| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 05/31/2007 | US20070120229 Wet etched insulator and electronic circuit component |
| 05/31/2007 | US20070120228 Semiconductor wafer and manufacturing method therefor |
| 05/31/2007 | US20070120222 Method for manufacturing semiconductor silicon substrate and apparatus for manufacturing the same |
| 05/31/2007 | US20070120221 Electronically Programmable Antifuse and Circuits Made Therewith |
| 05/31/2007 | US20070120216 Low cost bonding pad and method of fabricating same |
| 05/31/2007 | US20070120213 Wire under dam package and method for packaging image-sensor |
| 05/31/2007 | US20070120206 Semiconductor optical device having current-confined structure |
| 05/31/2007 | US20070120204 Semiconductor device and manufacturing method thereof |
| 05/31/2007 | US20070120202 Semiconductor Integrated Circuit Device and Method of Testing the Same |
| 05/31/2007 | US20070120197 Method and structure for enhancing both nmosfet and pmosfet performance wth a stressed film |
| 05/31/2007 | US20070120194 Semiconductor device and a method of manufacturing the same |
| 05/31/2007 | US20070120189 Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
| 05/31/2007 | US20070120184 Enhanced resurf hvpmos device with stacked hetero-doping rim and gradual drift region |
| 05/31/2007 | US20070120183 Integrated circuit devices having active regions with expanded effective widths |
| 05/31/2007 | US20070120179 SONOS type non-volatile memory devices having a laminate blocking insulation layer and methods of manufacturing the same |
| 05/31/2007 | US20070120167 Large-area nanoenabled macroelectronic substrates and uses therefor |
| 05/31/2007 | US20070120162 Method and apparatus for blocking light to peripheral circuitry of an imager device |
| 05/31/2007 | US20070120159 CMOS image sensor having duble gate insulator therein and method for manufacturing the same |
| 05/31/2007 | US20070120155 Colors only process to reduce package yield loss |
| 05/31/2007 | US20070120144 Semiconductor device having group III nitride buffer layer and growth layers |
| 05/31/2007 | US20070120142 Nitride semiconductor light-emitting device and method for manufacturing the same |
| 05/31/2007 | US20070120127 Semiconductor device and semiconductor device production system |
| 05/31/2007 | US20070120125 Semiconductor Integrated Circuit Device and Method of Testing the Same |
| 05/31/2007 | US20070120103 Switch circuit and method of switching radio frequency signals |
| 05/31/2007 | US20070120090 System for the Preferential Removal of Silicon Oxide |
| 05/31/2007 | US20070120078 Method of measuring pattern dimension and method of controlling semiconductor device process |
| 05/31/2007 | US20070119905 Component mounting tool, and method and apparatus for mounting component using this tool |
| 05/31/2007 | US20070119893 Substrate cutting device and method |
| 05/31/2007 | US20070119817 Manufacturing method of silicon wafer |
| 05/31/2007 | US20070119816 Systems and methods for reclaiming process fluids in a processing environment |
| 05/31/2007 | US20070119815 Process for laser processing and apparatus for use in the same |
| 05/31/2007 | US20070119814 Apparatus and method for detecting an endpoint in a vapor phase etch |
| 05/31/2007 | US20070119813 Gate patterning method for semiconductor processing |
| 05/31/2007 | US20070119811 Masking material for dry etching |
| 05/31/2007 | US20070119617 Method for manufacturing component built-in module, and component built-in module |
| 05/31/2007 | US20070119545 Method to improve profile control and n/p loading in dual doped gate applications |
| 05/31/2007 | US20070119544 Apparatus and method for single substrate processing using megasonic-assisted drying |
| 05/31/2007 | US20070119486 System for rinsing and drying semiconductor substrates |
| 05/31/2007 | US20070119377 Barrier coating for vitreous materials |
| 05/31/2007 | US20070119376 Matching device and plasma processing apparatus |
| 05/31/2007 | US20070119369 Method for producing reactive intermediates for transport polymerization |
| 05/31/2007 | US20070119367 Method for producing silicon epitaxial wafer and silicon epitaxial wafer |
| 05/31/2007 | US20070119252 Tri-axis accelerometer |
| 05/31/2007 | US20070119131 Chemical filter arrangement for asemiconductor manufacturing apparatus |
| 05/31/2007 | US20070119051 Inductive Heating of Microelectronic Components |
| 05/31/2007 | DE202007003416U1 Automatisierungscarrier für Substrate, insbesondere für Wafer zur Herstellung siliziumbasierter Solarzellen Automation Carrier for substrates, particularly for silicon wafers for solar cells based |
