Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
06/2011
06/09/2011US20110133304 Structure and Method for Placement, Sizing and Shaping of Dummy Structures
06/09/2011US20110133303 MIM/MIS structure with praseodymium titanate or praseodymium oxide as insulator material
06/09/2011US20110133299 Magnetic Tunnel Junction Device
06/09/2011US20110133297 Semiconductor component and method for producing semiconductor components
06/09/2011US20110133295 Region divided substrate and semiconductor device
06/09/2011US20110133294 Micro electromechanical systems (mems) having a gap stop and method therefor
06/09/2011US20110133293 Semiconductor device and semiconductor device manufacturing method
06/09/2011US20110133291 Semiconductor device and method of fabricating same
06/09/2011US20110133290 Semiconductor device and process for producing the same
06/09/2011US20110133289 Multiple doping level bipolar junctions transistors and method for forming
06/09/2011US20110133288 Transistor of semiconductor device and method of fabricating the same
06/09/2011US20110133284 Multiple carbon nanotube transfer and its applications for making high-performance carbon nanotube field-effect transistor (cnfet), transparent electrodes, and three-dimensional integration of cnfets
06/09/2011US20110133283 Semiconductor device and method for forming the same
06/09/2011US20110133280 Different thickness oxide silicon nanowire field effect transistors
06/09/2011US20110133276 Gate Dielectric Formation for High-Voltage MOS Devices
06/09/2011US20110133274 Lateral double-diffused mosfet
06/09/2011US20110133273 Semiconductor device and manufacturing method thereof
06/09/2011US20110133272 Semiconductor device with improved on-resistance
06/09/2011US20110133271 Trench MOS Device with Schottky Diode and Method for Manufacturing Same
06/09/2011US20110133267 Method of fabricating semiconductor device and the semiconductor device
06/09/2011US20110133266 Flash Memory Having a Floating Gate in the Shape of a Curved Section
06/09/2011US20110133264 System and method for eeprom architecture
06/09/2011US20110133261 Semiconductor device and method of manufacturing the same
06/09/2011US20110133258 Shielded gate trench mosfet with increased source-metal contact
06/09/2011US20110133257 Transferred thin film transistor and method for manufacturing the same
06/09/2011US20110133255 Apparatus and method for molecule detection using nanopores
06/09/2011US20110133251 Gated algan/gan heterojunction schottky device
06/09/2011US20110133250 Monolithic microwave integrated circuit device and method for forming the same
06/09/2011US20110133248 Vertical pmos field effect transistor and manufacturing method thereof
06/09/2011US20110133247 Zener-Triggered SCR-Based Electrostatic Discharge Protection Devices For CDM And HBM Stress Conditions
06/09/2011US20110133232 Lead frame, its manufacturing method, and semiconductor light emitting device using the same
06/09/2011US20110133212 Methods of making semiconductor devices having implanted sidewalls and devices made thereby
06/09/2011US20110133211 Semiconductor device and method of manufacturing the same
06/09/2011US20110133210 Schottky barrier diode and method for manufacturing schottky barrier diode
06/09/2011US20110133209 GaN SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
06/09/2011US20110133202 High throughput recrystallization of semiconducting materials
06/09/2011US20110133201 Electronic circuit
06/09/2011US20110133199 Arrray substrate for liquid crystal display device and method of fabricating the same
06/09/2011US20110133195 Thin film transistor, display device including the same, and method of manufacturing the display device
06/09/2011US20110133193 Thin film transistor substrate and the method thereof
06/09/2011US20110133191 Semiconductor device and manufacturing method thereof
06/09/2011US20110133189 NMOS ARCHITECTURE INVOLVING EPITAXIALLY-GROWN IN-SITU N-TYPE-DOPED EMBEDDED eSiGe:C SOURCE/DRAIN TARGETING
