Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
09/2011
09/01/2011US20110212552 Device manufacturing method
09/01/2011US20110212551 Contactor, test device for semiconductor apparatus, and method for manufacturing semiconductor apparatus
09/01/2011US20110212550 Methods for detecting metal precipitates in a semiconductor wafer
09/01/2011US20110212549 Apparatus and method for predetermined component placement to a target platform
09/01/2011US20110212548 Method for semiconductor gate hardmask removal and decoupling of implants
09/01/2011US20110212547 Methods for monitoring the amount of metal contamination imparted into wafers during a semiconductor process
09/01/2011US20110212546 Uv absorption based monitor and control of chloride gas stream
09/01/2011US20110212545 Ferroelectric passive memory cell, device and method of manufacture thereof
09/01/2011US20110212391 Polymer, chemically amplified positive resist composition and pattern forming process
09/01/2011US20110212390 Chemically amplified negative resist composition and patterning process
09/01/2011US20110212255 Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus
09/01/2011US20110211936 Conveying device and vacuum apparatus
09/01/2011US20110211817 Method for heating part in processing chamber of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus
09/01/2011US20110211399 Method of manufacturing a vertical-type semiconductor device and method of operating a vertical-type semiconductor device
09/01/2011US20110211394 Field effect transistors for a flash memory comprising a self-aligned charge storage region
09/01/2011US20110211390 Semiconductor device and its manufacturing method
09/01/2011US20110211387 Scalable nonvolatile memory
09/01/2011US20110211186 Exposure apparatus, exposure method and device manufacturing method
09/01/2011US20110211181 Lithographic apparatus and device manufacturing method
09/01/2011US20110210956 Current sensor for a semiconductor device and system
09/01/2011US20110210722 Integrated magnetic sensor for detecting horizontal magnetic fields and manufacturing process thereof
09/01/2011US20110210708 High Frequency Power Supply Module Having High Efficiency and High Current
09/01/2011US20110210452 Through-substrate via and redistribution layer with metal paste
09/01/2011US20110210451 Methods of forming a metal pattern and semiconductor device structure
09/01/2011US20110210447 Contact elements of semiconductor devices comprising a continuous transition to metal lines of a metallization layer
09/01/2011US20110210445 Semiconductor device having via connecting between interconnects
09/01/2011US20110210444 3D Semiconductor Package Using An Interposer
09/01/2011US20110210443 Semiconductor device having bucket-shaped under-bump metallization and method of forming same
09/01/2011US20110210442 Semiconductor Package and Trace Substrate with Enhanced Routing Design Flexibility and Method of Manufacturing Thereof
09/01/2011US20110210440 Stackable electronic package and method of fabricating same
09/01/2011US20110210439 Semiconductor Package and Manufacturing Method Thereof
09/01/2011US20110210438 Thermal Vias In An Integrated Circuit Package With An Embedded Die
09/01/2011US20110210437 Integrated circuit packaging system with exposed conductor and method of manufacture thereof
09/01/2011US20110210436 Integrated circuit packaging system with encapsulation and method of manufacture thereof
09/01/2011US20110210435 Mems devices
09/01/2011US20110210434 Semiconductor device and method of manufacturing a semiconductor device
09/01/2011US20110210432 Semiconductor device and method of manufacturing the same
09/01/2011US20110210431 Microwave circuit package
09/01/2011US20110210430 Device with ground plane for high frequency signal transmission and method therefor
09/01/2011US20110210429 Semiconductor Substrate, Package and Device and Manufacturing Methods Thereof
09/01/2011US20110210428 Method for producing a semiconductor component, semiconductor component and intermediate product in the production thereof
09/01/2011US20110210427 Strain memorization in strained soi substrates of semiconductor devices
09/01/2011US20110210425 Formation of group iii-v material layers on patterned substrates
09/01/2011US20110210424 Semiconductor device and method for manufacturing the same
09/01/2011US20110210423 Integrated circuit devices having a strontium ruthenium oxide interface
09/01/2011US20110210422 Semiconductor device and method for manufacturing the same
09/01/2011US20110210418 Electrostatic Discharge Devices
09/01/2011US20110210415 Freestanding carbon nanotube networks based temperature sensor
09/01/2011US20110210414 Infrared sensor
09/01/2011US20110210411 Ultra thin flip-chip backside device sensor package
09/01/2011US20110210408 Sensor device, method of manufacturing sensor device, motion sensor, and method of manufacturing motion sensor
09/01/2011US20110210405 Metal nitride film, semiconductor device using the metal nitride film, and manufacturing method of semiconductor device
09/01/2011US20110210404 Epitaxy Profile Engineering for FinFETs
09/01/2011US20110210403 Novel structures and methods to stop contact metal from extruding into replacement gates
09/01/2011US20110210402 Metal-gate high-k reference structure
09/01/2011US20110210399 Semiconductor device and manufacturing method thereof
09/01/2011US20110210398 Transistors comprising high-k metal gate electrode structures and adapted channel semiconductor materials
09/01/2011US20110210397 One-time programmable semiconductor device
09/01/2011US20110210393 Dual epitaxial process for a finfet device
09/01/2011US20110210389 Transistor Comprising a Buried High-K Metal Gate Electrode Structure
