Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2007
12/18/2007US7309902 Microelectronic device with anti-stiction coating
12/18/2007US7309900 Thin-film transistor formed on insulating substrate
12/18/2007US7309899 Semiconductor device including a MOSFET with nitride side wall
12/18/2007US7309898 Method and apparatus for providing noise suppression in an integrated circuit
12/18/2007US7309894 High voltage gate driver integrated circuit including high voltage junction capacitor and high voltage LDMOS transistor
12/18/2007US7309893 Semiconductor device and method of fabricating the same
12/18/2007US7309892 Semiconductor element and semiconductor memory device using the same
12/18/2007US7309891 Non-volatile and memory semiconductor integrated circuit
12/18/2007US7309889 Constructions comprising perovskite-type dielectric
12/18/2007US7309888 Spin based electronic device
12/18/2007US7309887 Ferromagnetic-semiconductor spin polarizer of electrons in nonmagnetic semiconductors
12/18/2007US7309884 Semiconductor light receiving device and method of fabricating the same
12/18/2007US7309883 Semiconductor device capable of preventing current flow caused by latch-up and method of forming the same
12/18/2007US7309879 Semiconductor laser, manufacturing the same and semiconductor laser device
12/18/2007US7309878 3-D readout-electronics packaging for high-bandwidth massively paralleled imager
12/18/2007US7309876 Organic semiconductor having polymeric and nonpolymeric constituents
12/18/2007US7309874 Field-effect transistor
12/18/2007US7309865 Electronic device having infrared sensing elements
12/18/2007US7309645 Semiconductor thin film crystallization method
12/18/2007US7309638 Method of manufacturing a semiconductor component
12/18/2007US7309635 Phosphorous doping methods of manufacturing field effect transistors having multiple stacked channels
12/18/2007US7309633 Semiconductor device including MOS field effect transistor having offset spacers or gate sidewall films on either side of gate electrode and method of manufacturing the same
12/18/2007US7309623 Method of fabricating a stacked die in die BGA package
12/18/2007US7309609 Applying alternating magnetic fields; generating eddy currents
12/18/2007US7309563 Patterning using wax printing and lift off
12/18/2007US7309534 Three layers, each composed of gallium, aluminum, and/or indium nitrides; second layer includes greater defects in crystal structure, such as a dislocation density, than those of the first and third layers; formed from melt including an alkali or alkaline-earth metal; high quality
12/18/2007US7308756 Apparatus used for manufacturing semiconductor device, method of manufacturing the semiconductor devices, and semiconductor device manufactured by the apparatus and method
12/18/2007CA2432334C Silicon nanoparticle electronic switches
12/13/2007WO2007143208A2 Near natural breakdown device
12/13/2007WO2007143130A2 Planar split-gate high-performance mosfet structure and manufacturing method
12/13/2007WO2007143008A2 Semiconductor having improved gate-to-drain breakdown voltage
12/13/2007WO2007142622A1 Bipolar junction transistor with a reduced collector- substrate capacitance
12/13/2007WO2007142423A1 Programmable mit sensor using the abrupt mit device, and alarm apparatus and secondary battery anti-explosion circuit including the mit sensor
12/13/2007WO2007142239A1 Semiconductor device
12/13/2007WO2007142238A1 Semiconductor element, method for manufacturing the semiconductor element, electronic device and method for manufacturing the electronic device
12/13/2007WO2007142228A1 Smectic liquid crystal compound
12/13/2007WO2007142167A1 Semiconductor device including an oxide semiconductor thin film layer of zinc oxide and manufacturing method thereof
12/13/2007WO2007142107A1 Power ic device and method for manufacturing same
12/13/2007WO2007142010A1 Semiconductor device and method for manufacturing the same
12/13/2007WO2007141944A1 Acceleration sensor
12/13/2007WO2007141747A2 Nitrogenated carbon electrode for chalcogenide device and method of making same
12/13/2007WO2007118031A3 Silicon oxynitride gate dielectric formation using multiple annealing steps
12/13/2007WO2007108932A8 Technique for preparing precursor films and compound layers for thin film solar cell fabrication and apparatus corresponding thereto
12/13/2007WO2007092551A3 Stress liner for integrated circuits
12/13/2007WO2007069188A3 Mos transistor and a method of manufacturing a mos transistor
12/13/2007WO2007038343A3 Power semiconductor device with integrated passive component
12/13/2007WO2007002403A3 Direct optical light guide