06/09/2011US20110133185 Semiconductor device formation substrate and semiconductor device manufacturing method
06/09/2011US20110133180 Semiconductor device and manufacturing method thereof
06/09/2011US20110133179 Semiconductor device and manufacturing method thereof
06/09/2011US20110133177 Semiconductor Element, Semiconductor Device, And Method For Manufacturing The Same
06/09/2011US20110133169 Gate-All-Around Nanowire Tunnel Field Effect Transistors
06/09/2011US20110133168 Quantum-well-based semiconductor devices
06/09/2011US20110133167 Planar and nanowire field effect transistors
06/09/2011US20110133166 Nanowire fet having induced radial strain
06/09/2011US20110133165 Self-aligned contacts for nanowire field effect transistors
06/09/2011US20110133164 Omega Shaped Nanowire Field Effect Transistors
06/09/2011US20110133163 Nanowire fet having induced radial strain
06/09/2011US20110133162 Gate-All-Around Nanowire Field Effect Transistors
06/09/2011US20110133161 Omega Shaped Nanowire Tunnel Field Effect Transistors
06/09/2011US20110133158 Method for fabricating ingan-based multi-quantum well layers
06/09/2011US20110133153 Porous nanostructure and method of manufacturing the same
06/09/2011US20110133152 Resistive memory device and method for fabricating the same
06/09/2011US20110133151 Memory cell that includes a carbon-based memory element and methods of forming the same
06/09/2011US20110133149 Resistance change memory and manufacturing method thereof
06/09/2011US20110133148 Resistive memory device and method of fabricating the same
06/09/2011US20110132873 Substrate processing apparatus, method for measuring distance between electrodes, and storage medium storing program
06/09/2011US20110132757 Sputtering Target with Few Surface Defects, and Surface Processing Method Thereof
06/09/2011US20110132541 Vacuum processing apparatus and plasma processing apparatus with temperature control function for wafer stage
06/09/2011US20110132462 Modified copper-zinc-tin semiconductor films, uses thereof and related methods
06/09/2011US20110132449 Multilayer film for encapsulating oxygen and/or moisture sensitive electronic devices
06/09/2011US20110132423 Photovoltaic solar module comprising bifacial solar cells
06/09/2011US20110132260 Manufacturing apparatus
06/09/2011US20110132259 Electrostatic chuck and vacuum processing apparatus
06/09/2011US20110132088 Flexure assemblies and methods for manufacturing and using the same
06/09/2011US20110131804 Substrate treating apparatus and method for manufacturing semiconductor device
06/09/2011US20110131800 Front opening wafer contaner with path to ground effectuated by door
06/09/2011DE202011002844U1 Erweiterungselektrode einer Plasmaschrägkantenätzvorrichtung Extension electrode of a Plasmaschrägkantenätzvorrichtung
06/09/2011DE19819456B4 Verfahren zur Herstellung eines mikromechanischen Bauelements A process for producing a micromechanical component
06/09/2011DE112009001875T5 Waferpolierverfahren und Doppelseitenpoliervorrichtung Wafer polishing method and double-side polishing apparatus
06/09/2011DE112009001826T5 Herstellungsverfahren für einen epitaktischen Wafer und die dabei zum Halten des Wafer verwendete Haltevorrichtung Manufacturing method of an epitaxial wafer and the holding device used in this case to hold the wafer
06/09/2011DE112009001683T5 Polierzusammensetzung Polishing composition
06/09/2011DE112006000598B4 Transistor, Verfahren zur Herstellung einer Halbleiteranordnung sowie zugehörige Komplementär-Halbleiter-Anordnung Transistor, method of manufacturing a semiconductor device and associated semiconductor arrangement complementary
06/09/2011DE10262313B4 Verfahren zur Herstellung eines Halbleiterbauelementes und Halbleiterbauelement A process for producing a semiconductor device and semiconductor device
06/09/2011DE10256978B4 Verfahren zum Herstellen einer Flashspeicherzelle A method of manufacturing a flash memory cell