09/01/2011US20110210388 Integrated native device without a halo implanted channel region and method for its fabrication
09/01/2011US20110210386 Devices with nanocrystals and methods of formation
09/01/2011US20110210384 Scalable integrated MIM capacitor using gate metal
09/01/2011US20110210380 Contact bars with reduced fringing capacitance in a semiconductor device
09/01/2011US20110210378 High electron mobility transistor, epitaxial wafer, and method of fabricating high electron mobility transistor
09/01/2011US20110210377 Nitride semiconductor device
09/01/2011US20110210376 Insulated gate field effect transistor having passivated schottky barriers to the channel
09/01/2011US20110210375 Semiconductor device and method of manufacturing the same
09/01/2011US20110210374 Tri-Gate Field-Effect Transistors Formed by Aspect Ratio Trapping
09/01/2011US20110210348 Organic light-emitting device and method of manufacturing the same
09/01/2011US20110210347 Semiconductor device and method of manufacturing the same
09/01/2011US20110210336 Semiconductor Device and Fabrication Method Thereof
09/01/2011US20110210333 Semiconductor Device
09/01/2011US20110210329 Apparatus and method for predetermined component placement to a target platform
09/01/2011US20110210325 Semiconductor device and manufacturing method thereof
09/01/2011US20110210314 Graphene electronic device and method of fabricating the same
09/01/2011US20110210309 Tubular nanostructures, processes of preparing same and devices made therefrom
09/01/2011US20110210307 Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell
09/01/2011US20110210306 Memory cell that includes a carbon-based memory element and methods of forming the same
09/01/2011US20110210305 Method to program a memory cell comprising a carbon nanotube fabric element and a steering element
09/01/2011US20110210301 Non-volatile semiconductor memory device and method of manufacturing non-volatile semiconductor memory device
09/01/2011US20110209828 Method and apparatus for plasma processing
09/01/2011US20110209827 Automatic matching unit and plasma processing apparatus
09/01/2011US20110209664 Substrate processing apparatus
09/01/2011US20110209413 Non-Spherical Silica Sol, Process for Producing the Same, and Composition for Polishing
09/01/2011DE102011000911A1 Nitridhalbleiterbauelement The nitride semiconductor
09/01/2011DE102010009795A1 Uniformly coating substrates with metallic back contacts by depositing vaporized evaporation products in process chamber of continuous coating system and annealing process, comprises carrying out annealing process during coating process
09/01/2011DE102010009558A1 Method for manufacturing textured transparent conductive oxide layer utilized for manufacturing e.g. solar cell, involves forming transparent conductive oxide sacrificial layer on transparent conductive oxide layer before etching process
09/01/2011DE102010009454A1 Waferäquivalent, Verfahren zu dessen Herstellung sowie Verwendung Wafer equivalents, to processes for its preparation and use
09/01/2011DE102010002455A1 Feldeffekttransistoren für Flash-Speicher mit einem selbstjustierten Ladungsspeichergebiet Field-effect transistors for flash memory with a self-adjusting charge storage region
09/01/2011DE102010002454A1 Metallisierungssystem eines Halbleiterbauelements mit verrundeten Verbindungen, die durch Hartmaskenverrundung hergestellt sind Metallization of a semiconductor device with rounded compounds that are produced by Hartmaskenverrundung
09/01/2011DE102010002453A1 Bewertung der Metallstapelintegrität in komplexem Halbleiterbauelementen durch mechanisches Verspannen von Chipkontakten Evaluation of the metal stack integrity in complex semiconductor devices by mechanical clamping of chip contacts
09/01/2011DE102010002451A1 Kontaktelemente von Halbleiterbauelementen, die einen kontinuierlichen Übergang zu Metallleitungen einer Metallisierungsschicht besitzen Contact elements of semiconductor devices, which have a continuous transition to metal lines of a metallization layer
09/01/2011DE102010002450A1 Transistoren mit Metallgateelektrodenstrukturen mit großem ε und angepassten Kanalhalbleitermaterialien Transistors with metal gate electrode structures with large ε and adjusted channel semiconductor materials
09/01/2011DE102010002412A1 Transistor mit vergrabener Metallgateelektrodenstruktur mit großem ε Transistor with buried metal gate electrode structure with large ε
09/01/2011DE102010002411A1 Kontaktbalken mit reduzierter Randzonenkapazität in einem Halbleiterbauelement Contact bar with reduced peripheral zone capacity in a semiconductor device
09/01/2011DE102010002410A1 Verformungsgedächnistechnologie in verformten SOI-Substraten von Halbleiterbauelementen Verformungsgedächnistechnologie deformed in SOI substrates of semiconductor devices
09/01/2011DE102010000951A1 Power semiconductor module for use on printed circuit board, has planar, structured metallization arranged on insulating substrate, where metallization has connected portion, and bonding wire bonded at bonding areas at connected portion
09/01/2011DE102009006881B4 Verfahren zur Hohlraumversiegelung in einem dielektrischen Material einer Kontaktebene eines Halbleiterbauelements, das dicht liegende Transistoren aufweist und Halbleiterbauelement mit derselben A method for sealing cavities in a dielectric material of a contact layer of a semiconductor device, the transistors closely positioned and comprises semiconductor device with the same
09/01/2011DE102009006822B4 Mikrostruktur, Verfahren zu deren Herstellung, Vorrichtung zum Bonden einer Mikrostruktur und Mikrosystem Microstructure, to processes for their preparation, to apparatus for bonding a micro-structure and micro-system