Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2007
12/13/2007US20070284641 Metal-insulator-metal-structured capacitor formed with polysilicon
12/13/2007US20070284640 Semiconductor capacitors in hot (hybrid orientation technology) substrates
12/13/2007US20070284639 Transistor and Method for Manufacturing the Same
12/13/2007US20070284636 Semiconductor memory device and method for fabricating the same
12/13/2007US20070284635 Nitrogenated carbon electrode for chalcogenide device and method of making same
12/13/2007US20070284634 Semiconductor device and method of manufacturing the same
12/13/2007US20070284633 Curled semiconductor transistor
12/13/2007US20070284632 Non-volatile memory device and a method of fabricating the same
12/13/2007US20070284631 Integrally gated carbon nanotube field ionizer device and method of manufacture therefor
12/13/2007US20070284630 Field Effect Transistor For Measuring Biocomponents
12/13/2007US20070284629 High-performance field effect transistors with self-assembled nanodielectrics
12/13/2007US20070284627 Liquid crystal display device and semiconductor device
12/13/2007US20070284626 Scalable process and structure for JFET for small and decreasing line widths
12/13/2007US20070284624 Optical semiconductor device with sensitivity improved
12/13/2007US20070284623 Semiconductor device having vertical channel transistor
12/13/2007US20070284622 Phase-change memory device
12/13/2007US20070284621 Dual-gate semiconductor devices with enhanced scalability
12/13/2007US20070284620 Structure and Method of Sub-Gate and Architectures Employing Bandgap Engineered SONOS Devices
12/13/2007US20070284619 Semiconductor integrated circuit device
12/13/2007US20070284618 Transistor layout for standard cell with optimized mechanical stress effect
12/13/2007US20070284617 High performance CMOS devices comprising gapped dual stressors with dielectric gap fillers, and methods of fabricating the same
12/13/2007US20070284615 Ultra-shallow and highly activated source/drain extension formation using phosphorus
12/13/2007US20070284614 Ohmic contacts for semiconductor devices
12/13/2007US20070284610 Switching Device, Drive And Manufacturing Method For The Same, Integrated Circuit Device And Memory Device
12/13/2007US20070284609 Method and apparatus for drain pump power conservation
12/13/2007US20070284608 Reduction of dopant loss in a gate structure
12/13/2007US20070284597 Light emitting device and LCD backlighting device
12/13/2007US20070284593 Nitride-based semiconductor light emitting diode
12/13/2007US20070284589 Light emitting device having increased light output
12/13/2007US20070284587 Flexible electronic device and production method of the same
12/13/2007US20070284586 Thin film transistor array substrate and method for fabricating the same
12/13/2007US20070284585 Thin film transistor array panel and method of manufacturing the same
12/13/2007US20070284584 System for displaying images including electroluminescent device and method for fabricating the same
12/13/2007US20070284583 Semiconductor device and method of manufacturing the same
12/13/2007US20070284582 Semiconductor device and manufacturing method of the same
12/13/2007US20070284581 Method of fabricating pmos thin film transistor
12/13/2007US20070284580 Bottom gate thin film transistor and method of manufacturing the same
12/13/2007US20070284579 Strained Si formed by anneal
12/13/2007US20070284577 Semiconductor device including fuses and method of cutting the fuses
12/13/2007US20070284575 Metal/semiconductor/metal current limiter
12/13/2007US20070284574 Method of Forming a Transistor Having a Dual Layer Dielectric
12/13/2007US20070284573 Gate controlled field emission triode and process for fabricating the same
12/13/2007US20070284572 Polythiophenes and devices thereof
12/13/2007US20070284571 Organic thin-film transistor, method of manufacturing same and equipment for manufacturing same
12/13/2007US20070284570 Organic semiconductor compositions with nanoparticles
12/13/2007US20070284569 Charge Coupled Device
12/13/2007US20070284568 Field effect transistor and method for manufacturing same
12/13/2007US20070284567 Polarization recycling devices and methods
12/13/2007US20070284566 Composite semiconductor device and method of manufacturing the same
12/13/2007US20070284565 Led device with re-emitting semiconductor construction and optical element
12/13/2007US20070284564 Gan-Based Semiconductor Light-Emitting Device, Light Illuminator, Image Display Planar Light Source Device, and Liquid Crystal Display Assembly
12/13/2007US20070284563 Light emitting device including rgb light emitting diodes and phosphor
12/13/2007US20070284360 Heating element for microfluidic and micromechanical applications
12/13/2007DE19801095B4 Leistungs-MOSFET Power MOSFET
12/13/2007DE102007026365A1 Semiconductor device e.g. diode, for use in module, has conducting layer having concentration of silicon that changes over depth so that concentration is reduced in depth between surfaces contacting substrate and other conducting layer
12/13/2007DE102006030305B3 Semiconductor device, useful e.g. in field-effect transistors, comprises an aluminum-gallium-indium-nitrogen layer, aluminum-gallium-nitrogen intermediate layer, and another aluminum-gallium-indium-nitrogen layer
