Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
09/2008
09/25/2008US20080233762 Method of manufacturing semiconductor device
09/25/2008US20080233761 Fabrication method of semiconductor integrated circuit device
09/25/2008US20080233760 Process for the Treatment of Substrate Surfaces
09/25/2008US20080233759 High selectivity bpsg to teos etchant
09/25/2008US20080233758 Method for forming trench and method for fabricating semiconductor device using the same
09/25/2008US20080233757 Plasma processing method
09/25/2008US20080233756 Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
09/25/2008US20080233755 Method of Removing Metallic, Inorganic and Organic Contaminants from Chip Passivation Layer Surfaces
09/25/2008US20080233754 Substrate peripheral film-removing apparatus and substrate peripheral film-removing method
09/25/2008US20080233753 Method of manufacturing a semiconductor device and a semiconductor manufacturing equipment
09/25/2008US20080233752 Method for manufacturing floating structure of microelectromechanical system
09/25/2008US20080233751 Ashing a wafer, etching the Al layer; polishing an edge using a slurry of polishing particles; removing the aluminum layer by polishing using a diamond particles slurry and a non-abrasive polishing sheet
09/25/2008US20080233750 Method for forming fine patterns in semiconductor device
09/25/2008US20080233749 Methods and apparatuses for removing polysilicon from semiconductor workpieces
09/25/2008US20080233748 Etch depth determination for sgt technology
09/25/2008US20080233747 Semiconductor Device Manufactured Using an Improved Plasma Etch Process for a Fully Silicided Gate Flow Process
09/25/2008US20080233746 Method for manufacturing mos transistors utilizing a hybrid hard mask
09/25/2008US20080233745 Interconnect Structures for Semiconductor Devices
09/25/2008US20080233744 Carbon nanotube switches for memory, rf communications and sensing applications, and methods of making the same
09/25/2008US20080233743 Method and Structure for Self-Aligned Device Contacts
09/25/2008US20080233742 Method of depositing aluminum layer and method of forming contact of semiconductor device using the same
09/25/2008US20080233741 Bulk-Isolated PN Diode and Method of Forming a Bulk-Isolated PN Diode
09/25/2008US20080233740 Method for Producing Electrically Conductive Bushings Through Non-Conductive or Semiconductive Substrates
09/25/2008US20080233739 Method for fabricating conductive layer
09/25/2008US20080233738 Methods for fabricating an integrated circuit
09/25/2008US20080233737 Method of fabricating intergrated circuit chip
09/25/2008US20080233736 Process for manufacturing semiconductor integrated circuit device
09/25/2008US20080233735 Etching method for semiconductor element
09/25/2008US20080233734 Method of manufacturing a semiconductor device
09/25/2008US20080233733 Method of wire bonding over active area of a semiconductor circuit
09/25/2008US20080233732 Method of placing wires
09/25/2008US20080233731 Method of Forming Top Electrode for Capacitor and Interconnection in Integrated Passive Device (IPD)
09/25/2008US20080233730 Stacking a conductive layer, a hard mask layer, a metal-based hard mask layer, and an amorphous carbon pattern over a substrate;etching the metal-based hard mask layer using the C pattern as an etch mask, forming photoresist pattern
09/25/2008US20080233728 Semiconductor device and a method for manufacturing the same
09/25/2008US20080233727 Method of manufacturing semiconductor device
09/25/2008US20080233726 Method for Manufacturing Semiconductor Device
09/25/2008US20080233725 Methods for stressing semiconductor material structures to improve electron and/or hole mobility of transistor channels fabricated therefrom, and semiconductor devices including such structures
09/25/2008US20080233723 Plasma doping method and apparatus
09/25/2008US20080233721 METHOD FOR FORMING AlGaN CRYSTAL LAYER
09/25/2008US20080233720 Method of Making a Solar Grade Silicon Wafer
09/25/2008US20080233719 Method for Manufacturing Crystalline Semiconductor Film and Method for Manufacturing Thin Film Transistor
09/25/2008US20080233718 Method of Semiconductor Thin Film Crystallization and Semiconductor Device Fabrication
09/25/2008US20080233717 Soi wafer and manufacturing method thereof
09/25/2008US20080233716 Method for fabricating semiconductor device
09/25/2008US20080233715 Method and apparatus for the laser scribing of ultra lightweight semiconductor devices
09/25/2008US20080233714 Method for fabricating semiconductor device
09/25/2008US20080233713 Method of processing silicon wafer and method of manufacturing liquid ejecting head
09/25/2008US20080233712 Method of manufacturing device
09/25/2008US20080233711 Manufacturing method for devices
09/25/2008US20080233710 Methods for forming single dies with multi-layer interconnect structures and structures formed therefrom
