Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
06/2013
06/06/2013US20130143363 Adhesive composition for semiconductor and adhesive film comprising the same
06/06/2013US20130143362 Organic electronic devices
06/06/2013US20130143361 Packaging Process Tools and Systems, and Packaging Methods for Semiconductor Devices
06/06/2013US20130143360 Semiconductor structure and method for making the same
06/06/2013US20130143359 Semiconductor device and a manufacturing method of the same
06/06/2013US20130143358 Method for manufacturing oxide thin film transistor
06/06/2013US20130143348 Heat treatment method of semiconductor wafers, manufacturing method of solar battery, and heat treatment device
06/06/2013US20130143338 Methods of fabrication of high-density laser diode stacks
06/06/2013US20130143164 Polymerizable composition
06/06/2013US20130143038 Pseudo-substrate for use in the production of semiconductor components and method for producing a pseudo-substrate
06/06/2013US20130142979 Thermoformed IC Trays Of Poly(Phenylene Ether) Compositions
06/06/2013US20130142595 Vacuum processing apparatus and operating method of the same
06/06/2013US20130142594 Methods for Transporting Wafers Between Wafer Holders and Chambers
06/06/2013US20130142478 Method and apparatus for aligning a laser diode on a slider structure
06/06/2013US20130141967 Variable resistive memory device and method of fabricating the same
06/06/2013US20130141963 Methods and Apparatus for FinFET SRAM Cells
06/06/2013US20130141910 Method for assembling LEDs to a ceramic heat conductive piece and a structure produced by the method
06/06/2013US20130141833 Mobile electrostatic carriers for thin wafer processing
06/06/2013US20130141708 Substrate processing method, manufacturing method of euv mask, and euv mask
06/06/2013US20130141089 Semiconductor GMI Magnetometer
06/06/2013US20130140838 Mobile vacuum carriers for thin wafer processing
06/06/2013US20130140752 Method and jig for holding silicon wafer
06/06/2013US20130140713 Interposer Wafer Bonding Method and Apparatus
06/06/2013US20130140712 Array Substrate, LCD Device, and Method for Manufacturing Array Substrate
06/06/2013US20130140709 Semiconductor device and method of manufacturing the same
06/06/2013US20130140708 Semiconductor device and method of fabricating the same
06/06/2013US20130140707 Semiconductor device and layout design method for the same
06/06/2013US20130140706 UBM Structures for Wafer Level Chip Scale Packaging
06/06/2013US20130140705 Circuit connector apparatus and method therefor
06/06/2013US20130140704 Low Frequency CMUT with Thick Oxide
06/06/2013US20130140701 Solderable Contact and Passivation for Semiconductor Dies
06/06/2013US20130140700 Method of manufacturing a semiconductor device and semiconductor device
06/06/2013US20130140698 Doped Tantalum Nitride for Copper Barrier Applications
06/06/2013US20130140693 Method for forming an integrated circuit
06/06/2013US20130140691 Semiconductor Device and Method of Forming Patterned Repassivation Openings Between RDL and UBM to Reduce Adverse Effects of Electro-Migration
06/06/2013US20130140690 TSV Structures and Methods for Forming the Same
06/06/2013US20130140688 Through Silicon Via and Method of Manufacturing the Same
06/06/2013US20130140686 Semiconductor package structure and manufacturing method thereof
06/06/2013US20130140685 Electronic Device and a Method for Fabricating an Electronic Device
06/06/2013US20130140683 Semiconductor Device and Method of Forming Cavity in Build-Up Interconnect Structure for Short Signal Path Between Die
06/06/2013US20130140682 Buried word line and method for forming buried word line in semiconductor device
06/06/2013US20130140669 Semiconductor device and method of manufacturing the same
06/06/2013US20130140668 Forming Structures on Resistive Substrates
06/06/2013US20130140667 Localized carrier lifetime reduction
06/06/2013US20130140655 Mems acoustic transducer and method for fabricating the same
06/06/2013US20130140654 Low Frequency CMUT with Vent Holes
06/06/2013US20130140650 MEMS Devices and Methods for Forming the Same
06/06/2013US20130140646 Transistor with reduced depletion field width
06/06/2013US20130140643 Integrated high-k/metal gate in cmos process flow
06/06/2013US20130140639 High gate density devices and methods
06/06/2013US20130140635 Semiconductor device and method of manufacturing the same
06/06/2013US20130140634 Method of replacing silicon with metal in integrated circuit chip fabrication
06/06/2013US20130140633 Edge termination for super junction mosfet devices
06/06/2013US20130140632 Lateral Transistor Component and Method for Producing Same
06/06/2013US20130140631 Semicondutor isolation structure and method of manufacture
06/06/2013US20130140630 Trench schottky diode and manufacturing method thereof
06/06/2013US20130140629 Insulated gate field effect transistor having passivated schottky barriers to the channel
06/06/2013US20130140621 Flash memory
06/06/2013US20130140620 Flash Memory and Manufacturing Method Thereof
06/06/2013US20130140605 GaN high voltage HFET with passivation plus gate dielectric multilayer structure
06/06/2013US20130140583 Silicon carbide semiconductor device and method for manufacturing the same
06/06/2013US20130140582 Semiconductor device and method for manufacturing same
