Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2007
12/06/2007US20070278553 Semiconductor device and fabrication thereof
12/06/2007US20070278551 Metal-insulator-metal capacitors
12/06/2007US20070278550 Semiconductor device and method for manufacturing the same
12/06/2007US20070278549 Integrated Circuit with a Transistor Structure Element
12/06/2007US20070278547 MRAM synthetic anitferomagnet structure
12/06/2007US20070278546 Memory cell array and method of forming a memory cell array
12/06/2007US20070278545 Ferroelectric capacitor, method of manufacturing ferroelectric capacitor, and ferroelectric memory
12/06/2007US20070278542 Semiconductor device and fabricating method thereof
12/06/2007US20070278541 Spacer engineering on CMOS devices
12/06/2007US20070278540 Vertical Junction Field Effect Transistors, and Methods of Producing the Vertical Junction Field Effect Transistors
12/06/2007US20070278539 Junction field effect transistor and method for manufacture
12/06/2007US20070278538 Phase change memory cell
12/06/2007US20070278537 Image sensor having reset transistor
12/06/2007US20070278536 Solid state image pickup device and operating method thereof
12/06/2007US20070278534 Low crosstalk, front-side illuminated, back-side contact photodiode array
12/06/2007US20070278532 Field-Effect Transistor, Semiconductor Device, a Method for Manufacturing Them, and a Method of Semiconductor Crystal Growth
12/06/2007US20070278531 Semiconductor flash memory device and method of fabricating the same
12/06/2007US20070278530 Memory device, in particular phase change random access memory device with transistor, and method for fabricating a memory device
12/06/2007US20070278527 Complementary Misfet And Integrated Circuit
12/06/2007US20070278523 Structure and a method for monolithic integration of HBT, depletion-mode HEMT and enhancement-mode HEMT on the same substrate
12/06/2007US20070278515 Silicon controlled rectifier protection circuit
12/06/2007US20070278514 Semiconductor Component Comprising A Temporary Field Stopping Area, And Method For The Production Thereof
12/06/2007US20070278507 Field effect transistor and method for fabricating the same
12/06/2007US20070278499 Nitride-based semiconductor light emitting diode
12/06/2007US20070278495 Thin film transistor formed on flexible substrate and method of manufacturing the same
12/06/2007US20070278494 Single-crystal layer on a dielectric layer
12/06/2007US20070278493 Light-emitting element and display device
12/06/2007US20070278492 Thin film transistor array panel and method of manufacturing the same
12/06/2007US20070278491 Spacing architecture for liquid crystal display and spacing method thereof
12/06/2007US20070278490 Semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing and manufacturing method thereof
12/06/2007US20070278488 Electro-optical device and electronic apparatus
12/06/2007US20070278483 Light emitting device and method of manufacturing the same
12/06/2007US20070278482 Organic memory devices including organic material and fullerene layers and related methods
12/06/2007US20070278480 Organic light emitting display and method of manufacturing the same
12/06/2007US20070278475 Semiconductor light-emitting device
12/06/2007US20070278473 Light emitting device and method of manufacturing the same
12/06/2007US20070278472 Soft Switching Semiconductor Component with High Robustness and Low Switching Losses
12/06/2007US20070278471 Novel chalcogenide material, switching device and array of non-volatile memory cells
12/06/2007US20070278469 Component containing a baw filter
12/06/2007US20070277872 Titanium Oxide With A Rutile Structure
12/06/2007DE10303942B4 Herstellungsverfahren für eine PN-Sperrschicht-Diodenvorrichtung, und eine PN-Sperrschicht-Diodenvorrichtung Manufacturing method of a PN junction diode device, and a PN-junction diode device
12/06/2007DE102006056139A1 Halbleitervorrichtung mit einem verbesserten Aufbau für eine hohe Spannungsfestigkeit A semiconductor device having an improved structure for a high withstand voltage
12/06/2007DE102006025218A1 Leistungshalbleiterbauelement mit Ladungskompensationsstruktur und Verfahren zur Herstellung desselben Power semiconductor component thereof having charge compensation structure and method for producing
12/06/2007DE102006025135A1 Semiconductor component has semi-insulating passivation layer, which is arranged in sections on surface of semiconductor body, where passivation layer has two sections separated from each other
12/06/2007DE102006023607A1 Seitenwand-Distanzstruktur, Verfahren zur Ausbildung von Seitenwand-Distanzstrukturen und Feldeffekttransistoren sowie Strukturierungsverfahren Sidewall spacer structure, methods of forming sidewall spacer and field effect transistors and patterning methods
