Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2007
12/05/2007CN100353488C Method for producing semiconductor device and cleaning device for resist stripping
12/05/2007CN100353394C Pixel circuit of display
12/05/2007CN100353251C Semiconductor device capable of suppressing variation of current or voltage to be supplied to external circuit
12/05/2007CN100353248C Pixel structure and mfg method therefor
12/05/2007CN100353247C Liquid crystal display device and its manufacturing method
12/05/2007CN100353244C Liquid crystal display device, and its manufacturing method anbd transistor array substrate and manufacturing method
12/04/2007USRE39932 Semiconductor interconnect formed over an insulation and having moisture resistant material
12/04/2007US7305321 Multiple sensor system
12/04/2007US7304707 In-plane switching mode liquid crystal display device and method for fabricating the same
12/04/2007US7304706 IPS liquid crystal display device with edge of the pixel electrode, common electrode, and signal line having stairwise stepped portions
12/04/2007US7304497 Methods and apparatus for programmably powering down structured application-specific integrated circuits
12/04/2007US7304395 Semiconductor chip package
12/04/2007US7304394 Semiconductor device and method for manufacturing same
12/04/2007US7304390 Anisotropic conductive sheet and manufacture thereof
12/04/2007US7304389 Semiconductor device and supporting plate
12/04/2007US7304385 Semiconductor chip capable of implementing wire bonding over active circuits
12/04/2007US7304384 Semiconductor device with a barrier film which contains manganese
12/04/2007US7304383 TFT substrate for liquid crystal display apparatus and method of manufacturing the same
12/04/2007US7304370 Electronic device having wiring substrate and lead frame
12/04/2007US7304368 Chalcogenide-based electrokinetic memory element and method of forming the same
12/04/2007US7304367 Metal-insulator-metal capacitors including transition metal silicide films on doped polysilicon contact plugs
12/04/2007US7304366 Self correcting multiple-link fuse
12/04/2007US7304365 Semiconductor device and method of producing the same
12/04/2007US7304364 Embossed mask lithography
12/04/2007US7304360 Method of forming super-paramagnetic cladding material on conductive lines of MRAM devices
12/04/2007US7304359 Magnetic tunnel junction structure with amorphous NiFeSiB free layer
12/04/2007US7304358 MOS transistor with a deformable gate
12/04/2007US7304357 Devices having horizontally-disposed nanofabric articles and methods of making the same
12/04/2007US7304356 IGBT or like semiconductor device of high voltage-withstanding capability
12/04/2007US7304355 Three-dimensional-memory-based self-test integrated circuits and methods
12/04/2007US7304354 Buried guard ring and radiation hardened isolation structures and fabrication methods
12/04/2007US7304353 Formation of standard voltage threshold and low voltage threshold MOSFET devices
12/04/2007US7304352 Alignment insensitive D-cache cell
12/04/2007US7304350 Threshold voltage control layer in a semiconductor device
12/04/2007US7304349 Power semiconductor component with increased robustness
12/04/2007US7304348 DMOS transistor
12/04/2007US7304347 Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands
12/04/2007US7304346 Flash memory cell transistor and method for fabricating the same
12/04/2007US7304345 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device
12/04/2007US7304344 Integrated circuit having independently formed array and peripheral isolation dielectrics
12/04/2007US7304343 Semiconductor memory device and manufacturing method for the same
12/04/2007US7304342 Semiconductor memory cell and associated fabrication method
12/04/2007US7304341 Semiconductor device and method for fabricating the same
12/04/2007US7304340 Semiconductor storage elements, semiconductor device manufacturing methods therefor, portable electronic equipment and IC card
12/04/2007US7304337 Semiconductor device
12/04/2007US7304336 FinFET structure and method to make the same
12/04/2007US7304335 Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performance and high scaling down density
12/04/2007US7304334 Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same
12/04/2007US7304333 Semiconductor device
12/04/2007US7304332 Compound semiconductor epitaxial substrate and method for manufacturing same
12/04/2007US7304330 Nitride semiconductor device
12/04/2007US7304329 Field effect transistor
12/04/2007US7304328 Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion
12/04/2007US7304327 Thyristor circuit and approach for temperature stability
