Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2007
12/26/2007CN101093858A 存储器元件 Memory elements
12/26/2007CN101093857A Field effect transistor and manufacturing method thereof
12/26/2007CN101093856A Semiconductor device and manufacturing method thereof
12/26/2007CN101093855A Field effect transistors including source/drain regions extending beneath pillars
12/26/2007CN101093854A Semiconductor device and method of manufacturing the same
12/26/2007CN101093850A Memory device and method for fabricating the memory device
12/26/2007CN101093848A TFT array substrate and method of manufacturing the same
12/26/2007CN101093841A Multi-level cell memory structures with enlarged second bit operation window
12/26/2007CN101093840A Memory structures for expanding a second bit operation window
12/26/2007CN101093839A Memory devices
12/26/2007CN101093837A Method for operating non-volatile memory
12/26/2007CN101093836A Manufacturing method of memory, and memory
12/26/2007CN101093805A Method of fabricating semiconductor device and semiconductor device
12/26/2007CN101093804A Method for manufacturing semiconductor element
12/26/2007CN101093798A Polysilicon layer and preparation method
12/26/2007CN101093795A Semiconductor device and method for manufacturing the same
12/26/2007CN101093725A Method for operating non-volatile memory element
12/26/2007CN100358158C Active matrix organic light emitting device having series thin film transistor, and fabrication method therefor
12/26/2007CN100358157C Thin film transistor and its manufacturing method
12/26/2007CN100358156C Storing capacitor structure for LCD board and OELD board
12/26/2007CN100358155C Production of addressing driving chip of plasma planar display device
12/26/2007CN100358154C Bipolar power transistors and mfg. method
12/26/2007CN100358147C Dense arrays and charge storage devices, and methods for making same
12/26/2007CN100358145C Manuafcture of semiconductor memory device and semiconductor memory device with side wall isolating layers
12/26/2007CN100358143C MIS semiconductor device and method of fabricating the same
12/26/2007CN100358116C Method for etching polycrystalline silicon
12/26/2007CN100358106C Method for fabricating semiconductor device
12/26/2007CN100358103C Semiconductor device and multi-layer substrate used for the same semiconductor device
12/26/2007CN100358095C Method for manufacturing a semiconductor device
12/26/2007CN100358047C Magnetic RAM
12/26/2007CN100357992C Display device and mfg. method thereof
12/26/2007CN100357818C Panel of universal liquid crystal displaying device
12/26/2007CN100357817C Liquid crystal display and its producing method
12/26/2007CN100357816C Liquid crystal display unit
12/26/2007CN100357799C Display device and fabrication method of display device
12/26/2007CN100357370C Solutions and dispersions of organic semiconductors
12/25/2007US7313509 Simulation method and apparatus, and computer-readable storage medium
12/25/2007US7313009 Pattern layout of word line transfer transistors in NAND flash memory which executes subblock erase
12/25/2007US7312677 Micro-switching element fabrication method and micro-switching element
12/25/2007US7312572 EL display device, driving method thereof, and electronic equipment provided with the EL display device
12/25/2007US7312568 Organic electro luminescence device having TFT with protrusions
12/25/2007US7312533 Electronic component with flexible contacting pads and method for producing the electronic component
12/25/2007US7312531 A wiring layer: a catalyst layer of Cobalt and Tungsten, Phosphorus, Boron, Bismuth, or Nickel, overlying a substrate; a dielectric layer overlying the catalyst layer with openings exposing parts of the catalyst, carbon nanotubes on the exposed catalyst layer
12/25/2007US7312521 Semiconductor device with holding member
12/25/2007US7312520 Interface module for connecting LSI packages, and LSI-incorporating apparatus
12/25/2007US7312517 System-in-package type semiconductor device
12/25/2007US7312515 Semiconductor apparatus including a thin-metal-film resistor element and a method of manufacturing the same
12/25/2007US7312514 High-permittivity insulation film, thin film capacity element, thin film multilayer capacitor, and production method of thin film capacity element
12/25/2007US7312513 Antifuse circuit with well bias transistor
12/25/2007US7312512 Interconnect structure with polygon cell structures