06/09/2011DE10223729B4 Verfahren zur Herstellung einer Halbleitervorrichtung, die Imstande ist eine dynamische Größe zu erfassen A method of manufacturing a semiconductor device which is capable of detecting a dynamic amount
06/09/2011DE102010062419A1 Bereichsunterteiltes Substrat und Halbleiterbauelement Range Divided substrate and semiconductor device
06/09/2011DE102010062113A1 Abscheidungsquelle, Abscheidungsvorrichtung, die diese aufweist, und Verfahren zur Ausbildung eines Dünnfilms Deposition source, the deposition apparatus having these, and methods for forming a thin film
06/09/2011DE102010061011A1 Halbleiterbaugruppe und Verfahren zum Herstellen derselben A semiconductor package and method for manufacturing the same
06/09/2011DE102010060503A1 Laminatelektronikbauelement Laminate electronic component
06/09/2011DE102010051765A1 Package mit einem Unterfüllmaterial in einem Teil eines Bereichs zwischen dem Package und einem Substrat oder einem anderen Package Package with an underfill material in a part of a region between the package and a substrate or a different package
06/09/2011DE102010049472A1 Wire saw for cutting e.g. single crystal ingots of raw silicon for producing silicon wafer utilized for manufacturing computer chip in semiconductor industry, has stripping bars attached to wire field over breadth of field cutting surface
06/09/2011DE102010046506A1 Flash-Speicher mit einem Floating-Gate in der Gestalt eines gekrümmten Abschnitts Flash memory using a floating gate in the shape of a curved portion
06/09/2011DE102010043450A1 Method for fabricating cellular trench metal oxide semiconductor field effect transistor (MOSFET) in power conversion system, involves titanizing crystally second gate conductor layer to form titanium (Ti)-gate conductor layer
06/09/2011DE102009057416A1 Power semiconductor module, has heat conductive paste layer that is provided with number of bars spaced along longitudinal central line of module, where bars are tapered from longitudinal central line at both ends
06/09/2011DE102009056603A1 Semiconductor arrangement manufacturing method, involves partially optimizing deceleration oxide and scattering oxide such that photons are raised to surface of guard ring and silicide is limited in guard ring area
06/09/2011DE102009047599A1 Elektromechanischer Mikroschalter zur Schaltung eines elektrischen Signals, mikroelektromechanisches System, integrierte Schaltung und Verfahren zur Herstellung einer integrierten Schaltung The micro electromechanical switch for switching an electrical signal, microelectromechanical system, integrated circuit and methods for making an integrated circuit
06/09/2011DE102009047592A1 Silicon sub-carrier manufacturing method for installing e.g. electronic device, on substrate, involves applying electrically conductive material on insulation layer to form through-connection from one side to another side of substrate
06/09/2011DE102009047506A1 Sensor mit einem Sensorgehäuse Sensor with a sensor casing
06/09/2011DE102009047483A1 Vorrichtung und Verfahren zur Erzeugung von Chalkopyrit-Absorberschichten in Solarzellen Apparatus and method for producing chalcopyrite absorber layer in solar cells
06/09/2011DE102009047374A1 Method for manufacturing micro and/or nano chip carrier component, involves arranging chip on carrier, and applying pressure on chip against carrier, so that adhesive layer is formed between chip and carrier
06/09/2011DE102009047352A1 Schichtaufbau zu elektrischen Kontaktierung von Halbleiterbauelementen Layer structure for electrically contacting semiconductor devices
06/09/2011DE102009047308A1 Method for manufacturing semiconductor device, involves forming metal silicide in silicon-containing semiconductor material
06/09/2011DE102009002813B4 Verfahren zur Herstellung eines Transistorbauelements mit einer Feldplatte A process for producing a transistor device with a field plate
06/09/2011DE102008062488B4 Halbleiterbauelement und Verfahren zur Herstellung des Bauelementes Semiconductor device and process for the preparation of the component