09/25/2008US20080233709 Method for removing material from a semiconductor
09/25/2008US20080233708 Method for manufacturing semiconductor device
09/25/2008US20080233707 Semiconductor device comprising capacitor and method of fabricating the same
09/25/2008US20080233706 Manufacturing method of dynamic random access memory
09/25/2008US20080233705 Method for selectively forming electric conductor and method for manufacturing semiconductor device
09/25/2008US20080233704 Integrated Resistor Capacitor Structure
09/25/2008US20080233703 Polysilicon conductivity improvement in a salicide process technology
09/25/2008US20080233702 Method of forming a recess in a semiconductor structure
09/25/2008US20080233701 Methods of Forming Integrated Circuit Devices Including a Depletion Barrier Layer at Source/Drain Regions
09/25/2008US20080233700 Methods of forming integrated circuitry
09/25/2008US20080233699 BULK FinFET DEVICE
09/25/2008US20080233698 Semiconductor device and method of manufacturing the same
09/25/2008US20080233697 Multiple-gate MOSFET device and associated manufacturing methods
09/25/2008US20080233696 Semiconductor device and method for fabricating the same
09/25/2008US20080233695 Integration method of inversion oxide (TOXinv) thickness reduction in CMOS flow without added pattern
09/25/2008US20080233694 Transistor Device and Method of Manufacture Thereof
09/25/2008US20080233693 Complementary metal-oxide semiconductor (cmos) devices including a thin-body channel and dual gate dielectric layers and methods of manufacturing the same
09/25/2008US20080233692 Method and System for Forming a Controllable Gate Oxide
09/25/2008US20080233691 Method of forming asymmetric spacers and methods of fabricating semiconductor device using asymmetric spacers
09/25/2008US20080233690 Method of Selectively Forming a Silicon Nitride Layer
09/25/2008US20080233689 Method for manufacturing semiconductor device
09/25/2008US20080233688 Method of Fabricating a Bipolar Transistor
09/25/2008US20080233687 Ultra shallow junction formation by epitaxial interface limited diffusion
09/25/2008US20080233686 Esd protection for high voltage applications
09/25/2008US20080233685 Method of manufacture of an apparatus for increasing stability of mos memory cells
09/25/2008US20080233684 Microelectronic component assemblies employing lead frames having reduced-thickness inner lengths
09/25/2008US20080233683 Pre-plated leadframe having enhanced encapsulation adhesion
09/25/2008US20080233682 Methods of forming a cored metallic thermal interface material and structures formed thereby
09/25/2008US20080233681 Design of BEOL Patterns to Reduce the Stresses on Structures Below Chip Bondpads
09/25/2008US20080233680 Semiconductor Die Collet and Method
09/25/2008US20080233679 Semiconductor package with plated connection
09/25/2008US20080233678 Method for manufacturing a semiconductor device
09/25/2008US20080233677 Semiconductor device and method of manufacturing the same
09/25/2008US20080233676 Integrated circuit device with embedded passive component by flip-chip connection and method for manfacturing the same
09/25/2008US20080233675 Method of fabricating nano-wire array
09/25/2008US20080233674 Photo mask and method for fabricating image sensor using the same
09/25/2008US20080233673 Method for fabricating mems-resonator
09/25/2008US20080233672 Method of integrating mems structures and cmos structures using oxide fusion bonding
09/25/2008US20080233671 Method of fabricating GaN LED
09/25/2008US20080233670 Method for Fabricating a P-I-N Light Emitting Diode Using Cu-Doped P-Type Zno
09/25/2008US20080233669 Method for Manufacturing Light-Emitting Device
09/25/2008US20080233667 Microdisplay packaging system
09/25/2008US20080233665 Method of manufacturing a semiconductor device
09/25/2008US20080233664 Semiconductor integrated circuit production method and device
09/25/2008US20080233663 Singulated bare die testing
09/25/2008US20080233662 Advanced Process Control for Semiconductor Processing
09/25/2008US20080233661 Methods and Systems For Lithography Alignment
09/25/2008US20080233518 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition
09/25/2008US20080233514 Acrylic terpolymer with fluorosulfonamide-containing unit e.g. 2-trifluoromethanesulfonylaminoethyl methacrylate, a second unit having pendant acid labile group, and a third unit having a lactone moiety, and an acid generator; good etch resistance and dissolution properties; use making semiconductors
09/25/2008US20080233491 barrier film material includes, in addition to an alkali-soluble polymer, a multivalent carboxylic acid compound having a plurality of carboxyl groups or a multivalent alcohol compound. The multivalent carboxylic acid compound or the multivalent alcohol compound is adhered onto the surface of a resist
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