Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2006
12/26/2006US7154182 Localized slots for stress relieve in copper
12/26/2006US7154181 Semiconductor device and method of manufacturing the same
12/26/2006US7154180 Electronic device, method of manufacture of the same, and sputtering target
12/26/2006US7154179 Semiconductor device
12/26/2006US7154178 Multilayer diffusion barrier for copper interconnections
12/26/2006US7154176 Conductive bumps with non-conductive juxtaposed sidewalls
12/26/2006US7154173 Semiconductor device and manufacturing method of the same
12/26/2006US7154172 Integrated circuit carrier
12/26/2006US7154168 Flip chip in leaded molded package and method of manufacture thereof
12/26/2006US7154166 Low profile ball-grid array package for high power
12/26/2006US7154164 Semiconductor integrated circuit device and process for manufacturing the same
12/26/2006US7154163 Epitaxial structure of gallium nitride series semiconductor device utilizing two buffer layers
12/26/2006US7154162 Integrated circuit capacitor structure
12/26/2006US7154161 Composite ground shield for passive components in a semiconductor die
12/26/2006US7154160 Semiconductor fuse box and method for fabricating the same
12/26/2006US7154159 Trench isolation structure and method of forming the same
12/26/2006US7154158 Semiconductor device having MIM structure resistor
12/26/2006US7154154 MOS transistors having inverted T-shaped gate electrodes
12/26/2006US7154153 Memory device
12/26/2006US7154152 Semiconductor device
12/26/2006US7154151 Semiconductor device
12/26/2006US7154148 Hybrid circuit and electronic device using same
12/26/2006US7154146 Dielectric plug in mosfets to suppress short-channel effects
12/26/2006US7154145 Insulated gate transistor incorporating diode
12/26/2006US7154144 Self-aligned inner gate recess channel transistor and method of forming the same
12/26/2006US7154143 Non-volatile memory devices and methods of fabricating the same
12/26/2006US7154142 Non-volatile memory device and manufacturing method and operating method thereof
12/26/2006US7154139 Embedded capacitors using conductor filled vias
12/26/2006US7154138 Transistor-arrangement, method for operating a transistor arrangement as a data storage element and method for producing a transistor-arrangement
12/26/2006US7154135 Double-gated transistor circuit
12/26/2006US7154133 Semiconductor device and method of manufacture
12/26/2006US7154132 Semiconductor device with dummy electrode
12/26/2006US7154131 Nitride semiconductor substrate and method of producing same
12/26/2006US7154130 Semiconductor device provided by silicon carbide substrate and method for manufacturing the same
12/26/2006US7154128 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device
12/26/2006US7154125 Nitride-based semiconductor light-emitting device and manufacturing method thereof
12/26/2006US7154120 Light emitting device and fabrication method thereof
12/26/2006US7154119 Thin film transistor with plural channels and corresponding plural overlapping electrodes
12/26/2006US7154118 Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
12/26/2006US7154113 Techniques for wafer prealignment and sensing edge position
12/26/2006US7154106 Composite system of scanning electron microscope and focused ion beam
12/26/2006US7154105 Method of exposing using electron beam
12/26/2006US7154090 Method for controlling charged particle beam, and charged particle beam apparatus
12/26/2006US7154048 Common electrode wire for plating
12/26/2006US7154047 Via structure of packages for high frequency semiconductor devices
12/26/2006US7153788 Method and apparatus for attaching a workpiece to a workpiece support
12/26/2006US7153787 CVD plasma assisted lower dielectric constant SICOH film
12/26/2006US7153786 Method of fabricating lanthanum oxide layer and method of fabricating MOSFET and capacitor using the same
12/26/2006US7153785 Method of producing annealed wafer and annealed wafer
12/26/2006US7153784 Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
12/26/2006US7153783 Materials with enhanced properties for shallow trench isolation/premetal dielectric applications
12/26/2006US7153782 Effective solution and process to wet-etch metal-alloy films in semiconductor processing
12/26/2006US7153781 Method to etch poly Si gate stacks with raised STI structure
12/26/2006US7153780 Method and apparatus for self-aligned MOS patterning
12/26/2006US7153779 Method to eliminate striations and surface roughness caused by dry etch
