Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
09/2005
09/08/2005US20050198404 Semiconductor device and electronic apparatus
09/08/2005US20050197817 Interference analysis method, interference analysis device, interference analysis program and recording medium with interference analysis program recorded thereon
09/08/2005US20050197816 Circuit simulation system with simulation models assigned based on layout information and connection information
09/08/2005US20050197730 System and method for process contamination prevention for semiconductor manufacturing
09/08/2005US20050197242 having a low average thermal expansion together with good polishability and processability; optical component; reticle mask
09/08/2005US20050197046 Chemical mechanical polishing method, chemical mechanical polishing system, and manufacturing method of semiconductor device
09/08/2005US20050197031 Method for manufacturing an electro-optical device
09/08/2005US20050196981 Integrated circuit chip, electronic device and method of manufacturing the same, and electronic instrument
09/08/2005US20050196977 Method of forming silicon nitride film and method of manufacturing semiconductor device
09/08/2005US20050196976 Methods of filling gaps using high density plasma chemical vapor deposition
09/08/2005US20050196975 Method of manufacturing a compound semiconductor by heating a layered structure including rare earth transition metal
09/08/2005US20050196974 Compositions for preparing low dielectric materials containing solvents
09/08/2005US20050196973 Plasma nitriding method
09/08/2005US20050196972 Semiconductor component having at least one organic semiconductor layer and method for fabricating the same
09/08/2005US20050196971 Hardware development to reduce bevel deposition
09/08/2005US20050196970 Novel deposition of high-k MSiON dielectric films
09/08/2005US20050196969 Method of preparation of organic optoelectronic and electronic devices and devices thereby obtained
09/08/2005US20050196968 Method for generating a structure on a substrate
09/08/2005US20050196967 System and method for removal of photoresist and residues following contact etch with a stop layer present
09/08/2005US20050196965 Method for manufacturing semiconductor device
09/08/2005US20050196964 Dummy fill for integrated circuits
09/08/2005US20050196963 Methods and apparatuses for electrochemical-mechanical polishing
09/08/2005US20050196962 Method for forming a self-aligned germanide and devices obtained thereof
09/08/2005US20050196961 Method for forming a semiconductor device having metal silicide
09/08/2005US20050196960 Method of forming metal silicide film and method of manufacturing semiconductor device having metal silicide film
09/08/2005US20050196959 Semiconductor device and manufacturing process therefor as well as plating solution
09/08/2005US20050196958 Liquid discharge head and manufacturing method thereof
09/08/2005US20050196957 Semiconductor device manufacturing method thereof
09/08/2005US20050196956 Low stress barrier layer removal
09/08/2005US20050196955 Method to increase mechanical fracture robustness of porous low k dielectric materials
09/08/2005US20050196954 Method for manufacturing semiconductor integrated circuit device
09/08/2005US20050196953 Method for forming wiring of semiconductor device
09/08/2005US20050196952 Method for production of a semiconductor structure
09/08/2005US20050196951 Method of forming dual damascene structures
09/08/2005US20050196950 Method of producing layered assembly and a layered assembly
09/08/2005US20050196949 Solder ball excellent in micro-adhesion preventing properties and wetting properties and method for preventing the micro-adhesion of solder balls
09/08/2005US20050196948 Method for forming a semiconductor device
09/08/2005US20050196947 Recess type MOS transistor and method of manufacturing same
09/08/2005US20050196946 Method for manufacturing solid-state imaging device
09/08/2005US20050196945 Methods of forming a double metal salicide layer and methods of fabricating semiconductor devices incorporating the same
09/08/2005US20050196944 Semiconductor device and method of manufacturing the same
09/08/2005US20050196942 Protective tape for use in grinding back of semiconductor wafer and method of fabricating semiconductor device
09/08/2005US20050196941 DBG system and method with adhesive layer severing
09/08/2005US20050196940 Water jet processing method
09/08/2005US20050196939 Method and apparatus of fabricating a semiconductor device by back grinding and dicing
09/08/2005US20050196938 Novel method to make corner cross-grid structures in copper metallization
09/08/2005US20050196937 Methods for forming a semiconductor structure
09/08/2005US20050196936 Methods for thermally treating a semiconductor layer
09/08/2005US20050196935 Semiconductor device and process for producing the same
09/08/2005US20050196934 SOI substrate and method of manufacturing the same
09/08/2005US20050196932 Method of creating deep trench capacitor using A P+ metal electrode
09/08/2005US20050196931 Self-aligned lateral heterojunction bipolar transistor
