Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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02/02/2012 | DE102010038737A1 Transistoren mit Metallgateelektrodenstrukturen mit großem ε, die in verformungsinduzierenden Halbleiterlegierungen eingebettet sind, die in einer späten Phase hergestellt sind Transistors with metal gate electrode structures with large ε, which are embedded in strain-inducing semiconductor alloy, which are made at a late stage |
02/02/2012 | DE102010038736A1 Verfahren zum Steuern der kritischen Abmessungen von Gräben in einem Metallisierungssystem eines Halbleiterbauelements während des Ätzens einer Ätzstoppschicht A method for controlling critical dimensions of trenches in a metallization system of a semiconductor device during the etching of an etch stop layer |
02/02/2012 | DE102010038727A1 Leistungshaltleitermodul, Verfahren zur Herstellung eines Leistungshalbleitermoduls und eines Gehäuseelements für ein Leistungshalbleitermodul Maintenance power semiconductor module, method for producing a power semiconductor module and a casing element for a power semiconductor module |
02/02/2012 | DE102010038648A1 Device for determining divergence and/or wave front curvature of laser ray bundle in laser crystallization device, has determination device determining divergence and/or wave front curvature of ray bundle from evaluated local expansion |
02/02/2012 | DE102010038453A1 Lötstellenkontrolle Solder joint inspection |
02/02/2012 | DE102010033256A1 Methode zur Erzeugung gezielter Strömungs- und Stromdichtemuster bei der chemischen und elektrolytischen Oberflächenbehandlung Method for generating targeted flow and current density patterns in chemical and electrolytic surface treatment |
02/02/2012 | DE102010026331A1 Verfahren zum Materialabtrag an Festkörpern Method for removing material from solids |
02/02/2012 | DE102009047890B4 Herstellverfahren für ein Halbleiterbauelement und Halbleiterbauelement mit Verbessertem Füllverhalten in einem Austauschgateverfahren durch Eckenverrundung auf der Grundlage eines Opferfüllmaterials Manufacturing process for a semiconductor device and semiconductor device with improved filling behavior in an exchange gate process by corner rounding on the basis of a sacrificial filler |
02/02/2012 | DE102009043329B4 Verspannungstechnologie in einer Kontaktebene von Halbleiterbauelementen mittels verspannter leitender Schichten und einem Isolierabstandshalter bei einem Halbleiterbauelement Bracing technology in a contact plane of semiconductor devices using strained conductive layers and an insulating spacer in a semiconductor device |
02/02/2012 | DE102009031156B4 Halbleiterbauelement mit nicht-isolierenden verspannten Materialschichten in einer Kontaktebene und Verfahren zu dessen Herstellung A semiconductor device having non-insulating strained material layers in a contact plane and process for its preparation |
02/02/2012 | DE102009023250B4 Halbleiterbauelement-Herstellverfahren mit erhöhter Ätzstoppfähigkeit während der Strukturierung von siliziumnitridenthaltenden Schichtstapeln durch Vorsehen einer chemisch hergestellten Oxidschicht während der Halbleiterbearbeitung Semiconductor device manufacturing method with increased Ätzstoppfähigkeit during the patterning of siliziumnitridenthaltenden layer stacks by providing an oxide layer chemically produced during the semiconductor processing |
02/02/2012 | DE102007052053B4 Eine Zugverformungsquelle unter Anwendung von Silizium/Germanium-Material in global verformtem Silizium A Zugverformungsquelle using silicon / germanium material in globally strained silicon |
02/02/2012 | DE102007046085B4 Nanoröhrenverstärkte Lötkappe, Prozess zur Herstellung derselben und Rechenystem, die diese enthält Nanotubes reinforced Lötkappe, process for producing the same and Rechenystem that contains these |
02/02/2012 | DE102007041210B4 Verfahren zur Verspannungsübertragung in einem Zwischenschichtdielektrikum durch Vorsehen einer verspannten dielektrischen Schicht über einem verspannungsneutralen dielektrischen Material in einem Halbleiterbauelement und entsprechendes Halbleiterbauelement A method for stress transmission in an interlayer by providing a stressed dielectric layer over a stress-neutral dielectric material in a semiconductor device and semiconductor device corresponding |
02/02/2012 | DE102006060400B4 Speichervorrichtung sowie Verfahren zum Herstellen derselben Memory device and methods for manufacturing the same |
