Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2007
12/27/2007US20070296041 Semiconductor device and method of manufacturing the same
12/27/2007US20070296038 High performance stress-enhanced mosfets using si:c and sige epitaxial source/drain and method of manufacture
12/27/2007US20070296031 Semiconductor device and manufacture method thereof
12/27/2007US20070296030 Semiconductor integrated circuit device having deposited layer for gate insulation
12/27/2007US20070296028 Vertical Field-Effect Transistor and Method of Forming the Same
12/27/2007US20070296026 SONOS memory device
12/27/2007US20070296025 Random number generating device
12/27/2007US20070296024 Memory device and manufacturing method and operating method thereof
12/27/2007US20070296023 Charge Monitoring Devices and Methods for Semiconductor Manufacturing
12/27/2007US20070296022 Flash Memory Process with High Voltage LDMOS Embedded
12/27/2007US20070296021 Nonvolatile semiconductor memory with backing wirings and manufacturing method thereof
12/27/2007US20070296020 Semiconductor device
12/27/2007US20070296019 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
12/27/2007US20070296018 Nonvolatile single-poly memory device
12/27/2007US20070296017 Nonvolatile semiconductor memory
12/27/2007US20070296016 Semiconductor device and method of manufacturing the same
12/27/2007US20070296015 Memory devices having reduced interference between floating gates and methods of fabricating such devices
12/27/2007US20070296013 Semiconductor device structure for reducing mismatch effects
12/27/2007US20070296010 Pick-up structure for dram capacitors and dram process
12/27/2007US20070296009 Semiconductor device including a capacitance
12/27/2007US20070296008 Semiconductor device
12/27/2007US20070296007 Shared ground contact isolation structure for high-density magneto-resistive RAM
12/27/2007US20070296003 Thin Film Transistor Substrate and Method for Manufacturing the Same
12/27/2007US20070296002 Backside contacts for MOS devices
12/27/2007US20070296001 Multiple conduction state devices having differently stressed liners
12/27/2007US20070296000 Method for manufacturing a semiconductor device
12/27/2007US20070295994 Hetero junction bipolar transistor
12/27/2007US20070295993 Low Density Drain HEMTs
12/27/2007US20070295992 Hetero junction field effect transistor and method of fabricating the same
12/27/2007US20070295991 Semiconductor device and manufacturing method of the same
12/27/2007US20070295990 Gan-Based Field Effect Transistor and Production Method Therefor
12/27/2007US20070295988 Dual-gate sensor
12/27/2007US20070295987 Semiconductor device and method of driving the same
12/27/2007US20070295985 Gallium nitride material devices and methods of forming the same
12/27/2007US20070295976 Semiconductor Device And Production Method Thereof
12/27/2007US20070295968 Electroluminescent device with high refractive index and UV-resistant encapsulant
12/27/2007US20070295967 Active matrix tft array substrate and method of manufacturing the same
12/27/2007US20070295966 Conversion apparatus and imaging system
12/27/2007US20070295965 Thin film transistor, method of fabricating the same, and method of fabricating liquid crystal display device having the same
12/27/2007US20070295964 Semiconductor device and method for preparing the same
12/27/2007US20070295963 Tft array substrate and method of manufacturing the same
12/27/2007US20070295962 Organic light emitting diode display and method for manufacturing the same
12/27/2007US20070295961 Organic light emitting display
12/27/2007US20070295960 Semiconductor device, electro-optical device, electronic apparatus, and method of producing semiconductor device
12/27/2007US20070295959 Organic light-emitting display device
12/27/2007US20070295958 Semiconductor structure having a low hot-carrier effect characteristic
12/27/2007US20070295956 Optoelectronic device
12/27/2007US20070295954 Method and structure to isolate a qubit from the environment
12/27/2007US20070295456 Wafer bonding material with embedded conductive particles
12/27/2007DE19943114B4 Verfahren zur Herstellung eines MOS-Transistors A process for producing a MOS transistor
12/27/2007DE19938209B4 Halbleiteranordnung und Verfahren zur Herstellung A semiconductor device and method for producing
12/27/2007DE19930586B4 Nichtflüchtige Speicherzelle mit separatem Tunnelfenster Non-volatile memory cell with a separate tunnel window
12/27/2007DE19928547B4 Verfahren zur Herstellung eines Drucksensors A process for producing a pressure sensor
12/27/2007DE19928280B4 Ferroelektrischer Kondensator und Verfahren zur Herstellung desselben A ferroelectric capacitor and method for manufacturing the same
12/27/2007DE10345520B4 Verfahren zum Betrieb einer Charge-Trapping-Speicherzelle Method of operating a charge-trapping memory cell
12/27/2007DE10341359B4 Halbleitervorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
