1846953A2 Integrated circuit including power diode
10/24/2007	EP1846947A1 Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow
10/24/2007	EP1846596A2 Method of making substitutionally carbon-highly doped crystalline si-layers by cvd
10/24/2007	EP1846595A1 Selective deposition of silicon-containing films
10/24/2007	EP1779435A4 Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same
10/24/2007	EP1642343A4 Oblique deposition to induce magnetic anisotropy for mram cells
10/24/2007	EP1535334B1 Word and bit line arrangement for a finfet semiconductor memory
10/24/2007	EP1192666B1 Memory cell arrangement
10/24/2007	CN200965883Y In-line plug-in type semiconductor device
10/24/2007	CN101061587A Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor
10/24/2007	CN101061586A Gate structure and method for making same
10/24/2007	CN101061585A Scalable integrated logic and non-volatile memory
10/24/2007	CN101061584A An electrically programmable fuse for silicon-on-insulator(SOI) technology
10/24/2007	CN101061579A Semiconductor memory and its making method
10/24/2007	CN101060141A MIM structure and method of forming same
10/24/2007	CN101060140A Thin film transistor, active matrix type display device, and manufacturing method thereof
10/24/2007	CN101060139A Amorphous zinc oxide thin film transistor and method of manufacturing the same
10/24/2007	CN101060138A Amorphous silicon thin film transistor and organic light-emitting display having the same
10/24/2007	CN101060137A Thin film transistor and its manufacture method
10/24/2007	CN101060136A A double-fin channel wrap gate field-effect transistor and its manufacture method
10/24/2007	CN101060135A A double silicon nanowire wrap gate field-effect transistor and its manufacture method
10/24/2007	CN101060134A MOSFET device and its making method
10/24/2007	CN101060133A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
10/24/2007	CN101060132A Semiconductor device and manufacturing method thereof
10/24/2007	CN101060121A Semiconductor structure and its manufacture method
10/24/2007	CN101060119A An integral circuit structure and its manufacture method
10/24/2007	CN101060098A A canal step channel unit transistor and its manufacture method
10/24/2007	CN101060082A Semiconductor structure and its manufacture method
10/24/2007	CN101060081A Silicon carbide semiconductor device and manufacturing method thereof
10/24/2007	CN101060071A Method for forming film pattern, and method for manufacturing active matrix substrate
10/24/2007	CN101059629A Pixel structure, positive element array substrate and liquid crystal display panel
10/24/2007	CN101059608A Multiple-domain liquid crystal display
10/24/2007	CN101059530A Motion sensor and method of manufacturing the same
10/24/2007	CN100345310C Thin-film transistor and method for making same
10/24/2007	CN100345309C Semiconductor film, mfg. method of same, semiconductor device and mfg. method of same
10/24/2007	CN100345308C Semiconductor device its making method
10/24/2007	CN100345307C Semiconductor device and its manufacturing method
10/24/2007	CN100345306C Misfet
10/24/2007	CN100345305C Double-gate substrate danamic RAM cell array
10/24/2007	CN100345302C Structure and manufacture of complementary metal-semiconductor image sensor
10/24/2007	CN100345301C Integrated transistor and its manufacture
10/24/2007	CN100345298C Semiconductor chips and semiconductor components and their forming methods
10/24/2007	CN100345284C Method of manufacturing bi ONO type SONOS storage using reverse direction self-aligning process
10/24/2007	CN100345280C Deformed channel transistor structure with asymmetrical lattice area and its manufacture
10/24/2007	CN100345265C Structure and method for silicided metal gate transistors
10/24/2007	CN100345261C Method for producing semiconductor integrated circuit device
10/24/2007	CN100345254C Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition
10/24/2007	CN100345246C Method for producing silicon-germanium backing material on insulator and said substrate
10/24/2007	CN100345170C Reflection liquid crystal back board structure and mfg. method thereof
10/24/2007	CN100345053C Thin film transistor substrate using a horizontal electric field and fabricating method thereof
10/24/2007	CN100345052C Liquid crystal display panel
10/23/2007	US7286573 Conversion of type of quantum well structure
10/23/2007	US7286404 Non-volatile semiconductor memory adapted to store a multi-valued data in a single memory cell
10/23/2007	US7286401 Nonvolatile semiconductor memory device

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