Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
01/2004
01/15/2004WO2003061755A3 Nanomagnetically shielded substrate
01/15/2004US20040009614 Micromachined apparatus for collection, separation and analysis of polynucleotides, proteins, peptides, receptors, chelators and/or antibodies; high throughput assays; microfluidics
01/15/2004US20040009375 Perpendicular magnetic recording media, manufacturing process of the same, and magnetic storage apparatus using the same
01/15/2004US20040008537 Magnetic memory device and method
01/15/2004US20040008453 Magnetic layer system and a component comprising such a layer system
01/14/2004CN1468451A Tmr material having ultra-thin magnetic layer
01/14/2004CN1467708A Perpendicular magnetic recording media, manufacturing process of the same, and magnetic storage apparatus using the same
01/14/2004CN1467704A Magnetoresistance effect film and spin valve reproducing head
01/13/2004US6678128 Exchange coupling film and electroresistive sensor using the same
01/13/2004US6678126 Magnetoresistance-effect magnetic head
01/08/2004WO2004003945A1 Increased packing density in self-organized magnetic array
01/08/2004US20040005779 Spin electronic material and fabrication method thereof
01/08/2004US20040005483 Perovskite manganites for use in coatings
01/08/2004US20040005458 Magnetic recording medium and method of producing the same
01/08/2004US20040004791 Method and apparatus for providing precise control of magnetic coupling field in NiMn top spin valve heads and amplitude enhancement
01/08/2004US20040004261 Magneto-resistive devices
01/07/2004EP1378893A1 Perpendicular magnetic recording media
01/07/2004EP1377993A1 Method for defining reference magnetizations in layer systems
01/07/2004EP1377979A2 Antiferromagnetic layer system and methods for magnetically storing data in antiferromagnetic layer systems of the like
01/07/2004CN1133979C Magnetizable device
01/06/2004US6674664 Circuit selected joint magnetoresistive junction tunneling-giant magnetoresistive effects memory cells
01/06/2004US6674142 Semiconductor memory device utilizing tunnel magneto resistive effects and method for manufacturing the same
01/06/2004US6673999 Magnetically shielded assembly
01/06/2004US6673475 For use in computers
01/02/2004EP1377150A1 Magnetic substance with maximum complex permeability in quasi-microwave band and method for production of the same
01/01/2004US20040001372 Magnetoresistive effect element and magnetic memory device
01/01/2004US20040001367 Increased packing density in self-organized magnetic tray
12/2003
12/31/2003WO2004001872A1 Magnetoresistive device and magnetic memory device
12/31/2003WO2004001779A1 Method of producing nife alloy films having magnetic anisotropy and magnetic storage media including such films
12/30/2003US6671141 Tunnel magnetoresistive effective element, a thin film magnetic head, a magnetic head device and a magnetic disk drive device
12/30/2003US6671136 Magnetic head and magnetic disk apparatus
12/30/2003US6670660 Semiconductor memory device utilizing tunnel magneto resistive effects and method for manufacturing the same
12/30/2003US6669787 Oxidizing ferromagnetic material of sense layer, depositing aluminium on oxidized ferromagnetic material of sense layer, whereafter this aluminium oxidizes to an aluminium oxide film using oxygen from oxidized ferromagnetic material
12/25/2003US20030235716 Method of producing NiFe alloy films having magnetic anisotropy and magnetic storage media including such films
12/25/2003US20030235016 Stabilization structures for CPP sensor
12/24/2003WO2003107424A1 Magnetoresistive random-access memory device
12/24/2003WO2003107350A2 Magnetoresistive random access memory with reduced switching field
12/24/2003CN1463010A Magnetoresistive effect component and magnetic memory with such component
12/23/2003US6667616 Spin valve sensor having increased GMR ratio and decreased sensitivity to crosstalk noise
12/23/2003US6667493 Thin-film magnetic element capable of effectively orienting magnetization direction of magnetic layer and manufacturing method thereof
12/18/2003WO2003105163A1 MAGNETIC READ USING (FePt)100-XCuX AS PERMANENT MAGNET MATERIAL
12/18/2003WO2003105129A1 Method and structure to reduce e-beam and magnetic material interactions
12/18/2003WO2003104830A1 Thin film device with perpendicular exchange bias
12/18/2003WO2003083910B1 Reduction of noise, and optimization of magnetic field sensitivity and electrical properties in magnetic tunnel junction devices
12/18/2003US20030231436 GMR magnetic sensing element having an antiferromagnetic layer extending beyond the track width and method for making the same
12/18/2003US20030230362 Insulation film, powder for magnetic core and powder magnetic core and processes for producing the same
12/17/2003EP1371100A1 A transpinnor-based switch and applications
12/17/2003EP1371072A1 Magnetoresistive spin-valve sensor and read head
12/17/2003EP1370884A2 A transpinnor-based sample-and-hold circuit and applications
12/16/2003US6665154 Spin valve head with a current channeling layer
12/16/2003US6664785 Assembly for measuring a magnetic field, using a bridge circuit of spin tunnel elements and a production method for the same
12/16/2003US6663987 Includes insulating layer between electrode layers on a multilayer film in contact with the sides of the insulating layer, so electrodes can be kept thick even at front end faces and sensing current can flow at constant level
