Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2008
01/11/2008CA2593177A1 Separable transient voltage suppression device
01/10/2008WO2008005856A2 Spin injection device having semicondcutor-ferromagnetic-semiconductor structure and spin transistor
01/10/2008WO2008005719A2 Spin injector
01/10/2008WO2008005092A2 Silicon carbide switching devices including p-type channels and methods of forming the same
01/10/2008WO2008004354A1 Array substrate, method for correcting the same, and liquid crystal display
01/10/2008WO2007129261A3 Trench field effect transistors
01/10/2008WO2007127779A3 Semiconductor device with improved contact fuse
01/10/2008US20080009118 Metal oxide semiconductor device and fabricating method thereof
01/10/2008US20080009116 Method for fabricating semiconductor device
01/10/2008US20080009113 Semiconductor device, method of manufacturing semiconductor device, and method of evaluating manufacturing process of semiconductor device
01/10/2008US20080009106 Method for manufacturing semiconductor device
01/10/2008US20080009087 Miniature optical element for wireless bonding in an electronic instrument
01/10/2008US20080008900 Ball Limiting Metallurgy, Interconnection Structure Including the Same, and Method of Forming an Interconnection Structure
01/10/2008US20080008222 Laser Irradiation Method and Apparatus, Method for Annealing Non-Single Cyrstal, and Method for Manufacturing Semiconductor Device
01/10/2008US20080008220 Semiconductor laser device and manufacturing method thereof
01/10/2008US20080007995 Memory cell having a switching active material, and corresponding memory device
01/10/2008US20080007985 Antifuse circuit with well bias transistor
01/10/2008US20080007318 Adaptive gate drive for switching devices of inverter
01/10/2008US20080007156 Luminescent materials having nanocrystals exhibiting multi-modal energy level distributions
01/10/2008US20080006951 Copper bonding compatible bond pad structure and method
01/10/2008US20080006949 Semiconductor package and method of fabricating the same
01/10/2008US20080006948 Stack die packages
01/10/2008US20080006939 Packaging of hybrib integrated circuits
01/10/2008US20080006937 Solderability Improvement Method for Leaded Semiconductor Package
01/10/2008US20080006916 Method of Manufacturing a Semiconductor Device
01/10/2008US20080006908 Body-tied, strained-channel multi-gate device and methods of manufacturing same
01/10/2008US20080006907 Non-volatile memory device including a variable resistance material
01/10/2008US20080006904 Semiconductor device and method of manufacturing same
01/10/2008US20080006903 Semiconductor device mounted with fuse memory
01/10/2008US20080006902 A mosfet fuse programmed by electromigration
01/10/2008US20080006901 Soi device with reduced junction capacitance
01/10/2008US20080006899 Schottky diode and method of fabricating the same
01/10/2008US20080006890 Magnetic storage device and method for producing the same
01/10/2008US20080006889 Monolithic MEMS and integrated circuit device having a barrier and method of fabricating the same
01/10/2008US20080006887 Semiconductor Devices Including Impurity Doped Region and Methods of Forming the Same
01/10/2008US20080006886 Semiconductor Device Manufactured Using a Non-Contact Implant Metrology
01/10/2008US20080006885 Semiconductor integrated circuit device and method of manufacturing
01/10/2008US20080006883 Nanostructured integrated circuits with capacitors
01/10/2008US20080006882 Spiral Inductor with High Quality Factor of Integrated Circuit
01/10/2008US20080006881 Semiconductor device with increased channel length and method for fabricating the same
01/10/2008US20080006880 Method and apparatus for mobility enhancement in a semiconductor device
01/10/2008US20080006879 Semiconductor integrated circuit device
01/10/2008US20080006877 Method of Forming a Solution Processed Device
01/10/2008US20080006875 Semiconductor device used in step-up DC-DC converter, and step-up DC-DC converter
01/10/2008US20080006874 Semiconductor component and method of manufacturing
01/10/2008US20080006873 Non-Volatile Memory Device Having SONOS Structure and Manufacturing Method Thereof
01/10/2008US20080006872 Charge-trap nonvolatile memory devices and methods of fabricating the same
01/10/2008US20080006871 Nonvolatile Memory Having Raised Source and Drain Regions
01/10/2008US20080006870 Nonvolatile semiconductor memory device having double floating gate structure and method of manufacturing the same
01/10/2008US20080006869 Nonvolatile semiconductor memory
01/10/2008US20080006868 Logic compatible storage device
01/10/2008US20080006867 Semiconductor device and method for manufacturing same
01/10/2008US20080006864 Semiconductor device and a manufacturing method thereof
01/10/2008US20080006863 Method for manufacturing a capacitor electrode structure
01/10/2008US20080006862 Compounds semiconductor-on-silicon wafer with a silicon nanowire buffer layer
01/10/2008US20080006861 Semiconductor device and manufacturing method thereof