| 05/31/2007 | DE19521469B4 Hochspannungstransistorstruktur für eine Halbleitervorrichtung sowie Verfahren zu deren Herstellung High-voltage transistor structure for a semiconductor device as well as processes for their preparation |
| 05/31/2007 | DE19503985B4 Verfahren zur Bildung eines Fotolackmusters für eine Halbleitervorrichtung A method of forming a resist pattern for a semiconductor device |
| 05/31/2007 | DE112005001865T5 Nitridverbindungshalbleiter und Verfahren zur Herstellung desselben Nitride compound semiconductor, and method of manufacturing the same |
| 05/31/2007 | DE112005001447T5 Doppelseitenpolierträger und Herstellungsverfahren desselben The same double-side polishing carriers and methods of manufacture |
| 05/31/2007 | DE10341059B4 Integrierte Schaltungsanordnung mit Kondensator und Herstellungsverfahren Integrated circuit arrangement having a capacitor and manufacturing method |
| 05/31/2007 | DE10215284B4 Verfahren und Vorrichtung zum Trocknen von Substraten Method and device for drying substrates |
| 05/31/2007 | DE102006055376A1 Production of silicon semiconductor crystals by floating zone process with seeding, core zone growth and main zone growth, involves changing pressure in growth chamber during process |
| 05/31/2007 | DE102006055334A1 Feldeffekttransistor und Verfahren zu dessen Herstellung Field effect transistor and method of producing the |
| 05/31/2007 | DE102006053958A1 Verbindungsverfahren für ein Halbleitersubstrat und eine Schicht, sowie Herstellungsverfahren von Halbleiterchips unter Verwendung hiervon Bonding method for a semiconductor substrate and a layer, and production method of semiconductor chips using thereof |
| 05/31/2007 | DE102006053927A1 Semiconductor component and production process has source-drain region with gate electrode and intermetallic dielectric layer of damascene structure with barrier and metallic cover layers |
| 05/31/2007 | DE102006053898A1 Laser processing device and method uses multi-wavelength laser beam focused at different depths in wafer for simultaneous division and wafer dicing |
| 05/31/2007 | DE102006053895A1 Wafer und Waferschneid- und Teilungsverfahren Wafer and Waferschneid- and dividing method |
| 05/31/2007 | DE102006052694A1 Waferprodukt und Herstellungsverfahren dafür Wafer product and manufacturing method thereof |
| 05/31/2007 | DE102006051285A1 MOS-Transistor mit einem Driftbereich und Verfahren zur Herstellung desselben Of the same MOS transistor having a drift region and methods for preparing |
| 05/31/2007 | DE102006050901A1 Production of semiconductor body, e.g. for photovoltaic cell, by directionally recrystallizing portion of source melt to form intermediate crystal, disposing of residue portion, melting portion of intermediate crystal, and crystallizing |
| 05/31/2007 | DE102006045914A1 Halbleitervorrichtung, Verfahren zu deren Fertigung und Verfahren zu deren Bewertung A semiconductor device, process for their production and methods for their review |
| 05/31/2007 | DE102006030707A1 Production of capacitor in semiconductor component comprises forming base electrode on semiconductor substrate, forming dielectric layer on base electrode and forming upper electrode on dielectric layer |
| 05/31/2007 | DE102005057407A1 Treating material in production of semiconductor components comprises implanting partial region of material with ions and etching material using etching rate which is changed by implanted ions |
| 05/31/2007 | DE102005057401A1 Semiconductor component and production process for power uses has semiconductor element with chip island having two contact strips in separate planes above the semiconductor element |
| 05/31/2007 | DE102005057109A1 Continuous wet chemical processing, e.g. cleaning, etching, stripping, coating or drying of flat, thin, fragile substrates comprises transporting and processing substrates using absorbent rollers |
| 05/31/2007 | DE102005057076A1 Increasing adhesion of metal layers comprises determination of regions of reduced contact hole density and formation of position-holding contacts with metal |
| 05/31/2007 | DE102005057075A1 Semiconductor component has copper alloy employed as barrier layer within copper metalizing layer |
| 05/31/2007 | DE102005057074A1 Method of reducing crystal defects in deformed transistors under gate electrode uses an inclined implantation to form an amorphous region by and beneath the gate |
| 05/31/2007 | DE102005057073A1 Forming semiconductor component comprises forming metal silicide on two transistors while other is masked and then forming contact layers of given internal tension |