12/06/2007DE102005000997B4 Integrierte Halbleiterschaltungen mit gestapelten Knotenkontaktstrukturen und Verfahren zum Herstellen solcher Vorrichtungen Integrated semiconductor circuits stacked with node contact structures and methods for making such devices
12/06/2007DE10163557B4 Transistorbasierter Sensor mit besonders ausgestalteter Gateelektrode zur hochempfindlichen Detektion von Analyten Transistor-based sensor with particularly Enriched gate electrode for highly sensitive detection of analytes
12/05/2007EP1863141A1 External resonance type semiconductor laser
12/05/2007EP1863097A1 Method for modulating the effective work function
12/05/2007EP1863096A1 Semiconductor device and method of manufacturing the same
12/05/2007EP1863075A1 Group iii nitride semiconductor device and epitaxial substrate
12/05/2007EP1863072A1 Method for modulating the effective work function
12/05/2007EP1861884A2 Metal silicate-silica-based polymorphous phosphors and lighting devices
12/05/2007EP1474836A4 Deposition method for nanostructure materials
12/05/2007EP1371089B1 Fabrication method of soi semiconductor devices
12/05/2007EP1258033B1 Tungsten gate electrode method
12/05/2007EP1046195B1 Thin film transistors
12/05/2007EP0784867B1 Method of manufacturing a vertical non-volatile memory cell
12/05/2007CN200986921Y Overpressure resistant layer structure and SOI power device with dual-medium buried layer
12/05/2007CN200986920Y Dual-medium SOI overpressure resistant structure with windows and SOI power device thereof
12/05/2007CN200986919Y Vertical type self-aligning suspension drain triode
12/05/2007CN101084616A 无线芯片 Wireless chip
12/05/2007CN101084581A Semiconductor device with a superparaelectric gate insulator
12/05/2007CN101083286A Nonvolatile semiconductor memory device
12/05/2007CN101083285A 半导体器件 Semiconductor devices
12/05/2007CN101083284A Semiconductor device having trench charge compensation regions and method
12/05/2007CN101083283A Semiconductor device and method for manufacturing same
12/05/2007CN101083282A Semiconductor device having sub-surface trench charge compensation regions and method
12/05/2007CN101083281A Semiconductor device with bulb recess and saddle fin and method of manufacturing the same
12/05/2007CN101083280A Semiconductor device and method for producing the same
12/05/2007CN101083279A 半导体装置 Semiconductor device
12/05/2007CN101083278A Pressure resistant layer structure having dual-medium buried layer and SOI power device using the same
12/05/2007CN101083269A Thin film transistor substrate and display device
12/05/2007CN101083258A 半导体器件 Semiconductor devices
12/05/2007CN101083255A Device package and methods for the fabrication and testing thereof
12/05/2007CN101083209A Flash memory cell with self-aligned gates and fabrication process
12/05/2007CN101082743A 画素结构 Pixel structure
12/05/2007CN100353752C Amplifying solid-state image pickup device and driving method therefor
12/05/2007CN100353568C Variable capacitor and differential variable capacitor
12/05/2007CN100353567C Method of manufacturing variable capacitor
12/05/2007CN100353566C Silicon layer structure with transformation particle size and method for forming the same structure by thermal technology
12/05/2007CN100353565C Thin-film transistor element and manufacturing method thereof
12/05/2007CN100353564C Process for ultra-thin body soi devices that incorporate epi silicon tips and article made thereby
12/05/2007CN100353563C High voltage resistant semiconductor device and method for manufacturing said device
12/05/2007CN100353562C Structure for and method of fabricating a high-mobility field-effect transistor
12/05/2007CN100353561C Metal-over-metal devices and the method for manufacturing same
12/05/2007CN100353556C Nonvolatile semiconductor memory device and method of manufacturing the same
12/05/2007CN100353554C Standard cell back bias architecture
12/05/2007CN100353547C Multi-chip circuit module and method for producing the same
12/05/2007CN100353540C Contact structure of semiconductor device and method of manufacturing the same
12/05/2007CN100353530C Method for producing semiconductor assenbly on SOI wafer
12/05/2007CN100353527C Method for producing elements with memory cells and memory cell array
12/05/2007CN100353526C Low power flash memory cell and method
12/05/2007CN100353511C Method for mfg. amorphous silicon film electric crystal of organic electricity excitation light
12/05/2007CN100353510C Insulation grid film transistor and control system thereof
12/05/2007CN100353509C Structure of Schottky diode and method for manufacturing same
12/05/2007CN100353507C Pattern formation substrate and method of pattern formation
12/05/2007CN100353498C Semiconductor device and method for manufacturing same
12/05/2007CN100353497C Method of fabrication of semiconductor device
12/05/2007CN100353494C Improvement for ESD transistor source leaked capacitance