01/10/2008US20080006860 Magnetoresistive effect element and magnetic memory device
01/10/2008US20080006856 Semiconductor device with back surface electrode including a stress relaxation film
01/10/2008US20080006855 CMOS Devices Adapted to Prevent Latchup and Methods of Manufacturing the Same
01/10/2008US20080006854 Mosfets comprising source/drain regions with slanted upper surfaces, and method for fabricating the same
01/10/2008US20080006853 Schottky Electrode of Nitride Semiconductor Device and Process for Production Thereof
01/10/2008US20080006852 DENSE CHEVRON finFET AND METHOD OF MANUFACTURING SAME
01/10/2008US20080006850 System and method for forming through wafer vias using reverse pulse plating
01/10/2008US20080006849 Fabricating method of nitride semiconductor substrate and composite material substrate
01/10/2008US20080006848 Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage
01/10/2008US20080006847 Semiconductor protective structure for electrostatic discharge
01/10/2008US20080006845 Enhancement mode field effect device and the method of production thereof
01/10/2008US20080006840 Light Emitting Devices with Improved Light Extraction Efficiency
01/10/2008US20080006838 Semiconductor light-emitting element and manufacturing method thereof
01/10/2008US20080006834 Panel substrate, display apparatus and manufacturing method thereof
01/10/2008US20080006833 Lighting device and liquid crystal display device
01/10/2008US20080006832 Led device with re-emitting semiconductor construction and converging optical element
01/10/2008US20080006831 Light-emitting crystal structures
01/10/2008US20080006830 Planar light source and method for fabricating the same
01/10/2008US20080006829 Semiconductor layered structure
01/10/2008US20080006828 Integral-type liquid crystal panel with image sensor function
01/10/2008US20080006826 Thin-film semiconductor device, lateral bipolar thin-film transistor, hybrid thin-film transistor, mos thin-film transistor, and method of fabricating thin-film transistor
01/10/2008US20080006825 Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device
01/10/2008US20080006823 High frequency diode and method for producing same
01/10/2008US20080006822 Light-emitting element, light-emitting device and an electronic device
01/10/2008US20080006821 Light-emitting element, light-emitting device, and electronic device
01/10/2008US20080006820 Organic light-emitting device with field-effect enhanced mobility
01/10/2008US20080006819 Moisture barrier coatings for organic light emitting diode devices
01/10/2008US20080006818 Structure and method to form multilayer embedded stressors
01/10/2008US20080006816 Intersubband detector with avalanche multiplier region
01/10/2008US20080006815 High efficient phosphor-converted light emitting diode
01/10/2008US20080006534 Deposition method for nanostructure materials
01/10/2008DE4442067B4 Programmierbare Permanentspeicherzelle Programmable non-volatile memory cell
01/10/2008DE19960503B4 Metall-Verbindungs-Kontakt-Struktur mit einem kleinen Kontaktwiderstand und einem geringen Übergangsverlust sowie Verfahren zur Herstellung derselben Metal connection contact structure with a small contact resistance and a low loss transition as well as methods for producing the same
01/10/2008DE112006000598T5 Transistoranordnung und Verfahren zur Herstellung derselben Transistor device and method of manufacturing the same
01/10/2008DE112006000522T5 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
01/10/2008DE10241172B4 Halbleiterspeicher mit vertikalen Speichertransistoren und Verfahren zu dessen Herstellung A semiconductor memory with vertical memory transistors and process for its preparation
01/10/2008DE102006031228A1 Mikromechanisches Bauelement, Verfahren und Verwendung Micromechanical component, process and
01/10/2008DE102006029751A1 Insulated gate bipolar transistor arrangement is formed in semiconductor material area, which has upper side and lower side, where doping field is provided for p-emitter and another doping field is provided for field stop zone
01/10/2008DE102006013203B3 Integrierte Halbleiteranordnung mit Rückstromkomplex zur Verringerung eines Substratstroms und Verfahren zu deren Herstellung An integrated semiconductor arrangement with reverse current complex substrate for reducing a current, and processes for their preparation
01/10/2008DE102005009019B4 Transistoranordnung mit Gate-Spacerstrukturen und Verfahren zu deren Herstellung Transistor arrangement with gate-spacer structures and processes for their preparation
01/09/2008EP1876649A1 Group iii nitride semiconductor device and epitaxial substrate
01/09/2008EP1876638A2 Method of manufacturing semiconductor device with a heterojunction
01/09/2008EP1875515A1 Binary group iii-nitride based high electron mobility transistors and methods of fabricating same
01/09/2008EP1875514A1 Aluminum free group iii-nitride based high electron mobility transistors and methods of fabricating same