09/08/2005US20050196930 Method of making bipolar transistors and resulting product
09/08/2005US20050196929 Low-thermal-budget gapfill process
09/08/2005US20050196928 Method of reducing STI divot formation during semiconductor device fabrication
09/08/2005US20050196927 Process for integration of a high dielectric constant gate insulator layer in a CMOS device
09/08/2005US20050196926 Strained silicon-channel MOSFET using a damascene gate process
09/08/2005US20050196924 Semiconductor device and its manufacture method
09/08/2005US20050196923 SONOS memory cells and arrays and method of forming the same
09/08/2005US20050196922 Method for producing semiconductor memory devices and integrated memory device
09/08/2005US20050196921 Method of forming capacitor over bitline contact
09/08/2005US20050196920 Semiconductor device with rare metal electrode
09/08/2005US20050196919 Top oxide nitride liner integration scheme for vertical DRAM
09/08/2005US20050196918 DRAM memory and method for fabricating a DRAM memory cell
09/08/2005US20050196917 Method for forming a (111) oriented BSTO thin film layer for high dielectric constant capacitors
09/08/2005US20050196916 Semiconductor device and manufacturing process therefor
09/08/2005US20050196915 Method of fabricating analog capacitor using post-treatment technique
09/08/2005US20050196914 Method of manufacturing semiconductor device
09/08/2005US20050196913 Floating gate memory structures and fabrication methods
09/08/2005US20050196912 Planar pedestal multi gate device
09/08/2005US20050196911 Method for fabricating active-matrix display device
09/08/2005US20050196910 Method of manufacturing a semiconductor device and electronic equipment
09/08/2005US20050196909 Method and circuit for adjusting a resistance in an integrated circuit
09/08/2005US20050196908 System and method for forming mold caps over integrated circuit devices
09/08/2005US20050196907 Underfill system for die-over-die arrangements
09/08/2005US20050196906 Microelectronic or optoelectronic package having a polybenzoxazine-based film as an underfill material
09/08/2005US20050196905 Semiconductor device featuring fine windows formed in oxide layer of semiconductor substrate thereof, and production method for manufacturing such semiconductor device
09/08/2005US20050196904 Aerodynamic memory module cover
09/08/2005US20050196903 Semiconductor device and method of manufacturing the same
09/08/2005US20050196902 Method of fabricating film carrier
09/08/2005US20050196901 Device mounting method and device transport apparatus
09/08/2005US20050196900 Substrate protection system, device and method
09/08/2005US20050196899 Method and apparatus for cleaving a wafer through expansion resulting from vaporization or freezing of liquid
09/08/2005US20050196898 Process of plating through hole
09/08/2005US20050196897 Method and apparatus for joining semiconductor
09/08/2005US20050196894 Three-dimensional quantum dot structure for infrared photodetection
09/08/2005US20050196891 Providing a charge dissipation structure for an electrostatically driven device
09/08/2005US20050196890 Ultra-shallow photodiode using indium
09/08/2005US20050196888 Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate
09/08/2005US20050196887 Group III-nitride based led having a transparent current spreading layer
09/08/2005US20050196884 Method of evaluating semiconductor device
09/08/2005US20050196883 Evaluation method using a TEG, a method of manufacturing a semiconductor device having a TEG, an element substrate and a panel having the TEG, a program for controlling dosage and a computer-readable recording medium recording the program
09/08/2005US20050196881 Method for analyzing metal element on surface of wafer
09/08/2005US20050196880 High resolution cross-sectioning of polysilicon features with a dual beam tool
09/08/2005US20050196879 Method of planarizing spin-on material layer and manufacturing photoresist layer
09/08/2005US20050196878 Single-phase c-axis doped PGO ferroelectric thin films
09/08/2005US20050196713 Adding fluorinated polyether additive to a dispersion of electrophoretic pigment-containing microparticles dispersed in a dielectric solvent prepared by microencapsulation; improved colloidal stability, switching performance and temperature latitude
09/08/2005US20050196712 Irradiating electron beams onto a film on a surface of an object to be processed to modify a quality of the film; measuring an intensity of the emission spectrum; detecting an end point of the process based on the intensity of the emission spectrum
09/08/2005US20050196711 Forming a light absorption layer over a substrate; forming a first region over the light absorption layer; generating a heat by irradiating the light absorption layer with a laser light; andforming a first film pattern by heating the first region with the heat
09/08/2005US20050196710 Forming a first region including a light-absorbing material; forming a second region by modifying a surface of the substrate by irradiating a with laser having a wavelength which is absorbed by the light-absorbing material; forming a pattern by discharging a compound including a pattern forming material