Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2008
01/17/2008US20080012018 Strained mos device and methods for its fabrication
01/17/2008US20080012016 Transparent conductive film, semiconductor device and active matrix display unit
01/17/2008US20080012015 METHOD FOR FABRICATING CuInS2 THIN FILM BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION, CuInS2 THIN FILM FABRICATED BY THE SAME AND METHOD FOR FABRICATING In2S3 THIN FILM THEREFROM
01/17/2008US20080012013 Pattern manufacturing equipments, organic thin-film transistors and manufacturing methods for organic thin-film transistor
01/17/2008US20080012012 Method for manufacturing semiconductor device, semiconductor device, and electrooptical device
01/17/2008US20080012008 Making organic thin film transistor array panels
01/17/2008US20080012006 Thin film transistor comprising novel conductor and dielectric compositions
01/17/2008US20080012004 Spintronic devices with constrained spintronic dopant
01/17/2008US20080012003 Quantum device, control method thereof and manufacturing method thereof
01/17/2008US20080012001 Shaped articles comprising semiconductor nanocrystals and methods of making and using same
01/17/2008US20080011998 Method of forming a chalcogenide memory cell having an ultrasmall cross-sectional area and a chalcogenide memory cell produced by the method
01/17/2008US20080011996 Multi-layer device with switchable resistance
01/17/2008DE112005003421T5 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
01/17/2008DE102007023885A1 Siliziumcarbid-Halbleitervorrichtung vom Graben-MOS-Typ und Verfahren zur Herstellung derselben Silicon carbide semiconductor device of the trench MOS type and method of making same
01/17/2008DE102006062077A1 Halbleitervorrichtung Semiconductor device
01/17/2008DE102006055329A1 Dünnfilmtransistor, Verfahren zu deren Herstellung, und Anzeigevorrichtung A thin film transistor, to processes for their preparation, and display device
01/17/2008DE102006030631A1 Semiconductor component assembly, has trench which extends within semiconductor body starting from side and gate electrode is arranged in trench which is insulated by gate dielectric opposite to semiconductor body
01/17/2008DE102006023171A1 Semiconductor component e.g. power diode, has field effect transistor structure with gate electrode arranged in doped area of emitter layer, such that emitter injection and barrier characteristics are adjustable in different areas
01/16/2008EP1879235A2 Vertical gate semiconductor device and method for manufacturing the same
01/16/2008EP1879234A2 Low temperature sol-gel silicates as dielectrics or planarization layers for thin film transistors
01/16/2008EP1878809A1 Al-Ni-B ALLOY WIRING MATERIAL AND ELEMENT STRUCTURE USING THE SAME
01/16/2008EP1878059A1 Semiconductor arrangement of mosfets
01/16/2008EP1878058A1 High electron mobility transistor (hemt) with refractory gate metal
01/16/2008EP1878057A2 One time programmable read only memory
01/16/2008EP1878056A2 Bipolar semiconductor device and manufacturing method thereof
01/16/2008EP1878045A2 Bipolar transistor and method of fabricating the same
01/16/2008EP1116276B1 Semiconductor component with field-forming regions
01/16/2008CN201007994Y Grid control varactor
01/16/2008CN201007993Y Insulation type high-power triode
01/16/2008CN101107718A Power mos part
01/16/2008CN101107717A Power semiconductor device including ring-shaped gate trenches
01/16/2008CN101107716A 有机薄膜晶体管 The organic thin film transistor
01/16/2008CN101107715A 半导体装置 Semiconductor device
01/16/2008CN101107714A Semiconductor devices
01/16/2008CN101107713A Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same
01/16/2008CN101107704A Thin film transistor array devices
01/16/2008CN101107698A Method for manufacturing semiconductor device
01/16/2008CN101107293A Highly heat-resistant synthetic polymer compound and high withstand voltage semiconductor device
01/16/2008CN101106162A Thin-film transistor and image display device
01/16/2008CN101106161A Underlay material for GaN epitaxial growth and its making method
01/16/2008CN101106160A Vertical gate semiconductor device and method for manufacturing the same
01/16/2008CN101106159A Multi-grid electric crystal and its making method
01/16/2008CN101106158A Germanium silicon heterogeneous crystal transistor with elevated external base area and its making technology
01/16/2008CN101106139A Nonvolatile memory having raised source and drain regions
01/16/2008CN101106138A Nonvolatile memory array having modified channel region interface
01/16/2008CN101106137A Operation method of nonvolatile memory having modified channel region interface
01/16/2008CN101106136A Nonvolatile memory unit IC and its making method
01/16/2008CN101106130A Power system inhibit method and device and structure therefor