| 05/31/2007 | DE102005057057A1 Production of insulated covering layer forming efficient diffusion barrier for e.g. copper metallization layer of integrated circuits, employs thermo-chemical cleaning and silane-based surface pretreatment |
| 05/31/2007 | DE102005056930A1 Halbleiter-Bauelement-Test-Verfahren, Halbleiter-Bauelement-Testgerät, sowie zwischen ein Testgerät und ein zu testendes Halbleiter-Bauelement geschaltete Einrichtung A semiconductor device testing method, semiconductor device tester as well as connected between a test apparatus and a semiconductor device to be tested device |
| 05/31/2007 | DE102005056262A1 Production of layer arrangement, such arrangement and electronic component, comprises covers carbon layer with protective layer of carbide before applying electrically isolating layer |
| 05/31/2007 | DE102005055838A1 Production of a contact site in a surface region of a semiconductor structure in the production of power transistors comprises forming a recess in a surface region up to a prescribed recess depth, implanting a dopant and further processing |
| 05/31/2007 | DE102005055402A1 Producing wiring structure on wafer substrate for center row arrangement or wafer level packaging comprises sputtering of seed layer to form trench and application of copper layer |
| 05/31/2007 | DE102005055302A1 Multi-bit memory element and production process has U-shaped trench structure with conductive region and insulating region containing at least two floating gates |
| 05/31/2007 | DE102005047102B3 Halbleiterbauelement mit pn-Übergang Semiconductor component with pn junction |
| 05/31/2007 | DE102005041108B3 Verfahren zur Herstellung eines Trench-Transistors und Trench-Transistor Process for the preparation of a trench transistor and trench transistor |
| 05/31/2007 | DE102005039666B3 Verfahren zum Herstellen einer Halbleiterstruktur mit selektiven Dotierstoffbereichen A method of manufacturing a semiconductor structure with selective impurity regions |
| 05/31/2007 | DE102005037869B4 Anordnung zur hermetischen Abdichtung von Bauelementen und Verfahren zu deren Herstellung Assembly for hermetic sealing of components and processes for their preparation |
| 05/31/2007 | DE102005037573B4 Thyristor mit Freiwerdeschutz in Form eines Thyristorsystems und Verfahren zur Herstellung des Thyristorsystems Thyristor with free Become protection in the form of a Thyristorsystems and method for producing the Thyristorsystems |
| 05/31/2007 | DE102004030860B4 Verfahren zum Schützen eines Metallisierungsgebiets in einer Halbleiterstrukturmit mindestens einem Metallisierungsgebiet A method of protecting a Metallisierungsgebiets in a Halbleiterstrukturmit least one Metallisierungsgebiet |
| 05/31/2007 | CA2631142A1 Ball grid attachment |
| 05/31/2007 | CA2630885A1 Apparatus and method for wet-chemical processing of flat, thin substrates in a continuous method |
| 05/31/2007 | CA2630807A1 Device and method for holding a substrate |
| 05/30/2007 | EP1791410A2 Multilayer printed circuit board |
| 05/30/2007 | EP1791181A1 Transistor structure with high input impedance and high current capability and manufacturing process thereof |
| 05/30/2007 | EP1791176A1 Insulation substrate, power module substrate, manufacturing method thereof, and power module using the same |
| 05/30/2007 | EP1791175A2 Method of manufacturing bonded wafer |
| 05/30/2007 | EP1791174A2 A process for regenerating layer transferred wafer and layer transferred wafer regenerated by the process |
| 05/30/2007 | EP1791173A1 Process for manufacturing a MOSFET and corresponding MOSFET |
| 05/30/2007 | EP1791171A1 Epitaxial crystal growing method |
| 05/30/2007 | EP1791170A2 Method of manufacturing a substrate, in particular for optics, electronics or optoelectronics, and substrate obtained through said method |
| 05/30/2007 | EP1791169A1 Aligning method, processing system, substrate loading repeatability measuring method, position measuring method, exposure method, substrate processing apparatus, measuring method and measuring apparatus |
| 05/30/2007 | EP1791168A1 Reflective mask blank for euv lithography and method for producing same |
| 05/30/2007 | EP1791167A1 Substrate processing apparatus, use state ascertaining method, and false use preventing method |
| 05/30/2007 | EP1791166A1 Method for measuring heating plate temperature, substrate processing equipment, and computer program for measuring heating plate temperature |
| 05/30/2007 | EP1791165A1 Stage device and exposure system |
| 05/30/2007 | EP1791164A1 Exposure equipment, exposure method and device manufacturing method |
| 05/30/2007 | EP1791163A2 Method and apparatus for attaching a peeling tape |