06/06/2013US20130140579 Method of integrating a plurality of benzocyclobutene layers with a substrate and an associated device
06/06/2013US20130140577 Semiconductor Device and Method for Preparing the Same
06/06/2013US20130140576 Semiconductor device and method for manufacturing the same
06/06/2013US20130140573 Manufacturing method for crystalline semiconductor film, semiconductor device, and display device
06/06/2013US20130140567 Silicon substrate, epitaxial structure including the same, and method of manufacturing the silicon substrate
06/06/2013US20130140551 Transistors, methods of manufacturing the same, and electronic devices including transistors
06/06/2013US20130140525 Gallium nitride growth method on silicon substrate
06/06/2013US20130140517 Thin and Flexible Gallium Nitride and Method of Making the Same
06/06/2013US20130140516 Protruding post resistive memory devices and methods of manufacturing the same
06/06/2013US20130140513 Thermally confined electrode for programmable resistance memory
06/06/2013US20130140512 Nonvolatile resistive memory element with a passivated switching layer
06/06/2013US20130140503 Precursor composition for forming amorphous metal oxide semiconductor layer, amorphous metal oxide semiconductor layer, method for producing same, and semiconductor device
06/06/2013US20130139966 Jig for use in etching and chemical lift-off apparatus including the same
06/06/2013US20130139946 Process for bonding two substrates
06/06/2013US20130139851 Post cmp scrubbing of substrates
06/06/2013DE112011102681T5 Induktionsheizvorrichtung und lnduktionsheizverfahren Induction heating and lnduktionsheizverfahren
06/06/2013DE112011102644T5 Integrierte Halbleiterschaltung A semiconductor integrated circuit
06/06/2013DE112011102414T5 Verfahren zur Herstellung isolierter Kondensatoren und Struktur daraus Process for the production of insulated capacitors and structure thereof
06/06/2013DE112011102331T5 Verfahren zum schnellen Schätzen bindender Lithografiestrukturen in einem Layout einer integrierten Schaltung A method for quickly estimating binding lithographic structures in a layout of an integrated circuit
06/06/2013DE112011102327T5 Schichtbildungsvorrichtung Film forming apparatus
06/06/2013DE112011102263T5 Halbleitervorrichtung Semiconductor device
06/06/2013DE112010003403T5 Transistoren mit einer Gate-Isolationsschicht mit einer Kanalverarmungsgrenzschichtladung und diesbezügliches Herstellungsverfahren Transistors with a gate insulating layer with a channel depletion boundary layer charge, and to this effect production method
06/06/2013DE102013205563A1 Fixing crystal on a saw strip, comprises providing an adhesive layer, which is interrupted by adhesive-free regions, between the crystal and the saw strip by inserting an adhesive between them
06/06/2013DE102012221690A1 4H-SiC-Halbleiterelement und Halbleitervorrichtung 4H-SiC semiconductor element and semiconductor device
06/06/2013DE102012220825A1 Verbesserung des polysilicium/metall- kontaktwiderstands in einem tiefen graben Dig improving the polysilicon / metal-contact resistor in a deep
06/06/2013DE102012220824A1 Eingebettete brücke mit niedrigem widerstand für einen grabenkondensator Embedded bridge with low resistance for a grave capacitor
06/06/2013DE102012220822A1 Finfet mit verbesserter gate-planarität FinFET with improved gate-planarity
06/06/2013DE102012111654A1 Elektronisches Bauelement und ein Verfahren zur Herstellung eines elektronischen Bauelements Electronic component and a method for manufacturing an electronic component
06/06/2013DE102012111633A1 Prüfkörperanordnung zum Untersuchen von Leistungshalbleitervorrichtungen und Inspektionsvorrichtung, die diese verwendet Test body for inspecting the power semiconductor devices and inspection apparatus using this
06/06/2013DE102012111632A1 Inspektionsvorrichtung für Halbleitervorrichtungen und Klemmstufe, die für die Inspektionsvorrichtung verwendet wird An inspection apparatus for semiconductor devices and terminal stage, which is used for the inspection device
06/06/2013DE102012104197A1 Verfahren für das Ausbilden einer Verbindung in einer Solarzelle A method for forming a connection in a solar cell
06/06/2013DE102012101875A1 Vorrichtung mit hoher Gatedichte und Verfahren zu deren Herstellung Device with high gate density and methods for their preparation
06/06/2013DE102012100825A1 Vorrichtung zum Bearbeiten eines Substrats und Verfahren hierzu An apparatus for processing a substrate and method therefor
06/06/2013DE102012023503A1 Legierter 2N-Kupferdraht zum Bonden in Mikroelektronikgeräten Alloy 2N copper wire for bonding in microelectronic devices
06/06/2013DE102012023501A1 Sekundär legierter 1N-Kupferdraht zum Bonden in Mikroelektronikgeräten Secondary alloy 1N copper wire for bonding in microelectronic devices
06/06/2013DE102012023500A1 3N-Kupferdraht mit Spurenmengen von Zusatzstoffen zum Bonden in Mikroelektronikgeräten 3N copper wire with trace amounts of additives for bonding in microelectronic devices
06/06/2013DE102012023499A1 Dotierter 4N-Kupferdraht zum Bonden in Mikroelektronikgeräten Doped 4N copper wire for bonding in microelectronic devices
06/06/2013DE102011120133A1 Apparatus for wet-chemical treatment of substrate, has liquid-based seal that is provided in transition region between outer wall and container for shielding of gaseous substance or treatment liquid relative to environment