12/25/2007US7312511 Semiconductor device with electrically isolated ground structures
12/25/2007US7312510 Device using ambipolar transport in SB-MOSFET and method for operating the same
12/25/2007US7312508 Optical element, and its manufacturing method
12/25/2007US7312506 Memory cell structure
12/25/2007US7312505 Semiconductor substrate with interconnections and embedded circuit elements
12/25/2007US7312504 Transistor for memory device and method for manufacturing the same
12/25/2007US7312503 Semiconductor memory device including MOS transistors each having a floating gate and a control gate
12/25/2007US7312502 Multiple dielectric FinFET structure and method
12/25/2007US7312501 Semiconductor device
12/25/2007US7312500 Manufacturing method of semiconductor device suppressing short-channel effect
12/25/2007US7312499 Semiconductor storage device and manufacturing method therefor, semiconductor device, portable electronic equipment and IC card
12/25/2007US7312498 Nonvolatile semiconductor memory cell and method of manufacturing the same
12/25/2007US7312497 Fabrication of conductive lines interconnecting first conductive gates in nonvolatile memories having second conductive gates provided by conductive gate lines, wherein the adjacent conductive gate lines for the adjacent columns are spaced from each other, and non-volatile memory structures
12/25/2007US7312496 Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same
12/25/2007US7312495 Split gate multi-bit memory cell
12/25/2007US7312494 Lanthanide oxide / hafnium oxide dielectric layers
12/25/2007US7312493 Semiconductor device and method of manufacturing the same
12/25/2007US7312492 Method for fabricating a DRAM memory cell arrangement having fin field effect transistors and DRAM memory cell
12/25/2007US7312490 Vertical memory device and method
12/25/2007US7312489 Memory cell having bar-shaped storage node contact plugs and methods of fabricating same
12/25/2007US7312488 Semiconductor storage device and manufacturing method for the same
12/25/2007US7312487 Three dimensional integrated circuit
12/25/2007US7312486 Stripe board dummy metal for reducing coupling capacitance
12/25/2007US7312485 CMOS fabrication process utilizing special transistor orientation
12/25/2007US7312483 Thin film transistor device and method of manufacturing the same
12/25/2007US7312482 Semiconductor device, power amplifier device and PC card
12/25/2007US7312481 Reliable high-voltage junction field effect transistor and method of manufacture therefor
12/25/2007US7312479 Side-emission type semiconductor light-emitting device and manufacturing method thereof
12/25/2007US7312478 Side structure of a bare LED and backlight module thereof
12/25/2007US7312477 Led lamp for light source
12/25/2007US7312474 Group III nitride based superlattice structures
12/25/2007US7312473 Display device and electronic device using the same
12/25/2007US7312471 Liquid crystal display device having drive circuit and fabricating method thereof
12/25/2007US7312470 Thin film transistor array panel and method for fabricating the same
12/25/2007US7312468 Semiconductor light-emitting element and method of manufacturing the same
12/25/2007US7312418 Semiconductor thin film forming system
12/25/2007US7312155 Forming self-aligned nano-electrodes
12/25/2007US7312150 Method of forming cobalt disilicide layer and method of manufacturing semiconductor device using the same
12/25/2007US7312147 Method of forming barrier metal in semiconductor device
12/25/2007US7312138 Semiconductor device and method of manufacture thereof
12/25/2007US7312137 Transistor with shallow germanium implantation region in channel
12/25/2007US7312136 Method of fabricating a wafer with strained channel layers for increased electron and hole mobility for improving device performance
12/25/2007US7312133 Method of manufacturing semiconductor device
12/25/2007US7312132 Field insulator FET device and fabrication method thereof
12/25/2007US7312124 Method of manufacturing a semiconductor device
12/25/2007US7312123 Semiconductor device and a method of manufacturing the same
12/25/2007US7312122 Self-aligned element isolation film structure in a flash cell and forming method thereof
12/25/2007US7312115 Fabrication method for a semiconductor structure having integrated capacitors
12/25/2007US7312111 Liquid crystal display panel
12/25/2007US7312110 Methods of fabricating semiconductor devices having thin film transistors