H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
11/2011
11/03/2011	US20110266445 Optically transitioning thermal detector structures
11/03/2011	US20110266351 Method for producing an rfid transponder product, and rfid transponder product produced using the method
11/03/2011	US20110266193 Wafer Container With Purgeable Supporting Module
11/03/2011	US20110266192 Wafer container with oval latch
11/03/2011	US20110266041 Method for embedding a component in a base
11/03/2011	US20110266034 Preventing breakage of long metal signal conductors on semiconductor substrates
11/03/2011	US20110265952 Microwave plasma processing device and gate valve for microwave plasma processing device
11/03/2011	US20110265950 Semiconductor device manufacturing method and target substrate processing system
11/03/2011	US20110265718 Semiconductor manufacturing apparatus and semiconductor manufacturing method
11/03/2011	US20110265574 System on a Chip Using Integrated MEMS and CMOS Devices
11/03/2011	US20110265279 Cleaning sponge roller
11/03/2011	DE112005003338B4 Niederdruck-Entfernung von Photoresist und Ätzresten A low-pressure removal of photoresist and etching residues
11/03/2011	DE102010028466A1 Bewahren der Integrität eines Gatestapels mit großem ε nach Einbettung in ein Verspannungsmaterial unter Anwendung einer Beschichtung Preserving the integrity of a gate stack with large ε after embedding in a bracing material using a coating
11/03/2011	DE102010028465A1 Halbleiterbauelement mit Metallgate und Halbleiterwiderständen, die auf der Grundlage eines Austauschgateverfahrens hergestellt sind A semiconductor device with metal gate and semiconductor resistors which are formed on the basis of a replacement gate method
11/03/2011	DE102010028464A1 Reduzierter STI-Verlust für bessere Oberflächenebenheit eingebetteter Verspannungsmaterialien in dicht gepackten Halbleiterbauelementen Reduced STI loss for better surface flatness embedded bracing materials in densely packed semiconductor devices
11/03/2011	DE102010028463A1 Halbleiterbauelement mit komplexen leitenden Elementen in einem dielektrischen Materialsystem, das unter Anwendung einer Barrierenschicht hergestellt ist A semiconductor device with conductive elements in a complex dielectric material system which is fabricated using a barrier layer
11/03/2011	DE102010028462A1 Verspannungsgedächtnistechnik mit geringerer Randzonenkapazität auf der Grundlage von Siliziumnitrid in MOS-Halbleiterbauelementen Stress memorization technique with lower marginal zone capacity on the basis of silicon MOS semiconductor devices
11/03/2011	DE102010028461A1 Einebnung eines Materialsystems in einem Halbleiterbauelement unter Anwendung eines nicht-selektiven in-situ zubereiteten Schleifmittels Leveling a material system in a semiconductor device using a non-selective in-situ prepared abrasive
11/03/2011	DE102010028460A1 Reduzierte Defektrate in Kontakten eines Halbleiterbauelements, das Austauschgateelektrodenstrukturen unter Anwendung einer Zwischendeckschicht aufweist Has reduced defect rate in contacts of a semiconductor device, the replacement gate electrode structures using an intermediate cover layer
11/03/2011	DE102010028459A1 Reduzierte STI-Topographie in Metallgatetransistoren mit großem ε durch Verwendung einer Maske nach Abscheidung einer Kanalhalbleiterlegierung Reduced STI topography in metal gate transistors with large ε by using a mask after deposition of a semiconductor alloy channel
11/03/2011	DE102010028458A1 Halbleiterbauelement mit Kontaktelementen und Metallsilizidgebieten, die in einer gemeinsamen Prozesssequenz hergestellt sind Semiconductor component with contact elements and metal silicide, which are manufactured in a common process sequence
11/03/2011	DE102010019132A1 Verfahren zur Bestimmung von Materialparametern eines dotierten Halbleitersubstrates durch Messung von Photolumineszenzstrahlung A method of determining parameters of a doped semiconductor material substrate by measuring photoluminescence
11/03/2011	DE102010018663A1 Work station, useful for processing or fixing first component, or processing woven fabric using light-curing material, comprises a microscope device and a device for curing the light-curing material using light
11/03/2011	DE102010018570A1 Verfahren zur Herstellung einer Vielzahl von Halbleiterscheiben durch Bearbeiten eines Einkristalls A process for producing a plurality of semiconductor wafers by machining a single crystal
11/03/2011	DE102010001402B4 Verringerung der Kontamination in einem Prozessablauf zur Herstellung einer Kanalhalbleiterlegierung in einem Halbleiterbauelement Reduce the contamination in a process flow for forming a semiconductor alloy channel in a semiconductor device
11/03/2011	DE102009051317B4 Verfahren zur Herstellung eines Halbleiterbauelement A method for producing a semiconductor device
11/03/2011	DE10128928B4 Halbleiterspeichervorrichtung, die keinen Floating-Body-Effekt aufweist, und dazugehöriges Herstellungsverfahren A semiconductor memory device having no floating-body effect, and related production method
11/03/2011	CA2775923A1 Silicon carbide crystal and method of manufacturing silicon carbide crystal
11/02/2011	EP2384103A1 Electronic device manufacturing method and electronic device
11/02/2011	EP2384098A1 Plasma processing equipment and plasma generation equipment
11/02/2011	EP2383790A1 Semiconductor device with a drain region underlying a gate contact pad
11/02/2011	EP2383789A1 Semiconductor device having a conductive field plate layer
