Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/2008
03/20/2008US20080067218 Method and Computer Program for the Self-Assembly of a Nanostructure
03/20/2008US20080067147 Processing apparatus and processing method
03/20/2008US20080067064 Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
03/20/2008US20080066865 Device and process for liquid treatment of wafer-shaped articles
03/20/2008US20080066864 Etch apparatus
03/20/2008US20080066863 Substrate processing apparatus for performing etching process with phosphoric acid solution
03/20/2008US20080066862 Substrate holding apparatus and substrate polishing apparatus
03/20/2008US20080066859 Plasma processing apparatus capable of adjusting pressure within processing chamber
03/20/2008US20080066785 Method of refurbishing a magnet assembly for plasma process chamber
03/20/2008US20080066779 Removing the palladium metal layer using a cerium (IV) nitrate salt
03/20/2008US20080066681 Batch-Type Remote Plasma Processing Apparatus
03/20/2008US20080066680 Sequential chemical vapor deposition
03/20/2008US20080066647 Al2O3 film formed on the undercoat as a middle layer and high purity Y2O3 plasma sprayed coating as a top coat; chemical resistance, corrosion resistance
03/20/2008US20080066497 Holder Made From Quartz Glass for the Processing of Semiconductor Wafers and Method for Production of the Holder
03/20/2008US20080066302 Manufacturing method of package substrate
03/20/2008DE112006001152T5 Halbleitervorrichtung mit Elementabschnitt und Verfahren zur Fertigung der Vorrichtung A semiconductor device having element portion and method of manufacturing the device
03/20/2008DE112006000647T5 Verfahren zum Bilden selbst-passivierender Interconnects und resultierender Vorrichtungen A method of forming self-passivating interconnects and resulting devices
03/20/2008DE112006000308T5 Verfahren zur Verringerung kritischer Abmessungen unter Verwendung mehrerer Maskenschritte A method for reducing critical dimensions using multiple mask steps
03/20/2008DE112004002137T5 Transistor mit bipolarem Übergang mit verbesserter extrinsischer Basisregion und Herstellungsverfahren Bipolar transistor junction with improved extrinsic base region and manufacturing processes
03/20/2008DE112004001131T5 Preßmassenaufsatz in einem Flip-Chip Multi-Matrix Anordnungspaket und Verfahren zu dessen Herstellung Preßmassenaufsatz in a flip-chip multi-array package and process for its preparation
03/20/2008DE10326087B4 Bauelement mit einer Nutzstruktur und einer Hilfsstruktur Component with a useful structure and an auxiliary structure
03/20/2008DE10322742B4 Halbleitervorrichtung Semiconductor device
03/20/2008DE10291037B4 Verfahren zur Herstellung von Tantal- und Niobalkoholaten A process for producing tantalum and Niobalkoholaten
03/20/2008DE10214159B4 Verfahren zur Herstellung einer Referenzschicht für MRAM-Speicherzellen A process for preparing a reference layer for MRAM memory cells
03/20/2008DE102007038152A1 Vertikaler Bipolartransistor, Verfahren zu seiner Herstellung A vertical bipolar transistor, process for its preparation
03/20/2008DE102007037445A1 Isolierfilm, Herstellungsverfahren für mehrschichtige Verdrahtungsvorrichtung und mehrschichtige Verdrahtungsvorrichtung Insulating film manufacturing process for multilayer wiring device and multi-layer wiring device
03/20/2008DE102007035898A1 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
03/20/2008DE102007035767A1 Material comprising an organosiloxane polymer with alkali-soluble groups in a solvent, used for making a cover film to protect the resist film during production of electronic devices by the immersion exposure technique
03/20/2008DE102007028798A1 Leistungshalbleitervorrichtung Power semiconductor device
03/20/2008DE102007024113A1 Halbleitervorrichtung mit isoliertem Gate und Verfahren zur Herstellung derselben A semiconductor device comprising insulated gate and method of manufacturing the same
03/20/2008DE102006048596A1 Verfahren zum Ausbilden eines Halbleiterbauelements A method of forming a semiconductor device
03/20/2008DE102006042329A1 Verfahren zum selektiven plasmachemischen Trockenätzen von auf Oberflächen von Silicium-Wafern ausgebildetem Phosphorsilikatglas A method for selectively plasma-chemical dry etching of trained on surfaces of silicon wafers phosphosilicate glass