12/13/2007WO2006119493A3 Semiconductor device with reduced metal layer stress
12/13/2007WO2006119251A3 Ultrathin porous nanoscale membranes, methods of making, and uses thereof
12/13/2007WO2006060302A3 Wide bandgap semiconductor lateral trench fet and method of making
12/13/2007US20070287848 Silicon Compound Containi-Electron Conjugated-System Molecule and Process for Producing the Same
12/13/2007US20070287250 Method for fabricating a semiconductor device having an insulation film with reduced water content
12/13/2007US20070287245 Semiconductor device and method of manufacture thereof
12/13/2007US20070287241 Fabrication method of semiconductor integrated circuit device
12/13/2007US20070285991 Semiconductor memory
12/13/2007US20070285984 Data processing device
12/13/2007US20070285872 Capacitive switch of electric/electronic device
12/13/2007US20070285146 Semiconductor device with pump circuit
12/13/2007US20070284758 Electronics package and associated method
12/13/2007US20070284757 Electronic Circuit Arrangement and Method for Producing It
12/13/2007US20070284748 Copper interconnects with improved electromigration lifetime
12/13/2007US20070284736 Enhanced mechanical strength via contacts
12/13/2007US20070284697 Marker for alignment of non-transparent gate layer, method for manufacturing such a marker, and use of such a marker in a lithographic apparatus
12/13/2007US20070284696 Nitride Semiconductor Substrate
12/13/2007US20070284695 Apparatus and method for controlled particle beam manufacturing
12/13/2007US20070284694 Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structure
12/13/2007US20070284693 Electrically programmable fuse with asymmetric structure
12/13/2007US20070284692 Device isolation structure incorporated in semiconductor device and method of forming the same
12/13/2007US20070284691 Semiconductor device with omega gate and method for fabricating a semiconductor device
12/13/2007US20070284690 Etch features with reduced line edge roughness
12/13/2007US20070284689 Drive circuit
12/13/2007US20070284682 Mems process and device
12/13/2007US20070284679 MOS solid-state image pickup device and manufacturing method thereof
12/13/2007US20070284678 Methods of Manufacturing Metal-Silicide Features
12/13/2007US20070284677 Metal oxynitride gate
12/13/2007US20070284675 Semiconductor device and method for manufacturing same
12/13/2007US20070284674 Porous silicon for isolation region formation and related structure
12/13/2007US20070284673 High frequency MOS device and manufacturing process thereof
12/13/2007US20070284672 Current limiting mosfet structure for solid state relays
12/13/2007US20070284671 Semiconductor device including cmis transistor
12/13/2007US20070284670 Semiconductor device and fabrication method therefor
12/13/2007US20070284669 Method and structure to process thick and thin fins and variable fin to fin spacing
12/13/2007US20070284666 Local ESD Protection for Low-Capicitance Applications
12/13/2007US20070284659 Method of forming high voltage n-ldmos transistors having shallow trench isolation region with drain extensions
12/13/2007US20070284658 Laterally Diffused Metal Oxide Semiconductor Device and Method of Forming the Same
12/13/2007US20070284657 Semiconductor device having trench-type gate and its manufacturing method capable of simplifying manufacturing steps
12/13/2007US20070284656 Conductive hard mask to protect patterned features during trench etch
12/13/2007US20070284655 Semiconductor device and method for fabricating the same
12/13/2007US20070284654 Metal alloy layer over conductive region of transistor device of different conductive material than conductive region
12/13/2007US20070284653 Semiconductor device
12/13/2007US20070284652 Semiconductor memory device
12/13/2007US20070284651 Charge-trap type non-volatile memory devices and related methods
12/13/2007US20070284650 Memory device and a method of forming a memory device
12/13/2007US20070284649 Semiconductor device and method of manufacturing same
12/13/2007US20070284648 Non-volatile memory device and method of manufacturing the same
12/13/2007US20070284647 Semiconductor device and method of fabricating the same
12/13/2007US20070284646 Nonvolatile semiconductor memory device
12/13/2007US20070284645 Non-volatile memory devices having a multi-layered charge storage layer and methods of forming the same
12/13/2007US20070284644 An Apparatus and Associated Method for Making a Floating Gate Cell in a Virtual Ground Array
12/13/2007US20070284643 Capacitor structure of semiconductor memory and method for preparing the same
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