02/02/2012 | DE102006051550B4 Verfahren und Vorrichtung zum Strukturieren von Bauteilen unter Verwendung eines Werkstoffs auf der Basis von Siliziumoxid Method and apparatus for patterning of components using a material based on silica |
02/02/2012 | DE102006044370B4 Integrierte Speicherzellenanordnung Integrated memory cell array |
02/02/2012 | DE102005049593B4 Halbleiterbauelementanordnung und Verfahren zu deren Herstellung A semiconductor device assembly and method for their preparation |
02/02/2012 | DE102005046726B4 Nichtpolierte monokristalline Siliziumscheibe und Verfahren zu ihrer Herstellung Not polished monocrystalline silicon wafer and processes for their preparation |
02/02/2012 | DE102005033916B4 Ausrichtung eines MTJ-Stapels an Leiterbahnen in Abwesenheit von Topographie Orientation of a MTJ stack of printed conductors in the absence of topography |
02/02/2012 | DE102004010127B4 Halbleitervorrichtung mit einer Grabengatestruktur und Verfahren zum Herstellen dergleichen Like semiconductor device with a grave gate structure and methods for preparing |
02/02/2012 | DE10055431B4 Verfahren zum Herstellen von Kondensatoren eines Halbleiterbauelements A process for producing capacitors of a semiconductor device |
02/02/2012 | CA2806687A1 Method of producing a light emitting device |
02/01/2012 | EP2413372A2 Method for fabricating concentrated solar cell chip without edge current leakage |
02/01/2012 | EP2413366A1 A switching element of LCDs or organic EL displays |
02/01/2012 | EP2413365A1 Mosfet and method for manufacturing mosfet |
02/01/2012 | EP2413364A1 Mosfet and method for manufacturing mosfet |
02/01/2012 | EP2413352A2 Soi wafer and method for producing soi wafer |
02/01/2012 | EP2413350A1 Substrate for growing group-iii nitride semiconductors, epitaxial substrate for group-iii nitride semiconductors, group-iii nitride semiconductor element, stand-alone substrate for group-iii nitride semiconductors, and methods for manufacturing the preceding |
02/01/2012 | EP2413349A1 Plasma processing apparatus and method of producing amorphous silicon thin film using same |
02/01/2012 | EP2413348A1 Semiconductor substrate, semiconductor device, and method of producing semiconductor substrate |
02/01/2012 | EP2413347A1 Fringe capacitor based on fractal patterns |
02/01/2012 | EP2413122A1 High-temperature capacitive static/dynamic pressure sensors and methods of making the same |
02/01/2012 | EP2412849A1 Silicon wafer and method for manufacturing same |
02/01/2012 | EP2412519A1 Film with attached metal layer for electronic components, production method thereof, and applications thereof |
02/01/2012 | EP2412213A1 Improvements in or relating to pcb-mounted integrated circuits |
02/01/2012 | EP2412026A1 Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length |
02/01/2012 | EP2412025A1 Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone |
02/01/2012 | EP2412019A1 Method for producing electrical interconnections made of carbon nanotubes |
02/01/2012 | EP2412018A1 Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket |
02/01/2012 | EP2412017A1 Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile |
02/01/2012 | EP2412016A1 Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses |
02/01/2012 | EP2412015A1 Fabrication and structure of asymmetric field-effect transistors using l-shaped spacers |
02/01/2012 | EP2412014A1 Structure and fabrication of field-effect transistor having source/drain extension defined by multiple local concentration maxima |
02/01/2012 | EP2412013A1 Configuration and fabrication of semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopants |
02/01/2012 | EP2412012A1 Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions |
02/01/2012 | EP2412011A1 Chemical vapor deposition method |
02/01/2012 | EP2412010A1 Configuration and fabrication of semiconductor structure having extended-drain field-effect transistor |
02/01/2012 | EP2412009A1 POLISHING METHOD, POLISHING APPARATUS AND GaN WAFER |
02/01/2012 | EP2412008A1 Method for producing solar cells having selective emitter |
02/01/2012 | EP2412007A1 Buffer layer to enhance photo and/or laser sintering |
02/01/2012 | EP2412006A1 Epitaxial methods and structures for forming semiconductor materials |
02/01/2012 | EP2412005A2 Source supplying unit, method for supplying source, and thin film depositing apparatus |