12/13/2007DE102006026943A1 Field effect controllable trench transistor, has trench formed in semiconductor and primary control electrode formed in trench with gate electrode, which is insulated by primary insulation layer opposite to semiconductor body
12/13/2007DE102006025959A1 Leistungshalbleiteranordnung mit gelöteter Clip-Verbindung und Verfahren zur Herstellung einer solchen A power semiconductor device with brazed clip connection and methods for producing such
12/13/2007DE102006025374A1 Gate-Ansteuerungs-Einrichtung, Sperrschicht-Feldeffekttransistor-Anordnung und Verfahren zum Ansteuern eines Sperrschicht-Feldeffekttransistors Gate drive device, JFET-arrangement and method for driving a junction field effect transistor
12/13/2007DE102004024924B4 Verfahren zum Herstellen polykristallinen Siliciums, Verfahren zum Herstellen einer Ausrichtungsmarkierung, sowie Verfahren zum Herstellen eines Schaltelements A method for producing polycrystalline silicon, methods of making an alignment mark, as well as methods for producing a switching element
12/13/2007DE10129954B4 Verfahren zur Herstellung eines Halbleiterbauelements A process for producing a semiconductor device
12/12/2007EP1865714A1 Drive method for driving element having capacity impedance, drive device, and imaging device
12/12/2007EP1865566A1 Organic electroluminescent devices, organic solar cells, organic FET structures and production method of organic devices
12/12/2007EP1865561A1 An enhancement mode field effect device and the method of production thereof
12/12/2007EP1865329A1 Semiconductor acceleration sensor
12/12/2007EP1864951A2 Chalcogenide glass constant current device, and its method of fabrication and operation
12/12/2007EP1864337A1 Group iii nitride white light emitting diode
12/12/2007EP1864332A2 Semiconductor power device and corresponding manufacturing process
12/12/2007EP1864331A2 Process for forming a planar diode using one mask
12/12/2007EP1864321A1 Method of manufacturing a semiconductor device having a buried doped region
12/12/2007EP1864318A2 Asymmetric bidirectional transient voltage suppressor and method of forming same
12/12/2007EP1393377A4 Applications for and tunneling device
12/12/2007EP1356500B1 Pod load interface equipment adapted for implementation in a fims system
12/12/2007CN200990379Y Voltage control transistor and transverse diffusion metal oxide semiconductor transistor
12/12/2007CN200990378Y Semiconductor device and voltage clamping limiter
12/12/2007CN101088221A Adaptive gate drive for switching devices of inverter
12/12/2007CN101088166A Thin film transistor and method for manufacture thereof, and thin film transistor substrate and method for manufacture thereof, and liquid crystal display device and organic EL display device using sa
12/12/2007CN101088165A A COMS imager for eliminating high reflectivity interfaces
12/12/2007CN101088155A Semiconductor device and its manufacturing method
12/12/2007CN101088144A Exposure apparatus and semiconductor device manufacturing method using it
12/12/2007CN101087004A TFT array substrate, manufacturing method thereof and display device
12/12/2007CN101087003A Semiconductor element and its forming method
12/12/2007CN101087002A Semiconductor structure with stressor channel and its forming method
12/12/2007CN101087001A MOS element and semiconductor structure
12/12/2007CN101087000A Porous silicon for isolation region formation and related structure
12/12/2007CN101086968A Bottom gate thin film transistor and method of manufacturing the same
12/12/2007CN101086567A 液晶显示面板 The liquid crystal display panel
12/12/2007CN100355206C Low power operation mechanism and method
12/12/2007CN100355103C Method of producing organic semiconductor device
12/12/2007CN100355087C Semiconductor device and method of manufacturing the same
12/12/2007CN100355086C High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon
12/12/2007CN100355085C Semiconductor element with tungsten oxide layer and method for its production
12/12/2007CN100355083C Double-plate type organic electroluminescent display and mfg. method thereof
12/12/2007CN100355076C Semiconductor substrate manufacturing method and semiconductor device manufacturing method, and semiconductor substrate and semiconductor device manufactured by the methods
12/12/2007CN100355063C Chip dimention packaging and method for preparing wafer-class chip dimention packing
12/12/2007CN100355059C Semiconductor device, method of generating semiconductor device pattern, method of manufacturing semiconductor device and pattern generator for semiconductor device
12/12/2007CN100355057C Electrode structure, and method for manufacturing thin-film structure
12/12/2007CN100355047C Method for manufacturing semiconductor device and protective resin coating device of semiconductor chip assembly
12/12/2007CN100355046C Ion implantation of silicon oxide liner to prevent dopant out-diffusion from source/drain extensions
12/12/2007CN100355044C Semiconductor thin film, Semiconductor device and mfg. method thereof
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