12/26/2006US7153778 Methods of forming openings, and methods of forming container capacitors
12/26/2006US7153777 Methods and apparatuses for electrochemical-mechanical polishing
12/26/2006US7153776 Method for reducing amine based contaminants
12/26/2006US7153775 Conductive material patterning methods
12/26/2006US7153774 Method of making a semiconductor device that has copper damascene interconnects with enhanced electromigration reliability
12/26/2006US7153773 TiSiN film forming method, diffusion barrier TiSiN film, semiconductor device, method of fabricating the same and TiSiN film forming system
12/26/2006US7153772 Methods of forming silicide films in semiconductor devices
12/26/2006US7153771 Method for forming metal contact in semiconductor device
12/26/2006US7153770 Method of manufacturing semiconductor device and semiconductor device manufactured using the same
12/26/2006US7153769 Methods of forming a reaction product and methods of forming a conductive metal silicide by reaction of metal with silicon
12/26/2006US7153768 Backside coating for MEMS wafer
12/26/2006US7153767 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing
12/26/2006US7153766 Metal barrier cap fabrication by polymer lift-off
12/26/2006US7153765 Method of assembling soldered packages utilizing selective solder deposition by self-assembly of nano-sized solder particles
12/26/2006US7153764 Method of manufacturing a semiconductor device including a bump forming process
12/26/2006US7153763 Method for making a semiconductor device including band-engineered superlattice using intermediate annealing
12/26/2006US7153762 Method of fabricating polycrystalline silicon thin film for improving crystallization characteristics and method of fabricating liquid crystal display device using the same
12/26/2006US7153761 Method of transferring a thin crystalline semiconductor layer
12/26/2006US7153760 Using acoustic energy including two lasers to activate implanted species
12/26/2006US7153759 Method of fabricating microelectromechanical system structures
12/26/2006US7153758 Anodic bonding method and electronic device having anodic bonding structure
12/26/2006US7153757 Method for direct bonding two silicon wafers for minimising interfacial oxide and stresses at the bond interface, and an SOI structure
12/26/2006US7153756 Bonded SOI with buried interconnect to handle or device wafer
12/26/2006US7153755 Process to improve programming of memory cells
12/26/2006US7153754 Forming a layer of organic polymer on a semiconductor device structure;polymerizing the organic polymer to form solid matrix; forming voids in the organic polymer, includingembedding microcapsule, exposing the semiconductor device structure to a catalyst to substantially remove the filler
12/26/2006US7153753 Strained Si/SiGe/SOI islands and processes of making same
12/26/2006US7153752 Methods for forming capacitors and contact holes of semiconductor devices simultaneously
12/26/2006US7153751 Method of forming a capacitor
12/26/2006US7153750 Methods of forming capacitors of semiconductor devices including silicon-germanium and metallic electrodes
12/26/2006US7153749 Method of tuning threshold voltages of interdiffusible structures
12/26/2006US7153748 Semiconductor devices and methods for fabricating the same
12/26/2006US7153747 Method for making a transistor on a SiGe/SOI substrate
12/26/2006US7153746 Capacitors, methods of forming capacitors, and methods of forming capacitor dielectric layers
12/26/2006US7153745 Recessed gate transistor structure and method of forming the same
12/26/2006US7153744 Method of forming self-aligned poly for embedded flash
12/26/2006US7153743 Methods of fabricating non-volatile memory devices
12/26/2006US7153742 Method for fabricating flash memory device
12/26/2006US7153741 Use of selective epitaxial silicon growth in formation of floating gates
12/26/2006US7153740 Fabrication of lean-free stacked capacitors
12/26/2006US7153739 Method for manufacturing a capacitor of a semiconductor device
12/26/2006US7153738 Method for making a trench memory cell
12/26/2006US7153737 Self-aligned, silicided, trench-based, DRAM/EDRAM processes with improved retention
12/26/2006US7153736 Methods of forming capacitors and methods of forming capacitor dielectric layers
12/26/2006US7153735 Method of manufacturing semiconductor device
12/26/2006US7153734 CMOS device with metal and silicide gate electrodes and a method for making it