12/27/2007DE10337561B4 Herstellungsverfahren für ein DRAM mit verbessertem Leckstromverhalten Manufacturing method for a DRAM having an improved leakage current behavior
12/27/2007DE102007027378A1 Connection arrangement, has galvanically applied metallic layer extending between main surfaces and electrically connecting main surfaces, and spacer unit arranged in recess to space main surface from another main surface
12/27/2007DE102006027504A1 Randabschlussstruktur von MOS-Leistungstransistoren hoher Spannungen Edge termination structure of MOS power transistors of high voltages
12/27/2007DE102006027382A1 Metal-oxide semiconductor transistor e.g. power transistor, has arrangement of base cells connected parallel to substrate and with central drain region, ring-shaped gate closed and source region arranged outside of gate
12/27/2007DE102006015131B4 Halbleiterstruktur mit Sinker-Kontakt und Verfahren zu deren Herstellung Semiconductor structure having sinker contact and procedures for their preparation
12/27/2007DE102005008354B4 Halbleiterbauteil sowie Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
12/27/2007DE102004057235B4 Vertikaler Trenchtransistor und Verfahren zu dessen Herstellung Vertical trench transistor and method of producing the
12/27/2007DE102004024923B4 Überspannungsschutz-Vorrichtung Surge protection device
12/27/2007DE10164176B4 Bipolartransistor Bipolar transistor
12/27/2007DE10047659B4 Epitaktische GaInP-Stapelstruktur und Herstellungsverfahren dafür sowie FET-Transistor unter Verwendung dieser Struktur GaInP epitaxial stacked structure and manufacture method therefor as well as FET transistor using this structure
12/27/2007CA2654634A1 Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
12/26/2007EP1870941A1 Non-volatile memory device having four storage node films and methods of operating and manufacturing the same
12/26/2007EP1870940A1 Semiconductor device
12/26/2007EP1870939A1 Semiconductor device
12/26/2007EP1870938A1 Semi-conductor protection structure for electrostatic discharge
12/26/2007EP1870935A2 A stacked non-volatile memory device and methods for fabricating the same
12/26/2007EP1870927A1 Method of manufacturing a semiconductor device
12/26/2007EP1870902A2 Semiconductor memory device and storage method thereof
12/26/2007EP1869720A2 Aryl-ethylene substituted aromatic compounds and their use as organic semiconductors
12/26/2007EP1869713A1 Split gate multi-bit memory cell
12/26/2007EP1869712A1 Structure and method for realizing a microelectronic device provided with a number of quantum wires capable of forming one or more transistor channels
12/26/2007EP1869711A2 Production of vdmos-transistors having optimised gate contact
12/26/2007EP1869710A2 Thick semi-insulating or insulating epitaxial gallium nitride layers and devices incorporating same
12/26/2007EP1869709A2 Structure and method of fabricating high-density, trench-based non-volatile random access sonos memory cells for soc applications
12/26/2007EP1869707A2 Technique for the growth of planar semi-polar gallium nitride
12/26/2007EP1869702A2 Metal-insulator-metal capacitor manufactured using etchback
12/26/2007EP1869698A2 Manufacturing ccds in a conventional cmos process
12/26/2007EP1340247A4 Method of forming dielectric films
12/26/2007EP1297535B1 Reference cell for high speed sensing in non-volatile memories
12/26/2007EP1080490B1 Method of manufacturing a semiconductor device comprising a bipolar transistor and a capacitor
12/26/2007CN200997402Y Metal-oxide semiconductor tube of thick-grid high voltage P-type
12/26/2007CN200997401Y Semiconductor field-effect transistor of metal oxide
12/26/2007CN200997400Y Low-inductance gate-controlled transistor and power semiconductor assembly
12/26/2007CN101095239A High temperature memory device
12/26/2007CN101095238A High density semiconductor memory cell and memory array using a single transistor having a buried n+ connection
12/26/2007CN101095237A Method for the manufacture of a semiconductor device and a semiconductor device obtained through it
12/26/2007CN101095236A Method for dopant calibration of delta doped multilayered structure
12/26/2007CN101095235A SOI device
12/26/2007CN101095224A Method for nitriding tunnel oxide film, method for manufacturing non-volatile memory device, non-volatile memory device, control program and computer-readable storage medium
12/26/2007CN101095222A Method for producing semiconductor chips from a wafer
12/26/2007CN101095211A Strained dislocation-free channels for cmos and method of manufacture
12/26/2007CN101093861A Mim capacitor and method of making same
12/26/2007CN101093860A Method and structure for operating memory devices on fringes of control gate
12/26/2007CN101093859A Charge monitoring devices and methods for semiconductor manufacturing
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