Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2008
10/01/2008CN100422807C Array substrate for liquid crystal display device and method of fabricating the same
10/01/2008CN100422798C Display device and method for manufacturing the same
10/01/2008CN100422755C Chip socket burnt-in seat
10/01/2008CN100422747C Probe guard
10/01/2008CN100422389C Apparatus and method for plating a substrate, and method and apparatus for electrolytic treatment
10/01/2008CN100422383C Systems and methods for forming metal oxides using alcohols
10/01/2008CN100422380C Equipment and method for vacuum evaporation plating and organic fluorescent device
10/01/2008CN100422241C Siloxane-based resin and interlayer insulating film for a semiconductor device made using the same
10/01/2008CN100422240C Organosilicate polyer and insulating film therefrom
10/01/2008CN100421861C Soldering flux
10/01/2008CN100421818C Dispensation of controlled quantities of material onto a substrate
10/01/2008CN100421807C Single-admission and double-area adjustable nozzle
10/01/2008CN100421778C Process for the recovery of surfactants
09/2008
09/30/2008US7430731 Method for electrochemically fabricating three-dimensional structures including pseudo-rasterization of data
09/30/2008US7430693 Data memory system
09/30/2008US7430104 Electrostatic chuck for wafer metrology and inspection equipment
09/30/2008US7430103 Static electricity protective circuit and high-frequency circuit apparatus incorporating the same
09/30/2008US7430037 Reticle cassette and exposure apparatus using reticle cassette
09/30/2008US7430024 Active matrix substrate and display device
09/30/2008US7429887 Semiconductor integrated circuit apparatus
09/30/2008US7429800 Molding composition and method, and molded article
09/30/2008US7429791 Semiconductor device in a resin sealed package with a radiating plate and manufacturing method thereof
09/30/2008US7429789 Fluoropolymer dielectric composition for use in circuitized substrates and circuitized substrate including same
09/30/2008US7429787 Semiconductor assembly including chip scale package and second substrate with exposed surfaces on upper and lower sides
09/30/2008US7429781 Memory package
09/30/2008US7429778 Methods for forming wiring and electrode
09/30/2008US7429771 Semiconductor device having halo implanting regions
09/30/2008US7429770 Semiconductor device and manufacturing method thereof
09/30/2008US7429769 Recessed channel field effect transistor (FET) device
09/30/2008US7429768 Semiconductor device having a trench surrounding each of plural unit cells
09/30/2008US7429767 High performance multi-level non-volatile memory device
09/30/2008US7429765 Nonvolatile semiconductor memory
09/30/2008US7429763 Memory with strained semiconductor by wafer bonding with misorientation
09/30/2008US7429762 Semiconductor device and method of fabricating the same
09/30/2008US7429761 High power diode utilizing secondary emission
09/30/2008US7429760 Variable mask device for crystallizing silicon layer
09/30/2008US7429752 Method and structure for forming strained SI for CMOS devices
09/30/2008US7429751 Method of manufacturing a semiconductor device
09/30/2008US7429750 Solid-state element and solid-state element device
09/30/2008US7429749 Strained-silicon for CMOS device using amorphous silicon deposition or silicon epitaxial growth
09/30/2008US7429637 Oxide film precursor for forming a silicon oxide film comprising a perhydro-polysilazan
09/30/2008US7429546 Forming porous glass body on target quartz glass particles obtained by flame hydrolysis of glass-forming materials; holding in fluorine-containing atmosphere; heating, vitrification, annealilng
09/30/2008US7429543 Method for the production of a substrate
09/30/2008US7429542 UV treatment for low-k dielectric layer in damascene structure
09/30/2008US7429541 Method of forming trench isolation in the fabrication of integrated circuitry
09/30/2008US7429540 Silicon oxynitride gate dielectric formation using multiple annealing steps
09/30/2008US7429539 Nitriding method of gate oxide film
09/30/2008US7429538 Manufacturing method for two-step post nitridation annealing of plasma nitrided gate dielectric
09/30/2008US7429537 Methods and apparatus for rinsing and drying
09/30/2008US7429536 Methods for forming arrays of small, closely spaced features
09/30/2008US7429535 Use of a plasma source to form a layer during the formation of a semiconductor device
09/30/2008US7429534 Selectively etching a nitride-based cap layer that includes Al, which is directly on a nitride-based etch stop layer that includes indium, both of which are on a partial nitride-based heterostructure; and selectively etching etch stop layer using a different etching process; transistors, diodes, lasers
09/30/2008US7429533 Pitch reduction
