| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
|---|
| 06/03/1994 | CA2110414A1 Electrode for use in plasma etching |
| 06/01/1994 | EP0599779A1 High-resolution negative photoresist having extended processing latitude |
| 06/01/1994 | EP0599763A1 Dual channel D.C. low noise measurement system and test methodology |
| 06/01/1994 | EP0599762A1 Method of forming sub-half micron patterns with optical lithography using bilayer resist |
| 06/01/1994 | EP0599761A1 A method of forming uniformly thin, isolated silicon mesas on an insulating substrate |
| 06/01/1994 | EP0599745A1 Protection structure against overvoltages for a vertical semiconductor device |
| 06/01/1994 | EP0599730A2 Semiconductor device and method of producing the same |
| 06/01/1994 | EP0599595A2 Ceramic electronic device and method of producing the same |
| 06/01/1994 | EP0599592A1 Self-aligned via |
| 06/01/1994 | EP0599591A1 Emitter follower transistor with improved thermal resistance characteristics |
| 06/01/1994 | EP0599571A2 Photoresist composition |
| 06/01/1994 | EP0599555A2 SRAM cell with balanced load resistors |
| 06/01/1994 | EP0599539A2 Method for forming a pattern by silylation |
| 06/01/1994 | EP0599516A2 Process for removing surface contaminants from III-V semiconductors |
| 06/01/1994 | EP0599506A1 Semiconductor memory cell with SOI MOSFET |
| 06/01/1994 | EP0599469A2 Method and device for designing layout of milliwave or microwave integrated circuit |
| 06/01/1994 | EP0599367A1 Focused ion beam processing with charge control |
| 06/01/1994 | EP0599318A2 Method for manufacturing semiconductor device having groove-structured isolation |
| 06/01/1994 | EP0599317A1 Palanarized interlayer insulating film formed of stacked BPSG film and ozone-teos NSG film in semiconductor device, and method for forming the same |
| 06/01/1994 | EP0599276A2 Method of removing particles from the surface of a substrate |
| 06/01/1994 | EP0599224A1 Light-emitting gallium nitride-based compound semiconductor device |
| 06/01/1994 | EP0599221A1 IGBT with bipolar transistor |
| 06/01/1994 | EP0599194A1 Flat-card-shaped electronic module |
| 06/01/1994 | EP0599074A1 Method for the global planarization of surfaces of integrated semiconductor circuits |
| 06/01/1994 | EP0599046A2 Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation |
| 06/01/1994 | EP0598974A2 Semiconductor integrated circuit |
| 06/01/1994 | EP0598895A1 Symmetrical multi-layer metal logic array with continuous substrate taps |
| 06/01/1994 | EP0598861A1 Method of fabrication optoelectronic components |
| 06/01/1994 | EP0598795A1 High performance passivation for semiconductor devices |
| 06/01/1994 | EP0598794A1 High frequency jfet and method for fabricating the same |
| 06/01/1994 | EP0598755A1 Process for the production of electroluminescent silicon features |
| 06/01/1994 | EP0524951B1 Process for manufacturing micro-mechanical sensors |
| 06/01/1994 | EP0391923B1 Integrated circuit with anti-''latch-up'' circuit obtained using complementary mos circuit technology |
| 06/01/1994 | EP0328655B1 Pattern-forming process utilizing radiation-induced graft polymerization reaction |
| 06/01/1994 | EP0299987B1 Ball bonding process and device |
| 06/01/1994 | DE4343606A1 Doping layer diffusion below semiconductor surface - inserting silicon@ crystals into closable container saturated by doping element for gas exchange |
| 06/01/1994 | DE4340419A1 Mfg. semiconductor component with first film on substrate - includes forming etching mask with aperture on films, leaving part of film free |
| 06/01/1994 | DE4340405A1 Semiconductor module mfr. including insulating layer - obtd. by implanting dopant in region of semiconductor substrate through insulating layer |
| 06/01/1994 | DE4306957C1 Semiconductor wafer magazine compartment indexing apparatus - has opto-electronic sensor determining position of both wafer and compartment w.r.t. reference plane having fixed relationship to handling plane |
| 06/01/1994 | CN1087447A Technique of making P-N junction by use of two-step annealing |
| 06/01/1994 | CN1087446A Manufacturing method of a semiconductor device |
| 05/31/1994 | US5317698 FPGA architecture including direct logic function circuit to I/O interconnections |
| 05/31/1994 | US5317534 A mask read only memory device |
| 05/31/1994 | US5317532 Semiconductor memory device having voltage stress testing capability |
| 05/31/1994 | US5317492 Rapid thermal heating apparatus and method |
| 05/31/1994 | US5317450 Projection exposure apparatus |
| 05/31/1994 | US5317436 A slide assembly for projector with active matrix moveably mounted to housing |