11/02/2011	EP2383788A1 Semiconductor device with a main base region
11/02/2011	EP2383787A1 Silicon carbide power MOS field effect transistors
11/02/2011	EP2383784A1 Method for manufacturing silicon carbide semiconductor element
11/02/2011	EP2383778A2 Semiconductor device, and method for manufacturing the same
11/02/2011	EP2383777A1 Multilevel interconnect structures and methods for fabricating same
11/02/2011	EP2383776A1 Solid state nanopore device for evaluating biopolymers
11/02/2011	EP2383775A2 Verfahren zum Erhalten einer Luftschicht mit deutlich vertikalen Flanken
11/02/2011	EP2383774A1 Film deposition device and gas ejection member
11/02/2011	EP2383773A2 Method of electrochemical-mechanical polishing of silicon carbide wafers
11/02/2011	EP2383772A1 Method for producing silicon carbide semiconductor device
11/02/2011	EP2383771A1 Method and device for loosening a polymer coating from a surface of a substrate
11/02/2011	EP2383367A1 Substrate support stage of plasma processing apparatus
11/02/2011	EP2383366A1 Method for producing diamond-like carbon membrane
11/02/2011	EP2383273A1 Aromatic compound and method for producing same
11/02/2011	EP2383209A1 Automated warehouse
11/02/2011	EP2382665A2 Flash cell with integrated high-k dielectric and metal-based control gate
11/02/2011	EP2382664A2 Embedded memory cell and method of manufacturing same
11/02/2011	EP2382661A2 Integrated electronic device with transceiving antenna and magnetic interconnection
11/02/2011	EP2382658A1 Redundant metal barrier structure for interconnect applications
11/02/2011	EP2382657A1 Process to dissolve the oxide layer in the peripheral ring of a structure of semiconductor-on-insulator type
11/02/2011	EP2382656A2 Method for separating a layer system comprising a wafer
11/02/2011	EP2382655A1 A test method on the support substrate of a substrate of the "semiconductor on insulator" type
11/02/2011	EP2382654A1 High-temperature-resistant component structure free of soldering agent, and method for electrical contact-connection
11/02/2011	EP2382653A1 Method for preparing cds film
11/02/2011	EP2382652A2 Quantum well mosfet channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
11/02/2011	EP2382650A2 Method of producing a component of a device, and the resulting components and devices
11/02/2011	EP2382151A2 Bonded microelectromechanical assemblies
11/02/2011	EP2062291B1 Method of manufacturing a bipolar transistor
11/02/2011	EP1952427B1 Apparatus and method for wet-chemical processing of flat, thin substrates in a continuous method
11/02/2011	EP1928764B1 Reticle pod
11/02/2011	EP1890336B1 High-voltage MOS transistor device and method of making the same
11/02/2011	EP1883954B1 Uniform chemical etching method
11/02/2011	EP1733438B1 Laser patterning of light emitting devices and patterned light emitting devices
11/02/2011	EP1551058B1 Annealed wafer manufacturing method
11/02/2011	EP1502485B1 Method of generating extreme ultraviolet radiation
11/02/2011	EP1412976B1 Boron-doped titanium nitride layer for high aspect ratio semiconductor devices
11/02/2011	EP1393351B1 Method and device for doping, diffusion and oxidation of silicon wafers under reduced pressure
11/02/2011	EP1289355B1 Method for producing ceramic substrate
11/02/2011	EP1278238B1 Method for sealing fine groove with siliceous material
11/02/2011	EP1099140B1 Maskless photolithography system
11/02/2011	CN202025789U Graphite clamp assembly
11/02/2011	CN202025745U Base material with metallized surface
11/02/2011	CN202025731U Fixing assembly for base
11/02/2011	CN202025730U Chuck device
11/02/2011	CN202025729U Extraction, turning and placement equipment for wafer level packaged minichips
11/02/2011	CN202025728U Rotating disk of transistor charging machine
11/02/2011	CN202025727U Intermittent transmission heating device
11/02/2011	CN202025726U Automatic diode-arranging machine
11/02/2011	CN202025725U Vacuum control system for preventing falling of chip
11/02/2011	CN202025724U Reversed electrode preventer for placement machines
11/02/2011	CN202025723U Push-pull boat device and heating furnace device
11/02/2011	CN202025722U Sink-preventing locking device for wire bonder
11/02/2011	CN202021131U Wet processing device
11/02/2011	CN1993817B Floating gate memory cell
11/02/2011	CN1957460B DRAM structures with source/drain pedestals and manufacturing method thereof
11/02/2011	CN1836017B Coating composition and low dielectric siliceous material produced by using same
11/02/2011	CN1802609B Developer composition for resists and method for formation of resist pattern
11/02/2011	CN1667798B Method and apparatus for cleaving a wafer, method and apparatus for manufacturing semiconductor device
11/02/2011	CN1624588B Immersion lithographic system and method of manufacturing semiconductor device
11/02/2011	CN102232248A Semiconductor device and manufacturing method therefor
11/02/2011	CN102232245A Method for producing a metal contact on a semiconductor substrate provided with a coating
11/02/2011	CN102232243A Front end of line plasma mediated ashing processes and apparatus
11/02/2011	CN102232242A Polishing solution for CMP and polishing method using the polishing solution
11/02/2011	CN102232241A Excited gas injection for ion implant control
11/02/2011	CN102232240A Film-forming apparatus and film-forming method
11/02/2011	CN102232239A Systems and methods for the crystallization of thin films
11/02/2011	CN102232190A Probe card
11/02/2011	CN102232127A Method for improving the adhesion between silver surfaces and resin materials

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