Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/2014
03/26/2014CN103681320A Production method of germanium-silicon heterojunction bipolar triode device
03/26/2014CN103681319A Manufacturing technology of diodes
03/26/2014CN103681318A Method for manufacturing junction barrier schottky diode through selective oxidation of silicon
03/26/2014CN103681317A Method for manufacturing P-N junction buried barrier Schottky diode
03/26/2014CN103681316A Deep-trench Schottky barrier diode and process method thereof
03/26/2014CN103681315A Method for forming buried layer
03/26/2014CN103681314A Heating processing technology for improving tiny impurity precipitation in crystal
03/26/2014CN103681313A Method for regulating bipolar junction transistor collector reverse breakdown voltages
03/26/2014CN103681312A Method for preparing nickel silicide by laser annealing
03/26/2014CN103681311A Method for forming shallow-trench isolation structure
03/26/2014CN103681310A Method for etching substrate where graphene grows
03/26/2014CN103681309A Manufacturing method for ultra-thickness metal
03/26/2014CN103681308A Preparation method for multi-type silicide mask layer
03/26/2014CN103681307A Method of forming laminated film and forming apparatus thereof
03/26/2014CN103681306A Etching method of nitrogen, oxygen and silicon of gentle and smooth sidewall morphology
03/26/2014CN103681305A Photoresist removing method for use after high-energy ion implantation
03/26/2014CN103681304A Showerhead electrode assembly in a capacitively coupled plasma processing apparatus
03/26/2014CN103681303A Trench formation method and method for manufacturing semiconductor device
03/26/2014CN103681302A Selective etching method
03/26/2014CN103681301A Dry etching process capable of improving scallop morphology of sidewall of channel
03/26/2014CN103681300A Plasma treatment device
03/26/2014CN103681299A Chemical etching device used for manufacturing ultrathin silicon single chip
03/26/2014CN103681298A Machining method for high-yield monocrystalline silicon wafer for IGBT
03/26/2014CN103681297A Wafer processing method
03/26/2014CN103681296A Inline metrology for attaining full wafer map of uniformity and surface charge
03/26/2014CN103681295A Lamination ceramic substrate breaking method and groove processing tool
03/26/2014CN103681294A Lamination ceramic substrate breaking method
03/26/2014CN103681293A Self-alignment duplex patterning method
03/26/2014CN103681292A Band expanding device
03/26/2014CN103681291A Metal silicide forming method
03/26/2014CN103681290A Formation method of silicide
03/26/2014CN103681289A Method for preparing germanium oxide interface repairing layer by using in-situ ozone oxidation
03/26/2014CN103681288A High-reliability growth technique for low-temperature gate oxide layer
03/26/2014CN103681287A Method for controlling critical size of polycrystalline silicon grid electrode
03/26/2014CN103681286A Method for manufacturing a layer arrangement, and a layer arrangement
03/26/2014CN103681285A Semiconductor device including fluorine-free tungsten barrier layer and method for fabricating the same
03/26/2014CN103681284A Method of forming low-resistance wire and method of manufacturing thin film transistor using the same
03/26/2014CN103681283A Method for fabricating a recessed channel access transistor device
03/26/2014CN103681282A Formation method of transistor
03/26/2014CN103681281A Film layer double patterning method
03/26/2014CN103681280A Semiconductor device and formation method thereof
03/26/2014CN103681279A Semiconductor device and manufacturing method thereof
03/26/2014CN103681278A PMOS source and drain formation method
03/26/2014CN103681277A Wet etching method in multilayer metal patterning process
03/26/2014CN103681276A Forming method of metal gate, forming method of MOS transistor and forming method of CMOS structure
03/26/2014CN103681275A Semiconductor device with height-controllable fin and preparation method
03/26/2014CN103681274A Semiconductor device manufacture method
03/26/2014CN103681273A Metal gate manufacturing method
03/26/2014CN103681272A Preparation method for fin field effect transistor
03/26/2014CN103681271A Semiconductor device structure and production method thereof