| 05/31/1994 | US5317433 Image display device with a transistor on one side of insulating layer and liquid crystal on the other side |
| 05/31/1994 | US5317338 Visual measurement technique and test pattern for aperture offsets in photoplotters |
| 05/31/1994 | US5317302 Diamond thermistor |
| 05/31/1994 | US5317257 Burn-in apparatus and burn-in board removing method using movable cooling enclosure |
| 05/31/1994 | US5317242 Motor-driving circuit and wire-bonding apparatus |
| 05/31/1994 | US5317236 Single crystal silicon arrayed devices for display panels |
| 05/31/1994 | US5317197 Semiconductor device |
| 05/31/1994 | US5317193 Contact via for semiconductor device |
| 05/31/1994 | US5317192 Semiconductor contact via structure having amorphous silicon side walls |
| 05/31/1994 | US5317191 Semiconductor bonded to support with melted, then solidified lead-tin alloy containing dispersed lead particles |
| 05/31/1994 | US5317190 Oxygen assisted ohmic contact formation to N-type gallium arsenide |
| 05/31/1994 | US5317188 Means for and methods of testing automated tape bonded semiconductor devices |
| 05/31/1994 | US5317187 Ti/TiN/Ti contact metallization |
| 05/31/1994 | US5317182 Termination of the power stage of a monolithic semiconductor device |
| 05/31/1994 | US5317180 Vertical DMOS transistor built in an n-well MOS-based BiCMOS process |
| 05/31/1994 | US5317179 Non-volatile semiconductor memory cell |
| 05/31/1994 | US5317178 Offset dual gate thin film field effect transistor |
| 05/31/1994 | US5317177 Semiconductor device and method of manufacturing the same |
| 05/31/1994 | US5317175 CMOS device with perpendicular channel current directions |
| 05/31/1994 | US5317161 Ion source |
| 05/31/1994 | US5317141 Apparatus and method for high-accuracy alignment |
| 05/31/1994 | US5317106 Coplanar corrector ring |
| 05/31/1994 | US5317081 Microwave processing |
| 05/31/1994 | US5316984 Bright field wafer target |
| 05/31/1994 | US5316983 Apparatus for analysis of particulate material, analytical method for same, apparatus for production of ultrapure water, apparatus for manufacturing of semiconductor, and apparatus for production of pure gas |
| 05/31/1994 | US5316982 Semiconductor device and method for preparing the same |
| 05/31/1994 | US5316981 Method for achieving a high quality thin oxide using a sacrificial oxide anneal |
| 05/31/1994 | US5316980 Method of making a semiconductor device by dry etching process |
| 05/31/1994 | US5316979 RIE process for fabricating submicron, silicon electromechanical structures |
| 05/31/1994 | US5316978 Forming resistors for intergrated circuits |
| 05/31/1994 | US5316977 Method of manufacturing a semiconductor device comprising metal silicide |
| 05/31/1994 | US5316976 Bonding pad, integrated circuits |
| 05/31/1994 | US5316975 Method of forming multilevel interconnections in a semiconductor integrated circuit |
| 05/31/1994 | US5316974 Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer |
| 05/31/1994 | US5316972 Vapor deposition |
| 05/31/1994 | US5316971 Methods for programming antifuses having at least one metal electrode |
| 05/31/1994 | US5316970 Generation of ionized air for semiconductor chips |
| 05/31/1994 | US5316969 Method of shallow junction formation in semiconductor devices using gas immersion laser doping |
| 05/31/1994 | US5316967 Using insulating film as mask to produce a ridge having reverse mesa shape |
| 05/31/1994 | US5316966 Method of providing mask alignment marks |
| 05/31/1994 | US5316965 Doping nitrogen to silicon oxide layer to form oxynitride; forming sacrificial oxide layer and selectively etching |
| 05/31/1994 | US5316964 Method of forming integrated circuits with diffused resistors in isolation regions |
| 05/31/1994 | US5316963 Method for producing semiconductor device |
| 05/31/1994 | US5316961 Floating gate type erasable and programmable read only memory cell, method of making the same, and electrically erasing and writing method |
| 05/31/1994 | US5316960 C-MOS thin film transistor device manufacturing method |
| 05/31/1994 | US5316959 Trenched DMOS transistor fabrication using six masks |
| 05/31/1994 | US5316958 Method of dopant enhancement in an epitaxial silicon layer by using germanium |
| 05/31/1994 | US5316896 Method of forming a pattern |
| 05/31/1994 | US5316895 Photolithographic method using non-photoactive resins |
| 05/31/1994 | US5316891 Fine pattern forming method |
| 05/31/1994 | US5316879 Sub-micron device fabrication using multiple aperture filter |
| 05/31/1994 | US5316878 Pattern forming method and photomasks used therefor |
| 05/31/1994 | US5316853 Expand tape |