02/01/2012 | EP2412004A2 Methods of forming patterns on substrates |
02/01/2012 | EP2412002A2 Apparatus and method for manufacturing an integrated circuit |
02/01/2012 | EP2411873A1 Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same and pattern forming method |
02/01/2012 | EP2411568A1 Device and method to conduct an electrochemical reaction on a surface of a semiconductor substrate |
02/01/2012 | EP2411558A2 METHOD FOR APPLYING A Zn(S, O) BUFFER LAYER TO A SEMICONDUCTOR SUBSTRATE BY CHEMICAL BATH DEPOSITION |
02/01/2012 | EP2411499A2 Compositions and methods for removing organic substances |
02/01/2012 | EP2411194A1 A method of generating a hole or recess or well in a substrate, a device for carrying out the method, and a high frequency high voltage source for use in such a device |
02/01/2012 | EP2411191A1 Bernoulli gripper apparatus having at least one bernoulli gripper |
02/01/2012 | EP2411181A1 Abrasive tool for use as a chemical mechanical planarization pad conditioner |
02/01/2012 | EP2106331B1 Method for dividing of monocrystalline layers, disks or wafers |
02/01/2012 | EP2074641B1 Mim capacitor and method of manufacturing a mim capacitor |
02/01/2012 | EP2041780B1 Semiconductor devices and methods of manufacture thereof |
02/01/2012 | EP1920467B1 Fin-type field effect transistor |
02/01/2012 | EP1532687B1 Field effect transistor |
02/01/2012 | EP1425832B1 Method of manufacturing optical devices and related improvements |
02/01/2012 | EP1415330B1 Selective base etching |
02/01/2012 | EP1334519B1 Ball limiting metallurgy for input/outputs and methods of fabrication |
02/01/2012 | EP1130634B1 Semiconductor device and method for forming silicon oxide film |
02/01/2012 | EP1127374B1 A semiconductor topography employing a nitrogenated shallow trench isolation structure |
02/01/2012 | CN202135410U 清除柔性线路板上异物的装置 Clear flexible circuit board means foreign matter |
02/01/2012 | CN202134521U 一种厚膜混合集成电路表面包封工艺用的夹具 A thick film hybrid integrated circuit surface of the encapsulating process jig |
02/01/2012 | CN202134520U 一种光伏电池串自动排版机的吸盘系统 A photovoltaic cell strings sucker system automatic typesetting machine |
02/01/2012 | CN202134519U 工序基座以及包括其的成膜装置 Step dock and film forming apparatus including the same |
02/01/2012 | CN202134518U 晶圆检测系统 Wafer Inspection System |
02/01/2012 | CN202134517U Electronic testing apparatus |
02/01/2012 | CN202134516U 一种芯片粘片机及其抓取头装置 A chip Bonder and crawled head unit |
02/01/2012 | CN202134515U 半导体器件清扫刷 The semiconductor device cleaning brush |
02/01/2012 | CN202134514U 一种单晶硅片的超声波清洗装置 One kind of silicon chip ultrasonic cleaning device |
02/01/2012 | CN202133293U 带自动拉温区功能的温度串级系统 Temperature cascade system with automatic pull-zone function |
02/01/2012 | CN202129878U 金属复合线以及金属线材 Metal composite wire and metal wire |
02/01/2012 | CN1974636B 化学机械研磨浆料、化学机械研磨法及半导体装置的制法 The chemical mechanical polishing slurry was prepared by the chemical mechanical polishing method and semiconductor device |
02/01/2012 | CN1964090B 氮化物基半导体器件及其制造方法 The nitride-based semiconductor device and its manufacturing method |
02/01/2012 | CN1955840B 光掩膜基板的制造方法 The method of manufacturing a photomask substrate |
02/01/2012 | CN1819149B 高压传感器装置及其方法 High pressure sensor device and method |
02/01/2012 | CN1812681B 限界等离子体和增强流动导通性的方法和装置 Bound plasma flow continuity and enhancement method and apparatus |
02/01/2012 | CN1734320B 显示装置及其制作方法 Display device and manufacturing method thereof |
02/01/2012 | CN102342023A 半导体集成电路 The semiconductor integrated circuit |
02/01/2012 | CN102341926A Light-emitting module, method of producing light-emitting module, and lighting unit |
02/01/2012 | CN102341924A Method of bonding a semiconductor device using a compliant bonding structure |
02/01/2012 | CN102341922A Nitride semiconductor element and method for manufacturing same |
02/01/2012 | CN102341921A Rear contact solar cells, and method for the production thereof |
02/01/2012 | CN102341917A Improved metal adhesion |
02/01/2012 | CN102341909A Electrostatic discharge protection device |
02/01/2012 | CN102341906A Reduction of threshold voltage variation in transistors comprising a channel semiconductor alloy by reducing deposition non-uniformities |
02/01/2012 | CN102341905A Semiconductor integrated circuit device and method for designing same |
02/01/2012 | CN102341904A Antifuse device |
02/01/2012 | CN102341903A Redundant metal barrier structure for interconnect applications |