Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
11/2002
11/14/2002US20020167766 Magnetoresistive element and device utilizing magnetoresistance effect
11/14/2002US20020167059 Magnetoresistive element, memory element using the magnetoresistive element, and recording/reproduction method for the memory element
11/14/2002US20020167033 Magnetic memory and method of operation thereof
11/13/2002EP1256958A2 Multibit magnetic memory and method of operation thereof
11/13/2002CN1379485A Cladding read out conducting wire for dynamic pinning soft reference layer
11/12/2002US6480412 Magnetization control method, information storage method, magnetic functional device, and information storage device
11/12/2002US6480411 Magnetoresistance effect type memory, and method and device for reproducing information from the memory
11/12/2002US6480087 Laminated inductor array
11/12/2002US6479353 Reference layer structure in a magnetic storage cell
11/12/2002US6479176 Gradient interface magnetic composites and methods therefor
11/07/2002WO2002088765A1 Magnetoresistive element and magnetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using the same
11/07/2002WO2001099099A3 Magnetic multilayer structure with improved magnetic field range
11/07/2002US20020164828 Sputtering a first ferromagnetic layer, growing a conductive layer on the ferromagnetic layer, oxidizing conductive lyaer to form a tunnel barrier layer of oxide on conductive layer, growing a second ferromagnetic layer on the oxide
11/07/2002US20020164506 Magnetic thin film media with a pre-seed layer of CrTi
11/07/2002US20020163766 Current-perpendicular-to-the-plane structure magnetoresistive element and method of making same
11/07/2002US20020163764 Tunneling magnetoresistive device and method for manufacturing the same
11/07/2002US20020163758 Thin film magnetic head and method of manufacturing the same
11/07/2002US20020162988 Can be used to enhance the capability and performance of microwave, millimeter wave, and submillimeter wave antennas, delay lines, nonlinear and nonreciprocal elements, integrated microwave circuitry
11/05/2002US6477077 Non-volatile memory device
11/05/2002US6476409 Nano-structures, process for preparing nano-structures and devices
10/2002
10/31/2002US20020160229 High-frequency characteristics, corrosion resistance
10/31/2002US20020159206 Magnetoresistive device and method of manufacturing same, thin-film magnetic head and method of manufacturing same, head gimbal assembly and hard disk drive
10/31/2002US20020159203 Magnetoresistance effect element
10/31/2002US20020158534 Method of manufacturing rare earth thick film magnet, motor and actuator comprising rare earth thick film magnet manufactured by the manufacturing method, and method of manufacturing same
10/24/2002WO2002084680A1 Method for defining reference magnetizations in layer systems
10/24/2002WO2002084647A2 Antiferromagnetic layer system and methods for magnetically storing data in antiferromagnetic layer systems of the like
10/24/2002WO2002069359A3 Magnetoelectronics element having a switching energy barrier
10/24/2002US20020155627 Method of fabricating magnetic random access memory operating based on tunnel magnetroresistance effect
10/24/2002US20020155321 Electrodeposition, plating
10/24/2002US20020154537 Memory cell configuration and method for operating the configuration
10/24/2002US20020154457 Top spin valve heads for ultra-high recording density
10/24/2002US20020154456 Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems
10/24/2002US20020154455 Magnetic device with a coupling layer and method of manufacturing and operation of such device
10/24/2002US20020154444 Disk storage system, thin film magnetic head therefor and fabricating method thereof
10/24/2002US20020154443 Soft magnetic film having high saturation magnetic flux density, thin film magnetic head using the same, and methods of producing the soft magnetic film and the thin film magnetic head
10/24/2002US20020153258 Providing integrated circuit device substrate; forming a first patterned photoresist layer over substrate; forming a magnetic material layer or an electrically conductive material layer in pattern; insulating and planarizing photoresist layer
10/24/2002DE10215506A1 Specifying reference magnetizations in layer systems e.g. in magnetoresistive sensor elements, involves applying hard and/or soft magnetic layer to antiferromagnetic layer(s) before, during or after single- or multi-stage heating
10/24/2002DE10215505A1 Antiferromagnetic layer system used for magnetic storage consists of a ferromagnetic layer and an antiferromagnetic layer
10/23/2002EP1251570A2 Method of fabricating magnetic random access memory based on tunnel magnetroresistance effect
10/23/2002EP1250470A1 Nano-material
10/22/2002US6469926 Magnetic element with an improved magnetoresistance ratio and fabricating method thereof
10/22/2002US6469878 Data head and method using a single antiferromagnetic material to pin multiple magnetic layers with differing orientation
10/17/2002US20020150791 Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus
10/17/2002US20020150790 Soft magnetic film of FeCoMO having a high saturation flux density, a moderate soft magnetism and a uniaxial magnetic anisotropy
10/17/2002US20020149887 Magnetoresistive effective type element, thin film magnetic head, magnetic head device and magnetic disk driving device which use said magnetoresistive effective type element
10/15/2002US6466418 Bottom spin valves with continuous spacer exchange (or hard) bias
10/10/2002WO2002065489A3 Magnetically sensitive layer array