12/16/2003US6663986 Tantalum and chromium layers; magnetic read head a
12/11/2003WO2003043017A3 Magnetic device with magnetic tunnel junction, memory array and read/write methods using same
12/11/2003US20030228710 Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabrication
12/11/2003US20030228542 Method and structure to reduce e-beam and magnetic material interactions
12/11/2003US20030228491 Multilayer; substrate, buffer and ferromagnetic and antiferromagnetic layers
12/11/2003US20030228490 Sputtering; controlling ratios of power and pressure
12/11/2003US20030228488 Magnetic read head using (FePt)100-xCux as a permanent magnet material
12/11/2003US20030227799 Tunnel magnetoresistive effect element, method of manufacturing tunnel magnetoresistive effect element and magnetic memory device
12/11/2003US20030227724 Synthetic free layer for CPP GMR
12/11/2003US20030227723 CPP GMR device with inverse GMR material
12/10/2003EP1369882A1 Magnetoresistance effect film and spin valve reproducing head
12/10/2003CN2591723Y Nail punching thin film with laminated ferro magnetic layer
12/10/2003CN1130693C Magneto-resistive effect element and storage element
12/09/2003US6661703 Magneto-resistance effect film and memory using it
12/09/2003US6661627 Magnetic recording device, method of adjusting magnetic head, and magnetic recording medium
12/09/2003US6661622 Method to achieve low and stable ferromagnetic coupling field
12/09/2003US6661606 Magnetic disk apparatus with magnetic head having upper and lower magnetic cores of an electroplated thin film
12/09/2003US6660375 Gas phase reaction of tetracyanoetheylene or 7,7,8,8-tetra-cyanoquinodimethane with such as vanadium hexacarbonyl or bis(benzene)vanalium; air stable; applicable to wide variety of rigid or flexible substrates
12/04/2003WO2003100877A1 Magnetoresistance effect device and magnetism sensor using the same
12/04/2003US20030224209 Magnetoresistance effect film and spin valve reproducing head
12/04/2003US20030224103 Magnetoresistance effect film and method of forming same
12/04/2003US20030221749 Coercivity not less than about 1000 Oersted are prepared in a single step procedure. A molten mixture of a desired composition having a relatively high boron content is cooled at a rate slower than about 105 degrees Celsius per second.
12/03/2003EP1366380A2 Magnetic thin film interference device or pigment and method of making it, printing ink or coating composition, security document and use of such a magnetic thin film interference device
12/03/2003CN1460272A Magnetic multilayer structure with improved magnetic field range
12/02/2003US6657830 Magnetoresistive magnetic sensor with tunnel effect and magnetic storage apparatus
12/02/2003US6657829 Tunneling magnetoresistive device
12/02/2003US6657826 Magnetoresistive device and method of manufacturing same, thin-film magnetic head and method of manufacturing same, head gimbal assembly and hard disk drive
12/02/2003US6657823 Differential detection read sensor, thin film head for perpendicular magnetic recording and perpendicular magnetic recording apparatus
12/02/2003US6657246 MRAM with an effective noise countermeasure
12/02/2003US6656604 Magnetoresistive thin-film magnetic element and method for making the same
11/2003
11/27/2003US20030219906 Formation of combinatorial arrays of materials using solution-based methodologies
11/27/2003US20030219629 Flexible support, a first recording layer, an intermediate layer and a second recording layer in this order, wherein the second recording layer comprises a ferromagnetic metal alloy comprising Co, Pt and Cr, and a nonmagnetic oxide.
11/27/2003US20030219261 Magnetic garnet material, faraday rotator, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible for producing the same
11/26/2003EP1365390A2 Magnetic recording medium
11/26/2003CN1459034A Magnetic thin film interference device or pigment and method of making it, printing ink or coating composition containing said magnetic thin fim interference device
11/25/2003US6654279 Magnetic thin film element, memory element using the same, and method for recording and reproducing using the memory element
11/25/2003US6654212 Magnetic sensor capable of providing stable resistance change rate
11/25/2003US6654210 Solid-state inductor and method for same
11/20/2003WO2003096423A1 Semiconductor storage device and production method therefor
11/20/2003WO2003096359A1 Soft magnetic material of high saturation magnetic flux density
11/20/2003WO2003025942A3 Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same
11/20/2003US20030214862 Magnetic random access memory
11/20/2003US20030214004 Spin valve transistor, magnetic reproducing head and magnetic information storage system
11/19/2003EP1363295A1 Magnetic material and method for preparation thereof
11/19/2003CN1128455C Magnet powder, sintered magnet, bonded magnet, and magnetic recording medium
11/18/2003US6650513 Magnetic devices with a ferromagnetic layer having perpendicular magnetic anisotropy and an antiferromagnetic layer for perpendicularly exchange biasing the ferromagnetic layer
11/18/2003US6650512 GMR coefficient enhancement of a spin valve structure
11/18/2003US6649413 Synthesis and screening combinatorial arrays of zeolites
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