Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2006
12/28/2006US20060292880 Methods of fabricating p-type transistors including germanium channel regions and related devices
12/28/2006US20060292879 Method for peeling off semiconductor element and method for manufacturing semiconductor device
12/28/2006US20060292878 Method for fabricating semiconductor element
12/28/2006US20060292877 Semiconductor substrates including vias of nonuniform cross section, methods of forming and associated structures
12/28/2006US20060292876 Plasma etching method and apparatus, control program and computer-readable storage medium
12/28/2006US20060292875 Method for enhancing electrode surface area in DRAM cell capacitors
12/28/2006US20060292874 method for forming tungsten materials during vapor deposition processes
12/28/2006US20060292873 Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same
12/28/2006US20060292872 Atomic layer deposition of thin films on germanium
12/28/2006US20060292871 Methods of forming titanium-containing materials, and semiconductor processing methods
12/28/2006US20060292870 chemical-mechanical polishing mixture of a cationic abrasive, a cationic acrylamide-diallyldimethylammonium chloride copolymer and water; pH of 6 or less; selectivity for removal of silicon nitride over removal of silicon oxide
12/28/2006US20060292869 Tungsten plug corrosion prevention method using ionized air
12/28/2006US20060292868 Surface emitting semiconductor laser
12/28/2006US20060292867 Method of forming metal line in semiconductor device
12/28/2006US20060292866 Low temperature method for fabricating high-aspect ratio vias and devices fabricated by said method
12/28/2006US20060292865 Semiconductor device
12/28/2006US20060292864 Plasma-enhanced cyclic layer deposition process for barrier layers
12/28/2006US20060292863 Preventing damage to metal using clustered processing and at least partially sacrificial encapsulation
12/28/2006US20060292862 Method for forming barrier metal of semiconductor device
12/28/2006US20060292861 Method for making integrated circuit chip having carbon nanotube composite interconnection vias
12/28/2006US20060292860 Prevention of post cmp defects in cu/fsg process
12/28/2006US20060292859 Damascene process using dielectic layer containing fluorine and nitrogen
12/28/2006US20060292858 Techniques to create low K ILD for beol
12/28/2006US20060292857 Methods for making integrated-circuit wiring from copper, silver, gold, and other metals
12/28/2006US20060292856 Method of patterning a porous dielectric material
12/28/2006US20060292855 Current-aligned auto-generated non-equiaxial hole shape for wiring
12/28/2006US20060292854 Manufacturing method of dual damascene structure
12/28/2006US20060292853 Method for fabricating an integrated semiconductor circuit and semiconductor circuit
12/28/2006US20060292852 Back end interconnect with a shaped interface
12/28/2006US20060292851 Circuitry component and method for forming the same
12/28/2006US20060292850 Method for manufacturing semiconductor device and non-volatile memory
12/28/2006US20060292849 Ultrathin semiconductor circuit having contact bumps and corresponding production method
12/28/2006US20060292848 Method for manufacturing nano-gap electrode device
12/28/2006US20060292847 Silver barrier layers to minimize whisker growth in tin electrodeposits
12/28/2006US20060292846 Material management in substrate processing
12/28/2006US20060292845 Processing substrates using site-isolated processing
12/28/2006US20060292844 Manufacturing method for two-step post nitridation annealing of plasma nitrided gate dielectric
12/28/2006US20060292843 Method for fabricating semiconductor device
12/28/2006US20060292842 Self-aligned gate and method
12/28/2006US20060292841 Atomic layer deposition systems and methods including metal beta-diketiminate compounds
12/28/2006US20060292840 Thermally conductive grease and methods and devices in which said grease is used
12/28/2006US20060292839 Contacts fabric using heterostructure of metal/semiconductor nanorods and fabrication method thereof
12/28/2006US20060292838 Ion implanting methods
12/28/2006US20060292837 Method and apparatus for modelling film grain patterns in the frequency domain
12/28/2006US20060292836 Manufacturing method of polysilicon
12/28/2006US20060292835 Element fabrication substrate
12/28/2006US20060292834 High performance transistors with hybrid crystal orientations
12/28/2006US20060292833 Substrate for forming semiconductor layer
12/28/2006US20060292832 Method of working nitride semiconductor crystal