10/10/2002US20020146851 Method of forming magnetic memory
10/10/2002US20020146580 Magnetic devices using nanocomposite materials
10/10/2002US20020145902 Magnetic memory device and magnetic substrate
10/09/2002EP1248305A2 Method of forming magnetic memory
10/09/2002EP1248273A2 Cladded read conductor for a tunnel junction memory cell
10/08/2002US6462641 Magnetoresistor with tunnel effect and magnetic sensor using same
10/03/2002WO2002078100A1 A transpinnor-based switch and applications
10/03/2002WO2002078057A2 A transpinnor-based sample-and-hold circuit and applications
10/03/2002WO2002078021A1 Magnetoresistive spin-valve sensor and read head
10/03/2002WO2002077657A1 Magnetoresistive spin-valve sensor and magnetic storage apparatus
10/03/2002US20020142490 Magnetic sensor and method of producing the same
10/03/2002US20020142192 Method of patterning magnetic products using chemical reactions
10/03/2002US20020142163 Aligned fine particles, method for producing the same and device using the same
10/03/2002US20020141119 Thin-film magnetic head having ensured insulation between shield and magnetic detecting element
10/03/2002US20020138970 Method of accurate evaluation on magnetoresistive read element
10/02/2002EP1246168A2 Tunnel magneto-resistive head and manufacturing method thereof
10/02/2002EP1245029A1 Spin dependent tunneling memory
10/02/2002EP1145204B1 Security device comprising soft magnetic thin film
10/02/2002CN1372688A Magnetic device with a coupling layer and method of manufacturing and operation of such device
10/02/2002CN1372687A Memory cell arrangement and operational method therefor
10/02/2002CN1091934C Method for preparing high-sensitivity giant magnetic resistor material
09/2002
09/26/2002US20020136930 Magnetic recording layer and a soft magnetic layer and adapted for a high-density magnetic recording
09/26/2002US20020136929 Magnetic recording medium and method for manufacturing same
09/26/2002US20020135955 Giant magneto-resistive effect element, magneto-resistive effect type head, thin-film magnetic memory and thin-film magnetic sensor
09/26/2002US20020135950 Tunnel magneto-resistive head and manufacturing method thereof
09/26/2002US20020135948 Magnetoresistive effect element, its Manufacturing method, magnetic head, magnetic reproducing apparatus, and magnetic memory
09/26/2002US20020135443 Method and apparatus for multiplying a frequency of an electromagnetic wave
09/25/2002WO2003078701A1 Mbe-method for the production of a gallium manganese nitride ferromagnetic film
09/25/2002EP1244118A2 Magnetoresistive element and MRAM using the same
09/25/2002EP1244117A2 Magnetoresistive element, memory element using the magnetorestistive element, and recording/reproduction method for the memory element
09/24/2002US6456523 Ferromagnetic double quantum well tunnel magneto-resistance device
09/24/2002US6456468 Magnetoresistance effect element, and magnetoresistance effect sensor and magnetic information recording and playback system using same
09/24/2002US6455178 Exchange coupling film and magnetoresistive element
09/19/2002WO2002073250A2 Magnetic thin film interference device or pigment and method of making it, printing ink or coating composition, security document and use of such a magnetic thin film interference device
09/19/2002WO2002073226A2 Tunnel junction and charge perpendicular-to-plane magnetic recording sensors and method of manufacture
09/19/2002US20020132140 Magnetic recording medium
09/19/2002US20020131219 Data head and method using a single antiferromagnetic material to pin multiple magnetic layers with differing orientation
09/19/2002US20020131215 Tunnel junction and charge perpendicular-to-plane magnetic recording sensors and method of manufacture
09/19/2002US20020131214 Wide bandwidth magnetoresistive sensor and method of making the same
09/19/2002US20020131205 Soft magnetic film having high corrosion resistance, magnetic head including the same, and method for making the soft magnetic film
09/19/2002US20020130339 Magnetoresistance effect device, method of manufacturing the same, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic information reproducing apparatus
09/19/2002US20020129875 Magnetic thin film, magnetic thin film forming method, and recording head
09/19/2002DE10111460A1 Magnetic HF device with magnetically soft layer system e.g. for telecommunications systems, has adjustment of permeability of layer system by at least one other layer
09/17/2002US6452892 Magnetic tunnel device, method of manufacture thereof, and magnetic head
09/17/2002US6452764 Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices
09/17/2002US6452386 Magnetoresistance effect element, and magnetoresistance effect sensor and magnetic information recording and playback system using same
09/17/2002US6452240 Spin valves; magnetic tunnel junctions used in high speed magnetic random access memory; free magnetic region comprising an alloy of at least one transition metal and two metals chosen from nickel, cobalt and iron
09/17/2002US6452204 Tunneling magnetoresistance transducer and method for manufacturing the same
09/17/2002US6451215 Method of producing magneto-resistive tunnel junction head
09/12/2002US20020127435 Recording quality, efficiency, reduced noise
09/12/2002DE10202103A1 Magneto-resistive element comprises an intermediate layer arranged between a pair of magnetic layers
09/11/2002EP1239307A1 Magnetic thin film interference device
09/11/2002CN1368735A 磁存储装置与磁基片 A magnetic storage device and the magnetic substrate
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