03/20/2008DE102006042327A1 Vorrichtung und Verfahren zur Ausbildung dünner Siliciumnitridschichten auf Oberflächen von kristallinen Silicium-Solarwafern Apparatus and method for forming thin silicon nitride films on surfaces of crystalline silicon solar wafers
03/20/2008DE102006041424A1 Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten und dessen Verwendung A process for the simultaneous doping and oxidation of semiconductor substrates and the use thereof
03/20/2008DE102006040764A1 Tranistor mit einem lokal vorgesehenem Metallsilizidgebiet in Kontaktbereichen und Herstellung des Transistors Tranistor with a locally the intended metal silicide contact areas and fabrication of the transistor
03/20/2008DE102006040585A1 Verfahren zum Auffüllen eines Grabens in einem Halbleiterprodukt A method for filling a trench in a semiconductor product
03/20/2008DE102006040491A1 Implantation zone i.e. field stop zone, forming method for e.g. punch trough insulated gate bipolar transistor, involves expanding undisturbed zone opposite to formed zone in same penetration depth with less radiation energy and path length
03/20/2008DE102006040115A1 Verfahren und Anordnung zur hermetisch dichten vertikalen elektrischen Durchkontaktierung von Deckscheiben der Mikrosystemtechnik Method and apparatus for hermetically sealed vertical electric throughplating shields of microsystem technology
03/20/2008DE102006039881A1 Aminofunktionelles Haftvermittlersystem für Edelmetalloberflächen Amino-functional coupling agent system for noble metal surfaces
03/20/2008DE102006039503A1 Semiconductor arrangement e.g. non volatile ROM, cell, has conductors isolated by material and provided with connection, where other conductors do not pass through former conductors in connection
03/20/2008DE102006039302A1 Bipolar complementary MOS circuit producing method, involves implanting structures for complementary MOS transistors, where implantation of structures includes increase of dopant concentration by implantation in collector
03/20/2008DE102006038874A1 Semiconductor device, has trench with side wall-isolation extending from main surface deeply into semiconductor substrate and comprising conductive material extending from main surface to substrate layer
03/20/2008DE102006037633A1 Halbleiterchip mit Beschädigungs-Detektierschaltung und ein Verfahren zum Herstellen eines Halbleiterchips Semiconductor chip having DAMAGE detecting circuit and a method for producing a semiconductor chip
03/20/2008DE102006035669A1 Transistor mit einem verformten Kanalgebiet, das eine leistungssteigernde Materialzusammensetzung aufweist Transistor with a strained channel region having a performance-enhancing material composition
03/20/2008DE102004048745B4 Verfahren zum Ausbilden einer Bitleitungsstruktur A method of forming a bit line
03/20/2008DE102004046428B4 Hochvolumenverfahren zur Prozessierung einer molekularen selbstorganisierten Monolage als Gate-Dielektrikum bei der Herstellung organischer Feldeffekt-Transistoren A method for processing a high volume of molecular self-assembled monolayer as the gate dielectric in the production of organic field-effect transistors
03/20/2008DE102004022178B4 Verfahren zur Herstellung einer Leiterbahn auf einem Substrat und Bauelement mit einer derart hergestellten Leiterbahn A method of fabricating a wiring on a substrate and the component to a conductor track manufactured in such a way
03/20/2008DE102004009601B4 Verfahren zur Herstellung eines Feldeffekttransistors A process for producing a field effect transistor
03/20/2008DE102004004880B4 Verbindungsverfahren für direkt verbundene gestapelte integrierte Schaltungen sowie integrierter Schaltungschip und integriertes Schaltungsgehäuse Connection method to directly connected stacked integrated circuits and integrated circuit chip and integrated circuit package
03/20/2008DE102004002242B4 Verfahren zum Herstellen einer Halbleiterstruktur mit Kornelementen für einen Kondensator einer Speicherzelle A method of manufacturing a semiconductor structure with grain elements for a capacitor of a memory cell
03/20/2008CA2630824A1 Semiconductor device
03/19/2008EP1901358A1 Method of fabricating light emitting device
03/19/2008EP1901356A1 Testing circuit, wafer, measuring apparatus, device manufacturing method and display device
03/19/2008EP1901347A2 Method for crystallizing semiconductor film and semiconductor film crystallized by the method