12/28/2006US20060292831 Spacer Die Structure and Method for Attaching
12/28/2006US20060292830 Chip dicing
12/28/2006US20060292829 Apparatus and method of wafer dicing
12/28/2006US20060292828 Wafer and method of cutting the same
12/28/2006US20060292827 Chemical die singulation technique
12/28/2006US20060292826 Wafer processing method
12/28/2006US20060292825 Monitoring the reduction in thickness as material is removed from a wafer composite and test structure for monitoring removal of material
12/28/2006US20060292824 Methods for bonding and micro-electronic devices produced according to such methods
12/28/2006US20060292823 Method and apparatus for bonding wafers
12/28/2006US20060292822 Method for producing dislocation-free strained crystalline films
12/28/2006US20060292821 Method of etching silicon
12/28/2006US20060292820 Isolation layers for semiconductor devices including first and second sub-trenches and methods of forming the same
12/28/2006US20060292819 Semiconductor device and method for fabricating a semiconductor device
12/28/2006US20060292818 Method for Making a Semiconductor Device Having a Semiconductor-on-Insulator (SOI) Configuration and Including a Superlattice on a Thin Semiconductor Layer
12/28/2006US20060292817 Methods of processing semiconductor structures and methods of forming capacitors for semiconductor devices using the same
12/28/2006US20060292816 Semiconductor device and method for fabricating the same
12/28/2006US20060292815 MIM capacitor in a semiconductor device and method therefor
12/28/2006US20060292814 Methods of forming integrated circuitry
12/28/2006US20060292813 Electronic component and method for manufacturing the same
12/28/2006US20060292812 Integrated circuit devices including insulating support layers and related methods and structures
12/28/2006US20060292811 Method for forming a capacitor in a semiconductor and a capacitor using the same
12/28/2006US20060292810 Method of manufacturing a capacitor
12/28/2006US20060292809 Method for growth and optimization of heterojunction bipolar transistor film stacks by remote injection
12/28/2006US20060292808 Absorber layer for dsa processing
12/28/2006US20060292807 Semiconductor device and method of fabricating the same
12/28/2006US20060292806 Semiconductor integrated circuit device
12/28/2006US20060292805 Semiconductor device
12/28/2006US20060292804 Nitride semiconductor light emitting diode and fabrication method thereof
12/28/2006US20060292803 High voltage metal-oxide-semiconductor transistor devices and method of making the same
12/28/2006US20060292802 Semiconductor Device and Method for Forming the Same
12/28/2006US20060292801 Bit line of a semiconductor device and method for fabricating the same
12/28/2006US20060292800 ONO formation of semiconductor memory device and method of fabricating the same
12/28/2006US20060292799 Memory embedded semiconductor device and method for fabricating the same
12/28/2006US20060292798 Flash memory device and method for manufacturing the same
12/28/2006US20060292797 Method of fabricating floating gate of flash memory device
12/28/2006US20060292796 Flash memory device and method for manufacturing the same
12/28/2006US20060292795 Method of manufacturing a flash memory device
12/28/2006US20060292794 Method of manufacturing dielectric film of flash memory device
12/28/2006US20060292793 Semiconductor processing methods
12/28/2006US20060292792 Method for the manufacture of a non-volatile memory device and memory device thus obtained
12/28/2006US20060292791 Semiconductor integrated circuit device and method for manufacturing the same
12/28/2006US20060292790 Dual work function gate electrodes using doped polysilicon and a metal silicon germanium compound
12/28/2006US20060292789 Structure and method for collar self-aligned to buried plate
12/28/2006US20060292788 Systems and methods of forming refractory metal nitride layers using disilazanes
12/28/2006US20060292787 Semiconductor processing methods, and semiconductor constructions
12/28/2006US20060292786 Semiconductor constructions, and methods of forming semiconductor constructions
12/28/2006US20060292785 Cu-metalized compound semiconductor device
12/28/2006US20060292784 Methods of Forming Integrated Circuit Devices Including Memory Cell Gates and High Voltage Transistor Gates Using Plasma Re-Oxidation
12/28/2006US20060292783 CMOS transistor and method of manufacturing the same
12/28/2006US20060292782 Semiconductor device and method for manufacturing the same
12/28/2006US20060292781 Finfets, nonvolatile memory devices including finfets, and methods of forming the same