H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2007
11/13/2007	US7294908 Method of forming a gate pattern in a semiconductor device
11/13/2007	US7294907 Solid-state imaging device and method for manufacturing the same
11/13/2007	US7294906 Wiring technique
11/13/2007	US7294905 Thin film capacitor and electronic circuit component
11/13/2007	US7294902 Trench isolation having a self-adjusting surface seal and method for producing one such trench isolation
11/13/2007	US7294901 Semiconductor device with improved resurf features including trench isolation structure
11/13/2007	US7294900 Compound semiconductor device and manufacturing method thereof
11/13/2007	US7294898 Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate
11/13/2007	US7294895 Capacitive dynamic quantity sensor and semiconductor device
11/13/2007	US7294894 Micromechanical cap structure and a corresponding production method
11/13/2007	US7294893 Titanium silicide boride gate electrode
11/13/2007	US7294892 Multi-transistor layout capable of saving area
11/13/2007	US7294891 Semiconductor integrated circuit having transistors formed on an insulating substrate
11/13/2007	US7294890 Fully salicided (FUSA) MOSFET structure
11/13/2007	US7294889 Semiconductor device having a well structure for improving soft error rate immunity and latch-up immunity and a method of making such a device
11/13/2007	US7294888 CMOS-compatible non-volatile memory cell with lateral inter-poly programming layer
11/13/2007	US7294887 Semiconductor device comprising thin film transistor
11/13/2007	US7294886 Power semiconductor device
11/13/2007	US7294885 Reverse blocking semiconductor component with charge compensation
11/13/2007	US7294884 Passivation of power semiconductor device
11/13/2007	US7294883 Nonvolatile memory cells with buried channel transistors
11/13/2007	US7294882 Non-volatile memory with asymmetrical doping profile
11/13/2007	US7294881 Nonvolatile semiconductor memory having a charge accumulation layer connected to a gate
11/13/2007	US7294880 Semiconductor non-volatile memory cell with a plurality of charge storage regions
11/13/2007	US7294879 Vertical MOSFET with dual work function materials
11/13/2007	US7294878 Semiconductor memory device and method of manufacturing the same
11/13/2007	US7294877 Nanotube-on-gate FET structures and applications
11/13/2007	US7294876 FeRAM device and method for manufacturing the same
11/13/2007	US7294875 Nanoscale programmable structures and methods of forming and using same
11/13/2007	US7294874 Laser irradiation method, method for manufacturing a semiconductor device, and a semiconductor device
11/13/2007	US7294872 Solid state image pickup device and its manufacture method
11/13/2007	US7294871 Top layers of metal for high performance IC's
11/13/2007	US7294870 Top layers of metal for high performance IC's
11/13/2007	US7294869 Silicon germanium emitter
11/13/2007	US7294868 Super lattice tunnel junctions
11/13/2007	US7294867 Semiconductor light generating device
11/13/2007	US7294866 Flip-chip light-emitting device with micro-reflector
11/13/2007	US7294862 Photonic crystal light emitting device
11/13/2007	US7294860 Monolithic vertical junction field effect transistor and Schottky barrier diode fabricated from silicon carbide and method for fabricating the same
11/13/2007	US7294859 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
11/13/2007	US7294858 Semiconductor device and method of manufacturing the same
11/13/2007	US7294857 Polysilicon thin film transistor array panel and manufacturing method thereof
11/13/2007	US7294856 Electro-optical device and electronic apparatus
11/13/2007	US7294855 Contact structure of semiconductor device, manufacturing method thereof, thin film transistor array panel including contact structure, and manufacturing method thereof
11/13/2007	US7294854 Thin film transistor array panel and liquid crystal display including the panel
11/13/2007	US7294851 Dense seed layer and method of formation
11/13/2007	US7294848 Light-emitting Group IV semiconductor devices
11/13/2007	US7294606 Substrate and method for the formation of continuous magnesium diboride and doped magnesium diboride wire
11/13/2007	US7294577 Method of manufacturing a silicide layer
11/13/2007	US7294564 Method for forming a layered semiconductor technology structure and corresponding layered semiconductor technology structure
11/13/2007	US7294562 Semiconductor substrate, method of manufacturing the same, semiconductor device, and method of manufacturing the same
11/13/2007	US7294551 Semiconductor device and method for manufacturing the same
11/13/2007	US7294550 Method of fabricating metal oxide semiconductor device
