Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
03/2000
03/30/2000CA2284160A1 Thin-film structure of a magnetic field sensor with a magnetoresistive multilayer system having electron scattering spin dependency
03/28/2000US6042899 Method of manufacturing a thin-film magnetic device
03/23/2000DE19843349A1 Magneto-resistive sensor element for measurement of external magnetic field angle, especially in bridge circuits, has outer sensor layer comprised partially or completely of individual segments
03/16/2000WO2000014768A1 Electromagnetic field generator and method of operation
03/16/2000WO2000014748A1 Magnetoresistive element and use of same as storage element in a storage system
03/16/2000WO2000014732A2 Electric field for magnetic reversal of a thin film
03/14/2000US6036825 Sputtering targets containing oxides from groups 4,5,6 and 7 in controlled ratios
03/09/2000WO2000013194A1 Magnetoresistive material with two metallic magnetic phases
03/09/2000CA2341857A1 Magnetoresistive material with two metallic magnetic phases
03/08/2000EP0984075A1 Film deposition apparatus or artificial lattice multi-layered film
03/07/2000US6034887 Non-volatile magnetic memory cell and devices
03/07/2000US6033536 Magnetron sputtering method and sputtering target
03/07/2000US6033491 Fabrication process of Ni-Mn spin valve sensor
03/07/2000US6033470 Method of producing a cerium-containing magnetic garnet single crystal
03/01/2000CN1245952A Low magnetic moment/high coercivity fixed layer for magnetic tunnel junction sensor
02/2000
02/29/2000US6031692 Magnetoresistive device and magnetoresistive head
02/29/2000US6031654 Suitable for a faraday rotator used for an optical isolator; contains mixed oxides of terbium, bismuth, iron, gallium and aluminum
02/29/2000US6031273 All-metal, giant magnetoresistive, solid-state component
02/29/2000US6030449 Garnet single crystal for substrate of magneto-optic element and method of manufacturing thereof
02/24/2000WO2000010178A1 Magnetoresistive element and the use thereof as storage element in a storage cell array
02/24/2000WO2000010024A1 Device comprising a first and a second ferromagnetic layer separated by a non-magnetic spacer layer
02/24/2000WO2000010023A1 Magnetic field sensor comprising a spin tunneling junction element
02/24/2000WO2000010022A1 Magnetic field sensor with perpendicular to layer sensitivity, comprising a giant magnetoresistance material or a spin tunnel junction
02/22/2000US6028750 Thin film magnetic head substrate with improved heat radiation
02/22/2000US6028730 Method and apparatus for initializing a magnetoresistive head
02/15/2000CA2084631C Copolymers with magnetic properties
02/10/2000DE19936378A1 Spin valve magnetoresistive thin film element, for a magnetic head, e.g. for reading hard disks, has a free magnetic layer of specified thickness comprising a nickel-iron alloy film and optionally a cobalt or cobalt alloy film
02/09/2000CN1244017A Non-volatile magnetic memory unit and component
02/08/2000US6023397 Iron alloy; soft magnetic thin film
02/08/2000US6022633 Magnetoresistive effect element and magnetoresistive effect sensor
02/08/2000US6022630 Platinum and cobalt multilayer recording materials system and process for making same
02/08/2000CA2040741C Fe based soft magnetic alloy, magnetic materials containing same, and magnetic apparatus using the magnetic materials
02/03/2000WO2000005712A1 Reducing sensor temperature in magnetoresistive recording heads
02/03/2000WO2000005693A2 Security device comprising soft magnetic thin film
02/03/2000WO1999056074A3 Element comprising a layer structure and a current-directing means
02/03/2000DE19841034C1 Magnetisation direction alteration method for thin film used for information recording
02/01/2000US6021065 Spin dependent tunneling memory
01/2000
01/27/2000WO2000004592A1 Fabricating an mtj with low areal resistance
01/27/2000WO2000004591A1 Low resistance magnetic tunneling junction
01/27/2000DE19934010A1 Drehventil-Magnetowiderstands-Dünnschichtelement und Verfahren zu seiner Herstellung Rotary valve magneto-resistive thin-film element and process for its preparation
01/27/2000DE19934009A1 Magnetoresistive thin layer element of the spin valve type for use in giant magnetoresistive (GMR) elements forming part of a read head for use with computer hard drives
01/26/2000EP0885398B1 Magnetic field-sensitive sensor with a thin-film structure and use of the sensor
01/18/2000USRE36517 Thin film magnet, cylindrical ferromagnetic thin film and production method thereof
01/18/2000US6016241 Magnetoresistive sensor utilizing a granular magnetoresistive layer
01/18/2000US6016088 Magnetostatic wave device
01/13/2000WO1999062068A3 Magnetic memory
01/12/2000EP0971424A2 Spin-valve structure and method for making spin-valve structures
01/12/2000EP0971423A1 Spin-valve structure and method for making same
01/12/2000CN1240840A Magnetic film and its making method
01/11/2000US6013365 Multi-layer structure and sensor and manufacturing process
01/11/2000US6013161 Thin film magnetic alloy having low noise, high coercivity and high squareness
01/05/2000EP0868718B1 Ceramic wafers and thin film magnetic heads
01/04/2000US6011674 Magnetoresistance effect multilayer film with ferromagnetic film sublayers of different ferromagnetic material compositions
01/04/2000US6010781 Magnetoresistance effect element, magnetoresistance effect type head and magnetic recording/reproducing apparatus
12/1999
12/29/1999WO1999067828A1 Magnetic tunnel device, method of manufacture thereof, and magnetic head
12/29/1999WO1999067099A1 Transferable magnetic film and its use
12/23/1999DE19826199A1 Memory chip developed to have a definite structure
12/21/1999US6005798 Magnetoresistance effect device, and magnetoresistance effect type head, memory device, and amplifying device using the same
12/21/1999US6004654 Magnetic multilayer film, magnetoresistance element, and method for preparing magnetoresistance element
12/21/1999US6004617 Combinatorial synthesis of novel materials
12/14/1999US6002553 Giant magnetoresistive sensor
12/14/1999US6001447 Longitudinal magnetic recording media and magnetic storage apparatus using the same
12/14/1999US6001430 Magnetoresistance effect film and production process thereof
12/14/1999US6001248 Used for separation of transition metals, both light and heavy, from other metals and from each other.