12/04/2007US7304326 Light emitting device and sealing material
12/04/2007US7304324 Semiconductor memory element and lifetime operation starting apparatus therefor
12/04/2007US7304323 Test mask structure
12/04/2007US7304002 Method of oxidizing member to be treated
12/04/2007US7303996 High-K gate dielectric stack plasma treatment to adjust threshold voltage characteristics
12/04/2007US7303990 Nickel-silicon compound forming method, semiconductor device manufacturing method, and semiconductor device
12/04/2007US7303988 Methods of manufacturing multi-level metal lines in semiconductor devices
12/04/2007US7303987 Contact structure of a wires and method manufacturing the same, and thin film transistor substrate including the contact structure and method manufacturing the same
12/04/2007US7303980 Laser annealing method and apparatus
12/04/2007US7303970 Method of fabricating dielectric mixed layers and capacitive element and use thereof
12/04/2007US7303969 Method of making interband tunneling diodes
12/04/2007US7303968 Semiconductor device and method having multiple subcollectors formed on a common wafer
12/04/2007US7303965 MIS transistor and method for producing same
12/04/2007US7303963 Method for manufacturing cell transistor
12/04/2007US7303961 Method for producing a junction region between a trench and a semiconductor zone surrounding the trench
12/04/2007US7303954 Method for manufacturing NAND flash device
12/04/2007US7303951 Method of manufacturing a trench isolation region in a semiconductor device
12/04/2007US7303950 Semiconductor device, method of manufacturing same and method of designing same
12/04/2007US7303949 High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture
12/04/2007US7303948 Semiconductor device including MOSFET having band-engineered superlattice
12/04/2007US7303946 Method of manufacturing a semiconductor device using an oxidation process
12/04/2007US7303942 Semiconductor device and method for manufacturing the same
12/04/2007US7303938 Gated isolation structure for imagers
12/04/2007US7303828 Ferroelectric film, method of manufacturing the same, ferroelectric memory and piezoelectric device
12/04/2007US7303786 Doping inert gas into the substrate to form pores; depositing a buffer layer on the substrate; depositing an amorphous silicon layer on the buffer layer; and heating the amorphous silicon layer (particularly by excimer laser annealing) convert the layer into a polysilicon layer; TFT-LCD manufacturing
11/2007
11/29/2007WO2007137055A2 High density magnetic memory cell layout for spin transfer torque magnetic memories utilizing donut shaped transistors
11/29/2007WO2007136519A1 Semiconductor devices including self aligned refractory contacts and methods of fabricating the same
11/29/2007WO2007136461A2 Grown nanofin transistors
11/29/2007WO2007136420A2 Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
11/29/2007WO2007136401A2 N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor
11/29/2007WO2007136392A1 Low optical loss electrode structures for leds
11/29/2007WO2007136391A1 Electrode structures for leds with increased active area
11/29/2007WO2007136351A1 Solution-processed inorganic films for organic thin film transistors
11/29/2007WO2007136102A1 Semiconductor device, integrated circuit, and semiconductor manufacturing method
11/29/2007WO2007136098A1 Coating liquid for gate insulating film, gate insulating film and organic transistor
11/29/2007WO2007135940A1 Semiconductor element and method for manufacturing same
11/29/2007WO2007135911A1 Method for forming organic thin film transistor and organic thin film transistor
11/29/2007WO2007135861A1 Organic fet with improved electrode interface and method for fabricating the same
11/29/2007WO2007135817A1 Multiferroic element
11/29/2007WO2007135694A1 Three- terminal power device with high switching speed and manufacturing process
11/29/2007WO2007135146A1 Semiconductor component and rectifier arrangement
11/29/2007WO2007134905A1 Symmetrical mim capacitor design
11/29/2007WO2007134751A1 Non-volatile memory cell of a circuit integrated in a semiconductor chip, method for producing it, and use of a non-volatile memory cell
11/29/2007WO2007110507A3 Process for fabricating a field-effect transistor with self-aligned gates
11/29/2007WO2007089949A3 Memory cells having split charge storage nodes and methods for fabricating memory cells having split charge storage nodes
11/29/2007WO2007072405B1 Semiconductor device with recessed field plate and method of manufacturing the same
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