11/13/2007	US7294549 Vertical floating gate transistor
11/13/2007	US7294538 Method of polycrystallization, method of manufacturing polysilicon thin film transistor, and laser irradiation device therefor
11/13/2007	US7294537 Method of fabricating thin film transistor with multiple gates using super grain silicon crystallization
11/13/2007	US7294536 Process for manufacturing an SOI wafer by annealing and oxidation of buried channels
11/13/2007	US7294526 Nano optical sensors via molecular self-assembly
11/13/2007	US7294202 Process for manufacturing self-assembled nanoparticles
11/13/2007	US7294200 Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device
11/13/2007	US7294198 Process for producing single-crystal gallium nitride
11/13/2007	US7294155 Coating apparatus, thin film forming method, thin film forming apparatus, and semiconductor device manufacturing method, electro-optic device and electronic instrument
11/13/2007	CA2199948C Self-aligned field-effect transistor for high frequency applications
11/08/2007	WO2007127779A2 Semiconductor device with improved contact fuse
11/08/2007	WO2007127769A2 High performance 3d fet structures, and methods for forming the same using preferential crystallographic etching
11/08/2007	WO2007127523A2 Charge storage structure formation in transistor with vertical channel region
11/08/2007	WO2007126907A1 Semiconductor device comprising soi transistors and bulk transistors and a method of forming the same
11/08/2007	WO2007126807A1 An soi transistor having a reduced body potential and a method of forming the same
11/08/2007	WO2007126679A2 Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
11/08/2007	WO2007126541A1 High efficiency and/or high power density wide bandgap transistors
11/08/2007	WO2007126495A1 Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regions
11/08/2007	WO2007126177A1 Process for preparing nanogap electrode and nanogap device using the same
11/08/2007	WO2007125950A1 Organic semiconductor thin film and organic semiconductor device
11/08/2007	WO2007125899A1 Organic thin-film transistor
11/08/2007	WO2007125841A1 Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having the semiconductor device
11/08/2007	WO2007125811A1 Organic semiconductor film and organic thin film transistor
11/08/2007	WO2007125671A1 Field effect transistor
11/08/2007	WO2007125617A1 Semiconductor device and process for producing the same
11/08/2007	WO2007125346A1 Semiconductor device for generating an oscillating voltage
11/08/2007	WO2007092867A3 Semiconductor device fabricated using a raised layer to silicide the gate
11/08/2007	WO2007035182A3 Field enhanced electrodes for additive-injection non-thermal plasma (ntp) processor
11/08/2007	WO2005074494A3 Improved diode energy converter for chemical kinetic electron energy transfer
11/08/2007	US20070261140 Carbon nanotube arrays for field electron emission and methods of manufacture and use
11/08/2007	US20070259639 Multi-standard module integration
11/08/2007	US20070259518 Method and apparatus for diverting void diffusion in integrated circuit conductors
11/08/2007	US20070259512 Method of manufacturing a semiconductor device
11/08/2007	US20070259510 Semiconductor device, semiconductor layer and production method thereof
11/08/2007	US20070259491 Semiconductor device and method for fabricating the same
11/08/2007	US20070259487 Method of forming a polysilicon film and method of manufacturing a thin film transistor including a polysilicon film
11/08/2007	US20070259486 Semiconductor device and method for manufacturing the same
11/08/2007	US20070259289 Thin film transistor array panel, manufacturing method thereof, and mask therefor
11/08/2007	US20070257602 Display Device and Method for Manufacturing the Same
11/08/2007	US20070257370 Multilayer electrode structures including capacitor structures having aluminum oxide diffusion barriers and methods of forming the same
11/08/2007	US20070257369 Reducing resistivity in interconnect structures of integrated circuits
11/08/2007	US20070257367 Dielectric trenches, nickel/tantalum oxide structures,and chemical mechanical polishing techniques
11/08/2007	US20070257363 Semiconductor device
11/08/2007	US20070257361 Chip package
11/08/2007	US20070257338 Method of manufacturing a coaxial trace in a surrounding material, coaxial trace formed thereby, and semiconducting material containing same
11/08/2007	US20070257336 MOSFET having a channel region with enhanced stress and method of forming same
11/08/2007	US20070257334 Process for producing a iii-n bulk crystal and a free-standing iii-n substrate, and iii-n bulk crystal and free-standing iii-n substrate

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