03/19/2008EP1901346A2 Semiconductor EEPROM device and method of manufacturing the same
03/19/2008EP1901345A1 Multilayered semiconductor wafer and process for manufacturing the same
03/19/2008EP1901344A1 Gold alloy wire for use as bonding wire exhibiting high initial bonding capability, high bonding reliability, high circularity of press bonded ball, high straight advancing property and high resin flow resistance
03/19/2008EP1901343A1 Gold alloy wire for use as bonding wire exhibiting high bonding reliability, high circularity of press bonded ball, high straight advancing property and high resin flow resistance
03/19/2008EP1901342A1 Field effect transistor
03/19/2008EP1901341A1 Field effect transistor
03/19/2008EP1901340A1 Method of producing bonded wafer
03/19/2008EP1901339A1 Exposure apparatus, exposure method, device manufacturing method, and system
03/19/2008EP1901338A1 Exposure apparatus and method, exposure apparatus maintenance method, and device manufacturing method
03/19/2008EP1901337A1 Exposure method and lithography system
03/19/2008EP1901336A1 Exposure apparatus
03/19/2008EP1901335A1 Heating device of the light irradiation type
03/19/2008EP1901111A2 Method and apparatus for making flexible displays
03/19/2008EP1901080A1 Semiconductor failure analyzing apparatus, semiconductor failure analyzing method, semiconductor failure analyzing program and semiconductor failure analyzing system
03/19/2008EP1901079A1 Semiconductor defect analyzing device, defect analyzing method, and defect analyzing program
03/19/2008EP1900857A1 Method of manufacturing single crystalline gallium nitride thick film
03/19/2008EP1900801A1 Substrate water-removing agent, and water-removing method and drying method employing same
03/19/2008EP1900696A1 Crystallized glass, and method for producing crystallized glass
03/19/2008EP1900041A1 Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device
03/19/2008EP1900035A2 Semiconductor device and method of manufacturing such a device
03/19/2008EP1900034A2 Semiconductor device and method of manufacturing such a device
03/19/2008EP1900033A2 Memory using hole trapping in high-k dielectrics
03/19/2008EP1900023A2 Package, subassembly and methods of manufacturing thereof
03/19/2008EP1900021A1 Semiconductor device including shallow trench isolation (sti) regions with a superlattice therebetween and associated methods
03/19/2008EP1900020A1 Method for assembling substrates by depositing an oxide or nitride thin bonding layer
03/19/2008EP1900019A2 Method for making electronic devices
03/19/2008EP1900018A2 Method of manufacturing an assembly and assembly
03/19/2008EP1900017A1 Multiple mask process with etch mask stack
03/19/2008EP1900016A2 Inorganic semiconductive films and methods therefor
03/19/2008EP1900015A2 Doping profile improvement of in-situ doped n-type emitters
03/19/2008EP1900014A2 Substrate, in particular made of silicon carbide, coated with a thin stoichiometric film of silicon nitride, for making electronic components, and method for obtaining such a film
03/19/2008EP1900013A2 Technique for the growth and fabrication of semipolar (ga,al,in,b)n thin films, heterostructures, and devices
03/19/2008EP1900012A1 Highly oxygen-sensitive silicon layer and method for obtaining same
03/19/2008EP1900011A1 Fabrication of aligned nanowire lattices
03/19/2008EP1900008A1 White light tandem oled display with filters
03/19/2008EP1900007A1 Organic double-heterostructure photovoltaic cells having reciprocal-carrier exciton blocking layer
03/19/2008EP1900006A1 Method and device for cleaning electronic components processed with a laser beam
03/19/2008EP1900005A1 Apparatus and process for treating dielectric materials
03/19/2008EP1899784A2 Exhaust apparatus pressure control system
03/19/2008EP1899509A1 Apparatus and method for maintaining a near-atmospheric pressure inside a process chamber
03/19/2008EP1899111A2 Integrated chemical mechanical polishing composition and process for single platen processing
03/19/2008EP1899084A1 Method and device for cleaning or drying pot-like hollow bodies, particularly transport containers for semiconductor wafers
03/19/2008EP1790002B1 Method of manufacturing a semiconductor device
03/19/2008EP1647070B1 An antenna
03/19/2008EP1573366A4 Continuous direct-write optical lithography
03/19/2008EP1552032A4 Copper sputtering targets and methods of forming copper sputtering targets