09/30/2008US7429532 Semiconductor substrate process using an optically writable carbon-containing mask
09/30/2008US7429530 Method of forming a pattern, method of forming wiring, semiconductor device, TFT device, electro-optic device, and electronic instrument
09/30/2008US7429529 Methods of forming through-wafer interconnects and structures resulting therefrom
09/30/2008US7429528 Method of fabricating a pad over active circuit I.C. with meshed support structure
09/30/2008US7429527 Method of manufacturing self-aligned contact openings
09/30/2008US7429526 Method of forming silicide gate with interlayer
09/30/2008US7429525 Fabrication process of a semiconductor device
09/30/2008US7429524 Transistor design self-aligned to contact
09/30/2008US7429522 Dicing die-bonding film
09/30/2008US7429521 Capillary underfill of stacked wafers
09/30/2008US7429520 Methods for forming trench isolation
09/30/2008US7429519 Method of forming isolation layer of semiconductor device
09/30/2008US7429518 Method for forming shallow trench isolation of semiconductor device
09/30/2008US7429517 CMOS transistor using high stress liner layer
09/30/2008US7429516 Tungsten nitride atomic layer deposition processes
09/30/2008US7429515 Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
09/30/2008US7429514 Use of selective oxidation to form asymmetrical oxide features during the manufacture of a semiconductor device
09/30/2008US7429513 Method of manufacturing a semiconductor device
09/30/2008US7429512 Method for fabricating flash memory device
09/30/2008US7429511 Method of forming a tunneling insulating layer in nonvolatile memory device
09/30/2008US7429510 Method of making a capacitive substrate using photoimageable dielectric for use as part of a larger circuitized substrate, method of making said circuitized substrate and method of making an information handling system including said circuitized substrate
09/30/2008US7429509 Method for forming a semiconductor device
09/30/2008US7429508 Semiconductor memory device and method of manufacturing the same
09/30/2008US7429507 Semiconductor device having both memory and logic circuit and its manufacture
09/30/2008US7429505 Method of fabricating fin field effect transistor using isotropic etching technique
09/30/2008US7429504 Heterogeneous group IV semiconductor substrates, integrated circuits formed on such substrates, and related methods
09/30/2008US7429503 Method of manufacturing well pick-up structure of non-volatile memory
09/30/2008US7429502 Integrated circuit device incorporating metallurgical bond to enhance thermal conduction to a heat sink
09/30/2008US7429501 Lid and method of employing a lid on an integrated circuit
09/30/2008US7429500 Method of manufacturing a semiconductor device
09/30/2008US7429499 Method of fabricating wafer level package
09/30/2008US7429498 Integrated circuitry and method for manufacturing the same
09/30/2008US7429497 Hybrid package with non-insertable and insertable conductive features, complementary receptacle, and methods of fabrication therefor
09/30/2008US7429496 Buried photodiode for image sensor with shallow trench isolation technology
09/30/2008US7429495 System and method of fabricating micro cavities
09/30/2008US7429494 Microelectronic imagers with optical devices having integral reference features and methods for manufacturing such microelectronic imagers
09/30/2008US7429493 Method for fabricating a magnetic head for perpendicular recording using a CMP lift-off and resistant layer
09/30/2008US7429446 Resist pattern forming method and semiconductor device fabrication method
09/30/2008US7429406 Method of forming thin ruthenium-containing layer
09/30/2008US7429402 Depositing a barrier layer on the substrate, such as a titanium or tantalum containing barrier layer and depositing a ruthenium layer on the barrier layer; depositing a tungsten nucleation layer on the ruthenium layer and depositing a tungsten bulk layer on the tungsten nucleation layer
09/30/2008US7429369 Applying electrical potential between a semiconductive substrate in a dispersion of silicon nanoparticles and the thick electrode to form a thin film of silicon nanoparticles on the substrate, drying the thin film to induce it to roll into a silicon nanoparticle nanotube
09/30/2008US7429361 Method and apparatus for providing precursor gas to a processing chamber
09/30/2008US7429338 chemical mechanical polishing a semiconductor with an abrasive having a MIXTURE on the surface, CONTAINING STABILIZER, CATALYST, OXIDIZER
09/30/2008US7429306 Plasma processing system
09/30/2008US7429300 Successive vapour deposition system, vapour deposition system, and vapour deposition process
09/30/2008US7429207 System for endpoint detection with polishing pad
09/30/2008US7428907 Substrate processing apparatus
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