01/16/2008CN101106108A Transistor and memory cell array and methods of making the same
01/16/2008CN101106091A Semiconductor part and its making method
01/16/2008CN101105614A Image sensing array with light-sensing unit and liquid crystal display
01/16/2008CN101105613A Liquid crystal display
01/16/2008CN100362671C Solid-state element and solid-state element device
01/16/2008CN100362669C Photothyristor device, bidirectional photothyristor device and electronic apparatus
01/16/2008CN100362667C Semiconductor element and its producing method
01/16/2008CN100362663C Integration of two memory types
01/16/2008CN100362662C Semiconductor device and electronic device
01/16/2008CN100362648C Semiconductor device and manufacturing method thereof
01/16/2008CN100362642C Detecting structure for simultaneously detecting hot carriers of multiple metal-oxide-semiconductor device
01/16/2008CN100362637C Method of manufacture of raised source drain MOSFET and device manufactured thereby
01/16/2008CN100362636C Method for producing a bipolar transistor comprising a polysilicon emitter
01/16/2008CN100362627C Semiconductor device with self-aligning section contact hole and its producing method
01/16/2008CN100362626C Barrier for capacitor over plug structures
01/16/2008CN100362618C A semiconductor device and making method thereof
01/16/2008CN100362414C Plane switching mode liquid crystal display device and fabrication method thereof
01/16/2008CN100362413C Method for making electronic apparatus
01/16/2008CN100362402C Aligning apparatus
01/15/2008US7319605 Conductive structure for microelectronic devices and methods of fabricating such structures
01/15/2008US7319347 Bidirectional high voltage switching device and energy recovery circuit having the same
01/15/2008US7319276 Substrate for pre-soldering material and fabrication method thereof
01/15/2008US7319275 Adhesion by plasma conditioning of semiconductor chip
01/15/2008US7319272 Ball assignment system
01/15/2008US7319270 Multi-layer electrode and method of forming the same
01/15/2008US7319264 Semiconductor device
01/15/2008US7319263 Semiconductor component with switching element configured to reduce parasitic current flow
01/15/2008US7319262 MRAM over sloped pillar
01/15/2008US7319261 Integrated MOS one-way isolation coupler and a semiconductor chip having an integrated MOS isolation one-way coupler located thereon
01/15/2008US7319260 Hinged bonding of micromechanical devices
01/15/2008US7319259 Structure and method for accurate deep trench resistance measurement
01/15/2008US7319258 Semiconductor-on-insulator chip with<100>-oriented transistors
01/15/2008US7319257 Power semiconductor device
01/15/2008US7319256 Shielded gate trench FET with the shield and gate electrodes being connected together
01/15/2008US7319255 Semiconductor device including a metal gate electrode formed in a trench and method of forming thereof
01/15/2008US7319254 Semiconductor memory device having resistor and method of fabricating the same
01/15/2008US7319252 Methods for forming semiconductor wires and resulting devices
01/15/2008US7319251 Bipolar transistor
01/15/2008US7319250 Semiconductor component and method for producing the same
01/15/2008US7319242 Substrate with recess portion for microlens, microlens substrate, transmissive screen, rear type projector, and method of manufacturing substrate with recess portion for microlens
01/15/2008US7319241 Surface emitting device, manufacturing method thereof and projection display device using the same
01/15/2008US7319239 Substrate for display device having a protective layer provided between the pixel electrodes and wirings of the active matrix substrate, manufacturing method for same, and display device
01/15/2008US7319238 Semiconductor device and its manufacturing method
01/15/2008US7319237 Thin film transistor array
01/15/2008US7319236 Semiconductor device and electronic device
01/15/2008US7319235 Resistive semiconductor element based on a solid-state ion conductor
01/15/2008US7319081 As a gate insulation film of a semiconductor apparatus and an intermediate insulation film between a gate electrode and a floating gate, etc. other than the thin film dielectric film of a thin film capacity element
01/15/2008US7319066 Semiconductor device and method for fabricating the same
01/15/2008US7319056 Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification
01/15/2008US7319055 Method of fabricating a semiconductor device utilizing crystallization of semiconductor region with laser beam
01/15/2008US7318865 Crystallization apparatus and method; manufacturing method of electronic device, electronic device, and optical modulation element
01/15/2008US7318337 Method and apparatus for measuring frequency characteristics of acceleration sensor