12/08/1999EP0962547A1 Improved ion beam sputtering
12/08/1999CN1238059A Magnetizable device
12/07/1999US5998048 Article comprising anisotropic Co-Fe-Cr-N soft magnetic thin films
12/07/1999US5998040 Multilayer which shows magnetoresistive effect and magnetoresistive element using the same
12/07/1999US5997698 Applied to various magnetic heads including an induction type magnetic head, a magnetoresistance type magnetic head(mr head), and an mr induction type composite head having an induction head portion and an mr head portion.
12/02/1999WO1999062068A2 Magnetic memory
12/02/1999DE19922784A1 Magnetic garnet single crystal film especially for a magnetostatic wave device e.g. a limiter or noise filter in microwave equipment
12/02/1999DE19825391A1 Magnetischer Speicher Magnetic memory
12/01/1999EP0731969B1 Magnetic multilayer device including a resonant-tunneling double-barrier structure
12/01/1999CN1236959A Soft magnetic film, soft magnetic multilayer film, method of manufacturing the same and magnetic device using film
11/1999
11/30/1999US5995336 Composite structure with single domain magnetic element, and thin film magnetic head incorporating same
11/30/1999US5993566 Magnetic transducers for reading information signals from a magnetic medium and, in particular, to an improved process for fabrication of a spin valve magnetoresistive read sensor.
11/30/1999CA2071860C Magnetic property modification
11/24/1999EP0925585A4 Giant magnetoresistive effect memory cell
11/24/1999EP0896734A4 All-metal, giant magnetoresistive, solid-state component
11/23/1999US5989691 Magnetic element
11/23/1999US5989690 Magnetoresistance effect film, a method of manufacturing the same, and magnetoresistance effect device
11/17/1999CN1235338A Magnetoresistance effect device, magnetoresistance head method for producing magnetoresistance effect device
11/16/1999US5986858 Ferromagnetic tunnel-junction magnetic sensor utilizing a barrier layer having a metal layer carrying an oxide film
11/16/1999US5985472 Magnetostatic wave device
11/16/1999US5985356 Screening
11/10/1999EP0954754A1 Magnetic field sensor and method for making same
11/09/1999US5981095 A fuel cell having a magnetically modified electrode with a surface coating of a magnetic composite material consisting of ion exchange resin, magnetic particles and catalyst, supplying the fuel to the electrode which reforms the fuel
11/04/1999WO1999056074A2 Element comprising a layer structure and a current-directing means
11/02/1999US5976715 Articles comprising magnetically soft thin films
11/02/1999US5976713 Exchange-coupling film and, magneto-resistance effect element and magnetic head using thereof
11/02/1999US5976326 Method of sputtering selected oxides and nitrides for forming magnetic media
10/1999
10/27/1999EP0733263B1 A magneto-resistive element comprising amorphous permalloy films and method of preparing the same
10/26/1999US5973334 Magnetic device and magnetic sensor using the same
10/19/1999US5968676 Magnetoresistance effect film and magnetoresistance effect type head
10/13/1999EP0809866A4 Magnetoresistive structure with alloy layer
10/12/1999US5966322 Giant magnetoresistive effect memory cell
10/12/1999US5966275 GMR magnetic sensor having an improved sensitivity of magnetic detection
10/12/1999US5966012 Magnetic tunnel junction device with improved fixed and free ferromagnetic layers
10/12/1999US5965283 GMR enhancement in inhomogeneous semiconductors for use in magnetoresistance sensors
10/06/1999CN1230744A Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film
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