03/26/2014CN103681270A Metal grid forming method
03/26/2014CN103681269A Method for selectively forming high-K dielectric layer
03/26/2014CN103681268A Method for activating ions by using laser annealing process
03/26/2014CN103681267A Method of forming gettering layer
03/26/2014CN103681266A Ion implantation method for active region
03/26/2014CN103681265A Ion implantation method and ion implantation apparatus
03/26/2014CN103681264A Formation method of semiconductor device and formation method of MOS transistor
03/26/2014CN103681263A Method for reducing stray capacitance between contact plugs and gate structure
03/26/2014CN103681262A Method for preparing high charge balance super-junction device
03/26/2014CN103681261A Method for preparing buffer layer or current carrier storage layer of power device
03/26/2014CN103681260A Liquid phase epitaxy preparation method of multilayer embedded structure GaSb quantum dot materials
03/26/2014CN103681259A Method for manufacturing silicon carbide semiconductor device
03/26/2014CN103681258A Source and drain double epitaxial layer formation method
03/26/2014CN103681257A Manufacturing method for semiconductor device
03/26/2014CN103681256A A novel silicon carbide MOSFET device and a manufacturing method thereof
03/26/2014CN103681255A Double patterning process
03/26/2014CN103681254A Method for improving fineness of edges of photoresistor
03/26/2014CN103681253A Hardmask
03/26/2014CN103681252A Method of semiconductor integrated circuit fabrication
03/26/2014CN103681251A Hybrid optical and electron beam lithography method
03/26/2014CN103681250A Method for controlling CD (Critical Dimension) of double etching formed graphs
03/26/2014CN103681249A Manufacture method for fine pattern on semiconductor device
03/26/2014CN103681248A Production method for semiconductor device
03/26/2014CN103681247A Wafer reaction chamber cleaning device
03/26/2014CN103681246A SiC (Silicon Carbide) material cleaning method
03/26/2014CN103681245A Method for cleaning germanium sheet and passivating surface of germanium sheet
03/26/2014CN103681244A Low-temperature polycrystalline silicon film pre-cleaning method, low-temperature polycrystalline silicon film preparation method and low-temperature polycrystalline silicon film manufacturing system
03/26/2014CN103681243A Method for improving surface damage of SOI (Silicon-On-Insulator) substrate
03/26/2014CN103681242A Silicon substrate thick metal etching pretreatment process
03/26/2014CN103681241A Cleaning method capable of improving quality of oxide layer
03/26/2014CN103681240A Epitaxial temperature testing and monitoring structure and forming method
03/26/2014CN103681239A Method for cleaning surface of monocrystalline silicon wafer
03/26/2014CN103681238A Semiconductor device and method of fabricating semiconductor device
03/26/2014CN103681237A Substrate treating method
03/26/2014CN103681236A Substrate treating method
03/26/2014CN103681235A Solution method for effectively filling deep trench
03/26/2014CN103681234A Method for forming self-alignment duplex pattern
03/26/2014CN103681233A Manufacturing method for multi-groove structure
03/26/2014CN103681232A Production method for semiconductor device
03/26/2014CN103681231A Method for forming pattern in substrate
03/26/2014CN103681230A Safe and precise cutting method for lower metal arranged wire
03/26/2014CN103681229A Adhesive tape joining method and adhesive tape joining apparatus
03/26/2014CN103681228A Adhesive tape joining method and adhesive tape joining apparatus
03/26/2014CN103681196A Plasma processing apparatus and plasma processing method
03/26/2014CN103681192A Plasma etching method and silicon shallow trench isolation method
03/26/2014CN103681185A Electrostatic chuck and plasma treatment device
03/26/2014CN103680611A 3D (three-dimensional) NAND memory and manufacturing method thereof
03/26/2014CN103677832A Method and system for drawing wafer copper film thickness view
03/26/2014CN103676501A Method for treating substrate
03/26/2014CN103676497A On-product focus offset metrology method and structure for use in semiconductor chip manufacturing
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